Abstract: A three-dimensional dye, a manufacturing method of the three-dimensional dye, and a photoresist mixture are disclosed. A non-planar three-dimensional dye molecular structure is constructed by adding a three-dimensional structure group into a dye molecule, thereby breaking the strong attraction force between the planar conjugation of the dye molecule. Aggregation of dye molecules are prevented, influence of dye molecules on optical paths is eliminated, and thus optical properties and color rendering properties of color filters made by a photoresist liquid are improved.

Abstract: An imprinting photomask including: a transparent substrate; a light blocking pattern provided on the transparent substrate; and a dry film resist (DFR) pattern provided on the light blocking pattern.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a repeating unit having a group in which a phenolic hydroxyl group is protected with an acid-leaving group; a first photoacid generator that generates an acid having a pKa of ?2.00 to 2.00, in which in a case where the acid thus generated is a carboxylic acid, a pKa of the carboxylic acid is ?2.00 or more and less than 1.00; and a second photoacid generator that generates a carboxylic acid having a pKa of 1.00 or more.

Abstract: A molecular resist composition is provided comprising (A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a phenyl group substituted with an optionally heteroatom-containing monovalent hydrocarbon group, the phenyl group being attached to the sulfur atom, and (B) an organic solvent, the resist composition being free of a base resin. When processed by lithography using KrF, ArF excimer laser, EB or EUV, the resist composition is improved in dissolution contrast, EL, MEF, and LWR.

Abstract: A compound represented by Formula (1). [In the formula, X represents a halogen atom or an alkoxy group, R1 represents any one group selected from an alkyl group having 1 to 5 carbon atoms, a group represented by Formula (R2-1), and a group represented by Formula (R2-2), R2 represents a group represented by Formula (R2-1) or (R2-2), n0 represents an integer of 0 or greater, n1 represents an integer of 0 to 5, and n2 represents a natural number of 1 to 5.

Abstract: Provided are a curable composition including a compound represented by Formula (1) or Formula (2), a curable compound, and a solvent; a film formed of the curable composition; a near-infrared cut filter; a solid-state imaging element; an image display device; an infrared sensor; and a camera module. In the formulae, X1 to X5 each independently represent O, S, or a dicyanomethylene group, and R1 to R5 each independently represent a group represented by Formula (R2), and the like, in which at least one of R1 or R2 is the group represented by Formula (R2) and at least one of R3 or R4 is the group represented by Formula (R2).

Abstract: A method of making photolithography mask plate is provided. The method includes: providing a carbon nanotube layer on a substrate; depositing a chrome layer on the carbon nanotube layer, wherein the chrome layer includes a first patterned chrome layer and a second patterned chrome layer, the first patterned chrome layer is located on the carbon nanotube layer, and the second patterned chrome layer is deposited on the substrate corresponding to holes of the carbon nanotube layer; transferring the carbon nanotube layer with the first patterned chrome layer thereon from the substrate to a base, and the carbon nanotube layer being in contact with the base; and depositing a cover layer on the first patterned chrome layer.

Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: Disclosed herein is a pattern formation method, comprising (a) applying a layer of a photoresist composition over a semiconductor substrate, (b) pattern-wise exposing the photoresist composition layer to i-line radiation; and (c) developing the exposed photoresist composition layer to provide a resist relief image; wherein the photoresist composition comprises a non-ionic photoacid generator; a solvent; a first polymer and a second polymer; and wherein the first polymer comprises a polymeric dye.

Abstract: A hardmask composition and a method of forming patterns using the hardmask composition, the composition including a polymer including a moiety derived from a compound represented by Chemical Formula 1; and a solvent:

Abstract: A composition for forming a silicon-containing resist underlayer film contains a compound shown by the following general formula (A-1) and a thermally crosslinkable polysiloxane. R1 represents a methyl group, an ethyl group, a propyl group, an allyl group, or a propargyl group. R2 represents a hydrogen atom, an acetyl group, an acryloyl group, a methacryloyl group, a benzoyl group, a naphthoyl group, or an anthranoyl group. R3 represents a methyl group, an ethyl group, a propyl group, an allyl group, a propargyl group, or a group shown by the following general formula (A-2), where a broken line represents a bonding arm, and R1 and R2 are as defined above. An object of the present invention is to provide a silicon-containing resist underlayer film capable of exhibiting high effect of suppressing ultrafine pattern collapse and forming a resist pattern with favorable pattern profile in multilayer resist methods.

