Patents Examined by Rosemary Ashton
  • Radiation sensitive material and method for forming pattern
    Patent number: 6790589
    Abstract: A radiation sensitive material comprising a copolymer including itaconic anhydride and methods of using such radiation sensitive materials in methods for forming a pattern.
    Type: Grant
    Filed: December 21, 2001
    Date of Patent: September 14, 2004
    Assignee: Fujitsu Limited
    Inventors: Satoshi Takechi, Makoto Takahashi, Yuko Kaimoto
  • Fluorinated polymers, photoresists and processes for microlithography
    Patent number: 6790587
    Abstract: Fluorinated polymers, photoresists and associated processes for microlithography are described. These polymers and photoresists are comprised of a fluoroalcohol functional group which simultaneously imparts high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparecy, particularly at short wavelengths, e.g., 157 nm, which makes them highly useful for lithography at these short wavelengths.
    Type: Grant
    Filed: October 17, 2001
    Date of Patent: September 14, 2004
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Andrew Edward Feiring, Jerald Feldman, Frank Leonard Schadt, III
  • Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices
    Patent number: 6787288
    Abstract: The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.
    Type: Grant
    Filed: November 12, 2002
    Date of Patent: September 7, 2004
    Assignee: Fujitsu Limited
    Inventors: Koji Nozaki, Takahisa Namiki, Ei Yano, Junichi Kon, Miwa Kozawa
  • Positive-working resist composition
    Patent number: 6777160
    Abstract: A positive-working resist composition comprising (A) a specific resin which has an aliphatic cyclic hydrocarbon group and enhances in the dissolution rate in an alkaline developing solution by an action of an acid, and (B) a specific compound generating an acid by irradiation of actinic ray or radiation. The composition is excellent in the resolving power and the exposure margin, and can be suitably used for micro-photofabrication using far ultraviolet rays, particularly ArF eximer laser beams.
    Type: Grant
    Filed: March 11, 2002
    Date of Patent: August 17, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Kenichiro Sato, Kunihiko Kodama
  • Lower layer resist composition for silicon-containing two-layer resist
    Patent number: 6777161
    Abstract: To provide a lower layer resist composition for a silicon-containing two-layer resist, which is excellent in the dry etching resistance and film thickness uniformity. A lower layer resist composition for a silicon-containing two-layer resist, comprising (a) a phenol-based polymer, (b) a compound capable of generating a sulfonic acid at a temperature of 100° C. or more, (c) a phenol-based acid crosslinking agent having two or more benzene rings and capable of crosslinking with the polymer under the action of an acid, and (d) a solvent.
    Type: Grant
    Filed: April 10, 2002
    Date of Patent: August 17, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Shoichiro Yasunami, Kazuyoshi Mizutani
  • Method for forming polyimide pattern using photosensitive polyimide and composition for use therein
    Patent number: 6777159
    Abstract: This invention relates to a photosensitive polyimide material having positive-type or negative-type photosensitivity, which may be developed with a high resolution with an irradiation energy having short wavelength such as ultraviolet light or electron beam. The positive-type photosensitive polyimide composition comprising a solvent-soluble polyimide which shows positive-type photosensitivity in the presence of a photoacid generator, which is obtained by polycondensation of at least one aliphatic tetracarboxylic dianhydride and/or alicyclic tetracarboxylic dianhydride and at least one aliphatic diamine and/or alicyclic diamine and/or diaminosiloxane; and the photoacid generator. Since the polyimide has negative-type photosensitivity when irradiated with electron beam in the absence of a photoacid generator, a method for forming negative-type polyimide pattern using the polyimide is also provided.
    Type: Grant
    Filed: March 18, 2002
    Date of Patent: August 17, 2004
    Assignees: PI R&D Co., Ltd., The National Institute of Advanced Industrial Science and Technology
    Inventors: Hiroshi Itatani, Shunichi Matsumoto, Tarou Itatani, Tsunenori Sakamoto, Sucheta Gorwadkar, Masanori Komuro
  • Copolymers and photoresist compositions comprising same
    Patent number: 6777157
    Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.
    Type: Grant
    Filed: May 9, 2000
    Date of Patent: August 17, 2004
    Assignee: Shipley Company, L.L.C.
