Patents Examined by Karla A. Moore
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Patent number: 11732349Abstract: A transport system of the in-line coater moves the substrate holder from chamber to chamber in a direction perpendicular to the axis of its rotation and in each process chamber. The system moves the substrate holder to the working area along its axis of rotation. The process chamber has a cavity the size of which is determined by the dimensions of the substrate holder and is sufficient to place technology devices and monitoring instruments in it. In the first embodiment of the in-line coater, the supporting frame of the transport system on which the substrate holder is cantilevered, is configured to move from the chamber to the chamber both in horizontal and vertical positions. In the second embodiment of the in-line coater the supporting frame is configured to move only in a vertical position, and the in-line coater comprises additionally a substrate holder return chamber.Type: GrantFiled: May 1, 2019Date of Patent: August 22, 2023Assignee: OOO IZOVAK TEHNOLOGIIInventors: Vladimir J. Shiripov, Yaughen A. Khakhlou, Sergei P. Maryshev
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Patent number: 11728139Abstract: A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.Type: GrantFiled: March 31, 2021Date of Patent: August 15, 2023Assignee: Applied Materials, Inc.Inventors: Toan Q. Tran, Soonam Park, Junghoon Kim, Dmitry Lubomirsky
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Patent number: 11728187Abstract: A system, method, and apparatus for heating and cooling a component in chamber enclosing a chamber volume. Vacuum and purge gas ports are in fluid communication with the chamber volume. A heater apparatus selectively heats the heated apparatus to a process temperature. A vacuum valve provides selective fluid communication between a vacuum source and the vacuum port. A purge gas valve provides selective fluid communication between a purge gas source for a purge gas and the purge gas port. A controller controls the heater apparatus, vacuum and purge gas valves and to selectively flow the purge gas to the chamber volume when an equipment-safe temperature is reached. When an operator-safe temperature is reached, access to the chamber volume through an access port by an operator is permitted.Type: GrantFiled: December 21, 2018Date of Patent: August 15, 2023Assignee: Axcelis Technologies, Inc.Inventors: John Baggett, Joseph Ferrara
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Patent number: 11705351Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.Type: GrantFiled: November 26, 2018Date of Patent: July 18, 2023Assignee: Elemental Scientific, Inc.Inventors: Tyler Yost, Daniel R. Wiederin, Beau Marth, Jared Kaser, Jonathan Hein, Jae Seok Lee, Jae Min Kim, Stephen H. Sudyka
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Patent number: 11699609Abstract: An apparatus for automatically cleaning a nozzle of a gas supply system is provided. The apparatus includes a carrier with a gas inlet that is adapted to sealingly mate with the nozzle of the gas supply system and an automated nozzle cleaning system in the carrier. The automated nozzle cleaning system includes a first nozzle cleaning device, a second nozzle cleaning device, and a function switching plate. The function switching plate comprises a plurality of through holes, a first through hole of the plurality of through holes is configured to engage the first nozzle cleaning device with the gas inlet when the function switching plate is positioned at a first position, and a second through hole of the plurality of through holes is configured to engage the second nozzle cleaning device with the gas inlet when the function switching plate is positioned at a second position.Type: GrantFiled: November 29, 2018Date of Patent: July 11, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Guan Jung Chen, Shi-Ming Wang, Chia-Hung Tsai, Yuan-Yu Feng
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Patent number: 11697878Abstract: A tow coating reactor system includes a reactor for receiving fiber tow, a wedge situated adjacent the reactor and configured to receive the tow at a tip end, such that as the tow moves across the wedge, the wedge spreads the tow into a plurality of sub-tows.Type: GrantFiled: February 8, 2021Date of Patent: July 11, 2023Assignee: Raytheon Technologies CorporationInventors: Ying She, John E. Holowczak
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Patent number: 11680322Abstract: A method for forming a film on a substrate by continuous vapor deposition includes: introducing the substrate into a film-forming apparatus; conveying the substrate into a pretreatment compartment of a pressure reduction chamber of the film-forming apparatus; performing plasma pretreatment of the substrate including supplying a plasma source gas composed of argon and at least one of oxygen, nitrogen, carbon dioxide gas and ethylene, introducing the plasma source gas that has been supplied as plasma into a gap between a magnet of the pretreatment compartment and a pretreatment roller such that the plasma is entrapped in the gap, and holding the plasma and applying a voltage between the pretreatment roller and a plasma-supply nozzle; conveying the substrate into a vapor deposition compartment of the pressure reduction chamber; and forming the film by vapor deposition on a surface of the substrate which has been pretreated.Type: GrantFiled: February 15, 2018Date of Patent: June 20, 2023Assignee: DAI NIPPON PRINTING CO., LTD.Inventors: Tatsuo Asuma, Shigeki Matsui, Teruhisa Komuro
