Abstract: There is disclosed acoustic resonators and filter devices. An acoustic resonator device includes a piezoelectric plate, and an interdigital transducer (IDT) formed on a front surface of the piezoelectric plate. The IDT includes interleaved fingers. At least one of the interleaved fingers includes a first layer adjacent the piezoelectric plate and a second layer over the first layer, wherein a width of the first layer is constant, and wherein a width of the second layer varies along a length of the at least one interleaved finger.

Abstract: Methods of manufacturing an acoustic wave device are disclosed. An anti-reflection layer can be formed over a conductive layer that is over a piezoelectric layer. The conductive layer can include aluminum, for example. The anti-reflection layer can remain distinct from the conductive layer after a heating process. A photolithography process can pattern an interdigital transducer of the acoustic wave device from one or more interdigital transducer electrode layers that include the conductive layer. The anti-reflection layer can reduce reflection from the conductive layer during the photolithography process.

Abstract: A filter includes an additional circuit including first and second IDT electrode groups connected in multiple stages between first and second input/output terminals, the first IDT electrode group includes first and second IDT electrodes side by side in a propagation direction of an acoustic wave, and the second IDT electrode group includes third and fourth IDT electrodes side by side in the propagation direction. One end of each of the first and second IDT electrodes is respectively connected to the first and second input/output terminals. Other ends of the first and second IDT electrodes are connected in common and to a ground. One ends of the third and fourth IDT electrodes are connected in common. Other ends of the third and fourth IDT electrodes are connected in common. The additional circuit is connected in parallel with at least a portion of a filter circuit.

Abstract: The present application provides a trisection power divider with isolation and a microwave transmission system, where the divider includes a first hybrid ring coupler with a distribution ratio of 1:2 and a second hybrid ring coupler with a distribution ratio of 1:1; a first port of the first hybrid ring coupler is a signal input port; a second port of the first hybrid ring coupler is connected with a first port of the second hybrid ring coupler; a second port of the second hybrid ring coupler, a third port of the second hybrid ring coupler and a third port of the first hybrid ring coupler are three signal output ports of the divider; and the second port of the first hybrid ring coupler is a port with high power.

Abstract: An inductor according to an embodiment of the present invention comprises: a first magnetic body having a toroidal shape, and including a ferrite; and a second magnetic body disposed on an outer circumferential surface or an inner circumferential surface of the first magnetic body, wherein the second magnetic body includes: resin material and a plurality of layers of metal ribbons wound along the circumferential direction of the first magnetic body, wherein the resin material comprises a first resin material disposed to cover an outer surface of the plurality of layers of metal ribbons, and a second resin material disposed in at least a part of a plurality of layers of interlayer spaces.

Abstract: An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity Vsi=(V1)1/2 of propagation through silicon or higher than the acoustic velocity Vsi, where Vsi is specified by V1 among solutions V1, V2, and V3 with respect to x derived from Ax3+Bx2+Cx+D=0.

Abstract: A high frequency multilayer filter may include a plurality of dielectric layers and a signal path having an input and an output. The multilayer filter may include an inductor including a conductive layer formed over a first dielectric layer. The inductor may be electrically connected at a first location with the signal path and electrically connected at a second location with at least one of the signal path or a ground. The multilayer filter may include a capacitor including a first electrode and a second electrode that is separated from the first electrode by a second dielectric layer. The multilayer filter has a characteristic frequency that is greater than about 6 GHz.

Abstract: An LC composite component includes a multilayer body including insulating base members that are laminated and include insulating base members on which conductor patterns are provided. Capacitor conductor patterns are provided on insulating base members different from an insulating base member on which a coil conductor pattern is provided, and each include an extending portion overlapping with a line segment connecting a center of a first terminal and a center of a second terminal in a shortest distance as viewed in the lamination direction and projecting portions projecting in directions different from the direction of the line segment, and the projecting portions overlap with linear portions of the coil conductor pattern without overlapping with bent portions thereof as viewed in the lamination direction.

Abstract: A planar radio frequency filter is described, comprising a frequency selective surface (FSS) applied to a substrate. The filter blocks the transmission of electromagnetic waves in at least two independent radio frequency bands. The FSS comprises a periodic array of multipole inclusions with skewed or forked poles to increase packing density. The inclusions comprise four or six primary poles to generate the lower frequency resonance and an additional four or six secondary poles to generate the higher frequency resonance. The secondary inclusions are located between the primary inclusions to tune the higher resonance frequency. The FSS incorporates overlapping parallel conducting segments that overlap to provide an inductive-capacitive path between adjacent inclusions.

Abstract: When a thick frequency adjustment metal film of a tuning fork-type vibration piece is irradiated with a beam on a wafer for frequency coarse adjustment, projections are possibly formed on a roughened end of the frequency adjustment metal film. Such projections are pressurized and pushed down not to chip off under any impact, so that the risk of frequency fluctuations is suppressed.

