Abstract: A method for rapid switching between operating modes with differing beam currents in a charged particle system is disclosed. Many FIB milling applications require precise positioning of a milled pattern within a region of interest (RoI). This may be accomplished by using fiducial marks near the RoI, wherein the FIB is periodically deflected to image these marks during FIB milling. Any drift of the beam relative to the RoI can then be measured and compensated for, enabling more precise positioning of the FIB milling beam. It is often advantageous to use a lower current FIB for imaging since this may enable higher spatial resolution in the image of the marks. For faster FIB milling, a larger beam current is desired. Thus, for optimization of the FIB milling process, a method for rapidly switching between high and low current operating modes is desirable.

Abstract: A method for producing a metal film of a touch panel provided by the present invention has the steps of: preparing a base plate; coating a mask on the surface of the base plate; using a sputtering process to sputter a metal material on the part of the base plate where is not covered by the mask; removing the mask so as to form a metal film and a hollow area; and using a laser engraving process to remove an over coating area that is produced by the metal film or the hollow area so as to produce the metal film.

Abstract: According to one embodiment, a magnetic recording medium includes a substrate, an auxiliary layer formed on the substrate, and at least one perpendicular magnetic recording layer formed on the auxiliary layer. The perpendicular magnetic recording layer includes a magnetic dot pattern. The perpendicular magnetic recording layer is made of an alloy material containing one element selected from iron and cobalt, and one element selected from platinum and palladium. This alloy material has the L10 structure, and is (001)-oriented. The auxiliary layer includes a dot-like first region covered with the magnetic dot pattern, and a second region not covered with the magnetic dot pattern. The first region is made of a (100)-oriented nickel oxide. The second region contains nickel used in the first region as a main component.

Abstract: A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and further comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.

Abstract: Disclosed is a coating material for parts of an engine exhaust system and a method for manufacturing the same. The coating material includes a second junction layer made of CrN or Ti(C)N, a support layer made of TiAlN/CrN disposed on a surface of the second junction layer, and a functional layer made of TiAlN/CrSiN or TiAlN/CrSiCN disposed on a surface of the support layer. The coating material improves abrasion resistance and seizure resistance of the parts of the engine exhaust system.

Abstract: The present invention provides a film forming apparatus and a film forming method which are unlikely to be affected by changes in size and shape of a shield board caused by a recovery process. A film forming apparatus includes a shield board surrounding a sputtering space between a process-target substrate on a stage and a target facing each other in a vacuum chamber, and forms a film on the process-target substrate by causing at least one kind of reactive gas and a film forming material to react with each other. The film forming apparatus is configured to control a ratio of the flow rate of the gas to be introduced into the sputtering space to the flow rate of the gas to be introduced into a space between an inner wall of the vacuum chamber and the shield board, based on a pressure value of the sputtering space measured by pressure detection means.

Abstract: The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.

Abstract: A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.

Abstract: An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.

Abstract: Aluminum or aluminum alloy sputter targets and methods of making same are provided. The pure aluminum or aluminum alloy is mechanically worked to produce a circular blank, and then the blank is given a recrystallization anneal to achieve desirable grain size and crystallographic texture. A 10-50% additional strain is provided to the blank step after the annealing to increase the mechanical strength. Further, in a flange area of the target, the strain is greater than in the other target areas with the strain in the flange area being imparted at a rate of about 20-60% strain. The blank is then finished to form a sputtering target with desirable crystallographic texture and adequate mechanical strength.

Abstract: In a method of manufacturing a magnetic disk including at least a magnetic recording layer on a substrate 1 and used for vertical magnetic recording, in a step of forming, on the substrate 1, the magnetic recording layer composed of a ferromagnetic layer 5 having a granular structure and an exchange energy control layer 7 constituted by a laminated layer formed on the ferromagnetic layer 5, at least the exchange energy control layer 7 is formed through sputtering in an atmosphere of a rare gas having a greater mass than an argon gas. The rare gas having a greater mass than the argon gas is a krypton (Kr) gas, for example. The exchange energy control layer 7 is a laminated layer composed of a first layer containing Co or a Co-alloy and a second layer containing palladium (Pd) or platinum (Pt), for example.

Abstract: Provided are a film-forming apparatus and a film-forming method capable of preventing complication of an apparatus mechanism in formation of a thin film of multiple materials by sputtering to simplify the apparatus mechanism and preventing an increase in an apparatus cost. The film-forming apparatus includes a vacuum chamber, a substrate holder for holding a substrate, cathode mechanisms for supporting targets respectively so that the targets can be opposed to the substrate in the vacuum chamber, and shutters movable forward and backward individually between the targets made of different materials and the substrate to block or pass film-forming particles generated from the targets. At least one of the shutters is formed of a target material different from those for the targets so that the at least one of the shutters is configured as a shutter that also functions as a target.