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Patent number: 11655542Abstract: An atomic layer deposition system for depositing thin layers of material onto a common substrate includes a deposition head shaped to define a conical interior cavity into which a conical deposition drum is disposed. Together, the deposition head and the deposition drum define a narrow gap adapted to receive the common substrate, the spacing of the narrow gap being adjustable through acute axial displacement of the deposition head relative to the deposition drum. A pair of rollers advances the substrate through the gap in a first direction, as the deposition head rotates in the opposite direction at a precise rate. Each of the deposition head and deposition drum includes a plurality of separate fluid channels which enable gasses utilized in the deposition process to be delivered into and exhausted from the narrow gap, with the delivery of inert gas on both sides of the substrate effectively creating an air bearing.Type: GrantFiled: November 25, 2020Date of Patent: May 23, 2023Inventors: Daniel Beane, John S. Berg, Dimitur Benchev
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Patent number: 11639547Abstract: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.Type: GrantFiled: May 2, 2019Date of Patent: May 2, 2023Assignee: Applied Materials, Inc.Inventors: Prerna Goradia, Jennifer Y. Sun, Xiaowei Wu, Geetika Bajaj, Atul Chaudhari, Ankur Kadam
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Patent number: 11634809Abstract: An apparatus for coating a PET container in a coating chamber includes a lance that introduces material and energy into the container while it is in the coating chamber. This results in a reaction that coats the bottle's interior with a silicon oxide. Before reaching the coating chamber, the bottle will have passed through a cooling system connected to coating chamber. The cooling system passes cooled gas through a feed, thereby cooling said bottle before it reaches the coating chamber.Type: GrantFiled: August 1, 2017Date of Patent: April 25, 2023Assignee: KHS GmbHInventors: Sebastian Kytzia, Joachim Konrad
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Patent number: 11630392Abstract: In a chemical liquid container replacement device D2 configured to replace a chemical liquid container 50, multiple chemical liquid containers 50 respectively connected to base end sides of chemical liquid supply paths configured to supply chemical liquids, and a nozzle attachment/detachment device 61 is configured to attach/detach the base end side of the chemical liquid supply path with respect to the chemical liquid container 50 of a container arrangement section 60. A loading/unloading port 62 loads a new chemical liquid container 50 for performing a liquid process on a substrate W and unloads a completely used chemical liquid container 50. A container transfer device 7 unloads the completely used chemical liquid container 50 from the container arrangement section 60 toward the loading/unloading port 62 and loads the new chemical liquid containers 50 from the loading/unloading port 62 toward the container arrangement section 60.Type: GrantFiled: October 29, 2019Date of Patent: April 18, 2023Assignee: TOKYO ELECTRON LIMITEDInventor: Tsunenaga Nakashima
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Patent number: 11626313Abstract: The present disclosure relates to a semiconductor processing apparatus having a reaction chamber which can include a baseplate having an opening; a moveable substrate support configured to support a substrate; a movement element configured to move a substrate held on the substrate support towards the opening of the baseplate; a plurality of gas inlets positioned above and configured to direct gas downwardly towards the substrate support; and a sealing element configured to form a seal between the baseplate and the substrate support, the seal positioned at a greater radial distance from a center of the substrate support than an outer edge of the substrate support. In some embodiments, the sealing element can also include a plurality of apertures extend through the sealing element, the apertures configured to provide a flow path between a position below the sealing element to a position above the sealing element.Type: GrantFiled: December 18, 2020Date of Patent: April 11, 2023Assignee: ASM IP HOLDING B.V.Inventors: Carl Louis White, Kyle Fondurulia, John Kevin Shugrue
