Abstract: Disclosed is an organic light-emitting device including an emission layer that includes a compound satisfying conditions 5? and 6 below: 0 eV<?EST2?0.1 eV??Condition 1: ?EST>0.

Abstract: A microcavity pixel design and structure allowing for tuning the optical cavity length of the microcavity of a microcavity pixel structure. This is achieved by including an intermediate electrode in the device which has an overhang region to form a connecting area to a bottom electrode, alleviating design restrictions in material type and dimensions throughout the optical microcavity tuning process. A method for the fabrication of a multi-colored microcavity pixel array facilitating the use of blanket deposition methods for select layers within a microcavity pixel structure.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a semiconductor stack including semiconductor layers over a substrate, wherein the semiconductor layers are separated from each other and are stacked up along a direction substantially perpendicular to a top surface of the substrate; an isolation structure around a bottom portion of the semiconductor stack and separating active regions; a metal gate structure over a channel region of the semiconductor stack and wrapping each of the semiconductor layers; a gate spacer over a source/drain (S/D) region of the semiconductor stack and along sidewalls of a top portion of the metal gate structure; and an inner spacer over the S/D region of the semiconductor stack and along sidewalls of lower portions of the metal gate structure and wrapping edge portions of each of the semiconductor layers.

Abstract: A lateral bipolar junction transistor including an emitter region, base region and collector region laterally orientated over a type IV semiconductor substrate, each of the emitter region, the base region and the collector region being composed of a type III-V semiconductor material. A buried oxide layer is present between the type IV semiconductor substrate and the emitter region, the base region and the collector region. The buried oxide layer having a pedestal aligned with the base region.

Abstract: To improve an SN ratio of a photoelectric conversion element. A photoelectric conversion element (10) includes an anode (12), a cathode (16), an active layer (14) provided between the anode and the cathode, and a hole transport layer (13) provided between the anode and the active layer. The active layer includes a p-type semiconductor material, which is a polymer compound having an absorption peak wavelength of 900 nm or higher, and an n-type semiconductor material, and an energy gap between an LUMO of the n-type semiconductor material contained in the active layer and a HOMO of a hole transport material contained in the hole transport layer is less than 0.9 eV.

Abstract: A semiconductor package includes a leadframe including a die pad and a plurality of lead terminals. A vertical semiconductor device is attached on a first side by a die attach material to the die pad. A first clip is on the first vertical device that is solder connected to a terminal of the first vertical device on a second side opposite to the first side providing a first solder bonded interface, wherein the first clip is connected to at least a first of the lead terminals. The first solder bonded interface includes a first protruding surface standoff therein that extends from a surface on the second side of the first vertical device to physically contact the first clip.

Abstract: A semiconductor device includes a first conductive feature, a second conductive feature, and a first dielectric layer positioned between the first conductive feature and the second conductive feature. An etch stop layer is over the first dielectric layer. A cap layer is over the first conductive feature, the second conductive feature, and the etch stop layer.

Abstract: The application discloses a display panel, a manufacturing method of the display panel, and a display device. The display panel includes a display area and a non-display area, and includes a first substrate and a second substrate that is aligned and bonded with the first substrate. The first substrate includes a mark corresponding to the non-display area. The second substrate includes a light shielding portion corresponding to the mark, and the light shielding portion includes a blocking member corresponding to the mark.

Abstract: A flexible circuit board for a chip on film according to an embodiment includes: a substrate including a first surface and a second surface opposite to the first surface and including a chip mounting region; a circuit pattern layer disposed on the first surface; and a heat dissipation part disposed in the chip mounting region, wherein the substrate is formed with at least two or more holes that are formed in a region overlapping the heat dissipation part, and the heat dissipation part includes: a heat dissipation pattern layer disposed on the first surface; a connection layer disposed inside the hole; and a heat dissipation layer disposed on the second surface.

Abstract: The present invention provides a display device and a manufacturing method thereof, including: forming a device board; forming a color resist layer on the device board; forming a black matrix layer on the device board, wherein at least a portion of the color resist blocks is defined in a grid region in the black matrix layer, and at least a portion of an orthographic projection of the color resist blocks on the device board covers at least a portion of an orthographic projection of an adjacent part of the black matrix layer on the device board; and forming a planarization layer covering the color resist blocks and the black matrix layer.

Abstract: A display device according to an embodiment includes: a substrate; a light emitting diode; an input sensing member disposed on the light emitting diode; a color conversion layer and a light blocking member disposed on the input sensing member; an adhesive layer disposed on the color conversion layer and the light blocking member; and a window bonded to the adhesive layer, wherein a storage modulus of the adhesive layer may be 0.2 MPa or less at ?20° C., and a glass transition temperature (Tg) of the adhesive layer may be ?30° C. or less.

