Abstract: An organic light-emitting display device with improved light efficiency includes a plurality of pixel electrodes each corresponding one of at least a first, second, or third pixel; a pixel-defining layer covering an edge and exposing a central portion of the pixel electrodes; an intermediate layer over the pixel electrode and including an emission layer; an opposite electrode over the intermediate layer; and a lens layer over the opposite electrode and including a plurality of condensing lenses each having a circular lower surface. An area of the portion of the pixel electrode exposed by the pixel-defining layer is A, and an area of the lower surface of the condensing lens is B. For the first pixel, a ratio B/A ranges from about 1.34 to about 2.63. For the second pixel, B/A ranges from about 1.43 to about 3.00, For the third pixel, B/A ranges from about 1.30 to about 2.43.

Abstract: A method for transferring a thin layer from a donor substrate to a receiver substrate including the steps of implantation of species carried out in a uniform manner on the whole of the donor substrate to form therein an embrittlement plane which delimits the thin layer and a bulk part of the donor substrate, of placing in contact the donor substrate and the receiver substrate and of initiating and propagating a fracture wave along the embrittlement plane. The method comprises, before the placing in contact, a step of localised reduction of a capacity of the embrittlement plane to initiate the fracture wave. This step of localised reduction may be carried out by means of a localised laser annealing of the donor substrate.

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a lateral outer perimeter surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; a first pad portion and a second pad portion formed on the semiconductor stack to respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the second pad portion and the first pad portion are arranged in a first direction; wherein the plurality of vias is arranged in a plurality of rows, the plurality of rows are arranged in the first direction and includes a first row and a second row, the first row is covered by the second pad portion, the second row is not covered by the first pad portion and the second pad portion, whe

Abstract: A flexible organic light-emitting display device and a method of manufacturing the same. The flexible organic light-emitting display device includes a metal oxide infiltrated layer as part of at least one of a plurality of organic layers stacked on and around an organic light-emitting device.

Abstract: A semiconductor device, allowing easy hole extraction, including a semiconductor substrate having drift and base regions; and transistor and diode portions, in which trench portions and mesa portions are formed, is provided. The transistor portion includes emitter and contact regions above the base region and exposed to an upper surface of the semiconductor substrate. The emitter region has a higher concentration than the drift region. The contact region has a higher concentration than the base region. The mesa portions include boundary mesa portion(s) at a boundary between the transistor and diode portions. The trench portions include dummy trench portion(s) provided adjacent to a trench portion adjacent to the boundary mesa portion(s) and provided on the transistor portion side relative to the trench portion adjacent to the boundary mesa portion(s). The boundary mesa portion(s) include a base boundary mesa portion in which the base region is exposed to the upper surface.

Abstract: A display device includes: a substrate; a data line on the substrate; a first insulating layer on the data line; a first transistor on the first insulating layer; a second insulating layer on the first transistor; a pixel electrode on the second insulating layer, the pixel electrode being electrically connected to the first transistor; and an auxiliary data pattern on the second insulating layer as a same layer as the pixel electrode, the auxiliary data pattern being electrically connected to the data line.

Abstract: An electroluminescent display device includes a substrate having an emission region and a bezel region, a bank layer that extends from the emission region to the bezel region, a plurality of signal lines which are disposed on different layers on the substrate, a first metal layer that overlaps the plurality of signal lines and has a step, a second metal layer that is disposed on the first metal layer, and an intermediate layer between the first and second metal layer. A step or curvature above the first electrode may be offset by the first intermediate layer so that incident from the outside is inwardly reflected. Therefore, a failure that a user at the outside recognizes the reflected light may be solved.

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

Abstract: An array substrate, a display panel, and a display device are disclosed. The array substrate includes a substrate and an array functional layer. The array substrate is provided with a through hole area including a through hole, a buffer area provided around the through hole area, and a display area provided around the buffer area. The buffer area includes part of the substrate and an inorganic film layer provided by the array functional layer. At least a groove is formed in the inorganic film layer around the through hole area, and the groove has a closed ring shape or a non-closed ring shape.

Abstract: A semiconductor device is provided that has a semiconductor substrate, a drift layer of a first conductivity type formed in the semiconductor substrate, a base region of a second conductivity type formed in the semiconductor substrate and above the drift layer, and an accumulation region of the first conductivity type provided between the drift layer and the base region and having an impurity concentration higher than an impurity concentration in the drift layer, wherein the accumulation region has a first accumulation region and a second accumulation region that is formed more shallowly than the first accumulation region is and on a side of a boundary with a region that is different from the accumulation region in a planar view.

