Abstract: A semiconductor device including a data storage pattern is provided. The semiconductor device includes: specific resistivities a first conductive line disposed on a substrate and extending in a first direction; a second conductive line disposed above the first metal wiring; a plurality of variable resistance structures each of which includes a plurality of electrodes and a plurality of variable resistance patterns alternately stacked between the first metal wiring and the second metal wiring, wherein the plurality of variable resistance patterns are formed of a variable resistance material having a same composition, and the plurality of electrodes have different material characteristics such as different specific resistivities.

Abstract: A display device, includes: a substrate; a plurality of pixels provided on the substrate; and a plurality of light emitting elements provided in each of the pixels. A first distance between a top surface of the substrate and one of the light emitting elements in a direction perpendicular to the top surface of the substrate, in a center portion of a display region of the substrate, is different from a second distance between the top surface of the substrate and another one of the light emitting elements in the direction perpendicular to the top surface of the substrate, in a periphery portion of the display region.

Abstract: A display device comprises: a substrate; a plurality of pixels provided to the substrate; and a plurality of light emitting elements provided to the respective pixels. The light emitting elements include a plurality of first light emitting elements, a plurality of second light emitting elements, and a plurality of third light emitting elements, the first light emitting elements are arrayed on the substrate in a first direction and a second direction, the third light emitting element has a part not overlapping the first light emitting element or the second light emitting element when one of the pixels is viewed in the first direction, and the third light emitting element has a part not overlapping the first light emitting element or the second light emitting element when one of the pixels is viewed in the second direction.

Abstract: A static random access memory (SRAM) cell includes a first p-type semiconductor fin, a first dielectric fin, a first hybrid fin, a second hybrid fin, a second dielectric fin, and a second p-type semiconductor fin disposed in this order along a first direction and oriented lengthwise along a second direction, where each of the first and the second hybrid fins has a first portion including an n-type semiconductor material and a second portion including a dielectric material. The SRAM cell further includes n-type source/drain (S/D) epitaxial features disposed over each of the first and the second p-type semiconductor fins, p-type S/D epitaxial features disposed over the first portion of each of the first and the second hybrid fins, and S/D contacts physically contacting each of the p-type S/D epitaxial features and the second portion of each of the first and the second hybrid fins.

Abstract: The present application provides an LED substrate and a method for manufacturing an LED display panel. The LED substrate comprises a substrate, a colloid, and LED chips. The colloid is set on the substrate, and the LED chips comprise a first end surface and a second end surface, wherein the first end surface and the second end surface are set opposite to each other, the first end surface is for fixedly connecting a thin film transistor substrate, and the second end surface is a light outputting surface. The second end surface of the LED chips is fixedly set on the substrate by the colloid.

Abstract: A wiring board has a metal-made base having a front surface and a back surface, an insulating frame body bonded to the front surface of the base through a bonding layer made of bonding material, a seating provided in an area that is located at an inner side with respect to the frame body on the front surface of the base, a mounting area where a component is supposed to be mounted on the front surface of the base, and a groove formed on the front surface of the base. The groove is arranged in at least an area between the mounting area and the seating on the front surface in plan view, and extends in a direction crossing an opposing direction of the mounting area and the seating.

Abstract: The present disclosure provides a bonding method for a semiconductor substrate, which may improve flatness of a bonded substrate. The present disclosure further provides a bonded semiconductor substrate. The semiconductor substrate is thermally treated prior to bonding, and oxygen precipitates in the semiconductor substrate are partially or totally converted to interstitial oxygen atoms in the thermal treatment.

Abstract: A three-dimensional semiconductor memory device includes a stack structure disposed on a substrate and including lower and upper stack structures, first and second isolation trenches defining the stack structure, extending in a first direction, and spaced apart from each other in a second direction, a middle isolation trench penetrating the upper stack structure between the first and second isolation trenches and extending in the first direction, and a horizontal isolation pattern connected to the middle isolation trench and dividing the upper stack structure in the second direction. The horizontal isolation pattern includes horizontal isolation portions, each of which extends in the first direction and is offset from an extension line of the middle isolation trench in the second direction or an opposite direction to the second direction.

Abstract: A method to make light-emitting diode (LED) units include arranging LEDs in a pattern, forming an optically transparent spacer layer over the LEDs, forming an optically reflective layer over the LEDs, and singulating the LEDs into LED units. The method may further include, after forming the optically transparent spacer layer and before singulating the LEDs, forming a secondary light-emitting layer that conforms to the LEDs, cutting the LEDs to form LED groups having a same arrangement, spacing the LED groups on a support, and forming the optically reflective layer in spaces between the LED groups.

Abstract: A semiconductor device includes a semiconductor chip in which a field effect transistor mainly containing GaN is formed on a surface of a SiC semiconductor substrate. The semiconductor device includes a metal base on which a back surface of the semiconductor chip is mounted through a conductive adhesive material containing Ag and a resin mold configured to seal the semiconductor chip. A metal having wettability lower than wettability of Au or Cu with respect to Ag is exposed in a region extending along an edge of the back surface.

