Abstract: Apparatus for crucible-free zone melting an end-supported semiconductor rod, including an RF generator having a resonant circuit for determining the generator frequency, the resonant circuit having connected therein a tank-circuit coil and a tank-circuit capacitor, and an induction heating coil fed by the RF generator and annularly surrounding the semiconductor rod, the tank-circuit coil being formed as a primary winding to the induction heating coil acting as a secondary winding, both the tank circuit coil and the induction heating coil forming a structural unit having a fixed magnetic coupling.

Abstract: Boric acid is crystallized from saturated aqueous solutions thereof by adding to the solutions small proportions of water soluble polymers which control the particle size distribution of the boric acid during crystallization.

Abstract: A significant problem in making monocrystalline ternary semiconductor compound material, for example cadmium mercury telluride, is to produce useful quantities of the material which have electrical properties within a narrow band of values, and this depends on the material having a composition within a narrow range. Monocrystalline cadmium mercury telluride may be made by preparing a melt of the material, quenching this melt so as to produce a polycrystalline ingot 16, sealing the ingot 16 in an ampoule 13, and then forming a molten zone 20 at one end of the ingot 16 and passing this molten zone through the ingot 16 so as to form monocrystalline cadmium mercury telluride 21. The length of the molten zone 20 is from 25 to 40% of the length of the ingot 16.

Abstract: A large single crystal of metal orthophosphate is grown from a plurality of seed crystals by first mounting the seed crystals with one planar surface of each seed crystal substantially in contact with a planar surface of an adjoining seed crystal and a second planar surface substantially parallel to a second planar surface of the adjoining seed crystal. By known methods, the seeds are then grown into a large single crystal in an acid medium at elevated temperatures. The process is particularly useful for growing large crystals of berlinite, which can then be cut into wafers useful in surface acoustic wave devices.

Abstract: A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.

Abstract: Disclosed herein is a process for forming a singlecrystalline silicon layer by heating a wafer having a starting silicon layer of amorphous or polycrystalline silicon on the singlecrystalline silicon substrate, in accordance with the epitaxial growth technique. The process comprises providing a heat source comprising a plurality of tubular lamps provided in a parallel second plane above a first plane in which the wafer is placed; lighting the tubular lamps to radiate their light to the wafer so as to hold the starting silicon layer at 1100.degree.-1400.degree. C. for 4 seconds or longer; and then, radiating light from a specific lamp to a portion of the starting silicon layer of the wafer where the temperature of the portion of the starting silicon layer is raised to 1410.degree.-1480.degree. C. and to form a narrow molten region and forming the same narrow molten regions successively one after another in the wafer.

Abstract: Disclosed herein is a process for forming a single crystal silicon layer by heating a wafer, which is made of a single crystal silicon substrate and a starting silicon layer made of amorphous or polycrystalline silicon and provided on the silicon substrate, in accordance with the epitaxial growth technique.

Abstract: To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (<1 .mu.m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns.

Abstract: This invention concerns itself with a method for producing single crystal, seed material for use in growing synthetic quartz crystals. This seed material comprises a Z-faced seed crystal cut or sliced from the X-plus growing region of a synthetic quartz, single crystal boule.

Abstract: A vapor source-holding container has an opening smaller than the evaporating area of the material held in the container and a wall portion in contact with the material and having an emissivity lower than the external surface of the wall portion not in contact with the material.

Abstract: High-purity silicon bars can be produced by electrically melting a portion of a mass of silicon granules in a crystal so that the mass around the melt isolates the melt from the crucible wall and thereby prevents contamination of the melt from the crucible and softening of the crucible wall by the melting heat. The current flow is promoted by the heating of the silicon granules and/or electrodes and a seed can be lowered into the melt so that a bar can be withdrawn therefrom for cutting up into wafers for use in the production of semiconductors.

Abstract: Dried yeast products, when used as a carrier for vegetative food flavors or colors, act to retard loss of color or flavor and to prevent gain of unpleasant unnatural color or flavor during storage of dry food ingredient blends.

