Abstract: Controlling a polishing system includes receiving from an in-situ monitoring system, for each region of a plurality of regions on a substrate being processed by the polishing system, a sequence of characterizing values for the region. For each region, a polishing rate is determined for the region, and an adjustment is calculated for at least one processing parameter. For each of a plurality of parameter update times, an adjustment is calculated for at least one processing parameter, wherein calculation of the adjustment for a particular parameter update time from the plurality of parameter update times includes calculation of expected future parameter changes for one or more future parameter update times subsequent to the particular parameter update time.

Abstract: The present invention relates to a polishing apparatus having a surface-property measuring device for measuring surface properties of a polishing pad which is used to polish a substrate, such as semiconductor wafer, and a polishing system including such a polishing apparatus. The polishing apparatus includes a surface-property measuring device (30) for measuring surface properties of a polishing pad (2), a support arm (50) for supporting the surface-property measuring device (30), and a moving unit (53) coupled to the support arm (50) and configured to move the surface-property measuring device (30) from a retreat position to a measure position.

Abstract: A pneumatic vacuum, cleaner includes an external body shell having an internal chamber defined therein and a dustbin carried within the internal chamber of the external body shell. The cleaner also includes an impeller housing positioned below the dustbin and having an inlet coupled to the dustbin. In addition, the cleaner includes an impeller within the impeller housing and is configured to pressurize air exiting the impeller housing. A manifold is mounted to the impeller housing and includes a plurality of air nozzles configured to direct air downward and away from the manifold to entrain debris into the air and simultaneously use the pressurized air to lift the cleaner. A concentric passageway is formed adjacent an inside surface of the external body shell and is configured to recirculate the pressurized air from the plurality of air nozzles back to the dustbin and the impeller housing via the concentric passageway.

Abstract: Embodiments herein generally relate to polishing pads and methods of forming polishing pads. A polishing pad includes a plurality of polishing elements and a plurality of grooves disposed between the polishing elements. Each polishing element includes a plurality of individual posts. Each post includes an individual surface that forms a portion of a polishing surface of the polishing pad and one or more sidewalls extending downwardly from the individual surface. The sidewalls of the plurality of individual posts define a plurality of pores disposed between the posts.

Abstract: A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.

Abstract: A chemical mechanical polishing pad includes a surface portion of a first material. The surface portion includes a plurality of grooves. A first portion of the grooves are exposed grooves located at a surface of the chemical mechanical polishing pad. A second portion of the grooves are buried grooves embedded below the surface of the chemical mechanical polishing pad, such that, during use of the chemical mechanical polishing pad, one or more of the buried grooves are exposed at the surface.

Abstract: Generating a recipe for controlling a polishing system includes receiving a target removal profile that includes a target thickness to remove for a plurality of locations on a substrate that are angularly distributed around the substrate, and storing a first function defining a polishing rate for a zone from a plurality of pressurizable zones of a carrier head that are angularly distributed around a the carrier head. The first function defines polishing rates as a function of pressures. For each particular zone of the plurality of zones a recipe defining a pressure for the particular zone over time is calculated by calculating an expected thickness profile after polishing using the first function, and minimizing a cost function that incorporates a first term representing a difference between the expected thickness profile and a target thickness profile.

Abstract: New and novel structure(s) for cleaning surfaces have been disclosed. The device may include: a wiping surface, which may be disposable; a brush roll/larger debris gathering mechanism: a wiping surface, which may be disposable; a brush roll/larger debris gathering mechanism; a local debris storage and/or staging area, and a larger remote debris storage structure. Additionally, there are mechanisms and structures disclosed for powering the brush roll, activating the brush roll from an out of use position to an in use position, and moving the waste from one area to another. The invention at hand uniquely and inventively improves upon the known devices in this field.

Abstract: Embodiments of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates. More specifically, embodiments of the present disclosure relate to planarization of surfaces on substrates for advanced packaging applications, such as surfaces of polymeric material layers. In one implementation, the method includes mechanically grinding a substrate surface against a polishing surface in the presence of a grinding slurry during a first polishing process to remove a portion of a material formed on the substrate; and then chemically mechanically polishing the substrate surface against the polishing surface in the presence of a polishing slurry during a second polishing process to reduce any roughness or unevenness caused by the first polishing process.

Abstract: Controlling a polishing system includes receiving from an in-situ monitoring system, for each region of a plurality of regions on a substrate being processed by the polishing system, a sequence of characterizing values for the region. For each region, a polishing rate is determined for the region, and an adjustment is calculated for at least one processing parameter. Calculation of the adjustment includes minimizing a cost function that includes, for each region, a difference between a current characterizing value or an expected characterizing value at an expected endpoint time and a target characterizing value for the region, and optimization of the cost function is subject to at least one constraint.

