Abstract: A fiber laser system based in solitonic passive mode-locking, including a laser diode to emit and deliver an optical signal of a first wavelength; a single-fiber laser cavity including a dichroic mirror, a SESAM and a polarization maintaining highly-doped active fiber, to receive the emitted signal and to emit a pulsed optical signal of a second wavelength, generating laser light in the form of mode-locked ultrashort pulses; a unit coupling the laser diode to the single-fiber laser cavity; and an isolator device protecting the cavity from back reflections. The solitonic mode-locked ultrashort pulses are comprised in a range of 100 fs<10 ps with repetition rates of hundreds MHz to tens of GHz.

Abstract: A laser device is provided that includes an element made of laser-active material and a cladding element bonded to the element so as to allow heat exchange by heat conduction between the cladding element and the element. The laser-active material emitting laser light when excited by pump light. The element being made of a glass. The cladding element being made of a material that exhibits an absorption coefficient for the pump light that is lower than a corresponding absorption coefficient of the glass. The element and cladding element being configured so that the pump light can be directed through the cladding element into the element and/or so that the pump light can be directed through the element into the cladding element.

Abstract: A laser system includes: a laser light source; a light detector configured to output an electric current proportional to an output laser light of the laser light source; a resistor network configured to convert the electric current output from the light detector to a monitor voltage; and a regulator configured to control an intensity of the output laser light based on a comparison between the monitor voltage and a voltage corresponding to a control target value, wherein the resistor network comprises at least two branch circuits connected in parallel with each other, and the branch circuits include respective digital potentiometer circuits commonly formed in a single device.

Abstract: The present disclosure relates to an optical waveguide system. The system has a first waveguide having a core-guide and a cladding material portion surrounding and encasing the core-guide to form a substantially D-shaped cross sectional profile with an exposed flat section running along a length thereof. The core-guide enables a core-guide mode for an optical pulse signal having a first characteristic, travelling through the core-guide. A material layer of non-linear material is used which forms a second waveguide. The material layer is disposed on the exposed flat section of the cladding material portion. The material layer forms a plasmonic device to achieve a desired coupling with the core-guide to couple optical energy travelling through the core-guide into the material layer to modify the optical energy travelling through the core-guide such that the optical energy travelling through the core-guide has a second characteristic different from the first characteristic.

Abstract: A device for generating laser radiation comprises a temperature-controlled optical setup comprising an optically non-linear solid state medium arranged in a resonator and an active region. The outgoing laser radiation is generated from a pump beam introduced into the optically non-linear solid state medium. A first temperature actuator and a second temperature actuator configured to independently adjust temperature values in the active region of the optically non-linear solid state medium. The first temperature actuator is configured regulate a length of the resonator by setting a first temperature value within a first portion of the active region. The second temperature actuator is configured to match phases of wavelengths generated by the outgoing laser radiation and phases of wavelengths of the pump beam radiation by setting a second temperature value within a second portion of the active region.

Abstract: A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature. The method comprising the following steps: (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafers; and (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment, the deep-cooling annealing treatment includes a temperature increasing process and a rapid cooling process.

Abstract: A spectral interference height detecting apparatus includes a chuck table for holding a workpiece thereon and a height detecting unit for detecting the height of an upper surface of the workpiece held on the chuck table. The height detecting unit includes a light source for emitting light in a predetermined wavelength band into a first optical path, a condenser disposed in the first optical path for converging light onto the workpiece held on the chuck table, a beam splitter disposed between the light source and the condenser for splitting the light in the first optical path into a second optical path, a mirror disposed in the second optical path to form a basic optical path length, for reflecting light into the second optical path and returning light through the beam splitter to the first optical path.

Abstract: Semiconductor structures and method for forming the same are provided. The method for manufacturing the semiconductor structure includes forming a first gate dielectric layer over a substrate and forming a first capping layer over the first gate dielectric layer. The method for manufacturing the semiconductor structure includes oxidizing the first capping layer to form a first capping oxide layer and forming a first work function metal layer over the first capping oxide layer. The method for manufacturing the semiconductor structure includes forming a first gate electrode layer over the first work function metal layer.

Abstract: Systems and methods for a self-injection locked SBS laser are provided herein. In certain embodiments, a system includes a pump laser source providing a pump laser; an SBS resonator receiving the pump laser through a first port and scattering some of the pump laser to provide an SBS laser through the first port, wherein a frequency shift of Brillouin scattering within the SBS resonator is an integer multiple of a free-spectral range for the SBS resonator; a filter receiving the pump laser on a first filter port and the SBS laser on a second filter port, wherein the pump laser is output through the second filter port and the SBS laser is output through a drop port; and a pump laser path coupling the output pump laser into the pump laser source, wherein a frequency of the pump laser becomes locked to a resonance frequency of the SBS resonator.

