Abstract: A light emitting chip including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a first bonding layer interposed between the first and second LED sub-units, a second bonding layer interposed between second and third LED sub-units, and a first connection electrode electrically connected to and overlapping at least one of the first, second, and third LED sub-units, the first connection electrode having first and second opposing side surfaces, the first side surface having a first length and the second side surface having a second length, in which the difference in length between the first side surface and the second side surface of the first connection electrode is greater than a thickness of at least one of the LED sub-units.

Abstract: A micro LED display device includes a micro light emitting unit, a conductive structure and a substrate. The micro light emitting unit includes a plurality of micro light emitting elements, and each of the micro light emitting elements includes a semiconductor structure and an electrode structure. The semiconductor structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The electrode structure includes a first type electrode and a second type electrode. The conductive structure includes a first type conductive layer and a second type conductive layer. The first type conductive layer is electrically connected to the first type electrode, and the second type conductive layer is electrically connected to the second type electrode. The micro light emitting unit is disposed on the substrate, and the electrode structure is disposed toward the substrate and includes a gap therebetween.

Abstract: A device includes a substrate having a first surface and a second surface opposite to the first surface; a thin-film transistor array disposed on the first surface, including a plurality of transistors; a plurality of diodes disposed on the thin-film transistor array; a plurality of conductive structures penetrating through the substrate from the first surface to the second surface, wherein the plurality of conductive structures are corresponding to the plurality of diodes and electrically connected to the plurality of diodes; a driver unit disposed on the second surface of the substrate; a patterned conductive layer disposed between the substrate and the driver unit; a protection layer disposed on the patterned conductive layer, wherein the protection layer has an opening that exposes the patterned conductive layer; and a conductive material disposed in the opening.

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

Abstract: A light-emitting device and a method for manufacturing the light-emitting device is disclosed. Such a light-emitting device comprises a substrate, a plurality of cells disposed on the substrate, and a plurality of semiconductor dice, wherein each of the plurality of cells accommodates at least one of the plurality of dice. Each of the plurality of cells may be filled with an encapsulant, phosphor or a mixture of an encapsulant with phosphor to control light characteristics of the light-emitting device. In an alternative aspect, cells may be filled with an encapsulant, and comprise a transparent cover coated with or filled with phosphors to control light characteristics of the light-emitting device.

Abstract: A heterocyclic compound represented by Formula 1 and an organic light-emitting device including the same are provided.

Abstract: A display apparatus including a display substrate, a plurality of light emitting devices disposed on the display substrate, at least one of the light emitting devices including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, and a third LED sub-unit disposed on the second LED sub-unit, and a molding layer covering side surfaces of the light emitting devices and exposing upper surfaces thereof, in which the third LED sub-unit is disposed closer to an upper surface of the light emitting device than the first LED sub-unit.

Abstract: Discussed is a lamp and a lamp device, and more particularly, to a lamp using a semiconductor light-emitting device, and a method of manufacturing the lamp. The lamp includes a substrate; a plurality of semiconductor light-emitting devices disposed on the substrate; a flat layer formed between the plurality of semiconductor light-emitting devices; a spacer disposed between the substrate and the flat layer; and an air gap disposed between each semiconductor light-emitting device and the spacer.

Abstract: An organic light-emitting display device and a manufacturing method thereof are disclosed. The display device includes a substrate including a first area, a second area and a third area, the second area being located between the first area and the third area; a plurality of pixels on the substrate, the plurality of pixels being located in the third area; a boss portion on the substrate, the boss portion being located in the second area; and an opening located in the first area and surrounded by the plurality of pixels. Each of the pixels includes a first electrode layer, an organic light-emitting layer, and a second electrode layer which are sequentially arranged in a direction away from the substrate. At least one of the organic light-emitting layer and the second electrode layer extends toward the opening and is disconnected at the boss portion. The boss portion includes a photoresist material.

Abstract: A method of aligning light-emitting elements, a method of fabricating a display device, and a display device are provided. The method of aligning light-emitting elements comprises providing a base substrate and a plurality of conductive patterns on the base substrate and spaced apart from one another, spraying ink in which a plurality of light-emitting elements are dispersed on the base substrate, positioning the plurality of light-emitting elements on the conductive pattern and orienting one end of each of the plurality of light-emitting elements in a first direction.

