Abstract: A method for growing a single crystal in a chamber. The method includes heating raw material to form a melt for forming the single crystal. A crystal seed is then inserted into the melt and pulled from the melt to form a partial ingot, wherein the partial ingot radiates heat. An amount of gas is then introduced into the chamber which corresponds to a size of the partial ingot so as to provide a constant crystallization rate.

Abstract: A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal.

Abstract: The present invention is an apparatus for producing a single crystal, growing the single crystal by the Czochralski method and comprising at least: a main chamber in which a crucible for accommodating a raw material melt and a heater for heating the raw material melt are arranged; a pulling chamber into which the grown single crystal is pulled and accommodated, the pulling chamber being continuously provided above the main chamber; and a cooling cylinder extending at least from a ceiling of the main chamber toward a surface of the raw material melt so as to surround the single crystal during pulling, the cooling cylinder being forcibly cooled with a cooling medium. As a result, there is provided an apparatus for producing a single crystal that can increase the growth rate of the single crystal by efficiently cooling the single crystal during the growth.

Abstract: A graphite member utilized in a pulling device for pulling a silicon single crystal is provided. An edge part of the graphite member is rounded off which is exposed to a reactive gas. The graphite member may comprise: a plate part having a thickness of ‘t’ wherein a curvature radius of ‘r’ satisfies the formula: t/8?r?t/4.

Abstract: A strip of sacrificial semiconductor material is formed on top of a non-sacrificial semiconductor material substrate layer. A conformal layer of the non-sacrificial semiconductor material is epitaxially grown to cover the substrate layer and the strip of sacrificial semiconductor material. An etch is performed to selectively remove the strip of sacrificial semiconductor material and leave a hollow channel surrounded by the conformal layer and the substrate layer. Using an anneal, the conformal layer and the substrate layer are reflowed to produce an optical waveguide structure including the hollow channel.

Abstract: The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal.

Abstract: A device for heat treating (annealing) a III-V semiconductor wafer comprises at least one wafer support unit which is dimensioned such that a cover provided above the wafer surface is either spaced without any distance or with a distance of maximally about 2 mm to the wafer surface. A process for heat treating III-V semiconductor wafers having diameters larger than 100 mm and a dislocation density below 1×104 cm?2 is carried out in the device of the invention. SI GaAs wafers produced have an at least 25% increased characteristic fracture strength (Weibull distribution), an improved radial macroscopic and mesoscopic homogeneity and an improved quality of the mechano-chemically polished surface. The characteristic fracture strength is higher than 1900 MPa.

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract: A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.

Abstract: There is provided a silica crucible for pulling a silicon single crystal, comprising silica glass and having a two-layer structure of an outer layer and an inner layer, wherein the inner layer, in a sectional side view of the crucible, has a wavy inner surface shape having mountain parts and valley parts at least between a start position and an end position for the pulling of a silicon single crystal in a silicon melt surface, and when a distance from an upper opening end of the crucible to the start position for the pulling of the silicon single crystal is 100, only a crucible portion from the upper opening end to a position within a range of 40 to 100 is crystalline.

Abstract: A single crystal pulling apparatus comprises: a chamber; a crucible disposed within the chamber for containing a melt; a water-cooling means disposed within the chamber in such a manner as surrounding a single crystal pulled up from the melt in the crucible; water piping for feeding cooling water to and discharging the same from the water-cooling means; and supporting arms connected to the chamber for supporting the water-cooling means, wherein the supporting arms are disposed between the single crystal and the water piping. According to this configuration, the supporting arms can prevent the water piping from being damaged in the event of fall and collapse of the single crystal due to failure of the seed neck portion or in the event of rupture of the single crystal due to thermal stress, for instance.

Abstract: There is provided a quartz glass article having a surface treated with novel coating materials which provides a reduced chemistry, wherein the quartz glass surface having a reduced chemistry upon exposure to melted silicon or similarly corrosive environments, forms crystalline structures covering at least 30% of the coated surface of the quartz glass crucible. Said crystalline covered surface provides a more stable surface of contact with the silicon melt and the growth of single crystal silicon. In one embodiment of the invention, the coating material comprises at least a methyl group for providing at least one of a hydrogenated and a methylated surface on the coated surface, forming rosette structures, or other crystalline morphologies covering at last 80% of the coated surface. In another embodiment of the invention, the coating material is selected from at least one of an amine, an organosilane halogen and mixtures thereof.

Abstract: An object of the present invention is to manufacture single crystals of high quality on an industrial production scale by preventing impurities from being mixed in single crystals when the single crystals are produced by the solvothermal method. A pressure vessel body 1, in which a supercritical state is maintained, is made of heat resistant alloy, a portion of the pressure vessel body is open, a corrosion-resistant mechanical lining 5 is provided on an inner face of the pressure vessel and on an entire outer circumferential edge of the opening, and the opening is sealed by an airtight mating face formed out of a corrosion-resistant mechanical lining, which is formed on the outer circumferential edge of the opening, and by an airtight mating face of the corrosion-resistant mechanical lining cover 6 on an inner face of the cover 3 through a corrosion-resistant gasket member.

Abstract: The present invention refers to a method as well as an apparatus for depositing a layer at a substrate, the layer containing at least two components co-deposited by at least two evaporation sources, wherein the mixture of the components regarding the content of the components is set by tilting the evaporation sources to predetermined angle and/or by positioning the evaporation sources at a predetermined distance with respect to the substrate and/or wherein evaporation plumes of the evaporation sources are arranged such that the maxima of the evaporation plumes are separated locally with respect to the substrate.

Abstract: Provided is a vitreous silica crucible which has a special region for suppressing vibration of melt surface during pulling of a silicon single crystal and at the same time, a marking capable of accurately monitoring a changed position of the melt surface when passing through the special region. The special region for preventing sloshing of silicon melt is provided on an inner wall of a straight body portion, and the marking is provided at least at an upper end and a lower end of the special region.

Abstract: Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal which can suppress melt surface vibration of silicon melt filled therein and has a long lifetime. The crucible includes a peripheral wall portion, a curved portion and a bottom portion, and has a plurality of micro recesses on the specific region of the inner surface of the peripheral wall portion.

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilized in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterized in that it consists of: forming at least one thin layer (1) on a nanostructured support with high specific surface (2), and treating the nanostructured support with high specific surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.

Abstract: The crucible and the side heater are held in the respective initial positions, and the raw material is put into the crucible. These initial positions are positions where the crucible side surface is mainly heated by the side heater. When the side heater heats the crucible side surface, the raw material is melted to form melt. When a part or all of the raw material is melted, the crucible is raised from the initial position or the side heater is lowered from the initial position. At this time, the position of the crucible or the side heater is adjusted such that the amount of heat applied to the lower side curved portion of the crucible side surface is greater than that in the initial relative position between the crucible and the side heater.

Abstract: Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

Abstract: It is provided a method of producing a crystal of a nitride of a group 13 element in a melt by flux method. The melt is generated by heating a composition including a material for the group 13 element, a material for at least one of an alkali metal and an alkaline earth metal and a liquid material for germanium. Upon producing a crystal of a nitride of a group 13 element in a melt by flux method, it is thereby possible to reduce in-plane distribution of a property such as carrier density of the thus obtained crystal of a nitride of a group 13 element.