Abstract: There is provided a manufacturing method for a cured substance, which makes it possible to obtain a cured substance having excellent breaking elongation, a manufacturing method for a laminate, including the manufacturing method for a cured substance, a manufacturing method for a semiconductor device, including the manufacturing method for a cured substance or the manufacturing method for a laminate, and there is provided a treatment liquid that is used in the manufacturing method for a cured substance. The manufacturing method for a cured substance includes a film forming step of applying a resin composition containing a precursor of a cyclization resin onto a base material to form a film, a treatment step of bringing a treatment liquid into contact with the film, and a heating step of heating the film after the treatment step, in which the treatment liquid contains at least one compound selected from the group consisting of a basic compound having an amide group and a base generator having an amide group.

Abstract: Provided is a copolymer that can be favorably used as a main chain scission-type positive resist that has excellent heat resistance and that can form a resist pattern having excellent resolution and clarity. The copolymer includes a monomer unit (A) represented by the following formula (I) and a monomer unit (B) represented by the following formula (II), and has a molecular weight distribution of 1.7 or less. In the formulae, L is a single bond or a divalent linking group, Ar is an optionally substituted aromatic ring group, R1 is an alkyl group, R2 is an alkyl group, a halogen atom, or a haloalkyl group, p is an integer of not less than 0 and not more than 5, and in a case in which more than one R2 is present, each R2 may be the same or different.

Abstract: A positive resist composition comprising a base polymer comprising repeat units having a carboxy group whose hydrogen is substituted by an acid labile group in the form of a tertiary hydrocarbon group containing a nitrogen atom and aromatic group exhibits a high sensitivity, high resolution, low edge roughness and small size variation, and forms a pattern of good profile after exposure and development.

Abstract: The present invention provides an FPD pellicle frame body in which external color is controlled so as to make it easy to prevent scattering of exposure light, to perform the foreign object non-adhesion inspection before use, and the like, and a method for manufacturing the frame body efficiently. The FPD pellicle frame body of the present invention comprises: a stainless-steel member having a transparent oxide coating, and a film thickness of the transparent oxide coating being 420 nm to 700 nm. It is preferable that a brightness index L* due to the interference color of the reflected lights from the surface of the transparent oxide coating and the surface of the stainless-steel member is 33 or less.

Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.

Abstract: A method includes forming a photoresist layer over a wafer. The photoresist layer is exposed to a pattern of radiation using a photomask. The photoresist layer is developed after the photoresist layer is exposed to the pattern of radiation. The photomask includes a substrate and at least one opaque main feature. The substrate has a recessed region recessed from a first surface of the substrate and has a first width. The at least one opaque main feature protrudes from the first surface of the substrate and has a second width greater than the first width of the recessed region of the substrate. A height of the at least one opaque main feature is greater than a depth of the recess region of the substrate.

Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.

Abstract: A resist composition that contains a base material component exhibiting changed solubility in a developing solution under action of acid and a compound (D0) represented by General Formula (d0), in which R01, R02, R03, and R04 each independently represents a hydrogen atom, a hydroxy group, a halogen atom, or an alkyl group; alternatively, R01 and R02, R02 and R03, or R03 and R04 are bonded to each other to form an aromatic ring; R05 represents a hydrogen atom or an alkyl group; Y represents a group that forms an alicyclic group together with a carbon atom *C; provided that at least one of the carbon atoms that form the alicyclic group is substituted with an ether bond, a thioether bond, a carbonyl group, a sulfinyl group, or a sulfonyl group; m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation.