Abstract: An interposer routing structure includes a first trace layer, a bump layer, a second trace layer and a third trace layer. The first trace layer is configured to receive a power. The bump layer is coupled to a die. The second trace layer and the third trace layer are coupled between the first trace layer and the bump layer, and include multiple ground traces and multiple power traces. The ground traces are located on both sides of at least one of the power traces, so that the ground traces isolate the at least one power trace and multiple signal traces. The power traces of the second trace layer are coupled to each other by a connecting power trace, and the ground traces of the third trace layer are coupled to each other by a connecting ground trace.

Abstract: An array of complementary die sets is attached to a carrier substrate. A continuous complementary-level molding compound layer is formed around the array of complementary die sets. An array of primary semiconductor dies is attached to the array of complementary die sets. A continuous primary-level molding compound layer is formed around the array of primary semiconductor dies. The bonded assembly is diced by cutting along directions that are parallel to edges of the primary semiconductor dies. The sidewalls of the complementary dies are azimuthally tilted relative to sidewalls of the primary semiconductor dies, or major crystallographic directions of a single crystalline material in the carrier substrate are azimuthally tilted relative to sidewalls of the primary semiconductor dies.

Abstract: Embodiments provide a method for packaging a semiconductor, a semiconductor package structure, and a package. The method includes: providing a substrate wafer having a first surface and a second surface arranged opposite to each other, the first surface having a plurality of grooves, a plurality of electrically conductive pillars being provided at a bottom of the groove, and the electrically conductive pillar penetrating through the bottom of the groove to the second surface; providing a plurality of semiconductor die stacks; placing the semiconductor die stack in the groove; and covering a cover plate wafer on the first surface of the substrate wafer to seal up the groove so as to form a semiconductor package structure, a gap between the substrate wafer, the semiconductor die stack and the cover plate wafer being not filled with a filler.

Abstract: A redistribution structure for a semiconductor device and a method of forming the same are provided. The semiconductor device includes a die encapsulated by an encapsulant, the die including a pad, and a connector electrically connected to the pad. The semiconductor device further includes a first via in physical contact with the connector. The first via is laterally offset from the connector by a first non-zero distance in a first direction. The first via has a tapered sidewall.

Abstract: A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

Abstract: Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

Abstract: A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

Abstract: The semiconductor structure includes a plurality of first dies, a plurality of second dies disposed over each of the first dies, and a dielectric material surrounding the plurality of first dies and the plurality of second die. Each of the second dies overlaps a portion of each first die.

Abstract: Electronic device package technology is disclosed. An electronic device package in accordance with the present disclosure can include an electronic component, a redistribution layer, and an interposer electrically coupling the redistribution layer and the electronic component. The interposer can have interconnect interfaces on a top side electrically coupled to the electronic component and interconnect interfaces on a bottom side electrically coupled to the redistribution layer. A density of the interconnect interfaces on the top side can be greater than a density of the interconnect interfaces on the bottom side. Associated systems and methods are also disclosed.

Abstract: A semiconductor package includes a first semiconductor chip having a first face and a second face opposite thereto. The first semiconductor chip includes a first wiring layer having a surface that forms the first face. A second semiconductor chip disposed on the first face of the first semiconductor chip includes a second wiring layer directly contacting the first wiring layer. A first mold layer is disposed on one lateral side of the first semiconductor chip and directly contacts the second wiring layer. A first via penetrates the first mold layer. A width of the first wiring layer and the first semiconductor chip in a horizontal direction are substantially the same. A width of the second wiring layer and the second semiconductor chip in the horizontal direction are substantially the same. A height of the first via and the first semiconductor chip in the vertical direction are substantially the same.

Abstract: A stack package, and a method of manufacturing the same, includes a first encapsulant layer formed on a carrier. Also semiconductor dies are sequentially offset stacked on the first encapsulant layer. Vertical connectors connected to the semiconductor dies are formed. A second encapsulant layer coupled to the first encapsulant layer is formed to encapsulate the vertical connectors and the semiconductor dies. Redistribution layers connected to the vertical connectors are formed on the second encapsulant layer.

