Abstract: The invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. The invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.

Abstract: An improved feeder system and method for continuous vapor transport deposition that includes at least two vaporizers couple to a common distributor through an improved seal for separately vaporizing and collecting at least any two vaporizable materials for deposition as a material layer on a substrate. Multiple vaporizer provide redundancy and allow for continuous deposition during vaporizer maintenance and repair.

Abstract: The invention relates to a method and a device for the coating of running substrates (25) moving along a run direction through a treatment zone (6), in which the vapor of a coating material is generated in a chamber (5), this vapor passing through a treatment aperture towards the treatment zone (6) where the coating material condenses on the surface of the substrates (25). The vapor flow through the treatment aperture is controlled by adjusting the extent to which the treatment aperture is shut off by at least one shutter (13), between an open position, in which said vapor flows through the treatment aperture towards the treatment zone (6), and a closed position, in which the vapor is prevented from flowing towards the treatment zone (6) through the treatment aperture.

Abstract: A film-forming apparatus forms a film by sequentially supplying a plurality of kinds of reaction gases to a substrate placed between a placing unit and a ceiling plate in a processing chamber having vacuum atmosphere and supplying a replacement gas between supply of one reaction gas and supply of next reaction gas. A central gas ejecting unit is disposed above the central portion of the substrate, and includes gas ejecting ports formed therein to spread the gases toward the outer side in the horizontal direction. A peripheral gas supply unit is disposed to surround the central gas ejecting unit. The peripheral gas supply unit includes a plurality of gas ejecting ports, which is formed in the circumferential direction such that the gases are spread in the horizontal direction toward the outer circumferential side and the central side of the substrate in a plan view.

Abstract: Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement.

Abstract: An evaporating device comprises a gas guiding element, an evaporating boat received in the gas guiding element to define a receiving space between the evaporation tray and the gas guiding element, and a gas channel. The evaporation tray comprises a bottom wall and two opposing first sidewalls and two opposing second sidewalls extending from the periphery of the first bottom wall. At least one of the first sidewalls and/or at least one of the second sidewalls defines a number of gas holes. The gas holes communicate with the receiving space. One end of the gas channel connects the gas guiding element and communicates with the receiving space to feed gas into the receiving space. A vacuum evaporation device using the evaporating device is also provided.

Abstract: A thin film deposition apparatus includes a vacuum chamber, a substrate supporter disposed in the vacuum chamber to support a target substrate on which a thin film is deposited, and a deposition source that evaporates a deposition material and supplies the evaporated deposition material to the target substrate. The deposition source includes a crucible that includes a deposition material-containing portion to accommodate the deposition material and a first flange at an upper end of the deposition material-containing portion, a spray nozzle that includes a spray portion through which the evaporated deposition material is sprayed and a second flange at a lower end of the spray portion to make contact with the first flange, and a cooling member attached to an outer surface of the first flange and the second flange.

Abstract: A plasma enhanced atomic layer deposition (PEALD) system used to form thin films on substrates includes a plasma chamber, a processing chamber, two or more ring units and a control piece. The plasma chamber includes an outer and an inner quartz tubular units, whose central axes are aligned with each other. Therefore, plasma is held and concentrated in an annular space formed between the outer and outer quartz tubular units. Due to the first and second through holes, the plasma flow may be more evenly distributed on most of the surface of the substrate to form evenly distributed thin films and nano particles on the substrate. In addition, due to the alignment and misalignment between the first and second through holes, the plasma generated in the plasma chamber may be swiftly allowed or disallowed to enter to the processing chamber to prevent the precursor from forming a CVD.

Abstract: A coil assembly includes an encapsulation structure having a coil placement region formed therein. One or more access ports are formed through the encapsulation structure to the coil placement region. The coil placement region is hermetically sealed by the encapsulation structure outside of the one or more access ports. A coil device is disposed within the coil placement region within the encapsulation structure. Terminals of the coil device are accessible through the one or more access ports formed through the encapsulation structure. The encapsulation structure is formed of a material suitable for exposure to a plasma. The coil assembly can be disposed inside of a plasma processing chamber and above a support structure, such that the coil assembly is in exposure to a plasma generated between the coil assembly and the support structure by radiofrequency power supplied to the coil device within the coil assembly.

Abstract: A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall is elliptical. An outer perimeter of the ring hole space is circular. The inlet ring wall is a continuous structure surrounding the ring hole space. An inlet baffle formed within the inlet ring wall surrounds at least 180 degrees of the outer perimeter of the ring hole space. An inlet plenum arranged in a first end of the inlet ring wall provides the gas to the ring hole space through the inlet baffle. An exhaust channel is formed within the inlet ring wall in a second end of the inlet ring wall. An exhaust outlet hole arranged in the second end of the inlet ring wall exhausts the gas out of the ring hole space via the exhaust channel.

Abstract: A low temperature deposition device according to the present invention includes: a thermal deposition source unit spraying a deposition beam; a differential pumping unit connected to the thermal deposition source unit and passing the deposition beam; and a cooling gas inlet connected to the differential pumping unit and inserting a cooling gas inside the differential pumping unit to cool the deposition beam. According to the present invention, the inorganic deposition beam of low temperature is deposited on the substrate to form the inorganic metal layer of low temperature so that the damage to the organic layer may be minimized when forming the inorganic metal layer of low temperature on the organic layer.

Abstract: A substrate treating apparatus includes a chamber that encloses an internal space; a susceptor in a lower part of the internal space; a shower head in an upper part of the internal space and spaced above the susceptor and that includes a plurality of distribution holes; and a blocker plate assembly that comprises a body having a plurality of intake holes that divides a space between a top wall of the chamber and the shower head into an upper intake space and a lower distribution space, a ring-shaped partition rib on an upper surface of the body, and a ring-shaped distribution unit on a lower surface of the body.

Abstract: A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

Abstract: Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer.

Abstract: A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.

Abstract: An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

Abstract: Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.

Abstract: A vapor deposition device has a plurality of moving plates between the cooling plate and moving vapor deposition source is controlled by the blowout panel. Moreover, when the vapor deposition materials absorbed by the blowout panel are up to the predetermined value, the moving plates are rotated around their axis simultaneously by the linkage to form a new blowout panel for performing the subsequent vapor deposition process. Consequently, the adsorption ability of the blowout board is greatly improved, and the crack and peeling off of the blowout panel caused by absorbing too many vapor deposition materials are avoided. Hence, the volume production of the evaporative coating equipment is improved.

Abstract: A deposition apparatus includes a deposition source unit that has a crucible heating a deposition material filled therein to vaporize the deposition material and a plurality of nozzles spraying the vaporized deposition material, a substrate disposed to face the nozzles, a blind plate disposed between the deposition source unit and the substrate and including a plurality of first openings to guide a traveling direction of the deposition material sprayed from the nozzles, a mask disposed between the substrate and the blind plate and including a plurality of second openings to provide a path through which the deposition material passing through the first openings of the blind plate is deposited on the substrate, and a heater unit that heats the blind plate at a predetermined temperature to vaporize the deposition material stacked up on the blind plate.

Abstract: There is provided a plasma processing apparatus that can generate uniform plasma without increasing costs per unit electric power even though the discharge area is increased to adapt to samples in given sizes by arranging a plurality of plasma discharge units. A plasma processing apparatus includes an RF power supply having an RF signal circuit and an RF power circuit, a case, and a discharge electrode. A plasma module is configured of the discharge electrode and the RF power circuit provided in the case. A frequency signal from the RF signal circuit is inputted to a plurality of the plasma modules connected in parallel with each other.