Patents Examined by Matthew Song
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Patent number: 9903045Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.Type: GrantFiled: October 9, 2013Date of Patent: February 27, 2018Assignees: TAMURA CORPORATION, KOHA CO., LTD.Inventors: Shinya Watanabe, Daiki Wakimoto, Kazuyuki Iizuka, Kimiyoshi Koshi, Takekazu Masui
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Patent number: 9878915Abstract: A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible.Type: GrantFiled: March 11, 2014Date of Patent: January 30, 2018Assignee: MITSUBISHI MATERIALS CORPORATIONInventor: Yoshinobu Nakada
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Patent number: 9879357Abstract: A system for depositing a film on a substrate comprises a lateral control shutter disposed between the substrate and a material source. The lateral control shutter is configured to block some predetermined portion of source material to prevent deposition of source material onto undesirable portion of the substrate. One of the lateral control shutter or the substrate moves with respect to the other to facilitate moving a lateral growth boundary originating from one or more seed crystals. A lateral epitaxial deposition across the substrate ensues, by having an advancing growth front that expands grain size and forms a single crystal film on the surface of the substrate.Type: GrantFiled: March 11, 2013Date of Patent: January 30, 2018Assignee: TIVRA CORPORATIONInventor: Indranil De
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Patent number: 9873938Abstract: A biaxially textured crystalline layer formed on a substrate using ion beam assisted deposition (IBAD) is provided. The biaxially textured crystalline layer includes an oriented CaF2 crystalline layer having crystalline grains oriented in both in-plane and out-of-plane directions, where the out-of-plane orientation is a (111) out-of-plane orientation. The oriented CaF2 crystalline layer is disposed for growth of a subsequent epitaxial layer and the CaF2 crystalline layer is an IBAD CaF2 layer. The biaxially textured CaF2 layer can be used in a photovoltaic cell, an electronic or optoelectronic device, an integrated circuit, an optical sensor, or a magnetic device.Type: GrantFiled: December 15, 2014Date of Patent: January 23, 2018Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Bruce M. Clemens, James R. Groves, Garrett J. Hayes, Bingrui Joel Li, Alberto Salleo
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Patent number: 9864106Abstract: A semiconductor distributed Bragg reflector (DBR) including a first multilayer structure including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer interposed between the first multilayer structure and the second multilayer structure. The second semiconductor layer has a lower decomposition temperature than the first semiconductor layer. The third semiconductor layer has a lower decomposition temperature than the second semiconductor layer.Type: GrantFiled: June 17, 2014Date of Patent: January 9, 2018Assignee: Canon Kabushiki KaishaInventor: Takeshi Kawashima
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Patent number: 9856579Abstract: A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapor phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.Type: GrantFiled: January 20, 2011Date of Patent: January 2, 2018Assignee: FREIBERGER COMPOUND MATERIALS GMBHInventors: Gunnar Leibiger, Frank Habel, Stefan Eichler
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Patent number: 9845548Abstract: According to the disclosed embodiments, an advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, preferably while also preventing excessive heat from reaching a heat exchanger. In particular, a support base is described that includes one or more vents enabling improved heat flow throughout the system. Also, according to one or more additional embodiments, the functionality of the crucible support is adapted to be leveraged by a crucible manipulating device. For example, the support plate may have a plurality of slots for insertion of a “lifting arm”, such that the entire support plate assembly, as well as the crucible itself while on the support assembly, may be lifted and transported as a single unit.Type: GrantFiled: November 14, 2014Date of Patent: December 19, 2017Assignee: GTAT CorporationInventors: David F. Broyer, Hui Zhang, Ning Duanmu, Ian T. Witting
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Patent number: 9828693Abstract: A crystal of semiconductor material is produced in an apparatus having a crucible with a crucible bottom and a crucible wall, the crucible bottom having a top surface, an underside, and a multitude of openings disposed between the crucible wall and a center of the crucible bottom, and elevations disposed on the top surface and the underside of the crucible bottom; and an induction heating coil disposed below the crucible for melting semiconductor material and stabilizing a melt of semiconductor material covering a growing crystal of semiconductor material. The growth process comprises generating a bed of a semiconductor material feed on the top surface of the crucible bottom and melting semiconductor material on the bed using the induction heating coil.Type: GrantFiled: May 14, 2015Date of Patent: November 28, 2017Assignee: SILTRONIC AGInventors: Georg Brenninger, Georg Raming
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Patent number: 9828692Abstract: An apparatus for producing a single crystal of silicon comprises a plate with a top side, an outer edge, and an inner edge, a central opening adjoining the inner edge, and a tube extending from the central opening to beneath the bottom side of the plate; a device for metering granular silicon onto the plate; a first induction heating coil above the plate, provided for melting of the granular silicon deposited; a second induction heating coil positioned beneath the plate, provided for stabilization of a melt of silicon, the melt being present upon a growing single crystal of silicon. The top side of the plate consists of ceramic material and has elevations, the distance between the elevations in a radial direction being not less than 2 mm and not more than 15 mm.Type: GrantFiled: March 27, 2015Date of Patent: November 28, 2017Assignee: SILTRONIC AGInventors: Georg Brenninger, Waldemar Stein, Maik Haeberlen
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Patent number: 9822466Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.Type: GrantFiled: November 22, 2013Date of Patent: November 21, 2017Assignee: Corner Star LimitedInventors: Tirumani N. Swaminathan, John David Hilker, Salvador Zepeda
