Abstract: A semiconductor light emitting element includes an optical waveguide having a first and second waveguide provided with a width that allows propagation of light in a second-order mode or higher and a multimode optical interference waveguide provided with a wider width than the first and second waveguide and arranged at a position therebetween. The semiconductor light emitting element further includes a first optical loss layer facing the first waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the first waveguide in the second-order mode or higher and a second optical loss layer facing the second waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the second waveguide in the second-order mode or higher, the active-layer crossing direction being orthogonal to a surface of an active layer.

Abstract: The present invention relates to a semiconductor laser device capable of reducing a measurement error of a temperature detecting element for detecting the temperature of a semiconductor laser element and accurately controlling the temperature of the semiconductor laser element. The semiconductor laser device is used for optical analysis and includes: a semiconductor laser element; a temperature detecting element that detects the temperature of the semiconductor laser element; output terminals that output the output of the temperature detecting element to the outside; wires that electrically connect the temperature detecting element and the output terminals; and a heat capacity increasing part that is provided interposed between the temperature detecting element and output terminal, and the output terminal, and contacts with at least part of the wires to increase the heat capacity of the wires.

Abstract: In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

Abstract: A laser device comprises a first optical cavity comprising a first gain medium and a second optical cavity comprising a second gain medium. The first gain medium and the second gain medium generate light at respective different ranges of wavelengths. A synchronizer is optically coupled to both the first optical cavity and the second optical cavity and is configured to synchronize and mode-lock light from the first optical cavity and the second optical cavity. The laser device also includes a first optical filter and a second optical filter to filter the light from the first optical cavity and the second optical cavity respectively to output first filtered light pulses at a first predetermined range of wavelengths and second filtered light pulses at a second predetermined range of wavelengths.

Abstract: An optoelectronic device includes an off-cut III-V semiconductor substrate, a set of epitaxial layers formed on the off-cut III-V semiconductor substrate, and a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers. The same or another optoelectronic device includes a semiconductor substrate; a laser, epitaxially grown on the semiconductor substrate and having a laser resonant cavity; a semiconductor device, epitaxially grown on the semiconductor substrate and separated from the laser by a single trench having a first vertical wall abutting the laser and a second vertical wall abutting the semiconductor device; and at least one coating on at least one of the first vertical wall or the second vertical wall. The laser resonant cavity of the laser has a horizontal portion parallel to the semiconductor substrate, and each of the first vertical wall and the second vertical wall is oriented perpendicular to the semiconductor substrate.

Abstract: An object of the present invention is to provide a method for manufacturing an optical device having a laser diode, which method is suitable for mass production, and an optical device having a laser diode which allows accurate property evaluations thereof with small measurement errors. Specifically, the method includes: an etching process of etching a semiconductor lamination unit to form a mesa structure having a resonator end face, thereby forming a laser diode; and a reflecting layer forming process of forming a light reflecting layer such that the light reflecting layer covers entire side surfaces of the mesa structure, wherein the semiconductor lamination unit has a substate, a n-type clad layer including a nitride semiconductor layer having n-type conductivity, a light-emitting layer including at least one quantum well, and a p-type clad layer including a nitride semiconductor layer having p-type conductivity, laminated in this order.

Abstract: Multi-Channels coherent beam combining (CBC) using a mechanism for phase and/or polarization locking that uses a reference optical beam and an array of optical detectors each detector being configured and located to detect overall intensity of an optical interference signal caused by interfering of the reference beam and a beam of the respective channel, where the fast intensity per-channel detection allows simultaneous and quick phase/polarization locking of all channels for improving beam combining system performances.

Abstract: A QCL may include a substrate, and a semiconductor layer adjacent the substrate. The semiconductor layer may define branch active regions, and a stem region coupled to output ends of the branch active regions. Each branch active region may have a number of stages less than 30.

Abstract: A QCL may include a substrate, and a semiconductor layer adjacent the substrate. The semiconductor layer may define branch active regions, and a stem region coupled to output ends of the branch active regions. Each branch active region may have a number of stages less than 30.

Abstract: A surface-emitting semiconductor light-emitting device includes a first semiconductor layers, an active layer on the first semiconductor layer, a photonic crystal layer on the active layer and a second semiconductor layer on the photonic crystal layer. The photonic crystal layer include first protrusions in a first region and second protrusions in a second region. A spacing of adjacent first protrusions is greater than a spacing of adjacent second protrusions. The second semiconductor layer includes a first layer and a second layer on the first layer. The first layer covers first and second protrusions so that a first space remains between the adjacent first protrusions. The first layer includes a first portion provided between the adjacent second protrusions. The second layer includes a second portion provided between the adjacent first protrusions. The first space between the adjacent first protrusions is filled with the second portion of the second layer.