Abstract: Provided is a substrate processing apparatus including an openable and closable lid and being capable of precisely controlling a gap between multiple shields. The substrate processing apparatus includes: an openable and closable lid provided on an opening of a chamber; a first shield provided on a surface of the lid at the chamber side and having an insertion hole; an insertion section fixed to the lid while inserted through the insertion hole, and configured to support the first shield in a manner movable within a predetermined distance; a restriction section provided on an end portion of the insertion section and configured to restrict the movement of the first shield; and biasing means configured to bias the first shield to a member provided inside the chamber when the lid is closed.

Abstract: Vacuum deposition apparatus including cathodic arc source for application of coatings on the substrate. Cathodic arc source comprises focusing magnetic source for generating magnetic field, arc cathode containing film forming material and anode. The focusing magnetic source is placed between arc cathode and substrate. Arc spot generated on the cathode evaporation surface is kept by the magnetic field lines in the place where the magnetic field lines are perpendicular to the cathode surface.

Abstract: Provided is a cylindrical sputtering target which attains a high production yield in a film-forming process even when a film is formed by sputtering with a long cylindrical sputtering target constituted by a plurality of cylindrical target materials. A multi-divided cylindrical sputtering target formed by bonding a cylindrical base and a plurality of cylindrical target materials together with a bonding material has a divided portion where adjacent cylindrical target materials are arranged with a gap therebetween, while outer peripheral faces of the adjacent cylindrical target materials have a step of 0.5 mm or less therebetween in the divided portion. Such a target is obtained by fixing the cylindrical target materials with reference to the outer peripheral faces of the cylindrical target materials when arranging the cylindrical target materials with reference to the cylindrical base.

Abstract: A sputtering target is provided that includes a planar backing plate and a target material formed over the planar backing plate and including an uneven sputtering surface including thick portions and thin portions and configured in conjunction with a sputtering apparatus such as a magnetron sputtering tool with a fixed magnet arrangement. The uneven surface is designed in conjunction with the magnetic fields that will be produced by the magnet arrangement such that the thicker target portions are positioned at locations where target erosion occurs at a high rate. Also provided is the magnetron sputtering system and a method for utilizing the target with uneven sputtering surface such that the thickness across the target to become more uniform in time as the target is used.

Abstract: A structure of reaction chamber of semiconductor sputtering equipment is disclosed, including a chamber case, an elevation platform, a plurality of target fixing elements, a carrier ring and a covering protective ring, wherein the contact surface of the target fixing element, the ring-shaped protruding surface of the carrier ring and the attachment surface of the covering protective ring are all coarse surfaces with uneven patterns. As such, during sputtering, the contact surface, ring-shaped protruding surface and attachment surface can withstand the deposition thickening and extend the cycle of cleaning components and life span so as to improve utilization rate of the equipment and reduce the manufacturing cost.

Abstract: A method of deposition is provided in which a deposition operation can be immediately performed when a workpiece for deposition is carried into a deposition chamber irrespective of a shape or a structure of the workpiece for deposition. The workpiece for deposition is integrally molded with an assisting member, which is configured to maintain the workpiece for deposition in a predetermined orientation such that a deposition surface or a deposition portion thereof faces a target material when the workpiece for deposition is carried into a deposition chamber and is placed on a deposition stand, when the workpiece for deposition is injection-molded; and the workpiece for deposition is carried into the deposition chamber and is deposited.

Abstract: An apparatus includes a plurality of target electrodes having attachment surfaces, a substrate holder, a first shutter member provided between the plurality of target electrodes and the substrate holder and having a plurality of openings, a first separating portion disposed between the openings of the first shutter member on its surface of the target electrode side, and a second separating portion disposed between the first shutter member and the target electrodes. The first shutter member is driven so as to bring the first separating portion and the second separating portion toward each other so that an indirect path can be formed between the first separating portion and the second separating portion, and driven so as to bring the first separating portion and the second separating portion away from each other so that the first shutter plate can be rotated.

Abstract: An object is to provide a method of manufacturing a lithium-ion secondary battery suitable for mass production. A lithium-ion secondary battery is manufactured in such a manner that a positive electrode layer is formed on a base including a plane by chemical vapor deposition which is specifically metal-organic chemical vapor deposition, an electrolyte layer is formed on the positive electrode layer, and a negative electrode layer is formed on the electrolyte layer. The positive electrode layer is formed with a MOCVD apparatus. The MOCVD apparatus is an apparatus with which a liquid or a solid of an organic metal raw material is vaporized to produce a gas and the gas is reacted to undergo pyrolysis so that a film is formed. By forming all the layers using sputtering, evaporation, or chemical vapor deposition, a solid lithium-ion secondary battery can also be realized.