Abstract: An emissive article includes an OLED having a light emission surface, a circular polarizer, and a light extraction film optically between the OLED and the circular polarizer and being optically coupled to the light emission surface. The light extraction film includes a two-dimensional structured layer of extraction elements having a first index of refraction and a pitch in a range from 400 to 800 nm and a backfill layer including a material having a second index of refraction different from the first index of refraction.

Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.

Abstract: A semiconductor device includes: a frame; a first-external-terminal provided to a first side portion of the frame; a first substrate enclosed in the frame and having a first-conductive-layer at an upper surface; a first-semiconductor-element: mounted on the first-conductive-layer; having, on a lower surface, a first main electrode connecting with the first-conductive-layer; and having a second main electrode and a control electrode on an upper surface; a first terminal connecting portion establishing a connection between the first-external-terminal and an exposed portion of the first-conductive-layer between the first-semiconductor-element and the first-external-terminal; a first-external-control-terminal provided above a wire in the frame and between the first main electrode of the first-semiconductor-element and the first-external-terminal; and a first control terminal connecting portion establishing a connection: between the control electrode of the first-semiconductor-element and the first-external-contro

Abstract: This invention provides a transistor device structure that incorporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.

Abstract: A light-emitting element, a bonding layer, and a frame-like partition are formed over a substrate. The partition is provided to surround the bonding layer and the light-emitting element, with a gap left between the partition and the bonding layer. A pair of substrates overlap with each other under a reduced-pressure atmosphere and then exposed to an air atmosphere or a pressurized atmosphere, whereby the reduced-pressure state of a space surrounded by the pair of substrates and the partition is maintained and atmospheric pressure is applied to the pair of substrates. Alternatively, a light-emitting element and a bonding layer are formed over a substrate. A pair of substrates overlap with each other, and then, pressure is applied to the bonding layer with the use of a member having a projection before or at the same time as curing of the bonding layer.

Abstract: In a method of manufacturing a high-electron mobility transistor (HEMT), a first Group III-V semiconductor layer is formed on a substrate. The first Group III-V semiconductor layer is patterned to form a fin and a recessed surface. A second Group III-V semiconductor layer is formed to cover a top surface and all side surfaces of the fin and the recessed surface. The second Group III-V semiconductor layer is formed by a plasma-enhanced atomic layer deposition, in which a plasma treatment is performed on every time an as-deposited mono-layer is formed.

Abstract: A user may pick, place, or move an item at an inventory location, such as a shelf. Described are techniques to determine a location of one or more of an object, such as an item or a user, with respect to an array of capacitive sensors. The array may be part of the shelf. As an item is added to, moved or removed from the shelf, when the user's hand is near the shelf, and so forth, capacitance measured by one or more of the sensors in the array may change. Based on these changes, a location relative to the sensor array may be determined. A particular shelf may have different areas, each designated as holding a different type of item. The location information obtained from the capacitive sensors may be used to determine which item on the shelf was interacted with.

Abstract: A display device includes: a substrate including a bending area located between a first region and a second region; an organic layer disposed over the substrate, an upper surface of the organic layer including an uneven surface in the bending area, the uneven surface including a plurality of protrusions; and a conductive layer extending from the first region to the second region across the bending area, the conductive layer being located over the organic layer and including a plurality of through holes.

Abstract: Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.

Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

Abstract: A diode string for a semiconductor circuit configured with a guard ring silicon-controlled rectifier (SCR) for electrostatic discharge (ESD) protection. The diode string includes multiple NPN transistor diode structures formed in an N-well structure and electrically coupled in series between a reference voltage node and an I/O pad. Each diode structure may include a P-type retro-well structure including at least one N+ doped region and at least one P+ doped region. The P+ guard ring includes at least one P+ doped structure formed in the N-well structure disposed on either side of the first diode structure and electrically coupled to the reference voltage node. The P+ guard ring forms the SCR with the first diode structure. The diode string is triggered in response to an ESD event, which activates the SCR, and the SCR clamps the I/O pad to the reference voltage node and handles the ESD current.

Abstract: A semiconductor device according to an embodiment includes a metal layer; an n-type first silicon carbide region; and a second silicon carbide region of metal containing at least one element selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt) and positioned between the metal layer and the first silicon carbide region.

