Abstract: According to one embodiment, there is provided a laser ion source. The laser ion source includes a vacuum chamber which is vacuum-exhausted and in which a target is transported and set, a valve which is opened when the target is transported into the vacuum chamber and is closed except for the transportation, a target supply chamber which holds the target to be movable, and a transportation unit which transports to the vacuum chamber the target held on the target supply chamber while opening the valve after the target supply chamber is vacuum-exhausted while closing the valve.

Abstract: Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode (1) and the temperature of a gas injection port part (3) of a gas supply unit.

Abstract: An ion guide is disclosed wherein an axial DC voltage barrier is created at the exit of the ion guide. A primary RF voltage is applied to the electrodes in order to confine ions radially within the ion guide. A supplemental RF voltage is also applied to the electrodes. The supplemental RF voltage has a greater axial repeat length than that of the primary RF voltage. The amplitude of the supplemental RF voltage is increased with time causing ions to become unstable and gain sufficient axial kinetic energy such that the ions overcome the axial DC voltage barrier. Ions emerge axially from the ion guide in mass to charge ratio order.

Abstract: A multi-source computed tomography system has a first x-ray source and a second x-ray source that are respectively optimized for different imaging procedures and can be used simultaneously in the multi-source CT system. The first x-ray source can be optimized for higher power short-term operation and the second x-ray source can be optimized for lower power, longer term operation.

Abstract: A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. The evaporator section has a first wall associated with the heat source, the first wall having a wick for drawing a working fluid from a lower portion of the vapor chamber to the evaporator section. The condenser section coupled to a cooling element. The vapor chamber is configured to transfer heat from the heat source to the cooling element via continuous evaporation of the working fluid at the evaporator section and condensation of the working fluid at the condenser section. Other embodiments are disclosed and claimed.

Abstract: [PROBLEM] There is provided a broadband infrared light emitting device that radiates infrared light having a band broader than a conventional broadband infrared light emitting device.

Abstract: An ionization device includes: a holding portion configured to hold a sample; a probe configured to arrange a liquid on a surface of the sample to form a liquid bridge between the probe and the sample; an electrode configured to form, at the probe, a Taylor cone for ionizing a substance contained in the sample, and to release the ionized substance from the Taylor cone; a voltage applying unit configured to apply a voltage to the electrode; and a light source configured to emit laser light that irradiates the Taylor cone. A mass spectrometer including the ionization device, and an image display system including the mass spectrometer are also disclosed.

Abstract: A method of preparing a transmission electron microscopy (TEM) sample from a semiconductor structure may include milling a region of the semiconductor structure with a focused ion beam and generating the transmission electron microscopy (TEM) sample. The focused ion beam providing the milling may include a rotation angle relative to the crystallographic axis of the semiconductor structure. A transmission electron microscopy image of a cross-sectional plane of the generated transmission electron microscopy (TEM) sample may be generated using a transmission electron microscope, whereby the transmission electron microscopy image of the cross-sectional plane includes an image projection-free region based on the rotation angle.

Abstract: Electronic devices for the generation of electromagnetic radiation are provided. Also provided are methods for using the devices to generate electromagnetic radiation. The radiation sources include an anisotropic electrically conducting thin film that is characterized by a periodically varying charge carrier mobility in the plane of the film. The periodic variation in carrier mobility gives rise to a spatially varying electric field, which produces electromagnetic radiation as charged particles pass through the film.

Abstract: An LED light source device capable of making the amount of light of an emitting region a predetermined amount of light or more and uniformizing the amount of light is provided. The LED light source device 1 includes an ultraviolet LED array 3 including an LED juxtaposition region R in which LEDs 10 that emit ultraviolet light toward the front are juxtaposed, and a light transmitting member 4 provided on the front side of the LED juxtaposition region R of the ultraviolet LED array 3 so as to be opposed thereto, showing a rectangular parallelepiped outer shape, and formed of a material containing quartz. At a front surface 10a of the LED 10, an emitting surface S surrounded by a marginal portion 11 of a predetermined width H and for emitting the ultraviolet light is provided.