Abstract: Integrated circuit structures might include a semiconductor material, a first active area in the semiconductor material, a second active area in the semiconductor material, and an isolation structure comprising a dielectric material deposited in a trench formed in the semiconductor material between the first active area and the second active area. The isolation structure might further include a first edge portion extending below a surface of the semiconductor material to a first depth, a second edge portion extending below the surface of the semiconductor material to the first depth, and an interior portion between the first edge portion and the second edge portion, and extending below the surface of the semiconductor material to a second depth, less than the first depth.

Abstract: A display apparatus includes a substrate on which a central area having a display area and a peripheral area disposed around the central area are defined. The display apparatus includes a display area inorganic layer on the display area and extending to a portion of the peripheral area; and an encapsulation inorganic layer covering the display area, on the display area inorganic layer, and having an edge that is in parallel with or extending over an edge of the display area inorganic layer.

Abstract: A display device includes: an array substrate including a pixel array disposed on a display area, a first transfer wiring disposed on a peripheral area adjacent to the display area and electrically connected to the pixel array, a second transfer wiring disposed on the peripheral area adjacent to the display area and electrically connected to the pixel array, and a barrier member disposed between the first transfer wiring and the second transfer wiring, the barrier member including an inorganic insulation material; and a sealing member disposed between the array substrate and an encapsulation substrate to combine the array substrate with the encapsulation substrate, the sealing member contacting at least a portion of the first transfer wiring and the second transfer wiring.

Abstract: Embodiments described herein relate to a sub-pixel. The sub-pixel includes an anode, overhang structures, separation structures, an organic light emitting diode (OLED) material, and a cathode. The anode is defined by adjacent first pixel isolation structures (PIS) and adjacent second PIS. The overhang structures are disposed on the first PIS. The overhang structures include a second structure disposed over the first structure and an intermediate structure disposed between the second structure and the first structure. A bottom surface of the second structure extends laterally past an upper surface of the first structure. The first structure is disposed over the first PIS. Separation structures are disposed over the second PIS. The OLED material is disposed over the anode and an upper surface of the separation structures. The cathode disposed over the OLED material and an upper surface of the separation structures.

Abstract: An electronic device includes a substrate, a transistor and a doped well. The substrate includes a first region and a second region different from the first region. The transistor is disposed on the first region of the substrate. The transistor includes a first nitride semiconductor layer disposed on the substrate, and a second nitride semiconductor layer disposed on the first nitride semiconductor layer. The second nitride semiconductor layer has a bandgap greater than that of the first nitride semiconductor layer. The doped well is disposed in the second region.

Abstract: An electronic component includes a device die and a substrate. The device die includes conductive contacts with conductive pillars conductively affixed to conductive contact. The conductive pillars include a cavity formed in an end of the conductive pillar opposite the conductive contact. The substrate includes of conductive pads that are each associated with one of the conductive contacts. The conductive pads include a conductive pad conductively affixed to the substrate, and a conductive ring situated within a cavity in the end conductive rings have a capillary formed along an axis of the conductive ring. A solder material fills the capillary of each of the conductive rings and the cavity formed in the end of the associated conductive pillars to form a conductive joint between the pillars and the conductive pads.

Abstract: A display panel, a manufacture method thereof and a display device are provided. The display panel includes multiple subpixel zones and a reset signal line pattern, an initialization signal line pattern and a conductive connecting part pattern in each of the subpixel zones. The initialization signal line pattern includes a first body portion and a first protruding portion coupled to each other. The orthographic projection of the first body portion onto the base is between the orthographic projection of the first protruding portion onto the base and the orthographic projection of the reset signal line pattern onto the base. The orthographic projection of a first end portion of the conductive connecting part pattern onto the base and the orthographic projection of the first protruding portion onto the base have a first overlapped region.

Abstract: An OLED display device includes a substrate, a pixel defining layer disposed on the substrate and provided with first openings, a black bank layer disposed on the pixel defining layer and provided with second openings corresponding to the first openings, a first thin film encapsulation sublayer, and color resist layers. A width of the second openings is greater than a width of the first openings. Each part of the pixel defining layer adjacent to the first openings and each corresponding part of the black bank layer adjacent to the second openings form a stepped structure. The first thin film encapsulation sublayer covers the black bank layer, the pixel defining layer, and the substrate. Parts of the first thin film encapsulation sublayer corresponding to the stepped structures have a stepped shape. The color resist layers are disposed on parts of the first thin film encapsulation sublayer in the first openings.

Abstract: A display panel and a method for manufacturing the same are provided. The display panel comprises a thin film transistor array substrate, a storage capacitor, and a light-emitting element, wherein the thin film transistor array substrate comprises a driving thin film transistor and a switching thin film transistor, the driving thin film transistor and the switching thin film transistor are electrically connected, the driving thin film transistor and the light-emitting element are electrically connected, and the storage capacitor comprises a conductive portion of a first active layer of the switching thin film transistor and an anode of the light-emitting element.