Patents Examined by Keath Chen
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Patent number: 8951350Abstract: An apparatus deposits a coating on a part. The apparatus comprises a chamber and a sting assembly for carrying the part. The sting assembly is shiftable between: an inserted condition where the sting assembly holds the part within the chamber for coating; and a retracted condition where the sting assembly holds the part outside of the chamber. The apparatus comprises a source of the coating material positioned to communicate the coating material to the part in the inserted condition. The apparatus comprises a thermal hood comprising a first member and a second member. The second member is between the first member and the part when the part is in the inserted condition. The second member is carried by the sting assembly so as to retract with the sting assembly as the sting assembly is retracted from the inserted condition to the retracted condition.Type: GrantFiled: May 3, 2011Date of Patent: February 10, 2015Assignee: United Technologies CorporationInventors: James W. Neal, Kevin W. Schlichting, Peter F. Gero
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Patent number: 8944002Abstract: An infinitely variable physical vapor deposition matrix system that allows the synthesis of multiple combinatorial catalyst samples at essentially the same time, by the co-deposition of multiple materials, or the sequential layer by layer deposition of multiple catalyst constituents, or both, such that the optimum mix of materials for a pre-determined application can be experimentally determined in subsequent testing. The discovery of optimal catalyst combinations for utilization in specified reactions and devices is facilitated. The high throughput system reduces the time and complexity of processing typically required to formulate and test combinatorial catalyst materials.Type: GrantFiled: January 14, 2004Date of Patent: February 3, 2015Assignee: Honda Motor Co., Ltd.Inventors: Ting He, Eric R. Kreidler, Tadashi Nomura
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Patent number: 8939108Abstract: A processing system for processing an object (3) is provided, wherein the processing system is adapted, to focus a first energy beam, in particular an electron beam (11), and a second energy beam, in particular an ion beam (21), on a focusing region (29) in which a object (3) to be processed is arrangeable. A processing chamber wall (35) having two openings (38, 39) for traversal of both energy beams and a connector (37) for supplying process gas delimits a processing chamber (45) from a vacuum chamber (2) of the processing system. Processing the object by activating the process gas through one of the energy beams and inspecting the object via one of the energy beams is enabled for different orientations of the object relative to a propagation direction of one of the energy beams.Type: GrantFiled: December 8, 2012Date of Patent: January 27, 2015Assignee: Carl Zeiss Microscopy GmbHInventors: Emmerich Bertagnolli, Heinz Wanzenboeck, Wolfram Buehler, Camille Stebler, Ulrike Zeile, Alexander Rosenthal
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Patent number: 8931433Abstract: The present invention aims at providing a plasma processing apparatus for performing a plasma processing on a planar substrate body to be processed, the apparatus being capable of generating the plasma with good uniformity and efficiently using the plasma, and having a high productivity. That is, the plasma processing apparatus according to the present invention includes: a vacuum chamber; one or plural antenna supporters (plasma generator supporters) projecting into the internal space of the vacuum chamber; radio-frequency antennas (plasma generators) attached to each antenna supporter; and a pair of substrate body holders provided across the antenna supporter in the vacuum chamber, for holding a planar substrate body to be processed.Type: GrantFiled: November 12, 2008Date of Patent: January 13, 2015Assignee: EMD CorporationInventors: Yuichi Setsuhara, Akinori Ebe, Eiji Ino, Shinichiro Ishihara, Hajime Ashida, Akira Watanabe
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Patent number: 8926755Abstract: A vapor deposition device using a lift-off process includes an evaporation source, a support frame mounted for rotation about a first axis that passes through the evaporation source, a central dome-shaped wafer holder mounted to the support frame wherein a centerpoint of the central dome-shaped wafer holder is aligned with the first axis, an orbital dome-shaped wafer holder mounted to the support frame in a position offset from the first axis and rotatable about a second axis that passes through a centerpoint of the orbital dome-shaped wafer holder and the evaporation source, and a plurality of wafer positions on the central dome-shaped wafer holder and the orbital dome-shaped wafer holder where each of the wafer positions are offset from the first axis and the second axis.Type: GrantFiled: April 22, 2010Date of Patent: January 6, 2015Assignee: Ferrotec (USA) CorporationInventors: Ping Chang, Gregg Wallace
