Abstract: Regardless of the materials used in an artificial joint component design, the present invention applies gas cluster ion beam (GCIB) technology in order to modify the component's surface(s) so as to increase lubrication between contact surfaces, thereby substantially reducing wear debris, osteolysis complications, and accelerated wear failure. The approach of the surface modification comprises an atomic level surface patterning utilizing GCIB to apply a predetermined pattern to the surface(s) of the joint implant to reduce frictional wear at the interface of the surfaces. A reduction in wear debris by GCIB patterning on any surface(s) of a joint prosthesis reduces accelerated failure due to wear and osteolysis and results in a substantial cost savings to the healthcare system, and reduces patient pain and suffering.

Abstract: A sputtering apparatus and a sputter film deposition method, which includes a conventional magnetron and an AC magnetron for deposition of a low refractive index film, and a conventional magnetron and an AC magnetron for deposition of a high refractive index film, performs film deposition by each of the AC magnetrons until having achieved 90% of a designed film thickness, and then performs the film deposition only by each of the conventional magnetrons, and which can control the film thickness with high precision and have excellent productivity.

Abstract: A reaction chamber (12, 49) is adapted to be coupled to a source of microwave radiation. A pair of opposed field enhancing electrodes (18, 21; 62, 63) concentrate microwave energy so as to form plasma in a localised region between the electrodes. Gas passages are arranged for passing a gaseous medium into and out of the chamber so that the gaseous medium passes through the said localised region of plasma. The electrodes comprise electrically conducting tubes (18, 21; 62, 63) held in electrode holders (17, 19; 53, 54) located in the chamber wall, the electrode tubes being removable and replaceable from outside of the apparatus.

Abstract: A barrier layer is deposited on a substrate having a recess by sputtering tantalum in a nitrogen atmosphere. A flow of the nitrogen is selected to deposit mixed phase bcc/?Ta, and sputter ions are sufficiently energetic to cause re-sputtering of deposited material from the base of the recess to its sidewall or sidewalls.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

Abstract: Sputtering particles are deposited immediately after activating a surface of a substrate composed of a carbon-containing material. Accordingly, a process for reforming a surface of a substrate, a substrate with a reformed surface, and an apparatus therefor are provided in which the depositability and adhesiveness of the sputtering particles are improved. A vacuum ultraviolet light is generated by a laser beam. A surface of a substrate composed of a carbon-containing material is exposed to the generated vacuum ultraviolet light. As a result, the surface of the substrate is activated. Simultaneously therewith, a sputtering particles-generating device generates sputtering particles, such as neutral atoms, ions and clusters. The resultant sputtering particles are deposited on the activated surface of the substrate. Since the sputtering particles are deposited immediately after the surface of the substrate is activated, they are adhered firmly on the surface of the substrate.

Abstract: Methods and devices for producing fullerene are provided. The present invention includes a pair of electrodes spaced apart to define a region wherein an arc discharge can be conducted between the electrode pair and a gas containing carbon can be supplied to the region such that fullerene can be easily and readily produced.

Abstract: A sputtering target used in carrying out a PVD coating process where the sputtering target is sputtered by bombardment with gas atoms and a layer consisting of several metallic elements is deposited onto a substrate, the sputtering target being a plate made of a metal used for building up the layer, and with the other metals used for building up the layer being present at least partially in the form of plugs, which are inserted in holes in the plate, the shape of the free surfaces of the plugs being selected in such a way that the sputtering rate for each metal used in the sputtering process can be set according to the desired composition of the layer being applied.

Abstract: A three-dimensional periodical structure whose period is about 1 ?m or smaller is provided. At least two kinds of films which have two-dimensionally substantially periodical projections are successively formed in layers substantially periodical to construct structure which is substantially three-dimensionally periodical. For instance, the films are made of materials different in refractive index. The three-dimensional periodical structure whose period is about 1 ?m or smaller can be obtained by a simple fabricating method. By this structure, the propagation of a wave with a specific wavelength in many solid angular directions including several axial directions parallel to the plane and the thickness direction of the layers can be cut off.

Abstract: A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 ??cm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined HF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics.

Abstract: Methods and apparatuses for shielding magnetic flux which is associated with a semiconductor fabrication system are provided. A magnetic shield assembly substantially surrounds a side wall of a plasma reactor. The shield assembly comprises a passive shield member in combination with an active shield member. As a result, effective shielding of magnetic flux can occur without excessive distortion of the magnetic field line pattern in the plasma region of the plasma reactor. In one aspect, the shield assembly comprises a first shield member adapted to attenuate a magnetic flux density. The first shield member is disposed in a parallel, spaced apart relationship from the side wall. A second member is attached to the first shield member and is constructed of a ferromagnetic material which is permanently magnetized.