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Patent number: 9816200Abstract: A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm2/g to 1,000 cm2/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.Type: GrantFiled: November 27, 2013Date of Patent: November 14, 2017Assignees: TAIHEIYO CEMENT CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Kenta Masuda, Kouki Ichitsubo, Masakazu Suzuki, Kiyoshi Nonaka, Tomohisa Kato, Hideaki Tanaka
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Patent number: 9810526Abstract: A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible without contaminating the inner surface of the crucible, is provided. According to the present invention, a method for measuring a three-dimensional shape of a vitreous silica crucible, including a fogging step to form a fog onto an inner surface of the vitreous silica crucible, a three-dimensional shape measuring step to measure a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light, is provided.Type: GrantFiled: October 31, 2012Date of Patent: November 7, 2017Assignee: SUMCO CORPORATIONInventors: Toshiaki Sudo, Tadahiro Sato, Ken Kitahara
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Patent number: 9809900Abstract: A growth chamber or a Czochralski crystal growth station has one or more re-sealable caps that are inserted into the chamber body. An O-ring seals the cap within its mating portion of the chamber body. The re-sealable caps facilitate re-use of the chamber body for a future crystal growth cycle.Type: GrantFiled: October 21, 2014Date of Patent: November 7, 2017Assignee: Siemens Medical Solutions USA, Inc.Inventors: Mark S. Andreaco, Troy Marlar, Brant Quinton
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Patent number: 9809902Abstract: The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner.Type: GrantFiled: October 31, 2012Date of Patent: November 7, 2017Assignee: SUMCO CORPORATIONInventors: Toshiaki Sudo, Tadahiro Sato, Ken Kitahara, Eriko Kitahara, Makiko Kodama
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Patent number: 9797067Abstract: A selective epitaxial growth method includes preparing a target object including a single crystal substrate in which an epitaxial growth region is partitioned by a suppression film; and growing the epitaxial layer on the epitaxial growth region of the target object until a predetermined film thickness is obtained. The growing the epitaxial layer includes first source gas supply process of supplying a source gas onto the target object under a first pressure to grow a first epitaxial layer on the epitaxial growth region, first removing process of removing deposits on the suppression film, second source gas supply process of supplying the source gas onto the target object under a second pressure higher than the first pressure, and second removing process of removing the deposits on the suppression film. The second source gas supply process and the second removing process are repeated until the predetermined film thickness is obtained.Type: GrantFiled: March 5, 2014Date of Patent: October 24, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Daisuke Suzuki, Akinobu Kakimoto, Satoshi Onodera
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Patent number: 9758900Abstract: Buckling of a vitreous silica crucible 12 or inward fall of a sidewall 15 is effectively suppressed. The vitreous silica crucible 12 includes the cylindrical sidewall 15 having an upward-opening rim, a mortar-shaped bottom 16 including a curve, and a round portion 17 connecting the sidewall 15 and the bottom 16. In the vitreous silica crucible 12 the per-unit area thermal resistance in the thickness direction of the sidewall 15 is higher than that of the round portion 17.Type: GrantFiled: October 31, 2012Date of Patent: September 12, 2017Assignee: SUMCO CORPORATIONInventors: Toshiaki Sudo, Tadahiro Sato, Ken Kitahara, Takuma Yoshioka, Hiroshi Kishi
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Patent number: 9758871Abstract: A method of manufacturing an epitaxial wafer in which an epitaxial layer is grown over a main surface of a silicon wafer placed substantially horizontally on a susceptor is provided. The method comprises: a growing step of the epitaxial layer; and a cooling step of cooling the epitaxial wafer having the epitaxial layer. The cooling step comprises: a wafer measurement step of measuring a temperature of the epitaxial wafer; a susceptor measurement step of measuring a temperature of the susceptor; and a control step of controlling a heater capable of heating at least the susceptor or the epitaxial wafer such that difference between a temperature of the epitaxial wafer and a temperature of the susceptor is within a predetermined range.Type: GrantFiled: December 7, 2009Date of Patent: September 12, 2017Assignee: SUMCO TECHXIV CORPORATIONInventor: Kazuhiro Narahara
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Patent number: 9748112Abstract: After determining the size of oxygen precipitates and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress ?cri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained size of the oxygen precipitates and residual oxygen concentration; and the obtained critical shear stress ?cri and the thermal stress ? applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress ? is equal to or more than the critical shear stress ?cri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress ? is less than the critical shear stress ?cri.Type: GrantFiled: February 24, 2016Date of Patent: August 29, 2017Assignee: SUMCO CORPORATIONInventors: Jun Fujise, Toshiaki Ono
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Patent number: 9735003Abstract: A film-forming apparatus and film-forming method comprising, a chamber, a first gas supply unit supplying a reaction gas for a film-forming process to the chamber, a substrate-supporting portion supporting a substrate placed in the chamber, a heating unit heating the substrate from below the substrate-supporting portion, a rotary drum supporting the substrate-supporting portion on a top thereof, and including the heating unit disposed therein, a rotary shaft disposed in a lower part of the chamber, and rotating the rotary drum, a reflector reflecting heat from the heating unit, surrounding the rotary drum, and being disposed so as to have an upper end higher in height than an upper end of the substrate-supporting portion, and a second gas supply unit supplying a hydrogen gas or an inert gas between the rotary drum and the reflector.Type: GrantFiled: March 26, 2013Date of Patent: August 15, 2017Assignee: NuFlare Technology, IncInventors: Takumi Yamada, Yuusuke Sato
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Patent number: 9735008Abstract: Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.Type: GrantFiled: October 25, 2013Date of Patent: August 15, 2017Assignee: University of Utah Research FoundationInventors: Jason Merrell, Feng Liu, Gerald B. Stringfellow