Abstract: An electrical drive circuit may charge one or more inductive elements, where the electrical drive circuit includes the one or more inductive elements and a capacitive element in series between the one or more inductive elements and the optical load, and where the electrical drive circuit is connected to one or more sources. The electrical drive circuit may generate, after the charging and for a first time interval, a main electrical pulse. The electrical drive circuit may discharge, after the charging and for a second time interval, the one or more inductive elements to provide a compensation electrical pulse, where at least a portion of the second time interval overlaps with the first time interval. The electrical drive circuit may combine the main electrical pulse and the compensation electrical pulse into a combined electrical pulse. The electrical drive circuit may provide the combined electrical pulse to the optical load.

Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A Raman fiber laser source (RFLS) is configured with a feeding fiber delivering MM pump radiation to an inner cladding of double-clad MM Raman fiber laser. The MM pump radiation has a sufficient power to produce Raman scattering in the MM Raman fiber converting the pump radiation to a MM signal radiation at a Raman-shifted wavelength ?ram which is longer than a wavelength ?pump of the pump radiation. The RFLS further has a pair of spaced reflectors defining therebetween a resonator for the signal radiation at a 1st Stokes wavelength and flanking at least part of the MM core of the Raman fiber which is provided with a central core region which is doped with impurities for enhancing Raman process. The reflectors and central core region are dimensioned to correspond to the fundamental mode of the MM signal radiation.

Abstract: A 1.3 ?m-band wavelength-tunable DBR laser in which a wavelength-tunable amount is extended is disclosed. The wavelength-tunable DBR laser according to an embodiment of the present invention is a wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region. At a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer is further included. At a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer is further included.

Abstract: A method, apparatus, and system for an external cavity laser with a Michelson Interferometer.

Abstract: The present disclosure relates to an approach for monitoring the output power of a VCSEL or VCSEL array in a relatively compact, low profile package. A VCSEL device or VCSEL package of the present disclosure may generally be configured with a photodiode for monitoring output power of one or more VCSELs. In some embodiments, one or more VCSEL devices may be arranged over or on a photodetector, such that the photodetector is configured to detect light emitted through a bottom of the VCSEL. In such embodiments, the VCSEL device may have a patterned bottom metal layer and/or an etched substrate to allow light to pass below or behind the VCSEL to the photodiode. In other embodiments, a photodetector may be arranged on a submount adjacent one or more VCSELs, and may be configured to detect light reflected via a diffuser in order to monitor output power.

Abstract: The disclosed diode laser packages include a carrier having an optics-mounting surface to which first and second sets of collimating and turning optics are mounted. The carrier includes a heatsink receptacle medially located between the first and second sets. A cooling plenum has a diode-mounting surface and includes heatsink material disposed in the heatsink receptacle. The cooling plenum further has an inlet, an outlet, and a coolant passageway defined between the inlet and the outlet. The coolant passageway is sized to receive the heatsink material disposed in heatsink receptacle. Multiple semiconductor laser diode devices are each mounted atop the diode-mounting surface and positioned for bidirectional emission toward the first and second sets of collimating and turning optics. The multiple semiconductor laser diode devices are thermally coupled to the heatsink material through which coolant is deliverable by the coolant passageway.

Abstract: A wavelength selection method for a tunable laser includes: obtaining a target wavelength; and calculating target resistance values of two thermistors, respectively, corresponding to the target wavelength. Each of the two thermistors is used to monitor the temperature of a corresponding one of two wavelength selection components. Each of the target resistance values is calculated according to a relationship between a wavelength drift and a resistance change of the corresponding thermistor and according to an initial wavelength and an initial resistance value of the corresponding thermistor corresponding to the initial wavelength. The method further includes: heating the two wavelength selection components to control their temperatures until real-time resistance values of the two thermistors reach the target resistance values, respectively; and stabilizing the real-time resistance values at the target resistance values and outputting a laser beam having the target wavelength.

Abstract: A non-reciprocal optical assembly for injection locking a laser to a resonator is described. The laser emits a light beam, and the resonator receives the light beam and returns a feedback light beam to the laser such that the feedback light beam causes injection locking. The non-reciprocal optical assembly is interposed between and optically coupled to the laser and the resonator. The non-reciprocal optical assembly includes a first port that receives the light beam from the laser, and a second port that outputs the light beam to the resonator and receives the feedback light beam from the resonator. The first port also outputs the feedback light beam to the laser. The light beam passes through the non-reciprocal optical assembly with a first power loss, and the feedback light beam passes through the non-reciprocal optical assembly with a second power loss (the first power loss differs from the second power loss).

Abstract: A diode laser arrangement includes a diode laser device, first and second cooling elements and at least one spacing device. The laser device and spacing device are mutually spaced apart between the first and second cooling elements. The laser device and the spacing device are disposed on respective first and second outer surfaces of respective cooling elements. The first and second cooling elements cool the laser device. The laser device has first and second diode main surfaces. The first diode main surface is on the first outer surface in a first front region and/or the second diode main surface is on the second outer surface in a second front region. The spacing device places the first outer surface in the first front region parallel to the first diode main surface, and/or the second outer surface in the second front region parallel to the second diode main surface.