Abstract: Semiconductor devices using a dielectric structure and methods of manufacturing are described herein. The semiconductor devices are directed towards gate-all-around (GAA) devices that are formed over a substrate and are isolated from one another by the dielectric structure. The dielectric structure is formed over the fin between two GAA devices and cuts a gate electrode that is formed over the fin into two separate gate electrodes. The two GAA devices are also formed with bottom spacers underlying source/drain regions of the GAA devices. The bottom spacers isolate the source/drain regions from the substrate. The dielectric structure is formed with a shallow bottom that is located above the bottoms of the bottom spacers.

Abstract: A semiconductor device including a semiconductor die, an encapsulant and a redistribution structure is provided. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the semiconductor die and the encapsulant and is electrically connected to the semiconductor die. The redistribution structure includes a dielectric layer, a conductive via in the dielectric layer and a redistribution wiring covering the conductive via and a portion of the dielectric layer. The conductive via includes a pillar portion embedded in the dielectric layer and a protruding portion protruding from the pillar portion, wherein the protruding portion has a tapered sidewall.

Abstract: The present disclosure, in some embodiments, relates to an integrated circuit. The integrated circuit includes first and second source/drain regions within a substrate. A gate structure is over the substrate between the first and second source/drain regions. A middle-end-of-the-line (MEOL) structure is over the second source/drain region. The MEOL structure has a bottommost surface that continuously extends in a first direction from directly contacting a top of the second source/drain region to laterally past an outer edge of the second source/drain region. A conductive structure is on the MEOL structure. A second gate structure is separated from the gate structure by the second source/drain region. The conductive structure continuously extends in a second direction over the MEOL structure and past opposing sides of the second gate structure. A plurality of conductive contacts are configured to electrically couple an interconnect wire and the MEOL structure along through the conductive structure.

Abstract: A method for forming a mask layer above a semiconductor fin structure is disclosed. In one aspect the method includes forming a first set of spacers and a second set of spacers arranged at the side surfaces of the first set of spacers, providing a first filler material between the second set of spacers, etching a top portion of the first filler material to form recesses between the second set of spacers, and providing a second filler material in the recesses, the second filler material forming a set of sacrificial mask lines. Further, the method includes recessing a top portion of at least the first set of spacers, providing a mask layer material between the sacrificial mask lines, and removing the sacrificial mask lines and the first filler material.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a plurality of first semiconductor layers and a plurality of second semiconductor layers on a substrate, and the first semiconductor layers and the second semiconductor layers are alternately stacked. The method also includes forming a dummy gate structure over the first semiconductor layers and the second semiconductor layers. The method further includes removing a portion of the first semiconductor layers and second semiconductor layers to form a trench, and removing the second semiconductor layers to form a recess between two adjacent first semiconductor layers. The method includes forming a dummy dielectric layer in the recess, and removing a portion of the dummy dielectric layer to form a cavity. The method also includes forming an inner spacer layer in the cavity.

Abstract: A display apparatus includes a first area including at least one opening, a second area disposed around the first area, and a third area disposed between the first area and the second area. The second area includes a plurality of display elements, and the third area includes a groove. The display apparatus further includes a thin film encapsulation layer covering the plurality of display elements and including an inorganic encapsulation layer and an organic encapsulation layer, a planarization layer disposed over the groove, a first insulating layer disposed over the thin film encapsulation layer, a second insulating layer disposed over the planarization layer, and a cover layer overlapping the first end of the planarization layer and partially overlapping the first insulating layer and the second insulating layer. A first end of the planarization layer overlaps the thin film encapsulation layer, and the second insulating layer includes a first through hole.

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

Abstract: Provided are a gate structure and a method of forming the same. The gate structure includes a gate dielectric layer, a metal layer, and a cluster layer. The metal layer is disposed over the gate dielectric layer. The cluster layer is sandwiched between the metal layer and the gate dielectric layer, wherein the cluster layer at least includes an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer. In addition, a semiconductor device including the gate structure is provided.

Abstract: An organic light emitting diode display according to exemplary embodiments includes: a data wire including a data line disposed in a display area and a first data line disposed in a peripheral area; a driving voltage wire including a driving voltage line disposed in the display area and a first driving voltage line disposed in the peripheral area and extending in a first direction; and a driving low voltage wire including a cathode covering the display area and formed to the peripheral area and a first driving low voltage connection portion connected to the cathode and disposed in the peripheral area, wherein the first driving low voltage connection portion includes a first portion and a second portion having a different width than the first portion.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. An isolation structure surrounds a lower fin portion, the isolation structure comprising an insulating material having a top surface, and a semiconductor material on a portion of the top surface of the insulating material, wherein the semiconductor material is separated from the fin. A gate dielectric layer is over the top of an upper fin portion and laterally adjacent the sidewalls of the upper fin portion, the gate dielectric layer further on the semiconductor material on the portion of the top surface of the insulating material. A gate electrode is over the gate dielectric layer.

Abstract: An organic electroluminescence device includes a substrate, an organic electroluminescence element disposed on the substrate, a protecting portion configured to protect the organic electroluminescence element, and a resin portion mainly composed of a resin material. The protecting portion includes a first layer mainly composed of a silicon-based inorganic material containing nitrogen, a second layer mainly composed of silicon oxide or aluminum oxide, and a third layer mainly composed of a silicon-based inorganic material containing nitrogen, and the resin portion is disposed at a side surface of the second layer.