    Inventors: George G. Barclay, Stefan J. Caporale, Wang Yueh, Zhibiao Mao, Joseph Mattia
  • Reduction of inorganic contaminants in polymers and photoresist compositions comprising same
    Patent number: 6773872
    Abstract: The present invention provides polymers which are substantially or completely free of inorganic contaminants and the use of such polymers as a resin component for photoresist compositions, particularly chemically-amplified positive-acting resists. Polymers of the invention also are suitable for use as a resin component for antireflective coating compositions (ARCs). More particularly, the invention provides methods for reducing such contaminants in polymerization initiators, particularly free radical initiators.
    Type: Grant
    Filed: December 27, 2001
    Date of Patent: August 10, 2004
    Assignee: Shipley Company, L.L.C.
    Inventors: Dana A. Gronbeck, Suzanne Coley, Chi Q. Truong, Ashish Pandya
  • Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices
    Patent number: 6773867
    Abstract: The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.
    Type: Grant
    Filed: November 12, 2002
    Date of Patent: August 10, 2004
    Assignee: Fujitsu Limited
    Inventors: Koji Nozaki, Takahisa Namiki, Ei Yano, Junichi Kon, Miwa Kozawa
  • Alkylsulfonyloximes for high-resolution i-line photoresists of high sensitivity
    Patent number: 6770420
    Abstract: The invention describes the use of oxime alkyl sulfonate compounds of formula 1 R0 is either an R1—X group or R2; X is a direct bond, an oxygen atom or a sulfur atom; R1 is hydrogen, C1-C4alkyl or a phenyl group which is unsubstituted or substituted by a substituent selected from the group consisting of chloro, bromo, C1-C4alkyl and C1-C4-alkyloxy; R2 is hydrogen or C1-C4alkyl; and R3 is straight-chain or branched C1-C12alkyl which is unsubstituted or substituted by one or more than one halogen atom; as photosensitive add generator in a chemically amplified photoresist which is developable in alkaline medium and which is sensitive to radiation at a wavelength of 340 to 390 nanometers and correspondingly composed positive and negative photoresists for the above-mentioned wavelength range.
    Type: Grant
    Filed: July 2, 2003
    Date of Patent: August 3, 2004
    Assignee: Ciba Specialty Chemicals Corporation
    Inventors: Kurt Dietliker, Martin Kunz, Hitoshi Yamato, Christoph De Leo
  • Negative resist composition, process for forming resist patterns, and process for manufacturing electron device
    Patent number: 6770417
    Abstract: A negative resist composition comprises at least a constituent component which has a vinyl ether structure protected with an acetal in a molecule thereof. In the formation of negative resist patterns, an aqueous basic solution can be used without swelling.
    Type: Grant
    Filed: August 24, 2001
    Date of Patent: August 3, 2004
    Assignee: Fujitsu Limited
    Inventors: Koji Nozaki, Ei Yano, Miwa Kozawa
  • Antireflective coating compositions
    Patent number: 6767689
    Abstract: Antireflective compositions are provided that contain an ionic thermal acid generator material. Use of such a thermal acid generator material can significantly increase the shelf life of solutions of antireflective compositions in protic media. Antireflective compositions of the invention can be effectively used at a variety of wavelengths used to expose an overcoated photoresist layer, including 248 nm and 193 nm.
    Type: Grant
    Filed: May 10, 2002
    Date of Patent: July 27, 2004
    Assignee: Shipley Company, L.L.C.
    Inventors: Edward K. Pavelchek, Peter Trefonas, III
  • Chemically amplifying type positive resist composition
    Patent number: 6767686
    Abstract: A chemically amplifying type positive resist composition suitable for use in the lithography utilizing an ArF or KrF excimer laser and excellent in the shape of profile is provided, which comprises a resin which has an alkali-soluble group protected by 2-alkyl-2-adamantyl group or 1-adamantyl-1-alkylalkyl group, and which, per se, is insoluble or slightly soluble in alkali but becomes soluble in alkali by the action of an acid; and a sulfonium salt acid generating agent represented by the following formula (I): wherein Q1, Q2 and Q3 independently represent hydrogen, hydroxyl, alkyl having 1 to 6 carbon atoms or alkoxy having 1 to 6 carbon atoms; and Q4 represents perfluoroalkyl which may have a cyclic structure.
    Type: Grant
    Filed: November 16, 2001
    Date of Patent: July 27, 2004
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Yasunori Uetani, Kenji Ohashi, Hiroshi Moriuma
  • Cyclic olefin-based resist compositions having improved image stability
    Patent number: 6756180
    Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) and are developable to form resist structures of improved development characteristics, improved etch resistance, and reduced post-exposure bake sensitivity are enabled by the use of resist compositions containing an imaging polymer having cyclic olefin monomeric units respectively having pendant, acid-labile protecting moieties, lactone moieties and fluoroalcohol moieties. The lactone moiety is preferably a pendant lactone ester.
