Patents Examined by Steven Versteeg
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Patent number: 6939446Abstract: A glass article which has a water-sheeting coating and a method of applying coatings to opposed sides of a substrate are described. In one embodiment, a water-sheeting coating 20 comprising silica is sputtered directly onto an exterior surface of the glass. The exterior face of this water-sheeting coating is substantially non-porous but has an irregular surface. This water-sheeting coating causes water applied to the coated surface to sheet, making the glass article easier to clean and helping the glass stay clean longer. In one method of the invention, interior and exterior surfaces of a glass sheet are cleaned. Thereafter, the interior surface of the sheet of glass is coated with a reflective coating by sputtering, in sequence, at least one dielectric layer, at least one metal layer, and at least one dielectric layer. The exterior surface of the glass is coated with a water-sheeting coating by sputtering silica directly onto the exterior surface of the sheet of glass.Type: GrantFiled: June 17, 2003Date of Patent: September 6, 2005Assignee: Cardinal CG CompanyInventors: Annette J. Krisko, Klaus Hartig, Roger D. O'Shaughnessy
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Patent number: 6936228Abstract: Provided is a manufacturing apparatus for a carbon nanotube including: at least two electrodes whose tips are opposed to each other; at least a power supply that applies a voltage between the two electrodes to generate discharge plasma in a discharge area between the two electrodes; and at least a plurality of magnets that generates, in a generation area of the discharge plasma, at least one of a magnetic field of multiple directions and a magnetic field having a component in parallel with a flowing direction of a discharge current, in which a thermal shield wall made of a non-magnetic material is disposed between the magnets and the generation area of the discharge plasma. Accordingly, an influence on the magnetic field due to the heat generated from the discharge plasma can be suppressed, and a high-purity carbon nanotube with excellent industrial efficiency can be stably manufactured.Type: GrantFiled: September 8, 2003Date of Patent: August 30, 2005Assignee: Fuji Xerox Co., Ltd.Inventors: Masaki Hirakata, Kentaro Kishi, Kazunori Anazawa, Hiroyuki Watanabe, Masaaki Shimizu
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Patent number: 6936144Abstract: A high frequency plasma source includes a support element, on which a magnetic field coil arrangement, a gas distribution system and a unit for extraction of a plasma beam are arranged. Additionally a high frequency matching network is arranged within the plasma source.Type: GrantFiled: February 21, 2001Date of Patent: August 30, 2005Assignee: CCR GmbH BeschichtungstechnologieInventors: Manfred Weiler, Roland Dahl
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Patent number: 6929725Abstract: A sputter ion source includes an ionizer; a sputter cathode, including a cathode, a sputter insert, and a shielding cap; a forming electrode; cathode insulator; a hollow, cylindrical shielding cathode, surrounding the sputter cathode, and tapered rotationally symmetrically in the region of the sputter insert; and a vacuum-tight housing for enclosing all of the foregoing. The sputter ion source has a prolonged operating life, low maintenance costs, and prevents atomization of parts of the ion source, for generating negative ions, in the vicinity of the cathode insert.Type: GrantFiled: September 4, 2003Date of Patent: August 16, 2005Assignee: Forschungszentrum Rossendorf e.V.Inventors: Manfred Friedrich, Horst Tyrroff
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Patent number: 6923891Abstract: A method for forming a conductive region on a first portion of a substrate, the method being constituted by exposing the first portion to a filtered beam of substantially fully ionised metallic ions under a pulsed, modulated electrical bias. The method uses FCVA (Filtered Cathodic Vacuum Arc) techniques to generate the filtered ion beam and permits the formation of a conformal metal coating, even in high aspect ratio visa and trenches. The method also permits the in-filling of vias and trenches to form conductive interconnects. Particular examples concern the deposition of copper ions. An adapted FCVA apparatus deposits metals on substrates. A control apparatus controls ion beams impacting upon substrates, the control apparatus being suitable for incorporation within existing filtered ion beam sources.Type: GrantFiled: January 10, 2003Date of Patent: August 2, 2005Assignee: Nanofilm Technologies International Pte Ltd.Inventors: Li Kang Cheah, Xu Shi, Lang Hu
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Patent number: 6921470Abstract: The present invention relates to an improvement in the manufacture of metal blanks, discs, and sputtering targets by flattening only one of the two surfaces of a metal plate. The elimination of flattening the metal plate's second surface results in a significant cost reduction. The metal plate of the present invention preferably has a single-side flatness of 0.005 inches or less, which improves the reliability of the bond between the target blank and a backing plate. Preferred metals include, but are not limited to, tantalum, niobium, titanium, and alloys thereof. The present invention also relates to machining the first side of a metal plate, bonding the first side to a backing plate, and then optionally machining the second side of the metal plate.Type: GrantFiled: February 13, 2003Date of Patent: July 26, 2005Assignee: Cabot CorporationInventor: Christopher A. Michaluk
