Abstract: There are disclosed a light-sensitive composition which comprises a polymer comprising a carboxyl group and a polymerizable double bond at the side chain, an organic-borate salt, and a hindered amine compound or a protonic acid captor; and a lithographic printing plate which comprises an aluminum plate and a light-sensitive layer comprising the above light-sensitive composition.

Abstract: (Meth)acrylate compounds having a norbornane, bicyclo[2.2.2]octane, 7-oxanorbornane or cyclohexane ring structure and a &ggr;-butyrolactone ring structure connected together by a suitable linker are novel and useful in forming polymers having high transparency, especially at the exposure wavelength of an excimer laser.

Abstract: Resists of the invention contain an added acid component which has been found can significantly enhance stability during storage between manufacture and use. Preferred resists of the invention contain an ester-based solvent such as ethyl lactate or propylene glycol methyl ether acetate in addition to the acid component.

Abstract: An authenticatable product comprising a non-opaque latent image layer of anisotropic polymer material having background optical properties with a given preferred direction of anisotropy and a given proportion of crystallinity, the latent image layer being treated so as to include: a first localized modification in the latent image layer being associated with a first latent image; and a second localized modification in the latent image layer being associated with a second latent image such that, when viewed directly, the first latent image and the second latent image are indistinguishable from the remainder of the latent image layer and, under polarized visualization, a maximum contrast between the first latent image and the remainder of the latent image layer is actualized at a different orientation of polarized visualization than a maximum contrast between the second latent image and the remainder of the latent image layer.

Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of non-ionic and ionic PAGS. Preferred resists of the invention preferably are imaged with 248 nm and/or 193 nm exposure wavelengths to provide highly resolved small dimension features.

Abstract: A lithographic printing plate precursor is disclosed, comprising a hydrophilic support having thereon a heat-sensitive layer containing either a microcapsule containing a compound having a functional group capable of reacting by heat or a fine particulate polymer, wherein (1) when the heat-sensitive layer contains a fine particulate polymer, the fine particulate polymer may be a fine particulate polymer capable of combining or incapable of combining by heat used for the image formation and the fine particulate polymer has a functional group capable of reacting with a functional group present in another fine particulate polymer or with a functional group present in another component in the heat-sensitive layer; or (2) when the heat-sensitive layer contains a microcapsule containing a compound having a functional group capable of reacting by heat, the microcapsule may be a microcapsule having an outer wall capable of rupturing or incapable of rupturing by heat used for the image formation and a light-to-heat co

Abstract: Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymer are disclosed. The photoresist polymers include photoresist monomers containing fluorine-substituted benzylcarboxylate group represented by Formula 1. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is suitable for a process using ultraviolet light source such as VUV (157 nm). In the Formula, R1, R2, R3 and m are defined in the specification.

Abstract: The following resist composition of chemical amplification type, which is excellent in transparency to light beams and dry etching properties and gives a resist pattern excellent in sensitivity, resolution, evenness, heat resistance, etc. A resist composition which comprises a fluoropolymer (A) comprising monomer units (a) of a fluorovinyl monomer having —CF2—OR (wherein R is a C1-10 alkyl group) and monomer units (b) of an alicyclic ethylenic monomer, an acid-generating compound (B) which generates an acid upon irradiation with light, and an organic solvent (C).

Abstract: A positive radiation-sensitive composition comprising: (A) at least one compound capable of generating an acid upon irradiation with an actinic ray represented by the following formula (I); and (B) a resin having a group capable of decomposing by the action of an acid to increase the solubility in an alkali developing solution: wherein R1, R2, R3, R4 and R5 each represents a hydrogen atom, an alkyl group, an alkoxyl group, a nitro group, a halogen atom, an alkyloxycarbonyl group, or an aryl group, and at least two of R1, R2, R3, R4 and R5 may be bonded to form a cyclic structure; R6 and R7 each represents a hydrogen atom, an alkyl group, a cyano group or an aryl group; Y1 and Y2 each represents an alkyl group, an aryl group, an aralkyl group, or an aromatic group containing a hetero atom, and Y1 and Y2 may be bonded to form a ring; Y3 represents a single bond or a divalent linking group; and X− represents a non-nucleophilic anion; provided that at least one of R1, R2, R3, R4 and R5,

Abstract: A positive resist composition to be irradiated with one of an electron beam and X-ray, comprises: (a) a compound capable of generating an acid upon irradiation with one of electron beam and X-ray; (b1) a resin: increasing the solubility in an alkali developer by the action of an acid; and having a group capable of leaving by the action of an acid, in which the leaving group includes a residue of a compound, the compound having a smaller ionization potential value than p-ethylphenol; and (c) a solvent.

Abstract: The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.

Abstract: Photoresist polymers, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers containing maleimide represented by Formula 1. Photoresist compositions including the photoresist polymers have excellent etching resistance, heat resistance and adhesiveness, and development ability in aqueous tetramethylammonium hydroxide (TMAH) solution. As the compositions have low light absorbance at 193 nm and 157 nm wavelength, they are suitable for a process using ultraviolet light source such as VUV (157 nm). wherein, 1, R1, R2, R3, R, R′, R″, R″′, X, a and b are defined in the specification.

Abstract: A positive resist composition comprises: a compound capable of directly or indirectly generating a radical (A) on irradiation with an energy ray; or a cyclic ether compound.

Abstract: The positive image-forming material comprises a resin including a repeating unit corresponding to a specific monomer having an &agr;-heteromethyl structure.

Abstract: This invention relates to a polymer capable of forming an ultra-fine pattern with excellent rectangular shape in a silylated surface resolution process using a chemically amplified type resist composition as single layer or the most upper layer among multiple layers and to a resist composition using the polymer. The said polymer and resist composition are useful in a silylated surface resolution process, and by conducting the silylated surface resolution process using the said resist composition, contrast of silylation becomes higher and it becomes possible to obtain ultra-fine pattern regardless of the kind of exposure energy.

Abstract: Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.

Abstract: A silver halide emulsion which comprises silver halide grains having a silver chloride content of at least 90 mole %, wherein tabular grains satisfying the following conditions (1) and (2) account for at least 70% of the total projected area of all the silver halide grains present: (1) the grain has {111} major faces, an aspect ratio of 2 or more and a thickness of 0.30 &mgr;m or less; and (2) a ratio (b/a) of the grain thickness (b) to the longest distance (a) between at least two parallel twin planes of the tabular grain is in the following range: 1.5≦(b/a)<5.

Abstract: A polymer comprising recurring units of formulae (1) and (2) wherein R1 and R3 are H or methyl, R2 and R4 are C1-15 alkyl, R5 to R8 are H, or R5 and R7, and R6 and R8 form trimethylene or 1,3-cyclopentylene and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.

Abstract: A positive photosensitive composition suitable for resist pattern formation under exposure to far ultraviolet light of wavelengths of 250 nm or shorter, particularly 220 nm or shorther, comprising: (A) a resin comprising constitutional repeating units wherein particular ring structures are present and having groups capable of decomposing under the action of an acid to cause an increase of the solubility in an alkali developer, (B) a photo-acid generator capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a fluorine-containing surfactant, a silicon-containing surfactant or a mixture thereof.

Abstract: Method for the formation of resist patterns by using a chemically amplified resist which comprises an alkali-insoluble base polymer or copolymer and an acid generator, in which the patternwise exposed film of said resist is developed with an organic alkaline developer in the presence of a surface active agent containing a higher alkyl group in a molecule thereof. The resist patterns have no drawback such as cracks and peeling, and thus can be advantageously used in the production of semiconductor devices such as LSIs and VLSIs.