Abstract: A memory includes multiple non-volatile memory devices, each having multiple nonvolatile memory cells. A write controller is configured to stream bits to the memory devices using a write data channel that optimizes a speed of writing to the memory devices to provide writes at a first speed. A read controller is configured to read bits from the memory devices, at a second speed slower than the first speed, using a read channel. A bi-directional bus that both the write controller and the self-referenced read controller share to access the plurality of non-volatile memory devices.

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A memory device may maintain a digit line voltage at a ground reference for a duration associated with biasing a ferroelectric capacitor of a memory cell. For example, a digit line that is in electronic communication with a ferroelectric capacitor may be virtually grounded while a voltage is applied to a plate of the ferroelectric capacitor, and the ferroelectric capacitor may be isolated from the virtual ground after a threshold associated with applying the voltage to the plate is reached. A switching component (e.g., a transistor) that is in electronic communication with the digit line and virtual ground may be activated to virtually ground the digit line and deactivated to isolate the digit line from virtual ground.

Abstract: A semiconductor memory device includes a memory cell includes a charge storage layer, a word line that is connected to a gate of the memory cell, and a controller that performs a write operation on the memory cell by applying a write voltage to the word line, and a verify operation to verify a threshold voltage of the memory cell after the write operation. The verify operation includes a first verify operation using a first verify voltage, and a second verify operation using a second verify voltage higher than the first verify voltage.

Abstract: A word-line enable pulse generator for a SRAM is provided. A delay unit receives an enable signal to provide an intermediate signal. A first inverter receives the intermediate signal to provide a word-line enable pulse signal to a plurality of word line drivers of the SRAM. The delay unit includes a first transistor coupled between an input terminal of the first inverter and a first power source, a resistor coupled between the input terminal of the first inverter and a second power source that is different from the first power source, and a second transistor coupled between the input terminal of the first inverter and the resistor. The first transistor and the second transistor form a second inverter. A specific edge of the word-line enable pulse signal is delayed from the specific edge of the enable signal by a delay time corresponding to resistance of the resistor.

Abstract: A computer architecture employs multiple intercommunicating tiles each holding an array of memory elements. Programmable decoding circuitry allows these memory elements to be used as local memories (including content addressable memories or random access memories), logic elements or interconnect elements. The ability to dynamically change the function of any of these tiles allows tight integration of memory and logic tailored to particular calculation problems reducing costs in data transfer.

Abstract: A data storage device including a flash memory and a controller. The flash memory has a plurality of single-level-cell units and a plurality of triple-level cell units. The controller performs a first predetermined number of read processes on a second predetermined number of specific single-level-cell units to program data stored in the second predetermined number of specific single-level-cell units into a specific triple-level cell unit of the triple-level cell units and determines whether any of the second predetermined number of specific single-level-cell units has not been read successfully by any of the read processes when the specific triple-level cell unit cannot be read successfully.

Abstract: A voltage control circuit for a memory cell having a floating gate transistor and a capacitive device, comprising a first input terminal, a second input terminal, a first output terminal and a second input terminal, wherein the first input terminal is configured to receive a power supply voltage, the second input terminal is configured to receive a ground reference, and wherein based on the power supply voltage and the ground reference, the first output terminal and the second output terminal respectively provides a first voltage signal and a second voltage signal, and wherein a voltage value of the first voltage signal is twice the power supply voltage, and a maximum of a voltage difference between the first voltage signal and the second voltage signal is three times the power supply voltage.

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. Prior to writing a logic value to a ferroelectric memory cell, a digit line of a ferroelectric memory cell may be biased to a first voltage, and a cell plate of the ferroelectric memory cell may be biased to a second voltage. A magnitude of a difference between the first voltage and the second voltage may be greater than a magnitude of a write voltage for the first ferroelectric memory cell. The magnitude of the difference between the first voltage and the second voltage may decrease the time to reach a write voltage for the ferroelectric memory cell. Several example cell plate drivers are also disclosed.

Abstract: An electrical fuse (eFuse) array includes eFuse cells arranged in multiple rows and columns. Each eFuse cell has an eFuse, a first diode, and a second diode coupled to an internal node, each eFuse cell further having first, second, and third terminals coupled, respectively, to the first diode, the second diode, and the eFuse. The eFuse array further includes a shared NMOSFET for each of the multiple rows, with a drain coupled to the third terminal of each of the plurality of eFuse cells in that row and a gate coupled to a word line. Each column includes a write bit line coupled to the second terminal of each of the eFuse cells in that column, and a read bit line coupled to the first terminal of the eFuse cell.

Abstract: Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations.