Abstract: The system and method of using an ultra-short pulse mid and long wave infrared laser. The system is seeded with a 2 ?m laser source having a pulse duration in the femtosecond range. The beam is stretched, to increase the pulse duration, and the beam is amplified, to increase an energy level of the laser beam. Both mid wave IR and long wave IR seed beams are first generated, and then amplified via one or more optical parametric chirped-pulse amplification stages. A compressor may be used to compress one or more of the output beams to achieve high peak power and controllable pulse duration in the output beams. The output beams may then be used to create atmospheric or material effects at km range.

Abstract: A semiconductor device comprising a waveguide having a core, said core having inserted therein one or more layers of nanoemitters.

Abstract: A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. A blanket dielectric layer is situated over the patterned group III-V device. A contact metal is situated within the blanket dielectric layer and an interconnect metal is situated over the blanket dielectric layer. The blanket dielectric layer can be substantially planar. The contact metal and the interconnect metal can be electrically connected to the patterned group III-V device. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate.

Abstract: An apparatus includes an amplified spontaneous emission source, which in turn includes an optical fiber. The optical fiber includes a solid core and a first end. The solid core includes a silica matrix. The silica matrix includes a rare-earth element and a glass co-dopant. The rare-earth element includes dysprosium or neodymium. The glass co-dopant includes Al2O3. The apparatus further includes a laser pump diode coupled to the first end of the optical fiber. The laser pump diode and the optical fiber cooperate to generate a spontaneous spectral emission confined to the solid core. The spontaneous spectral emission includes a simultaneous plurality of spectral regions.

Abstract: What is provided here are: a step of forming a first semiconductor layer on a base member; a step of forming a mask on the first semiconductor layer; a step of etching the first semiconductor layer by using the mask, to thereby form a semiconductor structure; a step of forming a second semiconductor layer in a region abutting on a side surface of the semiconductor structure, said second semiconductor layer having a convex portion abutting to the mask; a convex-portion removing step of removing the convex portion by supplying an etching gas thereto; and a regrown-layer forming step of supplying a material gas onto the semiconductor structure and the second semiconductor layer, to thereby form a regrown layer; wherein the convex-portion removing step and the regrown-layer forming step are executed in a same manufacturing apparatus.

Abstract: A electro-absorption optical modulator includes a multiple quantum well composed of a plurality of layers including a plurality of quantum well layers and a plurality of barrier layers that are alternately stacked, the plurality of quantum well layers and the plurality of barrier layers including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the multiple quantum well being 10% or more and 150% or less of the p-type semiconductor layer in a p-type carrier concentration, and in the multiple quantum well, an effective carrier concentration which corresponds to a difference between the p-type carrier concentration and an n-type carrier concentration is ±10% or less of the p-type carrier concentration of the multiple quantum well.

Abstract: In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

Abstract: A semiconductor structure includes a group III-V chiplet over a group IV substrate. A group IV optoelectronic device is situated in the group IV substrate. A patterned group III-V optoelectronic device is situated in the group III-V chiplet. A heating element is near the group IV optoelectronic device, or alternatively, near the patterned group III-V optoelectronic device. A dielectric layer is over the patterned group III-V optoelectronic device. A venting hole is in the dielectric layer in proximity of the heating element. A cavity is in the group IV substrate in proximity to the heating element.

Abstract: A laser control device includes a processor configured to control, when a control circuit of a laser device detects occurrence of an abnormality in a laser oscillator or a laser optical system and stops laser output from the laser oscillator, the control circuit based on a result of determining whether to enable or disable re-outputting of laser light from the laser oscillator by inputting, to a classifier, input data being at least a part of environmental data and state data about the laser device in a predetermined period including a stop time of laser output. Then, the state data and the input data in the predetermined period include at least one of time-series data about a light amount of laser light and time-series data about a light amount of return light propagating in a direction opposite to a direction of the laser light in the predetermined period.

Abstract: A semiconductor laser element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer. A least a portion of the p-side semiconductor layer forms a ridge projecting upward. The p-side semiconductor layer includes an undoped first part, an electron barrier layer containing a p-type impurity and having a larger band gap energy than the first part, and a second part having at least one p-type semiconductor layer. The first part includes an undoped p-side composition graded layer in which a band gap energy increases towards the electron barrier layer, and an undoped p-side intermediate layer disposed on or above the p-side composition graded layer. A lower end of the ridge is positioned at the p-side intermediate layer.

Abstract: A power sourcing equipment (PSE) device of an optical power supply system includes a semiconductor laser that oscillates with electric power, thereby outputting feed light. The semiconductor laser includes a semiconductor region exhibiting a light-electricity conversion effect. A semiconductor material of the semiconductor region is a laser medium having a laser wavelength of 500 nm or less. A powered device of the optical power supply system includes a photoelectric conversion element that converts feed light into electric power. The photoelectric conversion element includes a semiconductor region exhibiting a light-electricity conversion effect. A semiconductor material of the semiconductor region is a laser medium having a laser wavelength of 500 nm or less.