Abstract: A balun comprising a three-dimensional (3D) printed base. In one embodiment the balun further comprises a piece of copper tape adhered to an outer surface of the 3D printed base.

Abstract: An acoustic wave device includes a piezoelectric substrate including a crystal axis and an IDT electrode. When an acoustic wave propagation direction is a first direction and a direction perpendicular to the first direction is a second direction, the crystal axis of the piezoelectric substrate is inclined toward the second direction with respect to the thickness direction. The IDT electrode includes first and second electrode fingers interdigitated with each other. The portion where the first and second electrode fingers overlap in the first direction is a crossing region. The crossing region includes a center region that is centrally located in the second direction and first and second low-acoustic-velocity regions that are located on both sides of the center region in the second direction and in which the acoustic velocity is lower than the acoustic velocity in the center region. The first and second low-acoustic-velocity regions are asymmetrical.

Abstract: A single-crystal bulk acoustic wave resonators with better performance and better manufacturability and a process for fabricating the same are described. A low-acoustic-loss layer of one or more single-crystal and/or poly-crystal piezoelectric materials is epitaxially grown and/or physically deposited on a surrogate substrate, followed with the formation of a bottom electrode and then a support structure on a first side of the piezoelectric layer. The surrogate substrate is subsequently removed to expose a second side of the piezoelectric layer that is opposite to the first side. A top electrode is then formed on the second side of the piezoelectric layer, followed by further processes to complete the BAW resonator and filter fabrication using standard wafer processing steps. In some embodiments, the support structure has a cavity or an acoustic mirror adjacent the first electrode layer to minimize leakage of acoustic wave energy.

Abstract: Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least a portion of an edge of the diaphragm is at an oblique angle to the fingers. The IDT includes a busbar disposed parallel to the edge of the diaphragm such that the interleaved fingers extend at the oblique angle from the busbar.

Abstract: Disclosed herein is a common mode filter that includes a winding core part and first and second wires wound in a same direction around the winding core part. The first and second wires constitute a first winding block on one endmost side in an axial direction of the winding core part, a second winding block on other endmost side in the axial direction of the winding core part, and a third winding block positioned between the first and second winding blocks. The second winding block is a winding block at an odd-numbered position counted from the first winding block. The first and second wires cross each other in an area between the first and third winding blocks and in an area between the second and third winding blocks.

Abstract: Methods of making acoustic resonators and filter devices. A method includes attaching a piezoelectric plate to a substrate, and forming a conductor pattern including an interdigital transducer (IDT) on a portion of the piezoelectric plate that forms a diaphragm spanning a cavity such that interleaved fingers of the IDT are on the diaphragm. The substrate and the piezoelectric plate are the same material.

Abstract: An electronic component includes a package substrate extending in a longitudinal direction, and chip components disposed along the longitudinal direction of the package substrate and each connected to the package substrate by a bump. A height of a bump connecting at least one chip component disposed at an end portion in the longitudinal direction among the chip components and the package substrate is greater than a height of a bump connecting at least one chip component disposed inward relative to the end portion in the longitudinal direction among the chip components and the package substrate.

Abstract: An LC filter includes a first electrode connected to a first via conductor between two ends of the first via conductor, a second electrode connected to a second via conductor between two ends of the second via conductor, a third electrode connected to a third via conductor between two ends of the third via conductor, and a fourth electrode connected to a fourth via conductor between two ends of the fourth via conductor. In a plan view viewed from the laminating direction, the second via conductor and the fourth via conductor are disposed on two sides of a virtual line connecting the first via conductor and the third via conductor, respectively. The second electrode faces the first electrode and the third electrode.

Abstract: First and second coils have winding axes in a laminated direction of base material layers and are magnetically coupled to each other. First and second capacitors are positioned in the laminated direction on layers different from layers on which the first and second coils are provided. The first and second coils are connected so that the winding directions of the first and second coils are opposite. The second capacitor is connected in parallel to a series circuit of the first coil and the second coil. The first capacitor is connected between a position where the first coil is connected to the second coil and a reference potential electrode. Mutual inductance caused by coupling between the first and second coils and the first capacitor provides a first attenuation pole and a parallel connection circuit of the series circuit and the second capacitor provides a second attenuation pole.

Abstract: An adjustable inductor including a core defining a plurality of gaps, a material positioned in the gaps, at least one winding wound on the core, a force-applying structure, and a film substantially covering the adjustable inductor. The force-applying structure is operable to apply a force to the core to adjust the gaps and thereby an inductance of the adjustable inductor. The film is configured to prevent movement of force-applying structure when below a predetermined temperature threshold, and allow movement of the force-applying structure when above the predetermined threshold.