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Patent number: 8920566Abstract: A pressure lock system passes a wire along a wire path from a wire source at a high pressure first region to a destination at a low pressure second region. The pressure lock system includes a pressure lock chamber. A first conduit has an interior positioned to pass the wire along the path and is mounted for rotation. A second conduit has an interior positioned to pass the wire from the pressure lock chamber and is also mounted for rotation. A motor may drive rotation of the first conduit and the second conduit. Pumps may maintain a pressure of the pressure lock chamber lower than a pressure of the first region.Type: GrantFiled: December 30, 2010Date of Patent: December 30, 2014Assignee: United Technologies CorporationInventors: Richard S. Mullin, Igor V. Belousov, Oleg G. Pankov, Igor V. Gulyayev
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Patent number: 8920596Abstract: In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.Type: GrantFiled: August 25, 2010Date of Patent: December 30, 2014Assignee: Tokyo Electron LimitedInventors: Naoki Mihara, Naoki Matsumoto, Jun Yoshikawa, Kazuo Murakami
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Patent number: 8911555Abstract: In a method for coating substrates with materials to be vaporized in a vacuum coating system, the vaporization material is deposited on the substrate by double vaporization using an intermediate carrier. The intermediate carrier is continuously moved and cylindrical.Type: GrantFiled: September 6, 2010Date of Patent: December 16, 2014Assignee: VON ARDENNE Anlagentechnik GmbHInventor: Harald Gross
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Patent number: 8888918Abstract: An apparatus for collecting condensed vapor during physical vapor deposition includes an enclosure configured to be placed adjacent to one or more vapor sources in a vacuum chamber. The enclosure includes an internal surface of the enclosure partially enclosing a volume of space configured to receive an object wherein the enclosure is maintained at a cooler temperature than the one or more vapor sources. The internal surface of the enclosure is coupled to one or more drainage gutters drainage drainage gutters.Type: GrantFiled: March 31, 2011Date of Patent: November 18, 2014Assignee: Seagate Technology LLCInventors: Qian Guo, Mark Smura, Michael Joseph Stirniman, Hamid Riahi Samani
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Patent number: 8882920Abstract: A thin film deposition apparatus to form a fine pattern on a large substrate. The thin film deposition apparatus includes a deposition source, a first nozzle that is disposed at a side of the deposition source and includes a plurality of first slits, a second nozzle that is disposed opposite to the deposition source and includes a plurality of second slits, and a second nozzle reinforcement unit that is disposed on the second nozzle and crosses the second nozzle.Type: GrantFiled: June 4, 2010Date of Patent: November 11, 2014Assignee: Samsung Display Co., Ltd.Inventors: Jung-Min Lee, Choong-Ho Lee
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Patent number: 8882921Abstract: A thin film deposition apparatus capable of forming a precise deposition pattern on a large substrate includes a deposition source; a first nozzle disposed at a side of the deposition source having a plurality of first slits; a second nozzle disposed opposite to the first nozzle having a plurality of second slits; and a second nozzle frame bound to the second nozzle so as to support the second nozzle. The second nozzle frame includes two first frame portions spaced apart from each other and disposed in a direction in which the plurality of second slits are arranged, and two second frame portions each connecting the two first frame portions to each other, wherein the second frame portions are curved in the direction in which the plurality of second slits are arranged, so as to form arches.Type: GrantFiled: June 7, 2010Date of Patent: November 11, 2014Assignee: Samsung Display Co., Ltd.Inventors: Choong-Ho Lee, Jung-Min Lee
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Patent number: 8882922Abstract: An organic layer deposition apparatus capable of reducing or minimizing shifting of a pattern, caused when a patterning slit sheet sags.Type: GrantFiled: September 24, 2011Date of Patent: November 11, 2014Assignee: Samsung Display Co., Ltd.Inventors: Hyun-Sook Park, Chang-Mog Jo, Yun-Mi Lee, Seok-Rak Chang
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Patent number: 8876974Abstract: A chemical vapor deposition apparatus is equipped to control the width of a gas discharge path between a susceptor and an inner surface of a chamber without having to resort to redesign and remanufacturing of the apparatus. The chemical vapor deposition apparatus includes: a chamber; a susceptor positioned inside the chamber and on which a substrate can be loaded; a shower head injecting a processing gas toward the substrate; and a guide unit detachably installed inside the chamber to guide the processing gas such that the processing gas injected from the shower head is discharged through a chamber hole formed in the chamber.Type: GrantFiled: July 26, 2010Date of Patent: November 4, 2014Assignee: LIGADP Co., Ltd.Inventor: Myung Woo Han
