Abstract: A device includes a plurality of active areas, a plurality of gates, and a plurality of conductors. The active areas are elongated in a first direction. The gates are elongated in a second direction. The conductors are disposed between the active areas and elongated in the second direction. Each one of the conductors has an overlap with at least one corresponding gate of the gates to form at least one capacitor.

Abstract: The present application discloses a pixel arrangement structure and a display apparatus, the pixel arrangement structure includes a plurality of pixel units, the pixel unit includes a first sub-pixel group, a common sub-pixel group, and a second sub-pixel group sequentially arranged in row direction, the first sub-pixel group includes a first red sub-pixel and a first green sub-pixel arranged in a column direction, the common sub-pixel group includes a dark blue sub-pixel and a light blue sub-pixel arranged in a column direction, the second sub-pixel group includes a second red sub-pixel and a second green sub-pixel arranged in a column direction, the first sub-pixel group and the common sub-pixel group form a first pixel, and the second sub-pixel group and the common sub-pixel group form a second pixel. The present application can increase the density of the sub-pixel arrangement, thereby increasing the resolution of the display apparatus.

Abstract: A compound semiconductor transistor may include a channel layer. The compound semiconductor transistor may also include a dielectric layer on the channel layer. The compound semiconductor transistor may further include a gate. The gate may include a vertical base portion through the dielectric layer and electrically contacting the channel layer. The gate may also include a head portion on the dielectric layer and electrically coupled to the vertical base portion of the gate.

Abstract: A transparent display device according to example embodiments includes a substrate having a pixel area and a transmission area, a pixel circuit on the pixel area of the substrate, an insulation structure on the substrate to cover the pixel circuit, a first electrode on the pixel area of the substrate, the first electrode being at least partially penetrated the insulation structure and electrically connected to the pixel circuit, a display layer on the first electrode, a second electrode facing the first electrode and covering the display layer, and an anti-diffraction layer on the substrate, the anti-diffraction layer at least partially overlapping the transmission area and including a plurality of nano wires.

Abstract: To reinforce power supply wirings without sacrificing the interconnectivity of semiconductor devices. When three wirings are formed in parallel in the same wiring layer and the center wiring among them is shorter than the outer wirings, a projecting portion integrated into the outer wiring is formed utilizing a free space remaining on the extension of the center wiring. For example, when the outer wirings are used as power supply wirings, the power supply wirings can be reinforced by adding the projecting portion. At this time, because the projecting portion is arranged in the free space, the interconnectivity is not sacrificed.

Abstract: The present invention provides a manufacture method of an IPS TFT-LCD array substrate and an IPS TFT-LCD array substrate. In the manufacture method of the IPS TFT-LCD array substrate, the pixel electrode and the common electrode are manufactured with the same transparent conductive layer, and a plurality of strip shape channels parallel with one another in the pixel area are provided on the insulation protective layer below the pixel electrode and the common electrode, and the pixel electrode and the common electrode are alternately distributed along bosses at two sides of the channels and extend to side walls of the channels, and thus to increase the areas of the pixel electrode and the common electrode in the direction vertical to the substrate, and to increase the horizontal electrical field, and meanwhile to increase the storage capacitor, and thus to promote the display quality of the liquid crystal panel.

Abstract: A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises one or more lateral devices that are electrically active along a top surface of the semiconductor device.

Abstract: An organic light emitting diode display includes a substrate, a plurality of pixels disposed on the substrate, and a plurality of transmitting windows configured to transmit light therethrough. The plurality of transmitting windows is spaced apart from the plurality of pixels. Each of the plurality of pixels includes a transistor and a capacitor. The transistor includes a light-blocking electrode disposed on the substrate and a plurality of electrode members disposed at different layers on the light-blocking electrode. The capacitor includes a first capacitor electrode disposed on a same layer as the light-blocking electrode, and a second capacitor electrode disposed on a same layer as a first one of the plurality of electrode members to overlap the first capacitor electrode.

Abstract: An organic light emitting display device is discussed. The organic light emitting display device according to an embodiment includes an organic light emitting diode layer provided at an active area of a base substrate; an encapsulation layer encapsulating the organic light emitting diode layer to protect the organic light emitting diode layer; an adhesive layer in the encapsulation layer and provided on the organic light emitting diode layer to cover upper and side surfaces of the organic light emitting diode layer; and an encapsulation substrate in the encapsulation layer and provided on the adhesive layer. The encapsulation substrate is provided to have different thicknesses at the active area and outside the active area.

Abstract: A display apparatus including a substrate, a display portion disposed on an active area defined at the substrate, a buffer layer disposed on the active area and a pad area defined at the substrate, a touch sensing portion disposed on the buffer layer, and a pad portion disposed between the pad area and the buffer layer. The touch sensing portion includes a first pad pattern, a middle layer disposed on the first pad pattern, and a second pad pattern disposed on the middle layer. The first pad pattern is connected to the pad portion through a first contact hole defined on the pad portion in the buffer layer. The second pad pattern is connected to the first pad pattern through a second contact hole defined on the first contact hole in the middle layer.

