Abstract: A semiconductor processing apparatus may include a processing part including a cavity, an insertion part configured to be inserted in the cavity, and a gas inlet coupled to the processing part and configured to supply a gas into the cavity. The insertion part may include a container and a gas ejection pipe facing the container.

Abstract: A substrate processing system installed on a floor face is provided. The substrate processing system includes a substrate transfer module, a supporting table including a top plate disposed separately from the floor face, a plurality of substrate processing modules disposed on the top plate and coupled to the substrate transfer module along a lateral side of the substrate transfer module, and a plurality of power units disposed below the top plate. Further, the plurality of power units correspond to the plurality of substrate processing modules, respectively, and each of the power units is configured to supply electric power to the corresponding processing module.

Abstract: A system and method are provided for implementing a unique scheme by which to execute digital vapor phase patterning on metals, semiconductor substrates and other surfaces using a proposed variable data digital lithographic image forming architecture or technique. For certain substrate printing and manufacturing applications, including some printed electronics applications, the disclosed schemes implement techniques to digitally pattern metal layers with bulk material properties in a manner that is aligned with underlying layers on the fly. The disclosed digital printing process may pattern a release oil on a substrate in support of a metal deposition process. Changeable patterning is implemented with an ability to modify the alignment of the patterns on-the-fly. The release layer on a drum is laser patterned in order that the patterned release layer is transferred to the substrate, or the patterning of the release layer is accomplished directly on the substrate.

Abstract: A substrate accommodating unit is disposed adjacent to each of consecutively arranged vacuum transfer units. The substrate accommodating unit includes a hollow housing having, on one sidewall in an arrangement direction of the vacuum transfer units, a loading/unloading port for loading/unloading a substrate into/from the adjacent vacuum transfer unit, a vertically movable partition member disposed in the housing, and a driving mechanism for vertically moving the partition member. When an inner space of the housing is divided horizontally into a first space on a loading/unloading port side and a second space on an opposite side of the loading/unloading port side, the partition member is vertically moved from a state where the first space and the second space communicate with each other to thereby airtightly separate the first space and the second space with the partition member.

Abstract: The present invention relates to a coating apparatus also called coating tunnel or coating hood for applying a protective coating to hollow glass containers. In particular it relates to a coating apparatus also called coating tunnel or coating hood with the re-use of the coating material containing exhaust from the end of the coating tunnel for applying the protective coatings to glass containers. More particularly the present invention relates to a coating apparatus also called coating tunnel or coating hood with an additional half-loop that re-uses the coating material containing exhaust from the end of the coating tunnel at the entrance of the tunnel while replacing fresh air.

Abstract: A substrate processing apparatus includes a first processing module including a first processing module, a second processing module, a first utility system adjacent to a back surface of the first processing module, and a second utility system adjacent to a back surface of the second processing module, a first exhaust box of the first utility system and a second exhaust box of the second utility system being disposed to face each other across a maintenance area located behind a part of the back surface of the first processing module that is close to the second processing module and behind a part of the back surface of the second processing module that is close to the first processing module, and a first supply box of the first utility system and a second supply box of the second utility system being disposed to face each other across the maintenance area.

Abstract: A particle coating device includes a container having a powder supply port that supplies a powder, a first rotation introducer provided below the powder supply port, a second rotation introducer provided below the first rotation introducer, a first magnet roller coupled with the first rotation introducer, a second magnet roller coupled with the second rotation introducer, a first drive unit that rotates the first magnet roller, a second drive unit that rotates the second magnet roller, a control unit that controls an operation of the first drive unit and an operation of the second drive unit, and a film forming unit that supplies a coating material for coating particles in the powder into the container. A product r1?12 of a rotation radius r1 and a square of a rotation speed ?1 per unit time of the first magnet roller is larger than a product r2?22 of a rotation radius r2 and a square of a rotation speed ?2 per unit time of the second magnet roller.

Abstract: A transfer path is provided which is extended so as to be passed on a lateral side of a processing portion that processes a substrate. The substrate transferred between a container held by a holding unit and the processing portion passes through the transfer path. A first transfer robot carries the substrate into and out of the container held by the holding unit, and accesses a reception/delivery region arranged within the transfer path. A second transfer robot receives and delivers the substrate from and to the first transfer robot in the reception/delivery region, and carries the substrate into and out of the processing portion. A second transfer robot raising/lowering unit which raises and lowers the second transfer robot is arranged within the transfer path. The reception/delivery region and the second transfer robot raising/lowering unit are located between the first transfer robot and the second transfer robot.

Abstract: A substrate processing apparatus includes a placing table configured to hold a substrate having a processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere; a processing chamber, configured to accommodate therein the substrate placed on the placing table, having therein the oxygen-containing atmosphere; and an ultraviolet ray irradiation device configured to irradiate the ultraviolet ray to the substrate within the processing chamber. Further, the placing table is provided with a surrounding member configured to surround the substrate placed on the placing table and restrict a gas introduction amount from an outside of the substrate toward above the substrate.