Abstract: An energy degrader includes: a damping unit that attenuates energy of incident charged particles and has a thickness changing stepwise or continuously according to a position of a two-dimensional coordinate system within a plane crossing a traveling direction of charged particles; and a driving unit that performs translational driving of the damping unit in first and second axial directions that are directions of two axes crossing each other in the two-dimensional coordinate system.

Abstract: An X-ray imaging system is provided with an X-ray source (11), first and second absorption gratings (31, 32), and a flat panel detector (FPD) (30), and obtains a phase contrast image of an object H by performing imaging while moving the second absorption grating (32) in x direction relative to the first absorption grating (31). The following mathematical expression is satisfied where p1? denotes a period of a first pattern image at a position of the second absorption grating (32), and p2? denotes a substantial grating pitch of the second absorption grating (32), and DX denotes a dimension, in the x-direction, of an X-ray imaging area of each pixel of the FPD (30). Here, “n” denotes a positive integer.

Abstract: A method for ionizing, using pulses of ionization radiation, an analyte to be examined by way of ion mobility spectrometry using a pulse sequence is modulated with a known time-variable impression pattern is provided. An ionization device for carrying out the method and an ion mobility spectrometry method and an ion mobility spectrometry device that use the ionization method and/or the ionization device are also provided.

Abstract: A conductive substrate (18) and an etching substrate (20) are bonded to each other. An etch mask (25) is formed on the etching substrate (20) using a photolithography technique. On the etching substrate (20), grooves (20a) and X-ray transmitting sections (14b) are formed by dry etching using Bosch process. The grooves (20a) are filled with Au (27) by an electroplating method using the conductive substrate (18) as an electrode. Thus, X-ray absorbing sections (14a) are formed.

Abstract: One embodiment relates to a high-voltage electron gun including an insulator stand-off having a resistive layer. The resistive layer is at least on an interior surface of the insulator stand-off. A cathode holder is coupled to one end of the insulator 115 stand-off, and an anode is coupled to the other end. The resistive layer advantageously increases the surface breakdown field strength for the insulator stand-off and so enables a compact design for the high-voltage electron gun. Other embodiments, aspects and feature are also disclosed.

Abstract: A process is provided for the removal of defects, for example, micro-bridging defects during device fabrication. In one aspect, a method includes: obtaining a wafer after lithography processing and exposing the wafer to at least one electron beam. In another aspect, a system includes: selecting a substrate with micro-bridging defects after the substrate undergoes lithography processing; preparing the substrate for exposure to at least one electron beam; and exposing the substrate to the at least one electron beam.

Abstract: A septum magnet includes a yoke that can be separated at the approximately center portion thereof in the axis direction; a septum coil; a return coil; and a vacuum duct that is inserted between the septum coil and the return coil. The septum coil is formed in such a way as to be able to be separated into a first portion and a second portion in response to separation of the yoke; and in a space between the septum coil and the vacuum duct, there is provided an auxiliary coil, in two portions of which, corresponding to the first portion and the second portion of the septum coil, electric currents flow in opposite direction to each other in a circumferential direction.

Abstract: The invention relates to a device for conducting near-field optical measurements of a specimen, a method for conducting near-field optical measurements and the use of the device.

Abstract: Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode (1) and the temperature of a gas injection port part (3) of a gas supply unit.

Abstract: An ionization cell for a mass spectrometer (2) includes: an ionization housing (10) having a first and a second electron input groove (11, 26) and one side (16) of which has an output groove (15) for passing ionized particles (14a, 14b, 14c) therethrough, a first working filament (13) placed opposite the first electron input groove (11) and intended to be supplied to produce an electron beam (12), and a second backup filament (22) placed opposite the second electron input groove (26) and intended to be supplied in the event the first working filament (13) fails so as to produce the electron beam, the input groove (26) being placed outside a front region (F) located opposite the first input groove (11). The invention also relates to a leak detector with a mass spectrometer, which includes such an above-described ionization cell.