Abstract: A light-emitting diode packaging structure and a method for fabricating the same is disclosed. A semiconductor wafer is provided, which includes semiconductor substrates. Each semiconductor substrate is penetrated with a first through hole and three second through holes. An insulation layer is formed on the surface of each semiconductor substrate and the inner surfaces of the first through hole, the first sub-through hole, and the second sub-through hole. A patterned electrode layer is formed on the top surface of the semiconductor substrate. A conductive material covering the insulation layer is formed in the first through hole and the second through hole and electrically connected to the patterned electrode layer. Three light-emitting diodes are respectively formed in the first sub-through holes of the second through holes of each semiconductor substrate and respectively electrically connected to the conductive material within the second through holes.

Abstract: A light emitting package includes a first LED sub-unit having first and second opposed surfaces, a second LED sub-unit disposed on the second surface of the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a plurality of connection electrodes having side surfaces and electrically connected to at least one of the LED sub-units, the connection electrodes covering a side surface of at least one of the LED sub-units, a first passivation layer surrounding at least the sides surfaces of the connection electrodes, the first passivation layer exposing at least a portion of the first surface of the first LED sub-unit, a substrate having first and second opposed surfaces, with the first surface of the substrate facing the LED sub-units, and a first electrode disposed on the first surface of the substrate and connected to at least one of the connection electrodes.

Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate; a stacked body having a plurality of first insulating layers and conductive layers stacked alternately on the semiconductor substrate; a columnar semiconductor layer contacting the semiconductor substrate in the stacked body being provided extending in a stacking direction of the stacked body and including a first portion and a second portion which is provided above the first portion; a memory layer provided on a side surface of the columnar semiconductor layer facing the stacked conductive layers and extending along the columnar semiconductor layer; and a second insulating layer provided between one of the first insulating layer and the conductive layers of the stacked body.

Abstract: The disclosure provides an LED white light device, including a blue light chip and phosphors. The blue light chip has a band of (455-470) nm. The phosphors include a dual-band yellow phosphor and a red phosphor having an excited light peak wavelength range of (610-660) nm. The yellow phosphor and the red phosphor are mixed according to a proportion of 1:(0.03-0.2) and cover the blue light chip, such that blue light emitted by the packaged LED white light device has a peak wavelength range of (450-465) nm. The disclosure also provides a preparation method of an LED white light device and an LED backlight module adopting the above LED white light device. The disclosure achieves the effects of blue light prevention, high color gamut and pure white simultaneously, Color uniformity and consistency are good, and a blue-green-red three-color continuous spectrum is provided, which is closer to a solar spectrum.

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a second layer in contact with the second electrodes of the semiconductor element and a first layer located on a side opposite to the second electrodes, an average crystal grain size of crystals included in the second layer is larger than an average crystal grain size of crystals included in the first layer, and the first layer is spaced apart from the second electrodes of the semiconductor element.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: Semiconductor light emitting devices and packages are provided. The semiconductor light emitting device includes a substrate, a luminous structure, and first and second electrodes. The substrate has a first region and a second region that is spaced apart in a first direction from the first region. The luminous structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked on the substrate. The first electrode is on the second semiconductor layer. The second electrode is electrically coupled to the first semiconductor layer through plural first openings that penetrate the first electrode, the second semiconductor layer, and the active layer, where the first openings expose the first semiconductor layer. The first electrode is in contact with the second semiconductor layer in the first region and in the second region, and the first openings are in the first region.

Abstract: A thermally activated delayed fluorescence (TADF) molecule comprising: a central electron donor moiety, wherein the central electron donor moiety is formed of a conjugated multi-ring system comprising three nitrogen atoms; and three electron acceptor moieties, each bonded to the central electron donor moiety via one of the three nitrogen atoms, wherein at least one of the three electron acceptor moieties is twisted relative to the central electron donor moiety defining a torsion angle in a range 40° to <90° whereby the TADF molecule has a photoluminescence quantum yield of >60% and a rate of reverse intersystem crossing from a lowest excited triplet state to a lowest excited singlet state of at least 1×10 s?1.

Abstract: An electretized film of the present invention includes a cyclic olefin polymer, in which the electretized film is a non-porous film, and a piezoelectric constant d33 in a thickness direction, which is measured by applying a pressing force to the electretized film in the thickness direction, under conditions of a load of 0.5 N, a dynamic load of ±0.25 N, a frequency of 110 Hz, a temperature of 23° C., and a humidity of 50%, is equal to or more than 100 pC/N.