Abstract: Photographic elements are disclosed having a first coupler represented by the formula:COUP.sub.1 -T-INHwhereinCOUP.sub.1 is a coupler moiety,T is a timing group bonded to INH through a substituted or unsubstituted methylene group contained in T and bonded to COUP.sub.1 through an O, S, or N atom contained in T,and INH is a development Inhibitor moiety, andwherein the T-INH group is able to undergo electron transfer along a conjugated system therein to cleave INH after T-INH is cleaved from COUP.sub.1, anda second coupler represented by the formula:COUP.sub.2 -(TIME).sub.n -S-R.sub.1 -R.sub.2wherein COUP.sub.2 is a coupler moiety, TIME is a timing group, n is 0 or 1, R.sub.1 is a divalent linking group that does not include a heterocyclic ring attached directly to S, and R.sub.2 is a water solubilizing group.

Abstract: Color photographic element comprising residual magenta coupler scavenger ionizable epoxy compounds in combination with a specific class of image stabilizers are disclosed. Such elements comprise a support bearing thereon: (a) a photosensitive first layer comprising (i) a silver halide emulsion, (ii) a magenta coupler dispersion, and (iii) an image stabilizer of the following formula STG-A: ##STR1## wherein R.sub.1 represents an alkyl group, a cycloalkyl group, an alkenyl phenyl group, an aryl group, a heterocyclic group, an acyl group, a bridged hydrocarbon group, an alkyl sulfonyl group or an aryl sulfonyl group; R.sub.

Abstract: A photographic material has been coated on at least one side of a support with in at least one photosensitive layer hexagonal and/or circular tabular silver halide emulsion crystals occupying at least 70% of the total projected area of all grains, having a thickness of 0.15 to 0.30 .mu.m, a coefficient of variation of the tabular grains between 0.15 and 0.45 and an average aspect ratio of at least 2:1, prepared in the absence of ammonia by growing the nuclei, prepared at a pBr value between 1.0 and 2.0 and consuming less than 10% by weight of silver nitrate, during a first growth step at a pBr value between 1.0 and 2.5 consuming at least 10% by weight of silver nitrate and during a second growth step at a pBr value higher than 2.7 during the addition of at least 40% of the total amount of silver nitrate used.

Abstract: Changing (varying, irregular) resist thickness on semiconductor wafers having irregular top surface topography or having different island sizes, affects the percent reflectance (and absorption efficiency) of incident photolithographic light, and consequently the critical dimensions of underlying features being formed (e.g., polysilicon gates). A low solvent content resist solution that can be applied as an aerosol provides a more uniform thickness resist film, eliminating or diminishing photoresist thickness variations. A top antireflective coating (TAR) also aids in uniformizing reflectance, despite resist thickness variations. The two techniques can be used alone, or together. Hence, better control over underlying gate size can be effected, without differential biasing.

Abstract: There are disclosed a hexagonal silver halide tabular emulsion having an excellent monodispersibility and a silver halide photographic material which contains the above tabular silver halide emulsion and excels in a graininess, a sensitivity and a preservability. The above silver halide photographic emulsion is prepared in the presence of at least one of the polymers having a recurring unit represented by the Formula (1) and at least one of the polymers having a recurring unit represented by Formula (2):--(R--O).sub.n -- (1)--(CH.sub.2 CH.sub.2 O).sub.m -- (2)wherein R represents an alkylene group having 3 to 10 carbon atoms; and n and m each represents an average number of the recurring unit, respectively and each represents 4 to 200.

Abstract: Disclosed are a silver halide emulsion which comprises multi-layered silver halide grains each having a major face of {100}, having a total Cl content of 20 mol %/mol of Ag or more and having an aspect ratio of 2 or more and which has been sensitized by selenium and/or tellurium sensitization, and a silver halide photographic material comprising the emulsion. The emulsion has a high sensitivity and a low fog, while having a high covering power. The intergranular uniformity of the halide composition in the multi-layered silver halide grains in the emulsion is good. Rapid processing of the photographic material is possible.