Abstract: Sodium and potassium chloride consolidated granular salt crystals are formed on a bed of granular salt by spraying, for example, the clarified brine of aluminum black dross upon the heated bed. The bed cascades in a revolving drum and is maintained at a temperature of about 250.degree.-350.degree. F. (121.degree.-177.degree. C.). That is, the bed is maintained at a temperature high enough to evaporate the water from the brine before the brine penetrates the bed and low enough to eliminate entrainment of salt in the evaporated water. An apparatus and process for the recovery of this salt product are claimed.

Abstract: A molecular beam epitaxy system including a growth chamber and an analysis chamber, both connected to ultrahigh vacuum pump systems. The analysis chamber includes a source outgassing mount, so that, while growth is proceeding in the growth chamber, a newly received source can be outgassed in the special mount connected to the analysis chamber. Preferably the exhausted cryogenic gases from the cryo shield in the growth chamber are used to cool the source outgassing mount on the analysis chamber, to minimize the contamination of the analysis chamber by contaminants outgassed.

Abstract: Separating Ca(NO.sub.3).sub.2.4H.sub.2 O from a nitrophosphate digestion liquor by crystallization, wherein Ca(NO.sub.3).sub.2.4H.sub.2 O seeding material with a particle size smaller than 100 .mu.m is added to this liquor at a temperature of 0.degree.,1.degree.-2.degree. C. lower than the saturation temperature, the resulting liquor is batchwise cooled, and the Ca(NO.sub.3).sub.2.4H.sub.2 O crystallized out is separated from the cooled liquor.The Ca(NO.sub.3 ).sub.2.4H.sub.2 O is substantially crystallized out without excessive cooling as very coarse and uniform particles which can be easily separated out.

Abstract: Granules of the magnesium salts of percarboxylic acid carboxylates are obtained by spraying onto agitated feed particles of the salt a small amount of a dilute aqueous solution of a synthetic poly hydroxy-substituted compound, particularly polyvinylalcohol and drying the resultant agglomerate. It is especially suitable to carry out the granulation process in a warm air fluidized bed using feed particles of mainly below 200 microns producing eventually a low bulk density product mainly in the range 200-1000 microns.In a modification of the fluidized bed process, the agglomerating agent used can be a aqueous solution of carboxylated polyvinyl alcohol.

Abstract: In the liquid phase epitaxy growth of Group III-V compound semiconductors using boat-slider apparatus, melt-carry-over is essentially eliminated by prebaking the metallic solvent (e.g., In shot) in the boat to form ingots and then etching the ingots in dilute nitric or hydrochloric acid prior to adding solutes (e.g., GaAs, InP, dopants). This process removes contaminants which coalesce on the ingots and cause poor wipe-off.

Abstract: A single crystal manufacturing apparatus has a pulling mechanism and a magnetic field generating unit. The pulling mechanism grows a single crystal by inserting a seed crystal into a melting liquid of a single crystal raw material and pulling the seed crystal from the melting liquid at a predetermined speed. The generating unit has a pair of superconductive magnets for applying a magnetic field to the melting liquid. The magnetic field applied from the magnets suppresses a thermal convection in the vicinity of the surface of the melting liquid and allows the thermal convection in the region of the melting liquid below the surface thereof.

Abstract: Processes for the continuous preparation of single crystals having a predetermined shape and requiring little or no subsequent machining which processes comprise placing a single crystal-forming material in a crucible fitted in its lower portion with a capillary conduit having a length equal to or greater than the retention length of the molten material in the capillary at the selected temperature and pressure, heating the crystal-forming material to a temperature above its melting point, bringing a performed appropriately oriented crystal seed into contact with the pendant drop formed at the lower point of the capillary, and pulling the seed crystal away from the feed material in the crucible so that the amount of crystal-forming material fed per unit of time is at every instant substantially equal to the quantity of material pulled into single crystal form, together with novel apparatus comprising a capillary-containing crucible, heating means, feed means, enclosure, seed-supporting carrier, means for movin

Abstract: Improvements on the graphoepitaxial process for obtaining epitaxial or preferred orientation films are described wherein a cap of material is formed over the film to be oriented, artificial surface-relief structure may be present in the substrate, the cap, or both, and the film may be heated by irradiation with electromagnetic radiation.