    Type: Grant
    Filed: October 22, 2002
    Date of Patent: June 29, 2004
    Assignee: International Business Machines Corporation
    Inventors: Wenjie Li, Pushkara Rao Varanasi, Masafumi Yamamoto
  • Radiation-sensitive resin composition
    Patent number: 6753124
    Abstract: A radiation-sensitive resin composition used as a chemically amplified positive tone resist responsive to short wavelength active radiation such as KrF excimer laser and ArF excimer laser is disclosed. The resin composition comprises: (A) an acid-dissociable group-containing resin which is insoluble or scarcely soluble in alkali and becomes alkali soluble when the acid-dissociable group dissociates, the resin comprising a lactone cyclic structure of the following formula (1): wherein a is an integer from 1-3, b is an integer from 0-9, and R1 represents a monovalent organic group, and (B) a photoacid generator. The composition has high transmittance of radiation, exhibits high sensitivity, resolution, and pattern shape, and can produce semiconductors at a high yield without producing resolution defects during microfabrication.
    Type: Grant
    Filed: June 7, 2001
    Date of Patent: June 22, 2004
    Assignee: JSR Corporation
    Inventors: Yukio Nishimura, Katsuji Douki, Toru Kajita, Tsutomu Shimokawa
  • Positive photosensitive composition
    Patent number: 6749987
    Abstract: A positive photosensitive composition comprises a compound capable of generating a specified sulfonic acid upon irradiation with one of an actinic ray and radiation and (B) a resin capable of decomposing under the action of an acid to increase the solubility in an alkali developer.
    Type: Grant
    Filed: October 17, 2001
    Date of Patent: June 15, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Kunihiko Kodama, Toshiaki Aoai
  • Positive-working photoresist composition
    Patent number: 6749989
    Abstract: The invention discloses a positive-working photoresist composition suitable for patterning light-exposure with light having a wavelength of 200 nm or shorter. The photoresist composition comprises a resinous compound capable of being imparted with increased solubility in an aqueous alkaline solution by interaction with an acid, a radiation-sensitive acid generating compound capable of generating an acid by irradiation with a radiation and an organic solvent, in which the resinous compound is a copolymer consisting of a combination of three types of specific (meth)acrylate units as the monomeric units. The patterned resist layer formed from the photoresist composition has an advantage in respect of decreased line slimming caused by electron beam irradiation in SEM inspection.
    Type: Grant
    Filed: November 30, 2001
    Date of Patent: June 15, 2004
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Hideo Hada, Satoshi Fujimura, Kazuhito Sasaki, Takeshi Iwai
  • Negative-working photoresist composition
    Patent number: 6749991
    Abstract: Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.
    Type: Grant
    Filed: July 18, 2002
    Date of Patent: June 15, 2004
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Hideo Hada, Takeshi Iwai, Satoshi Fujimura
  • Polymers and photoresist compositions for short wavelength imaging
    Patent number: 6749986
    Abstract: The present invention includes new polymers and use of such polymers as a resin component for photoresist compositions, particularly chemically-amplified positive-acting photoresist compositions. Polymers and resists of the invention are particularly useful for imaging with short wavelength radiation, such as sub-200 nm and preferably about 157 nm. Polymers of the invention contain one or more groups alpha to an acidic site that are substituted by one or more electron-withdrawing groups.
    Type: Grant
    Filed: September 8, 2001
    Date of Patent: June 15, 2004
    Assignee: Shipley Company, L.L.C.
    Inventors: Gary N. Taylor, Charles R. Szmanda
  • Chemical amplification photoresist monomers, polymers therefrom and photoresist compositions containing the same
    Patent number: 6749990
    Abstract: A chemical amplification photoresist monomer, a photoresist polymer prepared thereof, and a photoresist composition using the polymer. More specifically, a chemical amplification photoresist polymer comprising a fluorine-containing monomer represented by Chemical Formula 1, and a composition comprising the polymer. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is very useful for forming ultramicro pattern in the process using a light source of far ultraviolet, especially of VUV (157 nm). In the Formula, R1, R2, R3 and R4 is defined in the specification.
    Type: Grant
    Filed: January 22, 2002
    Date of Patent: June 15, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jae Chang Jung, Geun Su Lee, Ki Soo Shin