Abstract: Gaseous effluents containing oxygen and no greater than 2% by volume of sulfur dioxide, SO.sub.2, for example those emanating from facilities for the industrial-scale production of sulfuric acid, are converted into useful solutions of ammonium or of alkali or alkaline earth metal bisulfites, by first absorbing such gaseous effluent in a solution of ammonium or of an alkali or alkaline earth metal sulfite and bisulfite, at a pH ranging from 5 to 7, and, secondly, contacting the solution thus produced with an acidic reagent, advantageously a gaseous feedstream containing oxygen and greater than 2% by volume of sulfur dioxide, the O.sub.2 / SO.sub.2 ratio by volume thereof being less than 5.

Abstract: A light-sensitive silver halide photographic emulsion is disclosed, wherein at least 70% of the total projected area of silver halide grains are tabular grains having an average aspect ratio of a diameter to a thickness of 2 or more, an average value of the longest distances between two or more parallel twin planes contained in the respective tabular grains is 0.008 .mu.m or more, and a variation coefficient of the longest distances between parallel twin planes is 35% or less, and wherein the silver halide emulsion is spectrally sensitized with a substantially slightly water-soluble sensitizing dye by adding the dye to the emulsion in the form of a dispersion of solid particles dispersed in an aqueous solution substantially free from an organic solvent or surfactant.

Abstract: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, a method of forming the anti-reflective layer therewith and a method of forming a resist pattern using a novel anti-reflective layer obtained therewith. The optimum condition of the anti-reflective layer is determined and the anti-reflective layer is formed by the methods described below. Further, an optimal anti-reflective layer is obtained by the method which is used for forming the resist pattern.

Abstract: The photographic element having an antistatic layer composed of a polymer entity of (a) a water-soluble, electrically conductive polyelectrolyte, e.g., poly(sodium styrenesulfonate) homopolymer, and (b) a polymer derived from a polymerization of a monomer, such as a polyfunctional aziridine, in the presence of the polyelectrolyte. When applied to the surface of a support as a component of a coating mixture, the monomer polymerizes and entraps the polyelectrolyte molecules forming a distinct and permanent antistatic layer on the support. The electrically conductive polyelectrolyte molecules confer antistatic protection for photographic materials.

Abstract: The present invention provides a dye-donor element for use according to thermal dye sublimation transfer. The dye-donor element comprises a support having thereon a dye layer comprising a polymeric binder and a dye corresponding to the following general formula (I): ##STR1## wherein: Z represents hydrogen or a substituent.X represents N-R or ##STR2## R represents NR.sup.3 R.sup.4 or the residue of an aromatic coupling compound E-Q wherein Q is a group displaceable by a diazotized amine:R.sup.1 represents NR.sup.3 R.sup.4, OR.sup.12 or SR.sup.12 ;R.sup.2 represents hydrogen, cyano, COR.sup.13, CO.sub.2 R.sup.13, CONR.sup.14 R.sup.15, SO.sub.2 R.sup.16 ;R.sup.3 and R.sup.4 each independently represent hydrogen, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an a heterocyclic group or R.sup.3 and R.sup.

Abstract: A light-sensitive silver halide emulsion contains tabular silver halide grains with an equivalent-circle diameter/thickness ratio of 8 to 100. In this light-sensitive silver halide emulsion, a variation coefficient of a grain size distribution of the tabular silver halide grains is 1% to 20%, and 50% or more (number) of all of the tabular silver halide grains are grains whose ratio, b/a, of a longest distance, a, between two or more twin planes of the tabular silver halide grain to a grain thickness, b, is 1.5.ltoreq.b/a<5.

Abstract: The present invention provides a donor element comprising on a support a donor layer comprising a binder, a thermotransferable reducing agent capable of reducing a silver source to metallic silver upon heating and a thermotransferable dye. When such a donor element is used in a thermal transfer printing process in conjunction with a receiving element having a receiving layer that contains a thermoreducible silver source, an image of a neutral black tone and having a high optical density is obtained.

