Abstract: A film forming apparatus includes: a pressure-reducible processing container; a pressure gauge configured to detect a pressure in the processing container; and a controller, wherein the controller is configured to repeat a cycle including a step of adjusting a zero point of the pressure gauge and a step of executing a film forming process in the processing container until an ultimate pressure, which is detected by the pressure gauge when an interior of the processing container is evacuated to a highest reachable vacuum degree after the step of executing the film forming process, reaches a target range.

Abstract: A plasma processing method executed by a plasma processing apparatus in the present disclosure includes a first step and a second step. In the first step, the plasma processing apparatus forms a first film on the side walls of an opening in the processing target, the first film having different thicknesses along a spacing between pairs of side walls facing each other. In the second step, the plasma processing apparatus forms a second film by performing a film forming cycle once or more times after the first step, the second film having different thicknesses along the spacing between the pairs of side walls facing each other.

Abstract: The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

Abstract: A method for producing a frame-equipped vapor deposition mask sequentially includes preparing a vapor deposition mask including a metal mask having a slit and a resin mask having an opening corresponding to a pattern to be produced by vapor deposition at a position overlapping the slit, the metal mask and the resin mask being stacked, retaining a part of the vapor deposition mask by a retainer and stretching the vapor deposition mask retained by the retainer outward, and fixing the vapor deposition mask in a state of being stretched to a frame having a through hole. During stretching, any one or both adjustments of a rotating adjustment and a moving adjustment of the vapor deposition mask are performed with respect to the vapor deposition mask in the state of being stretched or with the vapor deposition mask being stretched.

Abstract: A substrate processing system includes a first power source configured to supply plasma having a first power level, a second power source configured to supply plasma having a second power level greater than the first power level, and a controller configured to dose a process chamber with precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of a substrate and is insufficient to decompose the precursor that is adsorbed. The controller is further configured to remove a portion of the precursor that does not adsorb onto the substrate from the process chamber while the plasma having the first power level is being supplied and activate the precursor that is adsorbed using plasma having the second power level while the plasma having the first power level is still being supplied. The second power level is sufficient to decompose the precursor that is adsorbed.

Abstract: A process for depositing on a surface of a substrate a layer based on a metal oxide doped with magnesium or a mixed metal oxide containing magnesium. The process includes providing a substrate having a surface, forming a gaseous mixture comprising a non-halogenated source of a metal and a source of magnesium, delivering the gaseous mixture to the surface of the substrate, and depositing the layer based on a metal oxide doped with magnesium or a mixed metal oxide containing magnesium on the surface of the substrate.

Abstract: A substrate holder 10 in the form of a mesh structure with a sample-receiving surface 10A is provided. The substrate holder 10 containing the samples 21 is at least partially folded and inserted into a substrate processing apparatus to produce coated samples 21A by directing at least one coating material P1, P2, . . . , Pn onto the samples through the mesh structure. A substrate processing system and a method for producing coated substrates are further provided.

Abstract: A wafer processing apparatus includes a reaction tube extending in a vertical direction, a door plate configured to load a boat into the reaction tube and positioned under the reaction tube to seal the reaction tube, the boat supporting a plurality of wafers thereon, a gas injector extending in the vertical direction along the boat within the reaction tube and including a plurality of ejection holes formed therein, a rotary mechanism configured to rotate the gas injector about its center axis to adjust an angle of the ejection hole toward the wafer, and a lift mechanism configured to move the gas injector upward and downward to adjust a height of the ejection hole on the wafer.

Abstract: A substrate holder according to one embodiment of the present disclosure comprises a stage made of a dielectric material and configured to support a substrate; an attraction electrode provided in the stage and configured to electrostatically attract the substrate; and a heater configured to heat the stage. By applying a DC voltage to the attraction electrode, the substrate is electrostatically attached to a surface of the stage by a Johnsen-Rahbek force. The stage comprises an annular close contact area with which the substrate comes into close contact at a position corresponding to an outer periphery of the substrate on the surface of the stage; and a groove provided in an annular shape in a portion outside the close contact area, and a conductive deposition film formed by the raw material gas is accumulated in the groove.

Abstract: A substrate processing apparatus for preventing adhesion of by-products to an inner surface of a furnace opening is disclosed. An apparatus is provided with: a process chamber, a substrate holder, a process gas supplier that supplies a process gas into the process chamber, a first heater that is installed outside the process chamber and heats an inside of the process chamber, a heat insulator that is installed between a lid of the process chamber and the substrate holder, a second heater that is installed near the substrate holder in the heat insulator and heats the inside of the process chamber, a third heater that is installed near an end closer to the lid in the process chamber and heats the end, and a supplier that supplies a purge gas to purge around the second and third heaters into the heat insulator.

Abstract: A film forming apparatus includes: process container to generate vacuum atmosphere; mounting part to mount substrate; heating part to heat the substrate mounted on the mounting part; gas supply part installed at rear side of the substrate mounted on the mounting part and configured to supply film forming gas toward front side of the substrate along surface of the substrate and flow rate of the film forming gas becomes uniform in width direction of flow of the film forming gas; rotation mechanism to rotate the mounting part about axis orthogonal to the substrate when the film forming gas is supplied to the substrate; film thickness adjustment part to adjust film thickness distribution of film on the substrate in flow direction of the film forming gas when viewed in state where the mounting part is stopped; and exhaust port provided at the front side of the substrate.

Abstract: A system includes a chamber, a support structure disposed in the chamber, and one or more heads. The support structure is configured to support and position a substrate. The one or more heads includes an energy source coupled to a near-field transducer for providing localized energy towards the support structure at select locations within the chamber.

Abstract: A chemical vapor deposition method comprises flowing a carrier liquid through a reactor. A fluid comprising one or more reactants is introduced into the carrier liquid. The fluid is at a first temperature and first pressure and is sufficiently immiscible in the carrier liquid so as to form a plurality of microreactors suspended in the carrier liquid. Each of the microreactors comprise a discrete volume of the fluid and have a surface boundary defined by an interface of the fluid with the carrier liquid. The fluid is heated and optionally pressurized to a second temperature and second pressure at which a chemical vapor deposition reaction occurs within the microreactors to form a plurality of chemical vapor deposition products. The plurality of chemical vapor deposition products are separated from the carrier liquid. A system for carrying out the method of the present disclosure is also taught.

Abstract: Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; a upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and an heating element disposed inside the annular member.

Abstract: A substrate processing apparatus includes a chamber, a susceptor provided in the chamber, a shower plate having a plate part provided with a plurality of through holes and formed of a conductor, a ring-shaped part connected to an outer edge of the plate part, surrounding the plate part and formed of a conductor and a lead wire embedded in the ring-shaped part and surrounding the plate part and the susceptor in plan view, the shower plate being provided so as to face the susceptor in the chamber, and a DC power supply that supplies a direct current to the lead wire.

Abstract: The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.

Abstract: An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a heater, a support unit, a hollow component, a bottom pumping port, and a shower head component, wherein the support unit is disposed on the top surface of the heater for supporting a substrate. There is an upper exhaust path formed between the hollow component and the support unit for exhausting process fluid such as precursors, so that the flow field of the process fluid in the atomic layer deposition process can be adjusted stably to make a uniform deposition on the substrate.

Abstract: The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

Abstract: A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.