Abstract: A substrate processing apparatus includes: a conveyor belt configured to have an outer surface on which a bottom surface of a substrate is seated; and a polishing head unit configured to face an upper surface of the substrate, wherein the polishing head unit includes: a polishing head connected to a driver; a polishing pad configured to face the polishing head; a polishing pad fixing ring disposed between the polishing head and the polishing pad; and a temperature sensor configured to overlap the polishing pad fixing ring and to be spaced apart from the polishing pad fixing ring.

Abstract: A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature control system including a source of heated or coolant fluid and a plenum having a plurality of openings positioned over the platen and separated from the polishing pad for delivering the fluid onto the polishing pad, wherein at least some of the openings are each configured to deliver a different amount of the fluid onto the polishing pad.

Abstract: The present application relates to a pad-temperature regulating apparatus for regulating a temperature of a surface of a polishing pad. The pad-temperature regulating apparatus includes a pad-contact member, a supply system for supplying a heating liquid and a cooling liquid into the pad contact member, a pad-temperature measuring device for measuring the temperature of the surface of the polishing pad, and a controller for performing a PID control of manipulated variables of a first flow control valve and a second flow control valve. The controller includes a memory in which a learned model constructed to maintain a temperature behavior curve, created based on measured values of the pad-temperature measuring device, within a predetermined allowable range, is stored; and a processing device which inputs at least one temperature behavior parameter to the learned model, and performs a calculation to output a change value of PID parameter for the PID control.

Abstract: Embodiments herein generally relate to polishing pads and methods of forming polishing pads. A polishing pad includes a plurality of polishing elements. Each polishing element comprises an individual surface that forms a portion of a polishing surface of the polishing pad and one or more sidewalls extending downwardly from the individual surface to define a plurality of channels disposed between the polishing elements. Each of the polishing elements has a plurality of pore-features formed therein. Each of the polishing elements is formed of a pre-polymer composition and a sacrificial material composition. In some cases, a sample of the cured pre-polymer composition has a glass transition temperature (Tg) of about 80° C. or greater. A storage modulus (E?) of the cured pre-polymer composition at a temperature of 80° C. (E?80) can be about 200 MPa or greater.

Abstract: Provided is a sweeping robot. The sweeping robot includes a chassis and a jet dust raising structure, and the jet dust raising structure is installed on the chassis, the jet dust raising structure has an air inlet, an air outlet and a jet channel connected to the air inlet and the air outlet, the air inlet is configured for air flow into the jet channel, the air outlet is located on a front side of the brush suction port of the sweeping robot.

Abstract: An apparatus for chemical mechanical polishing (CMP) of a substrate is described herein. The apparatus includes an extension disposed between a retaining ring and a chucking membrane. The extension is disposed radially outward from the edge of the substrate and is configured to contact the retaining ring during substrate processing. The extension provides a repeatable and controlled point of contact between the retaining ring and the chucking membrane. The extension may have multiple configurations, such that the contact point between the retaining ring and the chucking membrane is set at a pre-determined location or such that the contact point is moveable by an adjustable stop.

Abstract: A self-moving cleaning device includes: a base; a mobile module adjacent to the base and configured to contact a surface when the self-moving cleaning device moves on the surface; a vacuum module arranged over the base; a dust box arranged over the base and connected to the vacuum module, the dust box including a first opening and a second opening; a first suction port arranged on the base and including a first suction inlet connected to the first opening; a second suction port arranged on the base and including a second suction inlet connected to the second opening, the first suction port disposed between a front side of the base and the second suction port; a roller brush device arranged on the base and within the second suction port; and an air duct, wherein the first suction port is connected to the dust box through the air duct to thereby connect the first suction inlet to the first opening.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of coolant, a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; and a controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation.

Abstract: A polishing system includes a platen having a top surface to support a main polishing pad. The platen is rotatable about an axis of rotation that passes through approximately the center of the platen. An annular flange projects radially outward from the platen to support an outer polishing pad. The annular flange has an inner edge secured to and rotatable with the platen and vertically fixed relative to the top surface of the platen. The annular flange is vertically deflectable such that an outer edge of the annular flange is vertically moveable relative to the inner edge. An actuator applies pressure to an underside of the annular flange in an angularly limited region, and a carrier head holds a substrate in contact with the polishing pad and is movable to selectively position a portion of the substrate over the outer polishing pad.

Abstract: An as-sliced wafer processing method includes a grinding step of grinding a first surface of an as-sliced wafer, an outer periphery positioning step of moving a chuck table and a grinding unit relative to each other in directions parallel to a holding surface of the chuck table so as to position an edge on an outer periphery of grinding stones at an outer peripheral edge of the first surface after the grinding step is carried out, and a chamfering step of chamfering an outer periphery of the first surface of the as-sliced wafer by the grinding stones after the outer periphery positioning step is carried out.