Abstract: A method of manufacture of the memory management system includes: fabricating a dual in-line memory module carrier; mounting a volatile memory device on the dual in-line memory module carrier; mounting a non-volatile memory on the dual in-line memory module carrier on a side opposite the volatile memory device; mounting an uninterruptible power supply on the dual in-line memory module carrier for maintaining a memory module power when a system power input decays; and mounting a controller logic integrated circuit on the dual in-line memory module carrier coupled to the volatile memory device, the non-volatile memory, and the uninterruptible power supply for copying data content of the volatile memory device to the non-volatile memory when the uninterruptible power supply detects the decay of the system power input to a first cross-over level.

Abstract: A memory device in which the number of films is reduced. The memory device includes a circuit and a wiring. The circuit includes a first memory cell and a second memory cell. The first memory cell includes a first transistor, a second transistor, and a first capacitor. The second memory cell includes a third transistor, a fourth transistor, and a second capacitor. The second memory cell is stacked over the first memory cell. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor and the first capacitor. One of a source and a drain of the third transistor is electrically connected to a gate of the fourth transistor and the second capacitor. A gate of the first transistor and a gate of the third transistor are electrically connected to the wiring.

Abstract: A semiconductor device includes an internal signal processing block suitable for generating an internal enable signal and an internal control signal that correspond to an external enable signal and an external control signal, and a monitoring unit suitable for outputting a monitoring signal that corresponds to a predetermined internal signal, based on the internal enable signal and the internal control signal, in an initial operation period.

Abstract: A semiconductor integrated circuit which can respond to changes of the amount of retained data at the time of standby is provided. The semiconductor integrated circuit comprises a logic circuit (logic) and plural SRAM modules. The plural SRAM modules perform power control independently of the logic circuit, and an independent power control is performed among the plural SRAM modules. Specifically, one terminal and the other terminal of a potential control circuit of each SRAM module are coupled to a cell array and a local power line, respectively. The local power line of one SRAM module and the local power line of the other SRAM module share a shared local power line. A power switch of one SRAM module and a power switch of the other SRAM module are coupled in common to the shared local power line.

Abstract: A fast and lean way of performing logical-to-physical address translation is presented. A logical address is divided into a most significant bits portion and a least significant bits portion. Instead of using the entire logical address to locate an entry in an address translation table, only the most significant bits portion of the logical address is used, which substantially reduces the size of the address translation table. The entry includes a most significant bits portion of a physical volatile memory address and a most significant bits portion of a physical non-volatile memory address. The actual physical volatile memory address and the actual physical non-volatile memory address can be derived by combining the most significant bits portions of the addresses stored in the address translation table entry with the least significant bits portion of the logical address.

Abstract: Described are apparatuses, methods and storage media associated with performing deflate decompression using multiple parallel content addressable memory cells.

Abstract: Examples of the present disclosure provide apparatuses and methods for vertical bit vector shift in a memory. An example method comprises storing a vertical bit vector of data in a memory array, wherein the vertical bit vector is stored in memory cells coupled to a sense line and a plurality of access lines and the vertical bit vector is separated by at least one sense line from a neighboring vertical bit vector; and performing, using sensing circuitry, a vertical bit vector shift of a number of elements of the vertical bit vector.

Abstract: A memory device which can be configured as a 3D NAND flash memory, includes a plurality of stacks of conductive strips, including even stacks and odd stacks having sidewalls. Some of the conductive strips in the stacks are configured as word lines. Data storage structures are disposed on the sidewalls of the even and odd stacks. Active pillars between corresponding even and odd stacks of conductive strips include even and odd semiconductor films having outside surfaces and inside surfaces, the outside surfaces disposed on the data storage structures on the sidewalls of the corresponding even and odd stacks in the plurality of stacks forming a 3D array of memory cells, the inside surfaces are separated by an insulating structure that can include a gap. The semiconductor films can be thin-films.

Abstract: A compute memory system can include a memory array and a controller that generates N-ary weighted (e.g., binary weighted) access pulses for a set of word lines during a single read operation. This multi-row read generates a charge on a bit line representing a word stored in a column of the memory array. The compute memory system further includes an embedded analog signal processor stage through which voltages from bit lines can be processed in the analog domain. Data is written into the memory array in a manner that stores words in columns instead of the traditional row configuration.

Abstract: A content addressable memory system, method and computer program product is described. The memory system comprises a location addressable store having data identified by location and multiple levels of content addressable stores each holding ternary content words. The content words are associated with references to data in the location addressable store and the content words containing at least one next entry bit for sorting content words in a physical ordered sequence to create content ordered memory. The content store levels might be implemented using different technologies that have different performance, capacity, and cost attributes. The memory system includes a content based cache for improved performance and a content addressable memory management unit for managing memory access operations and virtual memory addressing.