Abstract: A fluid control system is provided which, without reducing the supply flow rate of a fluid, is considerably more miniaturized and integrated. This fluid control system includes base blocks and fluid devices respectively installed on upper surfaces of the base blocks. The base blocks each include protruding pipe parts protruding in a longitudinal direction. The protruding pipe parts each communicate with a corresponding second flow path. The protruding pipe part on a downstream side end surface of the base block and the protruding pipe part on an upstream side end surface of the base block are air-tightly or liquid-tightly connected to each other by a welding material.

Abstract: A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward section lacks a ring extending upward from the face.

Abstract: Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an H2-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an air gap. A method for selectively etching tin oxide in a presence of SiO2, SiC, SiN, SiOC, SiNO, SiCNO, or SiCN, includes, in some embodiments, contacting the substrate with a plasma formed in a process gas comprising at least about 50% H2. Etching of tin oxide can be performed without using an external bias at the substrate and is preferably performed at a temperature of less than about 100° C.

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The cambers may include a pedestal. The chambers may include a first showerhead positioned between the lid and the processing region, and may include a faceplate positioned between the first showerhead and the processing region. The chambers may also include a second showerhead positioned within the chamber between the faceplate and the processing region of the semiconductor processing chamber. The second showerhead may include at least two plates coupled together to define a volume between the at least two plates. The at least two plates may at least partially define channels through the second showerhead, and each channel may be characterized by a first diameter at a first end of the channel and may be characterized by a plurality of ports at a second end of the channel.

Abstract: The invention relates to coating precursor nozzle (15) for subjecting a surface of a substrate (5) to a coating precursor. The nozzle (15) having a nozzle output face (10a), first and second nozzle side edges (31, 32), and first and second nozzle end edges (33, 34). The coating precursor nozzle (15) comprising a precursor supply channel (16), a first discharge channel (17a), a first cross purge gas channel (18a), a second cross purge gas channel (18b), a first edge purge gas channel (19a) and at least one first auxiliary purge gas channel (20). The invention further relates to a nozzle head (1).

Abstract: A plasma processing apparatus includes: a shower head including a ceiling plate having a plurality of gas holes, and a base member having a space so as to supply the processing gas to the plurality of gas holes; a temperature adjustment mechanism provided in the shower head; an acquisition unit configured to acquire a combination of a plasma parameter and pressure in the space in the base member; an estimation unit configured to estimate temperature of the ceiling plate corresponding to the acquired combination of the parameter and the pressure with reference to temperature information indicating the temperature of the ceiling plate corresponding to the combination of the parameter and the pressure; and a temperature controller configured to control the temperature adjustment mechanism such that the estimated temperature of the ceiling plate becomes target temperature when a plasma processing is performed.

Abstract: A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

Abstract: A semiconductor processing apparatus is disclosed, which comprises a chamber body having an interior volume, a substrate support pedestal disposed in the interior volume, a gas outlet member positioned above the substrate support pedestal inside the interior volume, having a plurality of dispense nozzles, and a gas guiding device positioned between the gas outlet member and the substrate support pedestal. The gas guiding device includes a plurality of petal elements pivotally arranged around the dispense nozzles of the gas outlet member and circumferentially overlapping one another, configured to dynamically adjust an output gas distribution over the substrate support pedestal.

Abstract: A substrate processing a technology including: a substrate holder; a tubular reactor that houses the substrate holder; an inlet flange connected to the tubular reactor including a plurality of gas introduction ports; a lid that closes a lower opening of the inlet flange in a manner such that the substrate holder can be carried in and out; heater elements disposed along the outer peripheral surface of the inlet flange while avoiding the gas introduction ports; temperature sensors thermally coupled to the inlet flange or any heater element and adapted to detect temperatures; and a temperature controller that divides of the heater elements into groups and controls power supply to the respective heater elements independently for each of the groups based on temperatures detection temperatures detected by the temperature sensors.

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Abstract: A semiconductor processing device is provided. The device includes a reaction chamber, a first gas inlet mechanism, and a second gas inlet mechanism that includes a gas inlet, a uniform-flow chamber, at least one gas outlet, and at least one switch element. The gas inlet communicates with the uniform-flow chamber and arranged to deliver a process gas into the uniform-flow chamber. The at least one gas outlet is between the reaction chamber and the uniflow-flow chamber. The at least one switch element is disposed in each gas outlet and arranged to enable the uniform-flow chamber to communicate with the reaction chamber when the process gas is being delivered into the uniform-flow chamber through the gas inlet, and to isolate the uniform-flow chamber from the reaction chamber when no process gas is being delivered into the uniform-flow chamber.