Abstract: An OLED including a substrate; a circuit region; reflective metal layers on the circuit region and including first to third reflective metal layers spaced apart from each other; an insulating layer including first to third insulating regions covering upper surfaces of the reflective metal layers and having a first to third thicknesses that are different from one another; first to third via plugs penetrating through the insulating layer to contact the reflective metal layers, first electrodes in contact with the via plugs, and covering a portion of an upper surface of the insulating layer; an organic light emitting layer on the first electrodes; and a second electrode on the organic light emitting layer, wherein the first to third via plugs include tungsten.

Abstract: A display device includes: a substrate including: first to third subpixels, an insulating layer including a trench on the substrate between at least two among the first to third subpixels, a first electrode on the insulating layer in each of the first to third subpixels, a fence in each of the first to third subpixels, the fence surrounding an edge of the first electrode, a light-emitting layer on the first electrode, the fence, and the insulating layer, a second electrode on the light-emitting layer, and a color filter layer including: a first color filter in the first subpixel, a second color filter in the second subpixel, and a third color filter in the third subpixel, wherein the second color filter is wider than the first color filter, and wherein the second color filter partially overlaps the first subpixel.

Abstract: A device comprises a control gate structure and a memory gate structure over a substrate, a charge storage layer formed between the control gate structure and the memory gate structure, a first spacer along a sidewall of the memory gate structure, a second spacer along a sidewall of the control gate structure, an oxide layer over a top surface of the memory gate structure, a top spacer over the oxide layer, a first drain/source region formed in the substrate and adjacent to the memory gate structure and a second drain/source region formed in the substrate and adjacent to the control gate structure.

Abstract: A semiconductor device includes a conductive feature over a substrate, a ruthenium-containing feature disposed over the conductive feature, and a first barrier layer disposed over the conductive feature and over sidewalls of the ruthenium-containing feature. The semiconductor device also includes a second barrier layer disposed over sidewalls of the first barrier layer, and a third barrier layer disposed over sidewalls of the second barrier layer. The first, second, and third barrier layers include different material compositions.

Abstract: An LED package structure and a carrier thereof are provided. The LED package structure includes a carrier, a plurality of LED chips, and an encapsulating colloid. The carrier includes a substrate, a ring-shaped first wall disposed on the substrate, and a ring-shaped second wall stacked on the first wall. A portion of the substrate surrounded by the first wall is defined as a die-bonding region, and the first wall, the second wall, and the die-bonding region jointly define an accommodating space. The LED chips are mounted on the die-bonding region and are arranged in the accommodating space. The encapsulating colloid is filled within the accommodating space, and the LED chips are embedded in the encapsulating colloid.

Abstract: A light-emitting element includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a first electrode, and a second electrode. The first semiconductor layer includes gallium and nitrogen and is of an n-type. The second semiconductor layer includes gallium and nitrogen and is of a p-type. The light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The first semiconductor layer includes a first partial region and a first side surface region. The first partial region includes a first surface contacting the first electrode. The first side surface region includes a first side surface crossing a plane perpendicular to a first direction. The first direction is from the second semiconductor layer toward the first semiconductor layer.

Abstract: A pillar structure, and a method of forming, for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.

Abstract: An apparatus and method for a detector are disclosed. The apparatus disclosed contains a non-absorbing layer shaped as one or more pyramids, one or more collector regions, an absorber layer disposed between the one or more collector regions and the non-absorbing layer, a first electrical contact, and a second electrical contact, wherein the absorber layer is configured to absorb photons of incident light and generate minority electrical carriers and majority electrical carriers, wherein the one or more collector regions are electrically connected with the absorber layer and with the first electrical contact for extracting the minority electrical carriers, and the absorber layer is electrically connected with the one or more collector regions and with the second electrical contact to extract the majority electrical carriers.

Abstract: A gallium nitride based semiconductor device is provided, where when a thickness of a transition layer is defined as the followings, the thickness of the transition layer is less than 1.5 nm: (i) a distance between a depth position at which an atomic composition of nitrogen element constituting the gallium nitride based semiconductor layer is ½ relative to that at a position on the GaN based semiconductor layer side sufficiently away from the transition layer, and a depth position at which an atomic composition of a metal element is ½ of a value of a maximum if an atomic composition of the metal element constituting an insulating layer has the maximum, or a depth position at which an atomic composition of the metal element is ½ relative to that at a position on the insulating layer side sufficiently away from the transition layer if not having the maximum.

Abstract: The present invention seeks to provide cadmium-free quantum dots with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHM is 30 nm or less. The quantum dot is preferably a nanocrystal containing zinc and tellurium or zinc and tellurium and sulfur or zinc and tellurium and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.