Abstract: The reactor contains the reaction chamber (1), the means for the removal of aim product from the reaction chamber (7), at least a pair of electrodes in the reaction chamber, each made as an open container (2) filled with metal (3), placed in such a way that voltage applied between them strikes an arc discharge in the space between electrodes, and the means for supplying the reaction chamber with plasma forming gas which feeds the reaction chamber with plasma forming gas to form the vortex flow of the gas in the space between the electrodes.

Abstract: A curing apparatus providing rapid curing by using light, pressure, pressure and light, or purge, pressure and light to cure resinous materials by application of energy from an external source to excite polymerization in a polymerizable system. A curing chamber is provided to house the polymerizable dental material. The apparatus utilizes light emitting diodes (LEDs) to radiate energy to polymerize the dental materials. The LEDs are positioned optimally within the curing apparatus to provide efficient, effective polymerization of the dental materials.

Abstract: A lighting equipment for purifying air, includes an anion generator generating anions to purify air; a housing including an electric power source supplying an electric power, an amplifier amplifying the electric power from the electric power source, and an emitting aperture member having a plurality of holes for exhausting the generated anions therethrough; and at least one illumination unit engaged with the housing.

Abstract: Coating apparatus for disk-shaped workpieces has a transport chamber with a workpiece transport configuration having two linearly driven transport rams connected to a rotational axis. The rams are within shell lines of a rotation body about the axis and are extended/retracted in the same direction as the axis. A workpiece receiver is at the ends of each ram and two operating openings communicate the transport chamber with stations of the apparatus including a coating station. Surface normals of the openings are in the direction of shell lines. A pump with pump opening communicates with the transport chamber and coating station. At least one of the rams has a closure for closing the pump opening and forming a seal therefor.

Abstract: A method of deposition of a phosphor in a single-source sputtering process, in which the phosphor is selected from the group consisting of ternary, quaternary or higher thioaluminate, thiogallate and thioindate phosphors, and composites thereof, synthesized with cations selected from Groups IIA and IIB of the Periodic Table of Elements. The phosphor is of a pre-determined composition of elements. The method comprising sputtering in a hydrogen sulphide atmosphere from a single source composition so as to deposit a composition on a substrate. The composition of the targets of the single source has a relative increase in concentration of elements of the phosphor that have a lower atomic weight compared to other elements in said phosphor. The relative increase is controlled such that deposition of the pre-determined composition is effected on the substrate. Preferred phosphors are barium thioaluminate (BaAl2S4:Eu), and barium magnesium thioaluminates.

Abstract: A replacement chamber shield is provided for a wafer processing machine that replaces many prior art shield components with a single piece shield. The shield is particularly suitable for use in a processing chamber of a vacuum processing machine of a type for processing a wafer in a vertically-oriented split-plenum, such as machines of the type described in U.S. Pat. Nos. 4,909,695 and 4,915,564 and the machine marketed under the trademark ECLIPSE MARK II by Tokyo Electron Limited. The shield is formed of sheet material formed into an axially-extending cylindrical sidewall that turns radially inwardly into an annular shoulder that oppositely turns into an at least partially axially-extending section that further turns oppositely back radially inwardly into an annular disc having a central circular opening that is larger in diameter than the given wafer diameter. Advantageous dimensions and geometric relationships to components of the machine are described and claimed.

Abstract: The particle implantation apparatus comprises a target, an ion beam source, a target scanning mechanism, a slit plate, a holder, and a holder scanning mechanism. The target is used for sputtering. The ion beam source applies an ion beam apparently like a sheet wider in the X direction onto the target so as to generate sputter particles. The target scanning mechanism mechanically scans the target in the Y direction crossing the X direction in reciprocating manner at a fixed angle with respect to the ion beam. The slit plate is used for passing sputter particles generated from the target and has a long slit extending in the X direction. The holder holds a substrate at the position where sputter particles having passed through the slit are incident. The holder scanning mechanism mechanically scans the holder in the Z direction crossing both the X and Y directions in reciprocating manner.

Abstract: A system and method for reducing and controlling the number of defects due to carbon inclusions on magnetic media is disclosed. A diamond like carbon protective layer is deposited on magnetic media using a rotary cathode target assembly. The target and cathode are cylindrical in shape and are mounted on holder that allows the target and cathode to rotate while holding a magnet fixed. The target surface is periodically swept in through a plasma which sputters off the surface of the target. This prevents the build up of redeposited material on the target and consequently keeps the target surface cleaner. The reduction of redeposited material on the target surface reduces the number of unwanted particulates which are ejected from the surface, manifesting themselves as disk defects.