Abstract: An OLED pixel arrangement structure includes multiple first sub-pixels, multiple second sub-pixels and multiple third sub-pixels. Four adjacent ones of the first sub-pixels and four adjacent ones of the second sub-pixels are alternately arranged and surround one of the third sub-pixels. Centers of the four adjacent first sub-pixels and centers of the four adjacent second sub-pixels form vertexes of a virtual octagonal cell, and the virtual octagonal cell has at least two orthogonal symmetry axes, a basic pixel unit is formed by the first sub-pixels and the second sub-pixels forming the virtual octagonal cell and a part of the third sub-pixel inside the virtual octagonal cell which are located on one side of one of the at least two orthogonal symmetry axes of the virtual octagonal cell. A center of the third sub-pixel coincides with a center of the virtual octagonal cell.

Abstract: A manufacturing method of a display device includes: forming, in a resin layer including a display area where a plurality of lower electrodes is formed and a peripheral area surrounding the display area, a band-like groove which divides the resin layer in a form of surrounding the display area; forming an organic electroluminescence layer including a light emitting layer, on the resin layer and inside the band-like groove in such a way as to be placed on the plurality of lower electrodes; irradiating the organic electroluminescence layer with a pulse laser and thus eliminating the organic electroluminescence layer in such a way that a part of the organic electroluminescence layer is left in a shape of an island at least on a bottom surface of the band-like groove and that the bottom surface of the band-like groove is continuously exposed in the form of surrounding the display area.

Abstract: A display device includes: a plurality of pixels each including a driving thin film transistor and a storage capacitor, wherein each of the pixels further includes: a driving semiconductor layer including a driving channel region, a driving source region, and a driving drain region; a first electrode layer, a portion of the first electrode layer overlapping the driving channel region; a second electrode layer overlapping the first electrode layer; a node connection line having a first side connected to the first electrode layer; a pixel electrode overlapping the first electrode layer and the second electrode layer; and a shielding layer between the first electrode layer and the pixel electrode and overlapping the first electrode layer, the node connection line, and the pixel electrode.

Abstract: An object of the present invention is to provide an organic electroluminescent element containing: a plurality of light emitting units interposed between a pair of an anode and a cathode; and a charge generating unit formed between the light emitting units, wherein a light emitting layer of a light emitting unit located in an N-th order from the anode and a light emitting layer of a light emitting unit located in an (N+1)-th order from the anode each contain an emission dopant to emit light of the same emission color; and a largest maximum emission wavelength in a photoluminescent spectrum of the emission dopant in the light emitting layer of the N-th light emitting unit is shorter than a largest maximum emission wavelength in a photoluminescent spectrum of the emission dopant in the light emitting layer of the (N+1)-th light emitting unit.

Abstract: Disclosed is an organic light emitting display device. The organic light emitting display device includes an emission part which is disposed between an anode and a cathode and includes an emission layer. The emission part includes at least two emission layers emitting lights of different colors and a recombination zone movement prevention layer. The at least two emission layers each includes at least one host and at least one dopant, and the recombination zone movement prevention layer is disposed on a specific emission layer among the at least two emission layers.

Abstract: A display apparatus including a substrate; a plurality of unit displays disposed over the substrate, each of the unit displays including a thin film transistor including at least one inorganic layer, a display device electrically connected to the thin film transistor, and a planarization layer between the thin film transistor and the display device; and an encapsulation layer encapsulating the plurality of unit displays, wherein the planarization layer of each of the unit displays includes a spaced area exposing a surface of the at least one inorganic layer between the plurality of unit displays, and wherein the encapsulation layer contacts the at least one inorganic layer in the spaced area.

Abstract: A plurality of light emitters emitting different colors of light in an organic light-emitting device, each light emitter including a first electrode, a first charge injection/transport layer, an organic light-emitting layer, an intermediate layer, a second charge injection/transport layer, and a second electrode, above a substrate. The intermediate layer includes a fluoride of an alkali metal or an alkaline earth metal. The second charge injection/transport layer includes an alkali metal or an alkaline earth metal. Of the first electrode and the second electrode, one electrode is light reflective and the other electrode is light transmissive. Of the first charge injection/transport layer and the second charge injection/transport layer, one charge injection/transport layer is disposed between the organic light-emitting layer and the one electrode, and thickness of the one charge injection/transport layer is different between a first light emitter and a second light emitter.

Abstract: The present invention relates to a method for manufacturing a light extraction substrate for an organic light emitting diode, a light extraction substrate for an organic light emitting diode, and an organic light emitting diode comprising same, and more specifically, to a method for manufacturing a light extraction substrate for an organic light emitting diode, a light extraction substrate for an organic light emitting diode, and an organic light emitting diode comprising same, the method capable of complicating or diversifying the path of a light that is emitted by forming cracks on a matrix layer that can induce scattering of the light emitted from the organic light emitting diode, thereby further improving light extraction efficiency of the organic light emitting diode.

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

Abstract: A display apparatus including a first conductive layer; a first insulating layer including a first opening exposing a first upper surface of the first conductive layer and covering at least a part of an upper edge of the first conductive layer, wherein the first upper surface of the first conductive layer includes a center portion of an upper surface of the first conductive layer; a second conductive layer on a part of the first upper surface of the first conductive layer and on the first insulating layer; and a second insulating layer including a second opening exposing a second upper surface of the second conductive layer and covering a part of an upper edge of the second conductive layer, wherein the second upper surface of the second conductive layer includes a center portion of the upper surface of the second conductive layer and the second opening has an area that is less than that of the first opening.