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Patent number: 6921463Abstract: An electrode for a lithium secondary cell capable of attaining excellent charge/discharge characteristics with high discharge capacity is obtained by properly controlling a component of a collector diffusing into active material layers formed on both sides of the collector. Embodiments include forming a first active material layer consisting of a plurality of layers on a first surface of a collector, and forming a second active material layer consisting of a plurality of layers on a second surface of the collector. At least one layer constituting the second active material layer is formed before forming all layers constituting the first active material layer, thereby preventing heat for forming at least one of the layers constituting the second active material layer from being applied to all layers constituting the first active material layer.Type: GrantFiled: June 19, 2002Date of Patent: July 26, 2005Assignee: Sanyo Electric Co., Ltd.Inventors: Katsunobu Sayama, Hisaki Tarui
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Patent number: 6921464Abstract: In a method of manufacturing a thin film battery in a chamber, a target comprising LiCoO2 is provided on a magnetron cathode in the chamber, and a substrate is placed facing the target. A process gas is introduced into the chamber and the process gas is energized to form a plasma to sputter the target to deposit LiCoO2 on the substrate. An ion flux of from about 0.1 to about 5 mA/cm2 is delivered from the plasma to the substrate to enhance the crystallinity of the deposited LiCoO2 material on the substrate. The process gas is exhausted from the chamber. The target can also be made of other materials.Type: GrantFiled: August 12, 2003Date of Patent: July 26, 2005Assignee: Front Edge TechnologyInventors: Victor Krasnov, Kai-Wei Nieh, Su-Jen Ting
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Patent number: 6919053Abstract: This invention relates to a portable, battery-operated ion generator featuring an electronic high voltage system which uses extremely low battery power. The ion generator can be made in the form of a pendant using a standard 9-volt alkaline battery, which can last for several months of continuous operation. The ion generator can also serve as a dust collector for air purification. In particular, the dust collecting electrode is removable for ease of cleaning.Type: GrantFiled: February 7, 2002Date of Patent: July 19, 2005Inventor: Constantinos J. Joannou
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Patent number: 6916407Abstract: Method for sputtering from a dielectric target (9) in a vacuum chamber (2) with a high frequency gas discharge, the target (9) being mounted on a cooled metallic back plate (10) and this back plate forming an electrode (10) supplied with high frequency, includes a target thickness (Td) profiled (15) differently over the surface such that in the regions of a desired decrease of the sputtering rate the target thickness (Td) is selected to be greater than in the remaining regions.Type: GrantFiled: November 6, 2001Date of Patent: July 12, 2005Assignee: Unaxis Trading AGInventors: Stephan Voser, Eduard Karl Lorenz
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Patent number: 6913675Abstract: The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supplying to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.Type: GrantFiled: March 3, 2003Date of Patent: July 5, 2005Assignees: Seiko Epson Corporation, Youtec Co., Ltd.Inventors: Takeshi Kijima, Eiji Natori, Mitsuhiro Suzuki
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Patent number: 6911125Abstract: When forming an optical thin film on a surface of a bulb of a light source such as an electric lamp or a discharge lamp, a thin film whose interface/surface is less rough is formed on a base having a spheroid shape. When forming a thin film on a base 2 with a spheroid shape, which is disposed in a vacuum chamber 4 of a film-forming device and spun on its rotation axis, an interface or a surface of the thin film is made less rough and the thickness distribution of the thin film is made smaller by setting a sputtering gas pressure to be in a range from 0.04 Pa to 5.Type: GrantFiled: September 4, 2001Date of Patent: June 28, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Naotaka Hashimoto, Yuuji Omata
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Patent number: 6911124Abstract: We have discovered a method of providing a thin approximately from about 20 ? to about 100 ? thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 ?? m and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.Type: GrantFiled: September 17, 2002Date of Patent: June 28, 2005Assignee: Applied Materials, Inc.Inventors: Xianmin Tang, Praburam Gopalraja, Suraj Rengarajan, John C. Forster, Jianming Fu, Peijun Ding