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Patent number: 11621176Abstract: In a substrate processing apparatus (1), an enlarged sealed space (100) is formed by bringing a cup part (161) that forms a lateral space (160) around the outer periphery of a chamber (12) into contact with a chamber lid part (122) separated from a chamber body (121). A scan nozzle (188) is attached to the cup part (161) in the lateral space (160) and supplies a chemical solution onto a substrate after moving to above the substrate through an annular opening (81). During processing for cleaning the substrate and processing for drying the substrate, the scan nozzle (188) is housed in the lateral space (160) and an upper opening of the chamber body (121) is closed by the chamber lid part (122) to isolate the chamber space (120) from the lateral space (160) and seal the chamber space (120). Thus, the chamber space (120) can be isolated from the scan nozzle (188). This consequently prevents a mist or the like of the chemical solution supplied from the scan nozzle (188) from adhering to the substrate.Type: GrantFiled: November 12, 2020Date of Patent: April 4, 2023Inventor: Yasuhiko Ohashi
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Patent number: 11605546Abstract: A substrate processing system includes a processing chamber. A pedestal is arranged in the processing chamber. An edge coupling ring is arranged adjacent to the pedestal and around a radially outer edge of the substrate. An actuator is configured to selectively move a first portion of the edge coupling ring relative to the substrate to alter an edge coupling profile of the edge coupling ring.Type: GrantFiled: January 16, 2015Date of Patent: March 14, 2023Assignee: Lam Research CorporationInventors: Jon McChesney, Alex Paterson
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Patent number: 11600472Abstract: There is provided a vacuum processing apparatus in which at least one of the processing units includes a lower member and an upper member mounted on the lower member to be attachable and detachable that configure the vacuum container, a turning shaft member which is attached to an outer circumferential part of the base plate between the work space and the vacuum container, and has a turning shaft that moves from above the base plate when the turning shaft is connected to the lower member and the lower member turns around the connected part, and a maintenance member including an arm which is disposed above the turning shaft member and turns in a horizontal direction as the upper member is suspended, and in which the lower member is configured to be fixable at the position at a predetermined angle within a range of an angle at which the lower member is capable of turning around the shaft, and to be vertically movable as the arm of the maintenance member fixes the position above a center portion of the lower memType: GrantFiled: February 22, 2018Date of Patent: March 7, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Ryoichi Isomura, Yuusaku Sakka, Kouhei Satou, Takashi Uemura, Satoshi Yamamoto, Hiromichi Kawasaki
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Patent number: 11600295Abstract: A vacuum process method for a magnetic recording medium having a surface protective layer for protecting a magnetic recording layer formed on a substrate includes a ta-C film forming step of forming a ta-C film on the magnetic recording layer, a transportation step of transporting a substrate on which the ta-C film is formed, a radical generation step of generating radicals by exciting a process gas, and a radical process step of irradiating a surface of the ta-C film with the radicals.Type: GrantFiled: April 18, 2016Date of Patent: March 7, 2023Assignee: CANON ANELVA CORPORATIONInventors: Hiroshi Yakushiji, Masahiro Shibamoto
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Patent number: 11574825Abstract: A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.Type: GrantFiled: September 30, 2019Date of Patent: February 7, 2023Assignee: Applied Materials, Inc.Inventors: Tuan Anh Nguyen, Amit Kumar Bansal, Juan Carlos Rocha-Alvarez
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Patent number: 11545343Abstract: A rotary plasma reactor system is provided. In another aspect, a plasma reactor is rotatable about a generally horizontal axis within a vacuum chamber. A further aspect employs a plasma reactor, a vacuum chamber, and an elongated electrode internally extending within a central area of the reactor. Yet another aspect employs a plasma reactor for use in activating, etching and/or coating tumbling workpiece material.Type: GrantFiled: January 15, 2020Date of Patent: January 3, 2023Assignee: Board of Trustees of Michigan State UniversityInventors: Qi Hua Fan, Martin E. Toomajian
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Patent number: 11542593Abstract: A system for depositing coating on a workpiece includes a deposition chamber within which is formed a vortex to at least partially surround a workpiece therein.Type: GrantFiled: July 2, 2020Date of Patent: January 3, 2023Assignee: Raytheon Technologies CorporationInventors: James W. Neal, Brian T. Hazel, David A. Litton, Eric Jorzik
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Patent number: 11538697Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.Type: GrantFiled: September 10, 2020Date of Patent: December 27, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Ki Nam, Jang-Yeob Lee, Sungyeol Kim, Sunghyup Kim, Soonam Park, Siqing Lu