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Abstract: A substrate liquid processing apparatus includes a processing tub 34 which is configured to store therein a processing liquid and in which a processing of a substrate is performed by immersing the substrate in the stored processing liquid; a circulation line 50 connected to the processing tub; a pump 51 provided at the circulation line and configured to generate a flow of the processing liquid flowing out from the processing tub and returning back to the processing tub after passing through the circulation line; and a heater 52 provided at the circulation line and configured to heat the processing liquid. At least two temperature sensors 81 to 83 are provided at different positions within a circulation system including the processing tub and the circulation line. Controllers 90 and 100 control a heat generation amount of the heater based on detection temperatures of the at least two temperature sensors.

Abstract: The present application discloses an evaporation crucible including a crucible body and a plurality of nozzles connected to the crucible body. Each of the plurality of nozzles has an opening on a side distal to the crucible body. The plurality of nozzles include a first nozzle on a first edge of the plurality of nozzles. The first nozzle has a first height relative to a surface of the crucible body on a side proximal to the first edge greater than a second height relative to the surface of the crucible body on a side distal to the first edge.

Abstract: A semiconductor processing device includes a first etching chamber, a second etching chamber, and an etching module. The etching module is adapted to interchangeably contain the first etching chamber or the second etching chamber for wafer etching. A semiconductor process using the semiconductor processing device is also provided.

Abstract: The present invention relates to a dual-station vacuum processor that pumps uniformly, comprising two vacuum processing chambers that may act as a process processing chamber, and an offset-pumping port and a vacuum pump which are common to and communicate with the two vacuum processing chambers, wherein a damper having a set thickness in a vertical direction is provided in a region proximal to the offset-pumping port in each vacuum processing chamber, so as to lower a pumping rate of gas at the pumping port proximal end and balance the pumping rate with the pumping rate of the gas at the pumping port distal end, thereby ameliorating the impact of chamber offset on the uniformity process processing. The present invention may further provide, in a rib as the damper, a channel in communication with the atmospheric environment outside of the chamber, so as to facilitate connection between a cable pipeline in the chamber and the outside.

Abstract: The present invention relates to a reactor (1) for epitaxial deposition of semiconductor material on substrates (100), comprising: a reaction chamber (2) provided with a cavity (20) defined by a lower wall (21), an upper wall (22) and lateral walls (23, 24); a susceptor (3), positioned inside said cavity (20), and adapted to support and heat substrates (100) during epitaxial deposition; a heating system (6) adapted to heat said susceptor (3); an upper plate (7) that is positioned above said upper wall (22) and that overlies said susceptor (3) so that it reflects thermal radiation emitted by said susceptor (3) towards said susceptor (3). A liquid flow (LF) is provided in or on said upper plate (7) to cool said upper plate (7). A gaseous flow (GF) is provided between said upper wall (22) and said upper plate (7) to promote the transfer of heat from said upper wall (22) to said upper plate (7).

Abstract: An electrostatic chuck includes a chuck base having a first hole, an upper plate provided on the chuck base, the upper plate having a second hole aligned with the first hole, and an adhesive layer attaching the upper plate to the chuck base, the adhesive layer having a thickness that is less than a diameter of the first hole and equal to a diameter of the second hole.

Abstract: The invention provides an apparatus for treating surfaces of a container. The apparatus comprises an openable reaction chamber housing, an exhaust escapement and an electrode assembly. The electrode assembly comprises a probe assembly coupled with a power source, the probe assembly comprising an elongate wand body, and a helically configured primary electrode and a helically configured counter electrode disposed about an outer circumferential surface of the wand body in an alternating helical configuration. The elongate wand body has a fluid passageway defined therewithin, and one or more outlet openings that are formed on an outer circumferential surface of the wand body and that extend inward through said outer circumferential surface and upto the fluid passageway. One or both of the primary electrode and the counter electrode may be energizable by the power source.

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by providing a substrate having a plurality of protruding tin oxide features (mandrels) residing on an exposed etch stop layer. Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrel (e.g., leaving at least 50%, such as at least 90% of initial height at the sidewall). Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning the etch stop layer and underlying layers.

Abstract: A treatment apparatus includes two can rolls provided on a transfer path through which a long resin film is transferred in a roll-to-roll manner in a vacuum chamber; and surface treatment means facing an outer circumference of each of the can rolls to treat a surface of the long resin film cooled by being wound around the outer circumference. The downstream can roll is provided with upper and lower two sets of feeding and sending systems, and one surface of the long resin film in contact with the outer circumference of the downstream can roll at a time when the long resin film travels through the lower one of the two sets of feeding and sending systems is opposite to the other surface of the resin film in contact with the outer circumference of the downstream can roll at a time when the resin film travels through the upper one.

Abstract: An integrated electrohydrodynamic jet printing and spatial atomic layer deposition system for conducting nanofabrication includes an electrohydrodynamic jet printing station that includes an E-jet printing nozzle, a spatial atomic layer deposition station that includes a zoned ALD precursor gas distributor that discharges linear zone-separated first and second ALD precursor gases, a heatable substrate plate supported on a motion actuator controllable to move the substrate plate in three dimensions, and a conveyor on which the motion actuator is supported. The conveyor is operative to move the motion actuator between the electrohydrodynamic jet printing station and the spatial atomic layer deposition station so that the substrate plate is conveyable between a printing window of the E-jet printing nozzle and a deposition window of the zoned ALD precursor gas distributor, respectively. A method of conducting area-selective atomic layer deposition is also disclosed.