Abstract: A semiconductor processing device can include a reactor assembly comprising a reaction chamber sized to receive a substrate therein. An exhaust line can be in fluid communication with the reaction chamber, the exhaust line configured to transfer gas out of the reaction chamber. A valve can be disposed along the exhaust line to regulate the flow of the gas along the exhaust line. A control system can be configured to operate in an open loop control mode to control the operation of the valve.

Abstract: An atomic-layer-deposition equipment, includes a reaction chamber, a carrier, a coverage mechanism and a dispensing unit. The carrier and the dispensing unit are disposed within a containing space of the reaction chamber. The coverage mechanism includes a connecting shaft and a cover plate, wherein the cover plate is disposed within the containing space and faces the carrier, the connecting shaft is connected to the cover plate and extends through the reaction chamber. The carrier is configured to carry a substrate assembly and move the substrate assembly with respect to the coverage mechanism, so as to allow the cover plate contacting a top surface of the substrate assembly. When the cover plate contacts the top surface of the substrate assembly, the dispensing unit surrounds the substrate assembly and dispenses a precursor to a lateral surface of the substrate assembly, so as to form a protective layer thereon.

Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; a gas supplier configured to supply a gas into the process chamber; at least one substrate mounting table disposed in the process chamber and including a substrate mounting surface on which the substrate is mounted; and an arm configured to transfer the substrate to the substrate mounting surface while supporting a lower surface of the substrate, wherein the arm includes a support that includes an inclination and is configured to support the substrate.

Abstract: A gas introduction structure extends in a longitudinal direction of a processing container having a substantially cylindrical shape to supply gas into the processing container. The gas introduction structure includes an introduction section that partitions an introduction chamber, an ejection section that partitions a plurality of ejection chambers each including a plurality of gas holes through which the gas is ejected into the processing container, and a branch section that partitions a branch chamber connected to the introduction chamber. The branch chamber is branched to correspond to the number of ejection chambers in a tournament manner and connected to the ejection chambers.

Abstract: A semiconductor manufacturing device includes: a thin film formation portion that includes a chamber; and a supply gas unit that introduces a supply gas into the chamber. The supply gas unit includes: multiple supply pipes; a raw material flow rate controller that is installed on each of the multiple supply pipes, and controls a flow rate; a collective pipe that is connected to the multiple supply pipes, and generates a mixed gas; multiple distribution pipes connected to a downstream side of the collective pipe; a pressure controller that is installed on one distribution pipe, and adjusts a mixed gas pressure; and a distribution flow rate controller that is installed on a distribution pipe different from the distribution pipe provided with the pressure controller, and controls a flow rate of the mixed gas.

Abstract: The present invention relates generally to a plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction for deposition of thin film coatings and modification of surfaces. More particularly, the present invention relates to a plasma source comprising one or more plasma-generating electrodes, wherein a macro-particle reduction coating is deposited on at least a portion of the plasma-generating surfaces of the one or more electrodes to shield the plasma-generating surfaces of the electrodes from erosion by the produced plasma and to resist the formation of particulate matter, thus enhancing the performance and extending the service life of the plasma source.

Abstract: The invention relates to a coating lance for a plasma process, the lance comprising a plasma shaft, a plasma neck, and a plasma head, the plasma shaft comprising a longitudinal channel, which extends in an axial direction along an axis from a first shaft end to a second shaft end, the plasma neck comprising a shaft boss and a head boss and at least one neck channel, which extends from the shaft boss to the head boss, and the shaft boss being arranged on the second shaft end in such a way that the longitudinal channel leads into the at least one neck channel, the plasma head comprising a neck boss, a plasma opening, and at least one head channel, which extends from the neck boss to the plasma opening, and the neck boss of the plasma head being arranged on the head boss of the plasma neck in such a way that the at least one neck channel leads into the head channel.

Abstract: A method for coating fibers, includes desizing sized short fibers having an average length less than or equal to 5 mm, the short fibers being made of ceramic material or carbon, sieving the desized short fibers in order to separate them from any agglomerates of sized short fibers still present, introducing the desized and sieved short fibers into a reactor, and coating the short fibers in the reactor by chemical vapor deposition in a fluidized bed.

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.

Abstract: Coated nanofibers and methods for forming the same. A magnetic nanofiber is formed and a barrier coating is deposited on the magnetic nanofiber by atomic layer deposition (“ALD”) process. The coated nanofiber may include a reduced magnetic nanostructure and a barrier coating comprising a first oxide coating on the nanofiber, the coating being non-reactive with the magnetic polymer nanofiber, the barrier coating have a thickness of 2 nm to 12 nm.

Abstract: Embodiments of the present disclosure relate to a shadow frame support with one or more flow controllers and a method of controlling the flow of gases through the shadow frame support. The shadow frame support includes a body coupled to walls of a chamber such that a top surface of the shadow frame support is horizontally disposed in the chamber. The body has a plurality of channels disposed therethrough. Each channel includes a flow controller. The flow controller may be adjusted in real-time to change the open ratio of the flow controller.

Abstract: A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.

Abstract: A method of protecting a magnetic layer of a magnetic recording medium is provided to reduce the thickness of the magnetic spacing while improving corrosion resistance and tribological performance of the magnetic recording medium.

Abstract: A thin-film-deposition machine includes a chamber, a carrier, an extraction ring and a dispensing unit. The chamber includes a containing space and an extraction channel disposed around the containing space. The extraction channel is partitioned into a first, a second and a third channel areas. The carrier is disposed within the containing space. The first channel area is connected to the third channel area via the second channel area. The third channel area is formed with a height greater than that of the first channel area. The extraction ring includes a plurality of extraction holes and a ring channel. The extraction holes are disposed around the carrier for extracting gas from the containing space to the extraction channel, sequentially via the extraction holes, the ring channel. Thereby an even and steady flow field can be formed above the carrier and the thickness uniformity of film deposition can be improved.

Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, particularly, a gas supply device, for example, a shower head, by using a vortex tube. The cooling device may supply a cooling gas of a temperature lower than the temperature of the gas supply device heated to a high temperature, thereby easily controlling the temperature of the gas supply device.

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.

Abstract: A combination of a chemical vapour deposition (CVD) coater and at least one capacitive proximity sensor, comprising: a CVD coater, and at least one capacitive proximity sensor attached to the CVD coater, wherein the at least one capacitive proximity sensor is arranged to determine the distance between a glass substrate and the CVD coater.

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

Abstract: A tray for a vaporization vessel that includes a tray having a side wall, a bottom plate, one or more apertures that extend through the bottom plate, and a duct that extends through and from the bottom plate. The tray configured to support a solid reagent to be vaporized. A method of assembling the tray that includes forming a first tray that has the side wall and the bottom plate. A vaporization vessel that includes one or more of the trays.

Abstract: A method for manufacturing a glass article includes a heating step that heats a heating object made of glass. The heating step includes heating the heating object by converting, by a converter arranged between the heating object and a radiant heat source that radiates infrared light, a spectrum of the infrared light radiated from the radiant heat source and causing the heating object to absorb the infrared light radiated from the converter. The converter includes: an infrared light absorber that generates heat by absorbing the infrared light radiated from the radiant heat source; and an infrared light radiator made of a silicon-containing material. The infrared light radiator is heated through thermal conduction from the infrared light absorber. At least part of a surface of the converter facing the heating object includes at least part of a surface of the infrared light radiator.