Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.

Abstract: A resist composition that contains a base material component exhibiting changed solubility in a developing solution under action of acid and a compound (D0) represented by General Formula (d0), in which R01, R02, R03, and R04 each independently represents a hydrogen atom, a hydroxy group, a halogen atom, or an alkyl group; alternatively, R01 and R02, R02 and R03, or R03 and R04 are bonded to each other to form an aromatic ring; R05 represents a hydrogen atom or an alkyl group; Y represents a group that forms an alicyclic group together with a carbon atom *C; provided that at least one of the carbon atoms that form the alicyclic group is substituted with an ether bond, a thioether bond, a carbonyl group, a sulfinyl group, or a sulfonyl group; m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation.

Abstract: The present invention relates to a method for manufacturing a part comprising at least one three-dimensional metallised pattern overlying a local enamel underlayer.

Abstract: The present invention discloses a photosensitive composition, comprising polyvinyl acetate (0% saponified) having a styryl type nitrogen-containing heterocyclic groups such as a styrylpyridinium or/and styrylquinolinium that possesses high UV light energy sensitivity with a small photosensitive group content, high solid content, high water resistance, and very sharp imaging characteristics and produced therefrom photosensitive compositions such as a photo-resist, photolithographic plates, screen printing stencil emulsion and film, and abrasion resistant photosensitive emulsion and film, and other photosensitive compositions being used for commercial and industrial applications.

Abstract: The inventive concept relates to a three-dimensional crosslinker composition and a method of manufacturing an electronic device using the same. According to the inventive concept, the three-dimensional crosslinker composition may be represented by Formula 1 below.

Abstract: An imprint method includes supplying a first photocurable resist to a first region of an object; irradiating the first resist with first light; forming a second resist over the object; bringing a template into contact with the second resist; and irradiating at least the second resist with second light through the template while the template is in contact with the second resist.

Abstract: An object of the present invention is to provide a conductive polymer composition which has good filterability and good film formability of a flat film on an electron beam resist and can be suitably used for an antistatic film for electron beam resist writing, showing excellent antistatic property in the electron beam writing process due to the property of low volume resistivity (?·cm), and, reducing an effect on lithography by making an effect of an acid diffused from the film minimum, and further having excellent peelability by H2O or an alkaline developer after writing.

Abstract: A material for forming an organic film, including: a polymer having a structure shown by the following general formula (1A) as a partial structure; and an organic solvent, where in the general formula (1A), W1 represents a tetravalent organic group, W2 represents a single bond or a linking group shown by the following formula (1B), R1 represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms, n1 represents an integer of 0 or 1, and n2 and n3 satisfy 0?n2?6,0?n3?6, and 1?n2+n3?6, and where R2 and R3 each independently represent hydrogen or an organic group having 1 to 30 carbon atoms, and the organic group R2 and the organic group R3 optionally bond to each other within a molecule to form a cyclic organic group.

Abstract: A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Z? is an organic anion; Ar1 is substituted or unsubstituted C4-60 heteroaryl group comprising a furan heterocycle; and R1 is substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Ar1 and R1 are optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Ar1 or substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through R1 or substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Z? as a pendant group to a polymer; and a solvent.

Abstract: A method of forming a pattern on a substrate is provided. The method includes forming a first layer on an underlying layer of the substrate, where the first layer is patterned to have a first structure. The method also includes depositing a grafting material on side surfaces of the first structure, where the grafting material includes a solubility-shifting material. The method further includes diffusing the solubility-shifting material by a predetermined distance into a neighboring structure that abuts the solubility-shifting material, where the solubility-shifting material changes solubility of the neighboring structure in a developer, and removing soluble portions of the neighboring structure using the developer to form a second structure.

