Abstract: A semiconductor package includes a first mold layer at least partially encasing at least one photonic integrated circuit. A redistribution layer structure is fabricated on the first mold layer, the redistribution layer structure including dielectric material and conductive structures. A second mold layer at least partially encasing at least one semiconductor chip is fabricated on the redistribution layer structure. The redistribution layer structure provides electrical pathways between the at least one semiconductor chip and the at least one photonic integrated circuit. One or more voids are defined in the second mold layer in an area above an optical interface of the at least one photonic integrated circuit such that light is transmittable through dielectric material above the optical interface.

Abstract: A method for fabricating a photonic package device is provided. The method includes patterning a semiconductor layer of a semiconductor-on-insulator (SOI) substrate into a waveguide structure and at least one first semiconductor pillar; forming a metal-dielectric stack over the waveguide structure and the first semiconductor pillar; etching an opening in the metal-dielectric stack to expose the first semiconductor pillar; etching an insulator layer of the SOI substrate to form at least one insulator cap below the first semiconductor pillar; and etching a base semiconductor substrate of the SOI substrate to form at least one second semiconductor pillar below the insulator cap.

Abstract: A miniaturized integrated frequency locked optical whispering evanescent resonator comprises: an optical source; an optical path having a first end and a second end, the optical path coupled to the optical source at the first end; an optical resonator disposed along a side of the optical path between the first and second ends, the optical resonator coupled to the optical path through an evanescent field to excite an optical whispering-gallery mode; an optical receiver coupled to the second end of the optical path; and a digital data processor configured to communicate with the optical receiver and the optical source, wherein the digital data processor comprises a frequency locking system and a data acquisition system, wherein the frequency locking system tunes the frequency of the optical source to the optical whispering-gallery mode of the optical resonator, and wherein the resonator weighs less than 15 kg and is containable within a volume less than 30 liters.

Abstract: In various embodiments, the beam parameter product and/or beam shape of a laser beam is adjusted by directing the laser beam across a path along the input end of a cellular-core optical fiber. The beam emitted at the output end of the cellular-core optical fiber may be utilized to process a workpiece.

Abstract: Embodiments herein describe using a double wafer bonding process to form a photonic device. In one embodiment, during the bonding process, an optical element (e.g., a high precision optical element) is optically coupled to an optical device in an active surface layer. In one example, the optical element comprises a nitride layer which can be patterned to form a nitride waveguide, passive optical multiplexer or demultiplexer, or an optical coupler.

Abstract: A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Abstract: A capacitive electro-optical modulator includes a silicon layer having a cavity having sidewalls and a floor. A germanium or silicon-germanium strip overlies the silicon layer within the cavity. A silicon strip overlies the germanium or silicon-germanium strip within the cavity. The silicon strip is wider than the germanium or silicon-germanium strip. An insulator fills the cavity laterally adjacent the germanium or silicon-germanium strip and the silicon strip and extending between the sidewalls of the cavity. An upper insulating layer overlies the silicon strip and the insulator. A layer of III-V material overlies the upper insulating layer. The layer of III-V material formed as a third strip is arranged facing the silicon strip and separated therefrom by a portion of the upper insulating layer.

Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

Abstract: The present disclosure provides an optical waveguide connection assembly and an optical module including the optical waveguide connection assembly. The optical waveguide connection assembly includes a holder, an optical fiber, a connection member and an optical coefficient adjusting member. The holder has a first part and a second part. The first part is positioned a side of the optical element, the second part is positioned above the optical element. The optical fiber is fixed to the first par. The connection member is provided between the second part and the optical element. The optical coefficient adjusting member is provided between the optical fiber and the optical element, so that a beam is capable of being transferred between the optical fiber and the optical element via the optical coefficient adjusting member. The optical waveguide connection assembly is fixed to the optical element via the connection member and the optical coefficient adjusting member.

Abstract: An optical waveguide element includes a substrate and an optical waveguide that is disposed on the substrate. The optical waveguide has an effective refractive index change portion in which an effective refractive index of the optical waveguide related to a fundamental mode A parallel to a plane of polarization of a light wave propagated through the optical waveguide changes according to propagation of the light wave. In the effective refractive index change portion, a cross-sectional shape of the optical waveguide which is perpendicular to a propagation direction of the light wave is set such that the effective refractive index of the optical waveguide related to the fundamental mode A is higher than an effective refractive index of the optical waveguide related to another fundamental mode B perpendicular to the fundamental mode A.

