Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate, a hard mask layer formed over the bottom layer, a material layer formed over the hard mask layer, and a photoresist layer formed over the material layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, where the developing removes portions of the photoresist layer and the material layer in a single step without substantially removing portions of the hard mask layer, and etching the hard mask layer using the photoresist layer as an etch mask. The material layer may include acidic moieties and/or acid-generating molecules. The material layer may also include photo-sensitive moieties and crosslinking agents.

Abstract: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1; and a solvent and a method of forming patterns using the resist underlayer composition: In Chemical Formula 1, at least one of A1 and A2 is a group represented by Chemical Formula A:

Abstract: A method of manufacturing an extreme ultraviolet (EUV) lithography mask includes forming an image pattern in an absorption layer of EUV mask blank. The EUV mask blank includes: a multilayer stack including alternating molybdenum (Mo) and silicon (Si) layers disposed over a first surface of a mask substrate, a capping layer disposed over the multilayer stack, and an absorption layer disposed over the capping layer. A border region surrounds the image pattern having a trench wherein the absorption layer, the capping layer and at least a portion of the multilayer stack are etched. Concave sidewalls are formed in the border region or an inter-diffused portion is formed in the multilayer stack of the trench.

Abstract: [Problem to be Solved] To provide a bottom antireflective coating forming composition which can show high etching resistance and can be crosslinked even at a relatively low temperature. Further, to provide a resist pattern manufacturing method and a device manufacturing method using the same. [Solution] The bottom antireflective coating forming composition comprises: a polymer A comprising specific repeating units; a low molecular crosslinking agent having a molecular weight of 100 to 3,000; and a solvent. The resist pattern manufacturing method and the device manufacturing method using the same are also provided.

Abstract: Disclosed is a method for fabricating a spherical concave mirror in an optical waveguide based on ultraviolet (UV) grayscale lithography. A key component is a specially designed mask pattern composed of a rectangle as well as a semicircle adjacent to the rectangle, where a rectangular area has no grayscale distribution, and UV light penetrating through different portions of the rectangular area has the same intensity; a semicircular area has the grayscale distribution, and the UV light penetrating through the semicircular area with the grayscale distribution is changed in intensity from the center of a circle in the radius direction according to a special function distribution law; an interlayer photoresist in the rectangular area is irradiated by the UV light penetrating through a mask plate and is developed to form an optical waveguide core.

Abstract: A method for manufacturing a color slide for an automobile projection lamp includes: forming a plurality of same color pattern units on a glass substrate, each of the color pattern units being composed of a plurality of color coating layers. The plurality of color coating layers are formed by sequentially depositing materials having different colors on a surface of the glass substrate in accordance with different colors. Finally, the glass substrate is cut and separated in unit of one color pattern unit to form an independent color slide with the color pattern. The color slide can be mounted to an automobile projection lamp system for projecting the color pattern.

Abstract: A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a solvent and a polymer including monomer units represented by the following formulae (I) and (II), respectively; an exposure step; a development step; and a step of rinsing the developed resist film using a rinsing liquid having a surface tension of 20.0 mN/m or less. In formula (I), R1 is an organic group including 3 to 7 fluorine atoms. In formula (II), R2 is a hydrogen atom, a fluorine atom, or an unsubstituted or fluorine atom-substituted alkyl group, R3 is a hydrogen atom or an unsubstituted or fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.

Abstract: Oxime ester compounds of the formula I, II, III, IV or V wherein Z is for example Z1 for is NO2, unsubstituted or substituted C7-C20aroyl or unsubstituted or substituted C4-C20heteroaroyl; provided that at least one Z1 is other than NO2; Z2 is for example unsubstituted or substituted C7-C20aroyl; R1, R2, R3, R4, R5 and R6 for example are hydrogen, halogen, or unsubstituted or substituted C1-C20alkyl, unsubstituted or substituted C6-C20aryl, or unsubstituted or substituted C4-C20heteroaryl; R9, R10, R11, R12 and R13 for example are hydrogen, halogen, OR16, unsubstituted or substituted C1-C20alkyl; provided that R9 and R13 are neither hydrogen nor fluorine; R14 is for example unsubstituted or substituted C6-C20aryl or C3-C20heteroaryl Q is for example C6-C20arylene or C3-C20heteroarylene; Q1 is —C1-C20alkylene-CO—; Q2 is naphthoylene; Q3 is for example phenylene; L is for example O-alkylene-O—; R15 is for example hydrogen or C1-C20alkyl; R20 is for example hydrogen, or unsubstituted or substituted C1-