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Patent number: 6908596Abstract: Without of affect of sulfur in fuel, NOx in exhaust gas is decomposed completely using discharge and low temperature of 300 C. degree, to establish technique for generating NO2 for necessary to oxidize a particle substance in a real time. The generated NO2 and ozone and active oxygen generated in oxygen atmosphere are used an oxidation agent the particle substance is decomposed completely using discharge and low temperature of 300 C. degree. As to NOx in exhaust gas, No is decomposed completely using a thin and narrow wire shape bear wire and NO2 for necessary to the particle substance is generated and is processed in response to operation condition of the engine in low temperature of 300 C. degree.Type: GrantFiled: March 4, 2002Date of Patent: June 21, 2005Inventors: Yukio Kinoshita, Kei Miwa
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Patent number: 6905579Abstract: A cylindrical magnetron target and spindle attachment apparatus for affixing a cylindrical magnetron target to a rotatable support spindle. The attachment apparatus includes a target and a spindle. The target defines a receiving portion. The spindle has a spindle plug. The spindle plug is disposed within the receiving portion of the target. The attachment apparatus increases the speed and ease of removing and installing cylindrical rotating targets onto a support spindle.Type: GrantFiled: February 13, 2003Date of Patent: June 14, 2005Assignee: Sputtering Components, Inc.Inventor: Daniel T. Crowley
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Patent number: 6899796Abstract: A two-step method of filling copper into a high-aspect ratio via or dual-damascene structure. The first step sputters at a low temperature of no more than 100° C. and with at least portions of high wafer bias, thereby filling a lower half of the hole. The initial copper sputtering is preferably performed through multiple cycles of low-level and high-level pedestal bias to deposit copper on exposed corners and to sputter resulting overhangs from the corners while depositing deep in the hole. The second step may include either electrochemical plating or sputtering performed at a higher temperature, e.g., at least 200° C. and with lower wafer bias to complete the hole filling. In another aspect of the invention, diffusion promoting gas such as hydrogen is added to the copper sputter plasma.Type: GrantFiled: May 1, 2003Date of Patent: May 31, 2005Assignee: Applied Materials, Inc.Inventors: Wei D. Wang, Anantha K. Subramani, Jianming Fu, Praburam Gopalraja, Jick M. Yu, Fusen Chen
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Patent number: 6896854Abstract: A reactor for reactive co-conversion of heavy hydrocarbons and hydrocarbon gases and includes a dielectric barrier discharge plasma cell having a pair of electrodes separated by a dielectric material and passageway therebetween. An inlet is provided for feeding heavy hydrocarbons and other reactive materials to the passageway of the discharge plasma cell, and an outlet is provided for discharging reaction products from the reactor. A packed bed catalyst may optionally be used in the reactor to increase efficiency of conversion. The reactor can be modified to allow use of a variety of light sources for providing ultraviolet light within the discharge plasma cell. Methods for upgrading heavy hydrocarbons are also disclosed.Type: GrantFiled: January 29, 2002Date of Patent: May 24, 2005Assignee: Battelle Energy Alliance, LLCInventors: Peter C. Kong, Lee O. Nelson, Brent A. Detering
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Patent number: 6896774Abstract: Metal may be deposited into trenches, vias, or other wafer openings using a physical vapor deposition chamber under vacuum. Sonic energy may be applied directly to the wafer having the openings to be filled. As a result, pinching off of the openings may be reduced or eliminated.Type: GrantFiled: March 6, 2003Date of Patent: May 24, 2005Assignee: Intel CorporationInventors: Justin K. Brask, Mark L. Doczy, Robert B. Turkot, Jr.
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Patent number: 6893544Abstract: An in-line sputtering system for depositing a thin film on a substrate includes a buffer heating module, an entry transfer module adjacent to the buffer heating module and having an expedited conveyor device for moving the substrate therein and a first sputtering module for depositing the thin film on the substrate, which is adjacent to the entry transfer module. The entry transfer module serves as a buffer zone which mitigates fluctuations in temperature and pressure in the first sputtering module when the substrate is unloaded from the buffer heating module. The substrate in the entry transfer module is moved by the expedited conveyor device at a speed greater than that in the first sputtering module.Type: GrantFiled: August 14, 2002Date of Patent: May 17, 2005Assignee: Samsung Corning Co., Ltd.Inventors: Hee Soo Song, Sung Wan Park
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Patent number: 6893618Abstract: A device for air cleaning from dust and aerosols based on the use of non-homogeneous electrostatic field creating a flow of charged particles (the so called “ionic wind”) and operating as electrostatic precipitator. The device comprises a body inside which corona-forming and precipitation electrodes with opposite polarities are established. Inside the body deflection electrodes are established as well, in front of corona-forming electrodes a reflector for positively charged aeroions by an electrode electrically coupled with said corona-forming electrodes being established. The device comprises one or several tapes made of porous-fiber material placed into non-homogeneous electric field.Type: GrantFiled: November 22, 2002Date of Patent: May 17, 2005Inventors: Gennady Mikhailovich Kotlyar, Ivan Vasilievich Sysoev