Abstract: A passive Q switching laser device according to an embodiment of the present technology includes: a passive Q switching laser; a signal source; a modulation unit; and a power source unit. The passive Q switching laser includes an excitation light source that emits excitation light, and a resonator that is excited by the excitation light to emit oscillation light. The signal source outputs a drive signal for driving the excitation light source. The modulation unit modulates, on the basis of emission timing at which the oscillation light is emitted from the passive Q switching laser, the drive signal output from the signal source. The power source unit drives, on the basis of the drive signal modulated by the modulation unit, the excitation light source to emit the excitation light.

Abstract: An optical apparatus includes: an optical component opposed to and spaced apart from a light-emitting surface through which laser light is emitted; a case that houses a semiconductor laser element and the optical component and includes an introduction port for introducing gas and an exhaust port for exhausting the gas; and a flow passage section (i.e., a tubular body) including a spray port for spraying the semiconductor laser element with the gas introduced from the introduction port.

Abstract: Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an active mesa structure in combination with an electrical waveguide, wherein the active mesa structure comprises a plurality of laser regions within the active mesa structure itself, each laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other laser regions of the active mesa structure.

Abstract: A laser driving device and a method for enabling a uniform light field, wherein the laser driving device is a high-power laser driving device that enables a uniform light field on the basis of a narrow-band low-spatial-coherence light and is provided for laser fusion. The narrow-band low-spatial-coherence light is configured as a seed of the laser driving device, an amplification and transmission unit amplifies the seed, a frequency conversion unit converts a frequency of the laser, and a focusing component is configured for laser focusing and uniform illumination.

Abstract: The system and method for cooling a laser using a split liquid cooled heat exchanger. The temperature of coolant entering the system is applied to a portion of the system most in need of lower temperatures and a second heat exchanger uses the outflow from the first heat exchanger to cool a remaining portion of the system that has a tolerance for higher temperatures. The laser cooling system is compact, e.g., less than 45 cubic inches and can handle thermal loads of about 800 W.

Abstract: A system is provided for maintaining a safe operating area while also providing a suitable forward bias voltage to drive a laser diode. The system can monitor a voltage that is applied to a laser diode driver using a threshold that is based on the fabrication process of the laser diode driver. For example, a system can utilize a first threshold for a laser diode driver that is fabricated utilizing a 10 nm process and utilize a second threshold for another laser diode driver that is fabricated utilizing a 20 nm process. The threshold can also be based on a color of the laser or a desired operation mode. The system can monitor a voltage applied to a laser diode using different thresholds while controlling a bleed current to ensure that the laser diode is forward biased while mitigating the risk of silicon breakdown of the laser diode driver.

Abstract: A pulse transformer for modifying the amplitude and phase of short optical pulses includes a pulse source and an adaptively controlled stretcher or compressor including at least one fiber Bragg grating (FBG) configured to receive pulses from the pulse source and having a first second-order dispersion parameter (D21). The pulse transformer further includes at least one optical amplifier configured to receive pulses from the FBG and a compressor configured to receive pulses from the at least one optical amplifier. The compressor has a second second-order dispersion parameter (?D22), an absolute value of the first second-order dispersion parameter (|D21|) and an absolute value of the second second-order dispersion parameter (|?D22|) that are substantially equal to one another to within 10%.

Abstract: A semiconductor laser element includes: an n-side semiconductor layer formed of a nitride semiconductor; an active layer disposed on or above the n-side semiconductor layer and formed of a nitride semiconductor; a p-side semiconductor layer disposed on the active layer, formed of a nitride semiconductor, and including: an undoped first part disposed in contact with an upper face of the active layer and comprising at least one semiconductor layer, an electron barrier layer disposed in contact with an upper face of the first part, containing a p-type impurity, and having a band gap energy that is larger than a band gap energy of the first part, and a second part disposed in contact with the upper face of the electron barrier layer and comprising at least one p-type semiconductor layer containing a p-type impurity; and a p-electrode disposed in contact with the upper face of the second part.

Abstract: To provide a semiconductor device, a semiconductor laser, and a method of producing a semiconductor device that are capable of sufficiently ensuring electrical connection between a transparent conductive layer and a semiconductor layer. [Solving Means] A semiconductor device according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is not less than 0.99 and not more than 1.0 times a first width, a third width is not less than 0.96 and not more than 1.

Abstract: An optical power supply system includes a first data communication device and a second data communication device. The first data communication device includes a power sourcing equipment device including a first semiconductor laser; and a first transmitter including a second semiconductor laser and a first modulator. The second data communication device includes a powered device comprising a photoelectric conversion element; a receiver; a data processing unit; and a second transmitter including a third semiconductor laser and a second modulator. The first data communication device and the second data communication device perform optical communication with each other. The electric power obtained by the conversion of the feed light by the photoelectric conversion element is driving power for the second transmitter and the receiver.

Abstract: An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.