Abstract: A light emitting device includes a light emitting element having a light emitting surface from which the light emitting element is configured to emit a first light having a first peak emission wavelength in a wavelength range of 380 nm or longer and 430 nm or shorter. A light transform layer is disposed on the light emitting surface of the light emitting element to transform the first light to a second light having a second peak wavelength longer than the first peak wavelength. A reflecting film is provided on the light transform layer to reflect the first light and to transmit the second light. The reflecting film has a reflectivity of 40% or more in a reflection spectrum of the reflecting film with respect to a light having a wavelength of 380 nm or longer and 430 nm or shorter and an angle of incidence from 0° to 85°.

Abstract: Embodiments relates to an ultraviolet light emitting diode, a method of manufacturing an ultraviolet light emitting diode, a light emitting diode package, and a LIGHTING DEVICE. An ultraviolet light emitting diode according to an embodiment includes: a substrate; a first undoped GaN layer including a planar upper surface and a V-pit on the substrate; a first nitride layer on the V-pit of the first undoped GaN layer; a first undoped AlGaN-based semiconductor layer on the first undoped GaN layer and the first nitride layer; and a second undoped GaN layer on the first undoped AlGaN-based semiconductor layer, wherein the first undoped AlGaN-based semiconductor layer includes a first region on the planar upper surface of the first undoped GaN layer and a second region located on the V-pit of of the first undoped GaN layer, and wherein an Al concentration of the first region may be greater than that of the second region.

Abstract: Ground shielding is achieved by a conductor shield having conductive surfaces that immediately surround individual chips within a multichip module or device, such as a multichip module or device with flip-chip (FC) bumps. Intra-module shielding between individual chips within the multichip module or device is achieved by electromagnetic or radio-signal (RF) isolation provided by the surfaces of the conductor shield immediately surrounding each of the chips. The conductor shield is directly connected to one or more grounded conductor portions of a substrate or interposer to ensure reliable grounding.

Abstract: At least one aspect of the present disclose is directed towards a temperature control device that includes a face plate, a housing, and an adjustment mechanism. The housing may protrude away from the rear side of the face plate. The housing may include a mounting mechanism that includes a set of clamps configured to engage at least a portion of an inner surface. The set of clamps may be adjustable based on alterations to the adjustment mechanism. The housing may also include one or more cavities that may be configured to receive at least a portion of the set of clamps when the set of clamps is collapsed into the housing.

Abstract: A method of forming a three-dimensional memory device includes forming an alternating stack of insulating layers and sacrificial material layers over a substrate, forming memory stack structures through the alternating stack, such that each of the memory stack structures includes a memory film and a vertical semiconductor channel, forming backside recesses by removing the sacrificial material layers selective to the insulating layers and the memory stack structures, forming a backside blocking dielectric layer in the backside recesses, forming an amorphous titanium oxide layer on surfaces of the backside blocking dielectric layer in the backside recesses, and forming tungsten word lines in the backside recesses using a fluorine-free tungsten-containing precursor gas.

Abstract: A crosslinkable quantum dot (QD) and a preparing method thereof, an array substrate made by using the crosslinkable quantum dot (QD) and a preparing method thereof are provided. The surface of the crosslinkable quantum dot has a pair of groups R1 and R2 capable of reacting to form a cross-linked network, or a group R3 capable of being cross-linked by a crosslinking agent to form a cross-linked network.

Abstract: Discussed herein is an organic light-emitting display (OLED) device that may include an organic light-emitting element layer disposed on a substrate; and an encapsulation layer covering the organic light-emitting element layer to block moisture and/or oxygen from permeating, wherein the encapsulation layer includes a barrier film having at least one transmittance adjusting layer that adjusts a ratio at which light emitted from the organic light-emitting element layer exits the OLED device, whereby the use of a polarizer is avoided.

Abstract: The present disclosure provides a method of forming a light-emitting device comprising: providing a growth substrate having a front side and a rear side; forming a sacrificial layer on the front side of the growth substrate; forming a protective structure on the sacrificial layer; forming a light-emitting structure on the protective structure, wherein the light-emitting structure emits a first peak wavelength; providing a carrier; joining the carrier and the light-emitting structure; and transforming the sacrificial layer by irradiating a laser beam from the rear side to separate the growth substrate from the light-emitting structure, wherein the laser beam emits a second peak wavelength, and wherein the protective structure reflects the second peak wavelength away from the light-emitting structure.