Abstract: Oxime ester compounds of the formula I, II, III, IV or V wherein Z is for example Z1 for is NO2, unsubstituted or substituted C7-C20aroyl or unsubstituted or substituted C4-C20heteroaroyl; provided that at least one Z1 is other than NO2; Z2 is for example unsubstituted or substituted C7-C20aroyl; R1, R2, R3, R4, R5 and R6 for example are hydrogen, halogen, or unsubstituted or substituted C1-C20alkyl, unsubstituted or substituted C6-C20aryl, or unsubstituted or substituted C4-C20heteroaryl; R9, R10, R11, R12 and R13 for example are hydrogen, halogen, OR16, unsubstituted or substituted C1-C20alkyl; provided that R9 and R13 are neither hydrogen nor fluorine; R14 is for example unsubstituted or substituted C6-C20aryl or C3-C20heteroaryl Q is for example C6-C20arylene or C3-C20heteroarylene; Q1 is —C1-C20alkylene-CO—; Q2 is naphthoylene; Q3 is for example phenylene; L is for example O-alkylene-O—; R15 is for example hydrogen or C1-C20alkyl; R20 is for example hydrogen, or unsubstituted or substituted

Abstract: Provided are a composition that has excellent pigment dispersibility without affecting the color of a pigment in a visible range, a curable composition, a cured film, a near infrared cut filter, an infrared transmitting filter; a solid image pickup element, an infrared sensor, and a camera module. The composition includes: a pigment; a pigment derivative that includes a compound represented by Formula (1); and a solvent, in which R1 and R2 represent an aryl group or the like, R3 to R6 represent a cyano group, a heteroaryl group, or the like, R7 and R8 each independently represent —BR9R10 or the like, R9 and R10 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an aryl group, a heteroaryl group, an alkoxy group, an aryloxy group, or a heteroaryloxy group, L represents a single bond or a linking group, X represents an acidic group or the like, m represents an integer of 1 to 10, and n represents an integer of 1 to 10.

Abstract: Oxime ester compounds of the formula I, II, III, IV or V wherein Z is for example Z1 for is NO2, unsubstituted or substituted C7-C20 aroyl or unsubstituted or substituted C4-C20heteroaroyl; provided that at least one Z1 is other than NO2; Z2 is for example unsubstituted or substituted C7-C20aroyl; R1, R2, R3, R4, R5 and R6 for example are hydrogen, halogen, or unsubstituted or substituted C1-C20alkyl, unsubstituted or substituted C6-C20aryl, or unsubstituted or substituted C4-C20heteroaryl; R9, R10, R11, R12 and R13 for example are hydrogen, halogen, OR16, unsubstituted or substituted C1-C20alkyl; provided that R9 and R13 are neither hydrogen nor fluorine; R14 is for example unsubstituted or substituted C6-C20aryl or C3-C20heteroaryl Q is for example C6-C20arylene or C3-C20heteroarylene; Q1 is —C1-C20alkylene-CO—; Q2 is naphthoylene; Q3 is for example phenylene; L is for example O-alkylene-O—; R15 is for example hydrogen or C1-C20alkyl; R20 is for example hydrogen, or unsubstituted or substituted C1

Abstract: There is provided a mask forming method, including: forming a photosensitive organic film on a workpiece; generating a first region and a second region in the photosensitive organic film by performing a selective exposure and a post-exposure baking on the photosensitive organic film, the first region having an acidic functional group in the photosensitive organic film, and the second region having a protective group in which the acidic functional group is protected; forming a salt in the first region by causing a basic substance to permeate into the first region using a substance staying in a gaseous state or a solid state; and removing the first region by dissolving the salt in a developer.

Abstract: A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film.

Abstract: A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a divalent hydrocarbon group and a carboxylate, fluorine-free sulfonamide, sulfonamide or halide anion offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

Abstract: A liquid developer containing a liquid carrier and a toner particle that is insoluble in the liquid carrier, wherein a particular substructure is bonded through a covalent bond to a surface of the toner particle, and a method of producing a liquid developer containing a liquid carrier and a toner particle that is insoluble in the liquid carrier, the method comprising a step (I) of covalently bonding, to a surface of the toner particle, a compound having a particular substructure.

Abstract: A resist composition comprising a base polymer and a quencher containing a sulfonium salt having an iodized benzene ring offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having an iodized benzene ring offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: The present disclosure provides a color filter substrate and a display panel. The color filter substrate is divided into a display region and a non-display region around the display region, and includes a base and a color filter layer on the base. The color filter layer includes a plurality of columns of color resists arranged at intervals, any two adjacent columns of color resists in the display region define one of a plurality of first openings, any two adjacent color resists in the non-display region define one of a plurality of second openings, and a width of an orthographic projection of the second opening on the base is greater than a width of an orthographic projection of the first opening on the base.

Abstract: A composition includes: a near infrared absorbing compound A that includes a ?-conjugated plane having a monocyclic or fused aromatic ring; and a solvent B, in which the solvent B includes a solvent B1 in which a solubility parameter is in a range between 19.9 MPa0.5 or higher and 22.3 MPa0.5 or lower and a solvent B2 in which a solubility parameter is lower than 19.9 MPa0.5 or higher than 22.3 MPa0.5, and a content of the solvent B2 in the solvent B is 9 mass % or lower.

Abstract: An extreme ultraviolet (EUV) developer composition for use in manufacturing a semiconductor is provided. More particularly an EUV developer composition for forming a fine pattern is provided, which is capable of forming a more uniform pattern and lowering EOP in a development process, the EUV developer composition including a water-soluble polymer represented by Chemical Formula 1, a nonionic surfactant represented by Chemical Formula 2, and an alkali compound.