Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned under the substrate such that the substrate is positioned between the conductive layer and the grounding structure. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.

Abstract: MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.

Abstract: A multilayer board includes a laminated insulating body, signal conductors inside the laminated insulating body and extending in a transmission direction, and ground conductors sandwiching each of the signal conductors in a lamination direction via the insulating base material layers. The multilayer board includes a parallel extending portion in which the signal conductors extend parallel and that includes signal conductors arranged separately from each other in a direction orthogonal to the transmission direction in a planar view in the lamination direction, and a signal conductor overlapping with the signal conductor in a planar view in the lamination direction and arranged separately from the signal conductor in the lamination direction. The parallel extending portion includes first and second regions arranged separately in a direction orthogonal to the transmission direction in a planar view in the lamination direction.

Abstract: A high-frequency module includes a module substrate including an internal wiring pattern, and a SAW filter including a piezoelectric substrate, an electrode pattern on the piezoelectric substrate, a support surrounding the electrode pattern, and a cover on the support covering the electrode pattern to define a hollow space together with the support and the piezoelectric substrate. The module substrate, the cover, and the piezoelectric substrate are disposed in this order in a perpendicular or substantially perpendicular direction with respect to the module substrate, and a shield electrode is provided on a surface of the cover that faces the module substrate or on a surface of the cover that faces the piezoelectric substrate.

Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.855 GHz to 5.925 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.330 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

Abstract: The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

Abstract: A crystal oscillator (101) includes: a piezoelectric resonator plate (2) on which a first excitation electrode and a second excitation electrode are formed; a first sealing member (3) covering the first excitation electrode of the piezoelectric resonator plate (2); a second sealing member (4) covering the second excitation electrode of the piezoelectric resonator plate (2); and an internal space (13) formed by bonding the first sealing member (3) to the piezoelectric resonator plate (2) and by bonding the second sealing member (4) to the piezoelectric resonator plate (2), so as to hermetically seal a vibrating part including the first excitation electrode and the second excitation electrode of the piezoelectric resonator plate (2). An electrode pattern (371) including a mounting pad for wire bonding is formed on an outer surface (first main surface (311)) of the first sealing member (3).

Abstract: A bulk acoustic wave filter comprises a substrate, an insulating layer disposed on the substrate and having a first cavity and a second cavity formed therein, a first bulk-acoustic-wave-resonance-structure disposed on the first cavity and a second bulk-acoustic-wave-resonance-structure disposed on the second cavity. The first bulk-acoustic-wave-resonance-structure comprises a first bottom electrode disposed on the first cavity, a first top electrode disposed on the first bottom electrode, a first piezoelectric layer portion sandwiched between the first top electrode and the first bottom electrode, and a first frequency tuning structure disposed between the first cavity and the first bottom electrode. The second bulk-acoustic-wave-resonance-structure comprises a second bottom electrode disposed on the second cavity, a second top electrode disposed on the second bottom electrode, a second piezoelectric layer portion sandwiched between the second top electrode and the second bottom electrode.

Abstract: The present invention relates to a surface acoustic wave device package and a method of manufacturing the same, and more specifically, to a method of manufacturing a miniaturized surface acoustic wave device package.

Abstract: Embodiments of the present application provide a wafer level surface acoustic wave filter and a package method, the surface acoustic wave filter includes a wafer, an electrode layer, a supporting wall and a cover plate; wherein, the wafer includes a substrate layer and a piezoelectric thin film layer combined together by wafer bonding, the electrode layer is arranged on a surface of the piezoelectric thin film layer, the supporting wall surrounds between the piezoelectric thin film layer and the cover plate to form a sealed cavity; and the cover plate includes at least a first material layer, which uses the same material as the substrate layer.

Abstract: An acoustic wave device includes a piezoelectric material substrate, an intermediate layer on the piezoelectric material substrate and composed of one or more materials selected from the group consisting of silicon oxide, aluminum nitride and sialon. A bonding layer is on the intermediate layer and is composed of one or more materials selected from the group consisting of tantalum pentoxide, niobium pentoxide, titanium oxide, mullite, alumina, and a high resistance silicon and hafnium oxide. A supporting body is composed of a polycrystalline ceramic and is bonded to the bonding layer by direct bonding, and an electrode is on the piezoelectric material substrate.

Abstract: An acoustic wave device includes a piezoelectric layer and first and second electrodes. The first and second electrodes face each other in a direction intersecting with a thickness direction of the piezoelectric layer. The acoustic wave device uses a bulk wave of a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. The piezoelectric layer is on a first main surface of the silicon substrate. The acoustic wave device further includes a trap region on a side of a second main surface of the piezoelectric layer.

Abstract: Certain aspects of the present disclosure provide an electroacoustic device and methods for signal processing via the electroacoustic device. One example electroacoustic device generally includes a first surface acoustic wave (SAW) resonator comprising a first apodized interdigital transducer (IDT) disposed between a first busbar and a second busbar, and a second SAW resonator comprising a second apodized IDT disposed between the second busbar and a third busbar, wherein the second busbar is at an angle with respect to at least one of the first busbar or the third busbar.

Abstract: A microstrip that is usable in a quantum application (q-microstrip) includes a ground plane, a polyimide film disposed over the ground plane at a first surface of the polyimide film, and a conductor formed on a second side of the polyimide film such that the first surface is substantially opposite to the second surface. A material of the conductor provides greater than a threshold thermal conductivity (TH) with a structure of a dilution fridge stage (stage).

Abstract: A stripline that is usable in a quantum application (q-stripline) includes a first polyimide film and a second polyimide film. The q-stripline further includes a first center conductor and a second center conductor formed between the first polyimide film and the second polyimide film. The q-stripline has a first pin configured through the second polyimide film to make electrical and thermal contact with the first center conductor.

Abstract: Harmonic suppression in bulk acoustic wave duplexer. In some embodiments, a filter circuit can include an input node and an output node, and a first assembly having one or more bulk acoustic wave (BAW) resonators implemented electrically between the input node and the output node, and configured to filter a signal. The filter circuit can further include a second assembly having one or more surface acoustic wave (SAW) resonators implemented electrically relative to the first assembly, and configured to suppress one or more harmonics resulting from the filtering of the signal by the first assembly.

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: An acoustic wave filter device includes a second filter section connected to a first filter section. The second filter section includes acoustic wave resonators in a ladder circuit configuration. Of the acoustic wave resonators in the first and second filter sections, the acoustic wave resonator having the smallest fractional bandwidth is included in the second filter section. In the second filter section, inductors are respectively connected between parallel arm resonators and a reference potential. Attenuation near a pass band in the second filter section is larger than attenuation near a pass band in the first filter section.

Abstract: A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be Z-cut LiNbO3 thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal, and the gap determines a time delay of the acoustic wave.