Abstract: A flexible display device substrate and a preparation method thereof are provided. The flexible display device substrate includes a first flexible substrate, a toughening layer, a second flexible substrate, and an interweaved structure layer. The second flexible substrate is disposed on the first flexible substrate. The interweaving structure layer is disposed between the first flexible substrate and the second flexible substrate, wherein the interweaving structure layer is formed by a part of the first flexible substrate and a part of the second flexible substrate penetrating and interweaving with each other. The toughening layer is disposed at intervals between the first flexible substrate and the second flexible substrate, and the toughening layer and the interweaved structure layer are disposed alternately.

Abstract: A display apparatus includes a substrate. A first buffer layer is disposed over the substrate. The first buffer layer includes silicon nitride and has an atomic percentage of hydrogen bonded to silicon of about 0.36 to about 1.01. A thin film transistor is disposed over the first buffer layer. The thin film transistor includes an active layer. A display element is electrically connected to the thin film transistor.

Abstract: A method of making a semiconductor device includes defining a first fin structure over a major surface of a substrate, wherein the first fin includes a first material. The method includes defining a second fin structure over the major surface of the substrate. Defining the second fin structure includes forming a lower portion of the second fin structure, closest to the substrate, having the first material, and forming an upper portion of the second fin structure, farthest from the substrate, having a second material different from the first material. The method includes forming a dielectric material over the substrate and between the first and second fin structures. The method includes removing the upper portion of the second fin structure, wherein removing the upper portion of the second fin structure includes reducing a height of the second fin structure to be less than a height of the first fin structure.

Abstract: A display device and a method of driving a display device are provided. A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern, a buffer layer on the first conductive layer, a semiconductor layer including a semiconductor pattern on the buffer layer, a gate insulating layer on the semiconductor pattern, a second conductive layer including a gate electrode on the gate insulating layer, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including a first conductive pattern electrically coupling the lower light blocking pattern to the semiconductor pattern, wherein the first conductive pattern is coupled to the lower light blocking pattern through a first contact hole passing through the planarization layer and the buffer layer, and coupled to the semiconductor pattern through a second contact hole passing through the planarization layer.

Abstract: A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.

Abstract: A method for transferring a semiconductor layer from a donor substrate to a receiver substrate having an open cavity includes forming an embrittlement plane in the donor substrate, making, by bringing the donor substrate and the receiver substrate into contact, a packaging in which the cavity is buried, and separating the packaging by fracturing along the embrittlement plane. The separating causes a transfer of the semiconductor layer to the receiver substrate and a sealing of the cavity by the semiconductor layer. The method also includes, prior to making the packaging, implanting diffusing species into the donor substrate or into the receiver substrate and, subsequently to making the packaging and prior to separating the packaging, diffusing the species into the cavity.

Abstract: A display apparatus is provided which may include a substrate including a display area and a non-display area adjacent to the display area, a first thin-film transistor disposed on the substrate and including a first semiconductor layer including an oxide semiconductor material, and a second thin-film transistor disposed on the substrate and including a second semiconductor layer including a silicon semiconductor material, wherein a surface roughness of the first semiconductor layer is increased by plasma treatment. A method of manufacturing the display apparatus is also provided.

Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

Abstract: An array substrate is provided, including a base substrate, a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode that are sequentially provided, and further including a first insulating layer, a second insulating layer, a third insulating layer, at least one first via, and at least one second via. Each first via penetrates through the third insulating layer, and in each pixel unit with plural chromatic color resists, each first via is between adjacent two chromatic color resists and filled by one of the adjacent two chromatic color resists. Each second via penetrates through the second insulating layer, the at least one second via is in one-to-one correspondence with the at least one first via, each second via is filled by a chromatic color resist having a same color as that of the chromatic color resist in the corresponding first via.

Abstract: The present disclosure provides a thin film transistor (TFT) substrate and a display device, the TFT substrate includes an base substrate and a plurality of pixel units, wherein each of the pixel units includes a TFT on the base substrate, the TFT includes a source drain layer, an active layer, and a gate layer; the TFT substrate further includes a light shielding layer on a side of the source drain layer of the TFT distal to the base substrate, and an orthographic projection of the light shielding layer on the base substrate completely covers an orthographic projection of the active layer of the TFT on the base substrate, and partially covers an orthographic projection of the gate layer of the TFT on the base substrate.