Abstract: Changing (varying, irregular) resist thickness on semiconductor wafers having irregular top surface topography or having different island sizes, affects the percent reflectance (and absorption efficiency) of incident photolithographic light, and consequently the critical dimensions of underlying features being formed (e.g., polysilicon gates). A low solvent content resist solution that can be applied as an aerosol provides a more uniform thickness resist film, eliminating or diminishing photoresist thickness variations. A top antireflective coating (TAR) also aids in uniformizing reflectance, despite resist thickness variations. The two techniques can be used alone, or together. Hence, better control over underlying gate size can be effected, without differential biasing.

Abstract: A silver halide photographic emulsion which comprises silver halide grains having a silver chloride content of at least 60 mol % and an octatetracontahedral crystal form of the kind which is constructed of 48 triangular faces, every one of which contacts convexly with each of its two adjoining faces to form a line and concavely with its one adjoining face to form a line, with the grains being formed in the presence of a synthetic polymer peptizer which contains, as repeating units, units derived from a thioether linkage-containing ethylenically unsaturated monomer, in a mole fraction of from about 20 to 100 mole %, thereby achieving low fog and high sensitivity.

Abstract: A novel multiple level mask (e.g. tri-level mask 36) process for masking achieves a desired thick mask with substantially vertical walls and thus improves the ion milling process of ceramic materials (e.g. BST). An embodiment of the present invention is a microelectronic structure comprising a ceramic substrate, an ion mill mask layer (e.g. photoresist 42) overlaying the substrate, a dry-etch-selective mask layer (e.g. TiW 40) overlaying the ion mill mask layer, the dry-etch-selective mask layer comprising a different material than the ion mill mask layer, a top photosensitive layer (38) overlaying the dry-etch-selective mask layer, the top photosensitive layer comprising a different material than the dry-etch-selective mask layer, and a predetermined pattern formed in the top photosensitive layer, the dry-etch-selective mask layer and the ion mill mask layer. The predetermined pattern has substantially vertical walls in the ion mill mask layer.

Abstract: Disclosed herein is a polyamic acid composition which comprises an aromatic carboxylic acid compound having phenolic hydroxyl groups, polyamic acid, and a photosensitizer made of a diazide compound, and which can form a polyimide film pattern having a high resolution and capable of firmly adhering to a substrate.

Abstract: A positive-tone photoresist is provided. The photoresist comprises a polymer, a photoactive agent, and a dissolution inhibitor. The dissolution inhibitor comprises a compound of Formula I: ##STR1## wherein R.sub.1 is a C.sub.1 -C.sub.20 alkyl, cyclo alkyl, benzyl, phenyl, alkyl substituted cyclo alkyl, alkoxy substituted cyclo alkyl, alkyl substituted phenyl, alkoxy substituted phenyl, acetoxy substituted phenyl, hydroxy substituted phenyl, t-butyloxycarbonyloxy substituted phenyl, diphenyl alkyl, alkyl substituted diphenyl, alkoxy substituted diphenyl, alkyl substituted diphenyl alkyl, or alkoxy substituted diphenyl alkyl; and R.sub.2 is a C.sub.1 -C.sub.20 alkyl, cyclo alkyl, benzyl, phenyl, alkyl substituted cyclo alkyl, alkoxy substituted cyclo alkyl, alkyl substituted phenyl, alkoxy substituted phenyl, hydroxy substituted phenyl, acetoxy substituted phenyl, or t-butyloxycarbonyloxy substituted phenyl.The present invention also provides a method of making microelectronic structures.

Abstract: The present invention provides a bottom anti-reflective coating compositions having a very low level of metal ions and a process for producing such compositions utilizing specially treated ion exchange resins. The present invention also provides photoresists produced using such bottom anti-reflective coating compositions and a method for producing semiconductor devices using such photoresists.

Abstract: A method for the preparation of a pattern overlay accuracy-measuring mark, consisting of an inner box and an outer box. The method creates a groove along the inside boundary line of the outer box so as to form an enlarged step. The enlarged step prevents inaccuracy in defining the boundary line of the outer box whose inaccuracy is mainly attributed to reflow which occurs at the boundary line as a metal layer is later coated over the outer box. The method can easily define the boundary line and thus more define the overlay accuracy.