Abstract: In the magnetic optical system of a transmission electron microscope (TEM), the increased strength of a second objective lens is used to increase the longitudinal energy dispersion by forming an image at a magnified second back-focal plane. The electric current distribution of other lenses in the microscope is reconfigured to compensate for any offsets introduced by the modified second objective lens. A plurality of deflectors are installed which enable the manipulation of the electron beam electronically between the specimen and the second back-focal plane. The magnified second back-focal plane is projected onto the selected-area aperture, allowing the use of the existing selected-area aperture as an objective aperture to achieve an energy filtering effect which improves the image contrast and resolution.

Abstract: A charger performs corona discharge by applying a voltage to a discharging electrode. The charger includes an electrode plate formed in the shape of a panel on the discharging electrode, a plurality of projecting portions disposed in an end portion of the electrode plate, and a plurality of projection groups formed in each of the projecting portions such that the projection groups are adjacent to each other in a thickness direction of the electrode plate.

Abstract: An ionization device for ionizing a liquid sample may be disposed between a liquid chromatograph and an atmospheric pressure ionization mass spectrometer. A gas inspirator supplies a mixed nebulizing gas, and a nebulizer includes a nozzle for spouting an effluent from the liquid chromatograph so as to supply an ionized particle of the effluent to the atmospheric pressure ionization mass spectrometer. The inspirator has a taper passage therein which is formed to be gradually narrower from one side for taking in the nebulizing gas to the other side for taking out the mixed nebulizing gas. The taper construction is provided with a port for providing the auxiliary gas thereon in order to obtain a constant mixing ratio of the auxiliary gas to the nebulizing gas.

Abstract: In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.

Abstract: An electron linear accelerator for use in industrial material processing, comprises an elongated, resonant, electron accelerator structure defining a linear electron flow path and having an electron injection end and an electron exit end, an electron gun at the injection end for producing and delivering one or more streams of electrons to the electron injection end of the structure during pulses of predetermined length and of predetermined repetition rate, the structure being comprised of a plurality of axially coupled resonant microwave cavities operating in the .pi./2 mode and including a graded-.beta. capture section at the injection end of the structure for receiving and accelerating electrons in the one or more streams of electrons, a .beta.

Abstract: A process to camouflage a device which emits infrared radiation from another device includes forming a wall of particles having a known distribution density between the two devices. The particles emit or absorb infrared radiation from a known surface area. The distribution density, surface area and distances between each device and the wall are such that the wall masks the device to be camouflaged yet does not mask the other device.

Abstract: Focused ion bean (FIB) milling through a power plane of a device to expose or cut a hidden, lower-layer conductor requires accurate positioning relative to the hidden conductor of a box defining boundaries of the FIB operation. This can in general be done by aligning surface information (topology or voltage contrast) visible in a FIB or scanning electron microscope (SEM) image with an overlay image generated from stored data describing the device. The location of the hidden conductor relative to the visible surface information is determined from the stored data. Advanced integrated circuits often do not provide enough unique surface information near the FIB operation area to align the images with sufficient accuracy.

Abstract: A method and apparatus for trapping ions in an ion trap having a ring electrode and a plurality of end-cap electrodes. Ions are introduced into a ion trap cavity of the ion trap from an external source or by desorption of a substance in the ion trap cavity. In a first embodiment, as the ions are introduced in the ion trap cavity, the amplitude of an RF voltage being applied to the ring electrode is gradually increased to trap the ions in the ion trap cavity. In a second embodiment, as the ions are introduced in the ion trap cavity, a retarding voltage is applied to the end-caps to reduce the initial kinetic energy of the ions. In a third embodiment, as the ions are introduced in the ion trap cavity from a probe tip inserted in the cavity, a retarding voltage is applied to the probe tip.

Abstract: An electron microscope is provided which is reduced in total weight and shape. An electron gun cathode and an electron gun lens are enclosed in an electron gun chamber. An electron beam emitted from the electron gun chamber is converged by an objective lens to irradiate a wafer. Each of the electron gun lens and the objective lens is formed as an electrostatic field lens.

Abstract: An optical recording medium is provided with optical guide grooves and prepits representing for example address data, in a land portion sandwiched between the grooves. The reflectivity in the bottom portion of the prepits is made higher than that of the land portion. An antireflection film is provided on the medium such that, in case where the reflectivity of the antireflection film decreases with the increase in the thickness of the antireflection film, the thickness of the antireflection film on the bottom of the prepits is selected smaller than that on the land portion. In the case where reflectivity of the antireflection film increases with the increase in the thickness of the antireflection film, the thickness of the antireflection film on the bottom of the prepits is selected larger than that on the land portion.

Abstract: A scan type electron microscope has an electron beam generating source for generating an electron beam with which a sample is irradiated; a sample chamber, supplied with a gas for effecting a gas amplification, for housing the sample; a secondary electron detecting means, installed in the sample chamber, for detecting secondary electrons gas-amplified by the gas after being generated from the sample with the irradiation of the electron beam; and an electrode, disposed between the sample and the secondary electron detecting means, for absorbing positive ions produced when the secondary electrons are gasamplified by the gas. The electrode may be constituted by a further fine tube extended from a pressure limiting aperture to a position just above the sample and formed with a path of the electron beam. The absorption of the positive ions prevents a positive charge-up of the sample, whereby a voltage between the sample and the secondary electron detecting means can be kept at a fixed level.

