Abstract: A processing chamber includes an upper surface and a showerhead arranged to supply gases through the upper surface into the processing chamber. At least a portion of the showerhead extends above the upper surface of the processing chamber. A shroud enclosure is arranged on the upper surface of the processing chamber. The shroud enclosure is arranged around the portion of the showerhead extending above the upper surface of the processing chamber and is configured to isolate radio frequency interference generated by the showerhead.

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

Abstract: In a plasma processing apparatus, an additional viewing window is disposed between an infrared temperature sensor and a view window, and the additional viewing window is cooled to be retained at room temperature (20° C. to 25° C.), to reduce and to stabilize electromagnetic waves emitted from the viewing window. By correcting the value of the electromagnetic waves, the measurement precision of the temperature monitor is increased and it is possible to measure and to control the dielectric window temperature in a stable state.

Abstract: A method of depositing a layer includes measuring a physical property that is related to an air pressure in a reactor chamber of a deposition apparatus. A main gas mixture including a source gas and an auxiliary gas is introduced into the reactor chamber at atmospheric pressure, the source gas including a precursor material and a carrier gas. A gas flow of at least one of the source gas and the auxiliary gas into the reactor chamber is controlled in response to a change of the air pressure in the reactor chamber.

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Abstract: A wafer processing apparatus is provided. The apparatus includes: a heating plate through which vacuum ports are formed; a plurality of temperature sensors; a heating device configured to heat the heating plate; first and second power supplies; temperature controllers to generate first and second feedback temperature control signals for controlling power output power supplies based on measurement values generated by the temperature sensors; an electronic pressure regulator configured to provide vacuum pressure for fixing a wafer to the plurality of vacuum ports; and a wafer chucking controller configured to control the electronic pressure regulator, and generate a feedback pressure control signal for controlling the electronic pressure regulator based on the first and second feedback temperature control signals.

Abstract: A substrate processing apparatus having an improved exhaust structure includes a grounded conductive extension portion configured to prevent generation of parasitic plasma in an exhaust space connected to a reaction space. The substrate processing apparatus prevents generation of parasitic plasma in an area, such as the reaction space, other than the reaction space. Thus, power loss may be prevented and a stable plasma process may be achieved.

Abstract: A pumping line arrangement includes a chamber connecting line which is fluidly connectable to a process chamber that forms part of a semiconductor fabrication tool. The pumping line arrangement also includes a valve module which is fluidly connected to the chamber connecting line. The valve module splits the chamber connecting line into respective first and second pumping lines. The first pumping line is intended to carry a first process flow and the second pumping line is intended to carry a second process flow which is incompatible with the first process flow. At least one of the first pumping line or the second pumping line includes fluidly connected therewithin a pre-abatement module that is configured to remove one or more incompatible constituents from the process flow intended to be carried by the other pumping line.

Abstract: A stage for mounting a workpiece and an edge ring is provided, the stage including a first flow path and a second flow path along each of which a fluid flows, within the stage; a bifurcation at which an inlet port of the first flow path and an inlet port of the second flow path are coupled; a junction at which an outlet port of the first flow path and an outlet port of the second flow path are coupled; and a member provided at least one of the bifurcation and the junction, the member having at least one opening that communicates with the first flow path and the second flow path.

Abstract: Embodiments of mechanisms for processing a semiconductor wafer are provided. A method for processing a wafer includes providing a wafer process apparatus. The wafer process apparatus includes a chamber and a stage positioned in the chamber for supporting the semiconductor wafer. The method also includes supplying a process gas to the semiconductor wafer via a discharging assembly that is adjacent to the stage. The discharging assembly includes a discharging passage configured without a vertical flow path section.

Abstract: This invention relates to a metal component, a manufacturing method thereof, and a process chamber having the metal component, and particularly to a metal component useful in a display or semiconductor manufacturing process, a manufacturing method thereof, and a process chamber having the metal component, wherein among addition elements of an aluminum alloy that constitutes the metal substrate of the metal component, the addition element existing on the surface thereof is removed, and a barrier layer having no pores is formed, thereby solving problems attributable to a conventional anodized film having a porous layer and attributable to the addition element in the form of particles on the surface of the metal substrate.

Abstract: An edge ring and process for fabricating an edge ring are disclosed herein. In one embodiment, an edge ring includes an annular body and a plurality of thermal breaks disposed within the annular body. The thermal breaks are disposed perpendicular to a center line of the annular body of the edge ring.

Abstract: A substrate support unit for thin film deposition on a substrate including a pattern structure and a thin film deposition apparatus including the substrate support unit includes a heater; an RF electrode; a first rod connected to the heater; a second rod connected to the RF electrode; and an RF shield spaced apart from the second rod, disposed to surround the second rod, and extending in an extension direction of the second rod.

Abstract: There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.

Abstract: An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a substrate stage, at least one bottom pumping port, at least one hollow component, a baffle and a shower head assembly, wherein the hollow component has an exhaust hole. The baffle is below the hollow component and forms an upper exhaust path with the hollow component, so that the flow field of the precursor in the atomic layer deposition process can be adjusted to a slow flow field to make a uniform deposition on the substrate.

Abstract: Embodiments described herein generally relate to methods for controlling a processing system. Particularly, subfab components of the processing system may be controlled based on the flow of materials into the processing system. In some embodiments, the flow of an inert gas used to dilute the effluent gases may be controlled in accordance with the flow of one or more precursor gases. Thus, the cost of running the processing system is reduced while mitigating critical EHS concerns.

Abstract: Methods and apparatus for controlling a flow of process material to a deposition chamber.

Abstract: An assembly used in a process chamber for depositing a film on a wafer. A pedestal assembly includes a pedestal movably mounted to a main frame. A lift pad rests upon the pedestal and moves with the pedestal assembly. A raising mechanism separates the lift pad from the pedestal, and includes a hard stop fixed to the main frame, a roller attached to the pedestal assembly, a slide moveably attached to the pedestal assembly, a lift pad bracket interconnected to the slide and a pad shaft extending from the lift pad, and a lever rotatably attached to the lift pad bracket. The lever rests on the roller when not engaged with the upper hard stop. When the pedestal assembly moves upwards, the lever rotates about a pin when engaging the upper hard stop and roller, and separates the lift pad from the pedestal by a process rotation displacement.