Abstract: A resist composition is provided comprising a base polymer and a quencher comprising a salt compound obtained from a nitrogen-containing compound having an iodized aromatic ring bonded to the nitrogen atom via a C1-C20 hydrocarbon group and a compound having a 1,1,1,3,3,3-hexafluoro-2-propanol group. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A resist composition comprising an ammonium salt and fluorine-containing polymer comprising repeat units AU having an ammonium salt structure of an iodized or brominated phenol compound and repeat units FU-1 having a trifluoromethylalcohol group and/or repeat units FU-2 having a fluorinated hydrocarbyl group offers a high sensitivity and is unsusceptible to nano-bridging, pattern collapse or residue formation, independent of whether it is of positive or negative tone.

Abstract: A resist composition that contains a base material component (A), a first acid generator, and a second acid generator, the first acid generator is a compound represented by General Formula (b1), the second acid generator is a compound (B2) having an anion moiety having a molar volume of 250 cm3/mol or less, and the molar volume of the anion moiety of the compound (B2) is smaller than the molar volume of the anion moiety of the compound (B1). In the formula, Rb0 represents a specific condensed cyclic group, Yb0 represents a divalent linking group, Vb0 represents a single bond, Rc1 represents an aryl group having an electron-withdrawing group, Rc2 and Rc3 each independently represent an aryl group or are bonded to each other to form a ring together with a sulfur atom in the formula.

Abstract: A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, which contains a resin component (A1) exhibiting changed solubility in a developing solution under action of acid, the resin component (A1) has a constitutional unit (a01) derived from a compound represented by General Formula (a0-1), W01 represents a polymerizable group-containing group, Ya01 represents a single bond or a divalent linking group, Ra01 represents a cyclic acid dissociable group, q represents an integer in a range of 0 to 3, and n represents an integer of 1 or more, provided that n?q×2+4 is satisfied

Abstract: A resist composition comprising a quencher containing a nitroxyl radical having an iodized aromatic ring is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A resist composition comprising a base polymer and a quencher containing a compound having the formula (A) is provided.

Abstract: Disclosed are a compound represented by formula (I), a resin and a resist composition: wherein R1 represents an alkyl group having 1 to 6 carbon atoms which may have a halogen, hydrogen or halogen atom, R2 and R3 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms, R4 represents a fluorine atom, an alkyl fluoride group having 1 to 6 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and —CH2— included in the alkyl fluoride group and the alkyl group may be replaced by —O— or —CO—, R5 represents a hydrogen atom, an alkylcarbonyl group having 2 to 6 carbon atoms or an acid-labile group, m2 represents an integer of 1 to 4, m4 represents an integer of 0 to 3, and m5 represents 1 or 2, in which 2?m2+m4+m5?5.

Abstract: A resist composition comprising a base polymer and a quencher in the form of a heterocyclic amine compound having a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

Abstract: Disclosed are a salt represented by formula (I), an acid generator, and a resist composition including the same: wherein R1, R2 and R3 each represent a hydroxy group, *—O—R10, *—O—CO—O—R10, etc.; L10 represents an alkanediyl group; R10 represents an acid-labile group; R4, R5, R6, R7, R8 and R9 each represent a halogen atom, a haloalkyl group or a hydrocarbon group; A1, A2 and A3 each represent a hydrocarbon group which may have a substituent, and —CH2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO2—; m1 represents an integer of 1 to 5, m2, m3, m8 and m9 represent an integer of 0 to 5, m4 to m7 represent an integer of 0 to 4, 1?m1+m7?5, 0?m2+m8?5, 0?m3+m9?5; and AI? represents an organic anion.

Abstract: A planarization layer and method therefor. The planarization layer has a thickness ranging from about 2 to about 3 microns, and contains from about 8.0 to about 8.5 wt. % photoacid generator; from about 2 to about 3.6 wt. % photoinitiator; from about 0.35 to about 0.5 wt. % green dye; from about 35 to about 46 wt. % multifunctional epoxy compound; from about 35 to about 50 wt. % of one or more difunctional epoxy compounds; and from about 1 to about 2.6 wt. % silane adhesion promoter, wherein all weight percent is based on a total weight of the layer devoid of solvent.