Abstract: An alignment structure for a semiconductor device and a method of forming same are provided. A method includes forming an isolation region over a substrate and forming an alignment structure over the isolation region. Forming the alignment structure includes forming a sacrificial gate electrode layer over the substrate and the isolation region. The sacrificial gate electrode layer is patterned to form a plurality of first sacrificial gates over the isolation region. At least one of the plurality of first sacrificial gates is reshaped. The at least one of the plurality of first sacrificial gates is disposed at an edge of the alignment structure in a plan view. A sidewall of the at least one of the plurality of first sacrificial gates comprises a notch at an interface between the at least one of the plurality of first sacrificial gates and the isolation region.

Abstract: A method of manufacturing a batch of component carriers is disclosed. The method includes providing a plurality of separate wafer structures, each comprising a plurality of electronic components, simultaneously laminating the wafer structures with at least one electrically conductive layer structure and at least one electrically insulating layer structure, and singularizing a structure resulting from the laminating into the plurality of component carriers, each comprising at least one of the electronic components, a part of the at least one electrically conductive layer structure and a part of the at least one electrically insulating layer structure.

Abstract: A display device and a method of manufacturing the same are provided. A display device includes: a plastic substrate including: a display portion including organic light emitting diodes, and a pad portion including chip-on-films, a lower protective member attached to an entire lower surface of the plastic substrate, and an upper protective member attached to an upper surface of the plastic substrate, the upper protective member covering at least the display portion and both edges of the pad portion.

Abstract: A display device includes: a substrate; a first pixel unit disposed over the substrate and including at least two pixel areas emitting lights of different colors; a second pixel unit neighboring the first pixel unit and including at least two pixel areas emitting lights of different colors; a first opposite electrode disposed on an area corresponding to the first pixel unit; and a second opposite electrode disposed on an area corresponding to the second pixel unit, wherein the first pixel unit includes a first pixel area and a second pixel area that neighbor each other, the second pixel unit includes a third pixel area and a fourth pixel area that neighbor each other, and a first distance between the first pixel area and the second pixel area is less than a second distance between the third pixel area and the first pixel area.

Abstract: The present invention relates to a method for producing a solid state solar cell, including the steps of providing a conductive support layer or current collector, applying a metal oxide layer on the conducting support layer, applying at least one sensitizer layer onto the metal oxide layer or onto a first optional layer covering the metal oxide layer, the first optional layer including a charge transporting layer, applying a second optional layer onto the sensitizer layer, the second optional layer being selected from a charge transporting layer, a protective layer, or a combination of both layers, and providing a counter electrode or a metal electrode onto the sensitizer layer or the second optional layer. The at least one sensitizer layer includes an organic-inorganic or metal halide perovskite and is treated by the application of a vacuum before the annealing of the sensitizer.

Abstract: A display apparatus includes a substrate, a driving thin-film transistor arranged on the substrate and including a driving semiconductor layer and a driving gate electrode, a first scanning line arranged on the first substrate and which extends in a first direction, a data line which extends in a second direction that intersects with the first direction, a node connection line arranged in the same layer as the first scanning line, and a shielding conductive layer arranged between the data line and the node connection line and disposed in the same layer as the driving gate electrode, where an end of the node connection line is connected to the driving gate electrode through a first node contact hole.

Abstract: An integrated circuit (IC) device includes first and second fin-type semiconductor active regions on a substrate. A plurality of first semiconductor patterns are provided, which are stacked on the first fin-type active region as a first plurality of spaced-apart channel regions of a first FINFET. A plurality of second semiconductor patterns are provided, which are stacked on the second fin-type active region as a second plurality of spaced-apart channel regions of a second FINFET. A first gate structure is provided on the plurality of first semiconductor patterns. This first gate structure includes a first material region, which at least partially fills spaces between the first plurality of spaced-apart channel regions. A second gate structure is also provided on the plurality of second semiconductor patterns. The second gate structure includes second and third material regions, which at least partially fill spaces between the second plurality of spaced-apart channel regions.

Abstract: A display apparatus includes a pixel electrode and a opposite electrode facing each other; a thin-film transistor connected to the pixel electrode; a contact electrode connected to the opposite electrode and spaced apart from the pixel electrode; an auxiliary electrode connected to the contact electrode and spaced apart from the thin-film transistor; an intermediate layer with which light is emitted, the intermediate layer including: an emission layer, and a first functional layer corresponding to the pixel electrode and the contact electrode, the first functional layer defining an opening portion at which the contact electrode is exposed; and a multi-insulating layer between the thin-film transistor and the pixel electrode, between the auxiliary electrode and the contact electrode, and defining a contact opening at which the auxiliary electrode is connected to the contact electrode, the contact opening corresponding to the opening portion of the intermediate layer.

Abstract: A magnetic random access memory chip having magnetic memory elements with different performance characteristics formed on the same chip. The magnetic memory elements can be magnetic random access memory elements. The memory chip can have a first set of magnetic random access chips having a first set of physical and performance characteristics formed in a first area of the sensor and a second set of magnetic random access chips having a second set of performance characteristics formed in a second area of the chip. For example, the first set of magnetic random access memory elements can have performance characteristics that match or exceed those of a non-volatile memory, whereas the second set of magnetic random access memory elements can have performance characteristic that match or exceed those of a static random access memory element.