Abstract: A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.

Abstract: A vacuum deposition facility is provided for continuously depositing on a running substrate coatings formed from metal alloys including a main element and at least one additional element. The facility includes a vacuum deposition chamber and a substrate running through the chamber. The facility also includes a vapor jet coater, an evaporation crucible for feeding the vapor jet coater with a vapor having the main element and the at least one additional element, a recharging furnace for feeding the evaporation crucible with the main element in molten state and maintaining a constant level of liquid in the evaporation crucible, and a feeding unit being fed with the at least one additional element in solid state for feeding the evaporation crucible with the at least one additional element either in molten state, in solid state or partially in solid state. A process is also provided.

Abstract: A linear evaporation apparatus, system and method including a conductance chamber including a linear output section configured to emit a linear source deposition flux therethrough, an evaporative vapor communication conduit including an evaporative vapor mixing chamber and a plurality of crucible-receiving apertures at distal ends from the evaporative vapor mixing chamber, wherein the evaporative vapor mixing chamber is in communication with the conductance chamber and configured to transmit the linear source deposition flux therethrough, and a plurality of crucibles, each of the plurality of crucibles corresponding to one of the plurality of crucible-receiving apertures at the distal ends from the evaporative vapor mixing chamber, each of the plurality of crucibles configured to hold a material and heat the material to a corresponding material evaporation temperature, each of the plurality of crucibles further including a vapor pressure activated lid configured to open at a predetermined material vapor press

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.

Abstract: A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

Abstract: A process for melting/sintering powder particles for layer-by-layer production of three-dimensional objects is performed by a) applying a layer of a powder material solidifiable under the action of electromagnetic radiation, b) heating the powder material to not more than 10 K below the melting point according to DIN 53765 by a radiation from a heat-radiating element whose maximum radiation intensity is at a wavelength of 5000 nm or at longer wavelengths, c) selective melting/sintering of at least a region of the powder material which corresponds to the cross section of the three-dimensional object, d) repeating steps a) to c) until the three-dimensional object is obtained.

Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.

Abstract: The present disclosure provides a gas injection system that can include a housing configured to hold a plurality of precursor cartridges comprising one or more precursor materials, and a nozzle extending from the housing, the nozzle having a tip configured for insertion into a sample chamber of a material processing apparatus. The precursor cartridges are fluidly connected to the nozzle to selectively deliver one or more precursor gasses to the sample chamber.

Abstract: A method of producing a film of carbon nitride material, including the steps of providing a precursor of the carbon nitride material in a reacting vessel and a substrate substantially above the precursor of the carbon nitride material; heating the reacting vessel, the precursor of the carbon nitride material and the substrate at the first predetermined temperature; and quenching the reacting vessel to reach the second predetermined temperature; wherein the film of carbon nitride material is formed on a surface of the substrate during the quenching of the reacting vessel.

Abstract: A system for chemical vapor densification includes a reaction chamber having an inlet and outlet; a trap; a conduit fluidly coupled between the outlet of the reaction chamber and the trap; a cryogenic cooler fluidly coupled to the trap though a frustoconical conduit; a first exit path from the cryogenic cooler that vents hydrogen gas to an exhaust; and a second exit path from the cryogenic cooler that recirculates silane and hydrocarbon-rich gas back to the inlet of the reaction chamber—and a related method places a substrate in the reaction chamber; establishes a sub-atmospheric pressure inert gas atmosphere within the reaction chamber; densifies the substrate by inputting virgin gas into the reaction chamber; withdraws effluent gas from the reaction chamber; extracts silane and hydrocarbon-rich gas from the effluent gas; and recirculates the silane and hydrocarbon-rich gas back to the reaction chamber.

Abstract: According to an embodiment of the present invention, a substrate processing apparatus includes: a chamber in which a process for a substrate is performed; a showerhead installed in the chamber to inject a reaction gas toward the substrate; and a susceptor installed below the showerhead to support the substrate. Here, the showerhead includes: a showerhead main body including an inner space to which the reaction gas is supplied from the outside and a plurality of injection holes configured to inject the reaction gas while communicating with the inner space; an inflow plate installed in the inner space to divide the inner space into an inflow space and a buffer space and including a plurality of inflow holes configured to allow the inflow space and the buffer space to communicate with each other; and a plurality of adjustment plates installed on the inflow holes in a movable manner, respectively, and configured to restrict movement of the reaction gas from the inflow space to the buffer space.