Abstract: Gaseous laser systems and related techniques are disclosed. Techniques disclosed herein may be utilized, in accordance with some embodiments, in providing a gaseous laser system with a configuration that provides (A) pump illumination with distinct edge surfaces for an extended depth and (B) an output beam illumination from a resonator cavity with distinct edges in its reflectivity profile, thereby providing (C) pump beam and output beam illumination on a volume so that the distinct edge surfaces of its pump and beam illumination are shared-edge surfaces with (D) further edge surfaces of the amplifier volume at the surfaces illuminated directly by the pump or output beams, as defined by optical windows and (optionally) by one or more flowing gas curtains depleted of the alkali vapor flowing along those optical windows. Techniques disclosed herein may be implemented, for example, in a diode-pumped alkali laser (DPAL) system, in accordance with some embodiments.

Abstract: Semiconductor structures and methods for forming the same are provided. The method includes forming a dummy gate structure over a substrate and forming a sealing layer surrounding the dummy gate structure. The method includes forming a spacer covering the sealing layer and removing the dummy gate structure to form a trench. The method further includes forming an interfacial layer and a gate dielectric layer. The method further includes forming a capping layer over the gate dielectric layer and partially oxidizing the capping layer to form a capping oxide layer. The method further includes forming a work function metal layer over the capping oxide layer and forming a gate electrode layer over the work function metal layer. In addition, a bottom surface of the capping oxide layer is higher than a bottom surface of the spacer.

Abstract: An acousto-optic Q switch, a resonant cavity, and a pulse laser device for improving laser device power. The acousto-optic Q switch includes: a transparent optical element configured to form a phase grating that diffracts laser; a piezoelectric transducer arranged at one end of the transparent optical element and configured to convert electrical energy into ultrasonic energy to form the phase grating in the transparent optical element; and an absorber arranged at the other end of the transparent optical element to absorb the ultrasonic energy.

Abstract: A fiber laser system based in solitonic passive mode-locking, including a laser diode to emit and deliver an optical signal of a first wavelength; a single-fiber laser cavity including a dichroic mirror, a SESAM and a polarization maintaining highly-doped active fiber, to receive the emitted signal and to emit a pulsed optical signal of a second wavelength, generating laser light in the form of mode-locked ultrashort pulses; a unit coupling the laser diode to the single-fiber laser cavity; and an isolator device protecting the cavity from back reflections. The solitonic mode-locked ultrashort pulses are comprised in a range of 100 fs<10 ps with repetition rates of hundreds MHz to tens of GHz.

Abstract: A light emitting device includes a base, a first semiconductor laser element, a second semiconductor laser element, a lens member, and a waveplate. The base has a bottom part. The first semiconductor laser element is disposed on the bottom part of the base. The second semiconductor laser element is disposed on the bottom part of the base. The second semiconductor laser element has a different polarization direction from a polarization direction of the first semiconductor laser element. The lens member is a member into which light beams from the first semiconductor element and the second semiconductor laser element enter. The waveplate is configured to change the polarization direction of light from the first semiconductor laser element.

Abstract: A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes in a surface of the guide layer by etching, the holes being two-dimensionally periodically arranged within a plane parallel to the guide layer; (d) etching the guide layer by using an etchant having selectivity to the {0001} plane and a {10?10} plane of the guide layer; (e) supplying a gas containing a nitrogen source to cause mass transport without supplying a group-III material gas, and then supplying the group-III material gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer in this order on the first embedding layer.

Abstract: In one example, an optoelectronic assembly may include a laser array, an amplifier array, and a multimode interference coupler optically coupling the laser array and the amplifier array. The laser array may include at least one primary laser and at least one spare laser configured to be activated if the primary laser fails. The amplifier array may include at least two amplifiers configured to amplify optical signals received from the laser array.

Abstract: A laser device based on silicon photonics with an in-cavity power monitor includes a gain chip mounted on a silicon photonics substrate and configured to emit light in an active region bounded between a frontend facet with low reflectivity and a backend facet with anti-reflective characteristics. The laser device further includes a wavelength tuner formed with waveguides in the silicon photonics substrate optically coupled to the backend facet to receive light from the gain chip and configured to have a reflector with high reflectivity to reflect the light in an extended cavity formed with the frontend facet through which a laser with a tuned wavelength and amplified power is outputted. Additionally, the laser device includes a photodiode formed in the silicon photonics substrate and coupled to the waveguides in the extended cavity right in front of the reflector to measure power of light thereof.

Abstract: A sensing method for in-situ non-perturbing measurement of characteristics of laser beams at the exit of the laser beam delivery fiber tips include measuring power of a laser beam transmitted through delivery fiber tip in fiber-optics systems. A sensing devices for in-situ non-perturbing sensing and control of multiple characteristics of laser light transmitted through light delivery fiber tips includes a fiber-tip coupler comprised of a shell with enclosed delivery fiber having a specially designed angle-cleaved endcap and one or several tap fibers that are specially arranged and assembled at back side of the endcap and other variations. Methods and system architectures for in-situ non-perturbing control of characteristics of laser beams at the exit of the laser beam delivery fiber tips include fiber-tip couplers and sensing modules that receive laser light from tap fibers, and systems for optical processing to enhance light characteristics suitable for in-situ measurement.