Abstract: A photovoltaic modulator utilizes free carriers generated by absorption of optical radiation passing through the modulator to achieve ultra-low energy modulation of the radiation. The photovoltaic modulator can also function as an electro-optic transducer for low-power, low-EMI, high-density sensing applications.

Abstract: An integrated photonics device that emits light out towards a measured sample value is disclosed. The device can include a discrete optical unit that attaches to a supporting layer. The discrete optical unit can include mirror(s), optics, detector array(s), and traces. The supporting layer can include one or more cavities having facet walls. Light emitter(s) can emit light that propagate through waveguide(s). The emitted light can exit the waveguide(s) (via termination point(s)), enter the one or more cavities at the facet walls, and be received by receiving facets of the discrete optical unit. The mirror(s) of the discrete optical unit can redirect the received light towards collimating optics, which can direct the light out of the device through the system interface. The discrete optical unit can be formed separately from the supporting layer or bonded to the supporting layer after the mirror, optics, detector arrays, and traces are formed.

Abstract: An optical device, having at least first and second light-transmitting substrates, each having at least two external surfaces and an input aperture and an output aperture. The external surface of the first light-transmitting substrate is optically cemented to an external surface of the second light-transmitting substrate by an optical adhesive defining an interface plane. The refractive index of the optical adhesive is substantially lower than the refractive index of the first substrate. Part of the light waves entering the device through the input aperture and exiting the device through the output aperture impinge on the interface plane of the first substrate having incidence angles smaller than the critical angle. Another part of the light waves impinging on the interface plane have incidence angles higher than the critical angle. The interface plane is substantially transparent for the light waves impinging on interface plane having incidence angles smaller than the critical angle.

Abstract: Embodiments are disclosed for generating an optical Pulse Amplitude Modulation 4-level (PAM-4) signal from bandwidth-limited duobinary electrical signals in a Mach-Zehnder modulator. An example system includes an MZM structure that comprises a first waveguide interferometer arm structure associated with a first semiconductor device and a second waveguide interferometer arm structure associated with a second semiconductor device. A polybinary electrical signal is applied to or between the first semiconductor device and the second semiconductor device to convert an input optical signal provided to the MZM structure into an optical PAM-4 signal.

Abstract: An optical waveguide device includes an intermediate layer, a thin-film LN layer including X-cut lithium niobate, and a buffer layer stacked on a substrate; an optical waveguide formed in the thin-film LN layer; and an electrode for driving. The intermediate layer is formed by an upper first intermediate layer and a lower second intermediate layer, the second intermediate layer having a permittivity that is smaller than a permittivity of the first intermediate layer.

Abstract: A device includes two or more waveguide portions that are adjacent to each other, and each of the two or more waveguide portions includes a first n-doped semiconductor structure and a p-doped semiconductor structure in contact with the first n-doped semiconductor structure at a bottom surface and two lateral walls on opposite ends of the first n-doped semiconductor structure. The device includes an undoped semiconductor structure in contact with each of the p-doped semiconductor structures and free of contact with each of the first n-doped semiconductor structures, and the undoped semiconductor structure includes an optical waveguide core embedded within the undoped semiconductor structure. The device includes a second n-doped semiconductor structure in contact with the undoped semiconductor structure and free of contact with each of the first n-doped semiconductor structures and the p-doped semiconductor structures.

Abstract: A microLED may be used to generate light for intra-chip or inter-chip communications. The microLED, or an active layer of the microLED, may be embedded in a waveguide. The waveguide may include a lens.

Abstract: The present disclosure relates to cable fixation devices for securing cables such as fiber optic cables to structures such as enclosures, panels, trays, frames or the like. The cable fixation devices can be configured to allow cables to be attached thereto while the fixation devices are disconnected from the structures. The fixation devices can be mounted in densely stacked configurations.

Abstract: A microlens array according to an embodiment of the present disclosure includes lens layers with a first side thereof having aspheric-surface shapes. The microlens array is configured such that an optical communication module may be miniaturized and integrated as a working distance (WD) is minimized to 1.30±0.05 mm, and collimating performance is excellent as a curvature radius (R1) of each lens layer is 1.1 to 1.5.

Abstract: A multi-fiber, fiber optic connector may include a reversible keying arrangement for determining the orientation for plugging the connector into an adapter to thereby allow for a change in polarity of the connection to be made on site. The connector housing may be configured to engage with a removable key that may be engaged with the housing in at least two different locations to provide the plug-in orientation, or the housing may have slidably displaceable keys movable between multiple positions on the housing.