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Patent number: 8875656Abstract: A substrate processing apparatus includes a processing chamber in which a substrate is mounted, a gas supply unit that supplies processing gas into the processing chamber, a gas exhaust unit that exhausts atmospheric gas in the processing chamber, first and second electrodes to which high-frequency power is applied to set the processing gas to an active state. Each of the first and second electrodes includes a core wire formed of a metal and plural pipe bodies that are joined to one another through the core wire so as to be bendable, and less thermally deformed than the core wire.Type: GrantFiled: March 13, 2009Date of Patent: November 4, 2014Assignee: Hitachi Kokusai Electric Inc.Inventors: Tadashi Kontani, Tetsuo Yamamoto, Nobuhito Shima, Nobuo Ishimaru
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Patent number: 8871027Abstract: The present invention provides electrical contact assemblies can be used with vacuum deposition sources. In one exemplary application, the electrical contact assemblies of the present invention provide electrical contact to an arcuate or otherwise curved surface of a heating device used with a vacuum deposition source.Type: GrantFiled: December 7, 2012Date of Patent: October 28, 2014Assignee: Veeco Instruments Inc.Inventor: Scott Wayne Priddy
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Patent number: 8858714Abstract: An injector for a vacuum evaporation source includes an injection duct (1) having a longitudinal axis (11) and an inlet port (2) able to be connected to a vacuum evaporation source, and at least one nozzle (3) for diffusing a vaporized material, the nozzle (3) having a lateral face (4), and an upper face (5). The nozzle (3) includes a main channel (6) emerging outside the injection duct (1) and at least a lateral feeding channel (7) connecting the interior of the injection duct (1) to the main channel (6). The lateral feeding channel (7) has a lateral orifice (8) emerging inside the injection duct (1) through the lateral face (4) of the nozzle (3) for avoiding the clogging of the nozzle (3) by oxidized materials.Type: GrantFiled: January 6, 2011Date of Patent: October 14, 2014Assignee: RiberInventors: Jean-Louis Guyaux, Franck Stemmelen, Olivier Grange
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Patent number: 8852386Abstract: A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space.Type: GrantFiled: September 16, 2010Date of Patent: October 7, 2014Assignee: Tokyo Electron LimitedInventors: Hachishiro Iizuka, Yuki Mochizuki, Jun Abe
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Patent number: 8845807Abstract: A linear evaporation source and a deposition apparatus having the same are disclosed. In one embodiment, the linear evaporation source includes i) a crucible being open on one side thereof and configured to store a deposition material and ii) a plurality of partitions dividing an internal space of the crucible, wherein each of the partitions has at least one opening in a lower portion thereof. The source further includes i) a nozzle section located on the open side of the crucible and comprising a plurality of nozzles, ii) a heater configured to heat the crucible and iii) a housing configured to accommodate to the crucible, the nozzle section, and the heater.Type: GrantFiled: December 17, 2010Date of Patent: September 30, 2014Assignee: Samsung Display Co., Ltd.Inventors: Min-Gyu Seo, Sang-Jin Han, Cheol-Lae Roh, Jae-Hong Ahn
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Patent number: 8845808Abstract: A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), the vapor deposition device including a vapor deposition source (80) that has an injection hole (81) from which vapor deposition particles are injected, a vapor deposition particle crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80), and a rotation motor (86) for changing a distribution of the injection amount of the vapor deposition particles by rotating the vapor deposition source (80).Type: GrantFiled: December 19, 2011Date of Patent: September 30, 2014Assignee: Sharp Kabushiki KaishaInventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
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Patent number: 8815015Abstract: An apparatus and method for fabricating an organic light emitting diode display device are provided. The apparatus for fabricating an organic light emitting diode display device includes a chamber, a mask disposed in the chamber to mount a substrate on the upper surface thereof and having a certain pattern of openings, a deposition material source disposed under the mask and supplying a deposition material to the mask through the openings of the mask to form a layer on the substrate, and a holding unit pressing the substrate toward the mask. The holding unit includes a member that is capable of being deformed according to a deformed shape of the substrate such that the mask closely contacts the substrate.Type: GrantFiled: April 14, 2009Date of Patent: August 26, 2014Assignee: Samsung Display Co., Ltd.Inventor: Ikunori Kobayashi