Abstract: An atmospheric pressure plasma generating device includes a nozzle block in which fourth gas passages from which plasma gas is emitted are formed, is covered by cover, and a through-hole is formed in the cover such that the leading end of the fourth gas passage is positioned on the inside. Heated gas is supplied inside the cover and is emitted from the through-hole of the cover, and plasma gas is emitted so as to penetrate the heated gas. By the plasma gas being surrounded by the heated gas in this manner, deactivation of the plasma gas is prevented. A distance between the leading end of the fourth gas passage and an opening of the through-hole at an outer wall of the cover is set from 0 to 2 mm in an emission direction of the plasma gas.

Abstract: An atomic layer deposition apparatus including a deposition head that is rotatably mounted around a central deposition head axis and including a susceptor having an upper surface for carrying substrates. The lower surface comprises a plurality of process sections. Each process section includes a purge gas injection zone, a first precursor gas injection zone, a gas exhaust zone, a purge gas injection zone, a second precursor gas injection zone and a gas exhaust zone. Each zone radially extends from a radially inward part of the lower surface to a radially outward part of the lower surface of the deposition head. The combination of distance between the lower surface and the upper surface, the rotational speed of the deposition head and the flow rate and the pressure of the purge gas flows are selected such that the first and second precursor gases are substantially prevented from mixing.

Abstract: A gas delivery system for a substrate processing system includes a first manifold and a second manifold. A gas delivery sub-system selectively delivers gases from gas sources. The gas delivery sub-system delivers a first gas mixture to the first manifold and a second gas mixture. A gas splitter includes an inlet in fluid communication with an outlet of the second manifold, a first outlet in fluid communication with an outlet of the first manifold, and a second outlet. The gas splitter splits the second gas mixture into a first portion at a first flow rate that is output to the first outlet and a second portion at a second flow rate that is output to the second outlet. First and second zones of the substrate processing system are in fluid communication with the first and second outlets of the gas splitter, respectively.

Abstract: A CVD reactor for deposition of silicon carbide material on silicon carbide substrates, may comprise: an upper gas manifold and a lower gas manifold; and a substrate carrier comprising a gas tight rectangular box open on upper and lower surfaces, a multiplicity of planar walls across the width of the box, the walls being equally spaced in a row facing each other and defining a row of channels within the box, the walls comprising mounting fixtures for a plurality of substrates and at least one electrically resistive heater element; wherein the upper gas manifold and the lower gas manifold are configured to attach to the upper and lower surfaces of the substrate carrier, respectively, connect with upper and lower ends of the channels, and isolate gas flows in odd numbered channels from gas flows in even numbered channels, wherein the channels are numbered in order along the row; and wherein said electrically resistive heater elements and said mounting fixtures are coated with a material able to withstand exposu

Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for gas diffuser support structure for a vacuum chamber. The gas diffuser support structure comprises a backing plate having a central bore formed therethrough, an integrated cross structure formed in the central bore, and a gas deflector coupled to the cross structure by a single fastener.

Abstract: An atomic layer deposition (ALD) method can include pulsing a first reactant vapor into a reactor assembly. The first reactant vapor is supplied to a first reactant gas line. An inactive gas is supplied to a first inactive gas line at a first flow rate. The first reactant vapor and the inactive gas are fed to the reactor assembly by way of a first feed line. The reactor assembly is purged by supplying the inactive gas to the first inactive gas line at a second flow rate higher than the first flow rate. A first portion of the inactive gas can be fed back along a diffusion barrier portion of the first reactant gas line to provide an inert gas valve (IGV) upstream of the first inactive gas line. A second portion of the inactive gas can be fed to the reactor assembly by way of the first feed line.

Abstract: A temperature controller for semiconductor fabrication comprises a lower chiller connected with a lower chamber of a processing chamber and configured to adjust a temperature of the lower chamber, an electrostatic chuck disposed in the lower chamber and an upper chiller connected with an upper chamber of the processing chamber and configured to adjust a temperature of the upper chamber, a heater disposed in the upper chamber. In the temperature controller for semiconductor fabrication, the three-way valve may be installed on the cooling fluid supplying pipe, and the bypass pipe may be installed between the three-way valve and the cooling fluid collecting pipe to reduce the degree of bypass opening of the three-way valve.