Abstract: The invention relates to a device for producing three-dimensional models in a continuous process, comprising a build surface which has a first end in the direction of movement and a second end in the direction of movement, at least one dosing device and at least one solidification unit, characterized in that the build surface is designed to transport heavy components, and the components are transportable over the build surface essentially without distortion, and also comprising a method therefor.

Abstract: A nozzle head and an apparatus for subjecting a surface of a substrate to successive surface reactions of at least two precursors according to the principles of atomic layer deposition, the nozzle head includes a nozzle head body, a nozzle head output face and gas channels for transporting gas. The nozzle head further includes a first through hole through at least two of the two or more nozzles and a first tube having a tube wall and being fitted into the first through hole, said first tube including gas conduits provided in the tube wall for providing a fluid communication between the first tube and the gas channels in connection with the two or more nozzles.

Abstract: A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. An as-grown diamond film on the substrate is also disclosed.

Abstract: A method of additive manufacturing of an object includes directing laser energy from a laser to a region for material deposition, extruding material using an extruder at the region of material deposition, sensing temperature within the region of the material deposition, and electronically controlling the laser energy using the temperature so as to sufficiently heat the region for material deposition prior to extruding the material to increase strength of the object.

Abstract: The present disclosure provides a method for fabricating a mixed-material 3D object, including forming, based on layer-print data of a target object, a layer-print product by one-by-one printing a plurality of pixels, using N0 types of main materials for the target object; forming a plurality of the layer-print products by repeatedly forming the layer-print product; and forming a mixed-material 3D object by stacking one of the layer-print products on another. Each of the plurality of pixels is printed by N1 types of the main materials and N2 types of auxiliary materials, N1?N0, and when N1<N0, N2?1, and each of the plurality of pixels is formed by ejecting a plurality of ink droplets.

Abstract: A print system and a method for curing marking material on an object using an active transparent display in a three dimensional (3D) object printer are disclosed. For example, the print system includes a plurality of printheads, a curing light source, a movable member to hold an object, an active transparent display and a controller to control movement of the movable member to move the object past the array of printheads, to operate the plurality of printheads to eject the marking material onto the object as the object passes the two-dimensional array of printheads, to control movement of the movable member, to control the active transparent display and to operate the curing light source to apply energy to cure the marking material, wherein the amount of energy that is applied to the object is controlled by a mask that is displayed on the active transparent display.

Abstract: A deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus has a processing chamber defining a processing space in which the substrate is arranged, an ultraviolet radiation assembly configured to emit ultraviolet radiation and a microwave radiation assembly configured to emit microwave radiation into an excitation space that can be the same as the processing space, and a gas feed assembly configured to feed a precursor gas into the processing space and a reactive gas into the excitation space. The ultraviolet radiation assembly and the microwave radiation assembly are operated in combination to excite the reactive gas in the excitation space. The material is deposited on the substrate from the reaction of the excited reactive gas and the precursor gas. A method for using the deposition apparatus to deposit a material on a substrate is provided.

Abstract: A particle deposition system can have a particle source providing a nanomaterial at a controlled rate and a gas distribution system coupled with the particle source and operable to receive the nanomaterial aerosol. A high pressure chamber can be coupled with the gas distribution system, and a nozzle can be disposed between the high pressure chamber and a low pressure chamber. The nozzle can have a nozzle opening allowing fluidic communication of a nanomaterial aerosol between the high pressure chamber and the low pressure chamber and the opening can have a length exceeding a width.

Abstract: An apparatus for manufacturing a display apparatus includes: a chamber; a head unit configured to supply a process gas and a cleaning gas to an inside of the chamber; which has a storage space where the process gas or the cleaning gas is temporarily stored, and including a nozzle connected to the storage space and configured to guide the process gas or the cleaning gas from the storage space to the inside of the chamber; a susceptor unit arranged to face the head unit and on which a substrate is placeable; a cleaning gas supply unit connected to the head unit and configured to plasmarize the cleaning gas and supply the cleaning gas that is plasmarized to the head unit; and a cleaning gas ejection unit connected to the cleaning gas supply unit and configured to supply the cleaning gas to at least two portions of the storage space.