Abstract: An electron beam apparatus used in a cell projection method has a system for correcting the electron optics. A figured electron beam that has been passed through a cell having a complex figure shape is directed onto a stage on which a substrate is positioned. A fine hole is formed in the substrate and an electron detector is positioned underneath the fine hole to receive the electrons that pass through the fine hole. The output signal of the electron detector is processed to provide a representation of the degree of focus and astigmatism correction of the electron optics. When a line and space pattern is used to shape the electron beam, the output signal from the electron detector has a series of peak intensity values that, when maximized, indicate an optimum correction of the electron optics. Optionally, a limited aperture is positioned between the substrate having a fine hole and the electron detector to limit the detection of scattered electrons that have not passed through the fine hole.

Abstract: An ion implantation system composed of an ion source to generate ion beam, a mass analyzing region to select ions having a predetermined mass from the ion beam, an acceleration region to accelerate the ion beam selected, scanning regions to respectively scan the ion beam toward the X and Y directions, and protecting means located along the exposed surface of the inner wall of the mass analyzing region. The protecting means may be formed of a thin silicon plate, and located to cover the inner wall of the mass analyzing region. Preferably, the silicon plate is located at an upper and a lower portion of an exposed surface of the inner wall of the mass analyzing region. The protecting means may be formed of plurality of silicon plates that can be disassembled.

Abstract: A light source directs ultraviolet light onto a test surface and a detector detects a current of photoelectrons generated by the light. The detector includes a collector which is positively biased with respect to the test surface. Quality is indicated based on the photoelectron current. The collector is then negatively biased to replace charges removed by the measurement of a nonconducting substrate to permit subsequent measurements. Also, the intensity of the ultraviolet light at a particular wavelength is monitored and the voltage of the light source varied to maintain the light a constant desired intensity. The light source is also cooled via a gas circulation system. If the test surface is an insulator, the surface is bombarded with ultraviolet light in the presence of an electron field to remove the majority of negative charges from the surface. The test surface is then exposed to an ion field until it possesses no net charge. The technique described above is then performed to assess quality.

Abstract: Compact and economical apparatus for use in accelerator mass spectrometry for mass selection and attenuation of each isotope by a predetermined fraction that is necessary to permit isotope sequencing through the accelerator stage, by a rotating shutter whose attenuation characteristics are defined by its mechanical shape.

Abstract: The ablation threshold of a laser fluence with respect to the surface of a sample manufactured in a high vacuum chamber is determined by using the sample. The quantity of vacancy-type defects is determined by radiating a laser beam having a fluence slightly higher than the ablation threshold on the surface. At the same time, the quantities of adatom-type and kink-type defects are determined by radiating a pulsed laser beam having a fluence slightly lower than the ablation threshold on the surface repeatedly to obtain the relation between an emission yield and the number of laser pulses. The quantity of the adatom-type defects is obtained by determining the area (total quantity of emitted atoms) of a rapidly decreasing portion of the relation. The quantity of kink-type defects is obtained by determining a magnitude of an emission yield of a slowly decreasing portion of the relation.

Abstract: An ion cyclotron resonance cell having two adjacent sections separated by a center trapping plate. The first section is defined by the center trapping plate, a first end trapping plate, and excitation and detector electrodes. The second section includes a second end trapping plate spaced apart from the center plate, a mirror, and an analyzer. The analyzer includes a wavelength-selective light detector, such as a detector incorporating an acousto-optical device (AOD) and a photodetector. One or more ion guides, grounded plates with holes for the ion beam, are positioned within the vacuum chamber of the mass spectrometer between the ion source and the cell. After ions are trapped and analyzed by ion cyclotron resonance techniques in the first section, the ions of interest are selected according to their mass and passed into the second section for optical spectroscopic studies. The trapped ions are excited by light from a laser and caused thereby to fluoresce.

Abstract: An electron beam writing system which permits a relatively low voltage to be applied to perform high speed focus correction with high accuracy. The electron beam writing system includes a focus corrector arranged inside a lens which provides the largest product of the magnification factors of the lens and all succeeding lenses and the optical path length of the lens at issue. Thus, the electron beam provides high sensitivity and a small change in the magnification ratio due to the correction.

Abstract: A prefocused lamp and reflector assembly comprises an elongated lamp having opposite end portions that extend through aligned openings in the wall defining the reflective cavity. The end portions of the lamp are engaged in receptacle portions on the base of the assembly, and the reflector is affixed to the base in a position empirically focused to afford maximum radiation output intensity.

Abstract: An ultrafine tip for AFM and STM profilometry of trenches having sidewalls. The tip includes a lateral circumferential edge protrusion to allow profilometry of the sidewalls of a trench located in a semiconductor or insulator substrate.