Abstract: According to one embodiment, a semiconductor device includes a substrate; a semiconductor chip provided on the substrate; a resin covering the semiconductor chip; and a metal film provided on the resin. The metal film includes a first metal layer provided on the resin, a second metal layer provided on the first metal layer, and a third metal layer provided on the second metal layer. The first metal layer and the second metal layer contain a same material, and a particle diameter of the second metal layer is smaller than a particle diameter of the first metal layer.

Abstract: An electronic package is provided, where a circuit layer and a metal layer having a plurality of openings are formed on a dielectric layer of a circuit portion to reduce the area ratio of the metal layer to the dielectric layer, so as to reduce stress concentration and prevent warping of the electronic package.

Abstract: An electronic package includes a patterned conductive layer and at least one conductive protrusion on the patterned conductive layer. The at least one conductive protrusion has a first top surface. The patterned conductive layer and the at least one conductive protrusion define a space. The electronic package further includes a first electronic component disposed in the space and a plurality of conductive pillars on the first electronic component. The conductive pillars have a second top surface. The first top surface is substantially level with the second top surface.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a first die comprising a first face and a second face; and a second die, the second die comprising a first face and a second face, wherein the second die further comprises a plurality of first conductive contacts at the first face and a plurality of second conductive contacts at the second face, and the second die is between first-level interconnect contacts of the microelectronic assembly and the first die.

Abstract: A semiconductor package includes at least one semiconductor chip disposed in such a way that an active surface with chip pads faces a redistribution layer, vertical interconnectors extending in a vertical direction from the chip pads toward the redistribution layer, wherein each of the vertical connectors has a first end portion that is connected to a corresponding chip pad and a second end portion that is disposed on an opposite end of each vertical interconnector in relation to the first end portion, and a molding layer covering the semiconductor chip and the vertical interconnectors while exposing a surface of each of the second end portions of the vertical interconnectors, wherein the redistribution layer is formed over the molding layer, the redistribution layer having a redistribution land that is in contact with the surface of the second end portion, and wherein a width of the surface of the second end portion is greater than a width of an extension portion between the first end portion and the second

Abstract: Hybrid fanouts for semiconductor device assemblies, and associated methods and systems are disclosed. In one embodiment, at least one edge a first semiconductor die is attached to a molding including through mold vias (TMVs). Conductive traces may be formed on a first side of the first semiconductor die, where the first side includes integrated circuitry coupled to the conductive traces. Moreover, conductive pads may be formed on a surface of the molding, which is coplanar with the first side. The conductive pads are coupled to first ends of the TMVs, where second ends of the TMVs are coupled to bond wires connected to one or more second semiconductor dies that the first semiconductor die carries. Conductive bumps can be formed on the conductive traces and pads such that the first semiconductor die and the molding attached thereto can be directly attached to a printed circuit board.

Abstract: Semiconductor device assemblies with improved ground connections, and associated systems and methods are disclosed. In one embodiment, a semiconductor device assembly may include one or more semiconductor dies mounted on an upper surface of a package substrate. Further, the package substrate includes a bond pad disposed on the upper surface, which may be designated as a ground node for the semiconductor device assembly. The bond pad may be electrically connected to an electromagnetic interference (EMI) shield of the semiconductor device assembly through a conductive component attached to the bond pad and configured to be in contact with the EMI shield at a sidewall surface or a top surface of the semiconductor device assembly, thereby forming the ground connection. Such ground connection may reduce a processing time to form the EMI shield while improving yield and reliability performance of the semiconductor device assemblies.

Abstract: A semiconductor package includes a first semiconductor die, a semiconductor device comprising a second semiconductor die, and one or more wire bond structures. The wire bond structure includes a bond interface portion. The wire bond structure is arranged next to the first semiconductor die. The first semiconductor die and the bond interface portion of the wire bond structure are arranged at the same side of the semiconductor device. An interface contact structure of the semiconductor device is electrically connected to the wire bond structure.

Abstract: A semiconductor package may include a first die disposed on a package substrate, a second die stacked on the first die, and a first position checker disposed on the package substrate. The first position checker may indicate a first position allowable range in which a first side of the first die can be located.