Abstract: Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.

Abstract: In a processing chamber, a processing target substrate is placed and a substrate processing is performed. A holder is configured to store therein an ionic liquid as some or all of components to be consumed or degraded by the substrate processing within the processing chamber.

Abstract: The invention provides a method and system to remotely monitor a plasma (3) comprising a magnetic field antenna (2) positioned in the near electromagnetic field of a coupled plasma source wherein the magnetic field antenna is a magnetic loop antenna placed in the near electromagnetic field and measure near field signals emitted from the plasma source. A radio system (1) is utilised to analyse the low power signal levels across a wide frequency band. Plasma paramaters such as series, or geometric, resonance plasma and electron-neutral collision frequencies are evaluated via a fitting of resonant features present on higher harmonics of the driving frequency to identify arcing, pump or matching failure events, common in fabrication plasma systems.

Abstract: A member for a semiconductor manufacturing apparatus includes a plate, at least one through hole, and an insulating pipe (cylindrical member). The plate is formed of an alumina sintered body, has a front surface serving as a wafer placement surface, and includes therein an electrode. The through hole penetrates through the plate in a thickness direction. The insulating pipe is formed of an alumina sintered body and is joined to a rear surface of the plate with a first joining layer having a ring shape and formed of an alumina sintered body interposed between the insulating pipe and the rear surface of the plate.

Abstract: A plasma processing system is provided. The plasma processing system includes an edge ring assembly that includes a dielectric ring and a coil. The coil is embedded within the dielectric ring. The coil generates a magnetic field that affects the ions in the proximity of the plasma sheath and in turn increases the fabrication yield of the semiconductor process.

Abstract: An etching apparatus and an etching method thereof are provided. An end point detector detects a light intensity at a specific wavelength for light generated when an etching process is performed on a material to be processed, and generates an end point detection signal. The material to be processed includes a material layer and at least one mask layer formed on the material layer. A control device determines an etching completion time of the mask layer according to the end point detection signal, calculates a thickness of the mask layer according to the etching completion time, and adjusts an etching time of the material layer according to the thickness of the mask layer.

Abstract: A robotic treatment system includes a robotic arm comprising a tool mount, and a plurality of tools, each of the plurality of tools removably connectable to the tool mount. The system further includes a distribution assembly, which includes a distribution source, a distribution feed cable, a distribution return cable, and a plurality of distribution valves. Each of the plurality of distribution valves regulates a distribution flow through the distribution feed cable to one of the plurality of tools or the distribution return cable from one of the plurality of tools. The system further includes a supply assembly, which includes a supply controller, a plurality of substrate feeders, and a plurality of supply feed cables. The system further includes a main controller, the main controller in operable communication with the robotic arm, the supply controller, and each of the plurality of distribution valves.

Abstract: A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes a power input port for connection to an electrical power delivering grid, at least two power output ports each for connection to one of the plasma processing chambers, and a controller configured to control the power converter to deliver the bipolar output power to the power output ports, using at least one of control parameters including power, voltage, current, excitation frequency, and threshold for protective measures. The controller includes a virtual power supply for each power output port, and each virtual power supply includes a separate complete set of all fixed and time varying parameters and internal states associated with the operation of the individual power output port.

Abstract: A film forming apparatus for performing a predetermine film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.

Abstract: A plasma processing apparatus for processing a substrate using a plasma, comprising: a process chamber in which the processing takes place; a plasma source for providing a plasma to the process chamber; a substrate mount within the process chamber for holding the substrate, the substrate mount comprising a surface having a plurality of apertures.

Abstract: Embodiments of liners for use in a process chamber are provided herein. In some embodiments, a liner for use in a process chamber includes an upper liner having a top plate with a central opening and a tubular body extending downward from an outer peripheral portion of the top plate, wherein the top plate has a contoured inner surface having a first step with a first inner diameter and a second step with a second inner diameter greater than the first inner diameter, and wherein the tubular body has an opening for transferring a substrate therethrough; and a lower liner abutting a bottom surface of the tubular body, wherein the lower liner extends radially inward from the tubular body and includes a plurality of radial slots arranged around the lower liner, wherein the upper liner and the lower liner form a C-shaped cross-section.

Abstract: There is provided a technique, which includes: a reaction tube configured to form a process chamber in which a substrate is processed; an electrode fixing jig installed outside the reaction tube and configured to fix at least two electrodes for forming plasma in the process chamber; and a heating device installed outside the electrode fixing jig and configured to heat the reaction tube, wherein the at least two electrodes include at least one electrode to which a predetermined potential is applied and at least one electrode to which a reference potential is applied, and wherein a surface area of the at least one electrode to which the predetermined potential is applied is two times or more than a surface area of the at least one electrode to which the reference potential is applied.

Abstract: Exemplary semiconductor processing chambers may include a gasbox characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel extending about the central aperture. The annular channel may be fluidly accessible from the first surface of the gasbox. The gasbox may further define a plurality of outlet apertures extending from the annular channel through the second surface of the gasbox.

Abstract: A plasma processing apparatus of an embodiment includes a chamber body, a stage, a gas supply system, and a plasma generator. The chamber body provides an inner space thereof as a chamber. The stage is provided in the chamber. In the stage, a flow channel for a refrigerant is formed. The gas supply system is configured to supply a first gas causing capillary condensation thereof in a porous film and a second gas for etching a porous film to the chamber. The plasma generator is configured to generate plasma of a gas supplied to the chamber. The gas supply system provides a first flow passage connecting a source of the second gas to the chamber, a second flow passage connecting a source of the first gas to the first flow passage, and a third flow passage connecting a gas discharging apparatus to the second flow passage.

Abstract: An atomic layer deposition (ALD) apparatus includes a light source disposed at an upper portion of a section, a wafer supporting part disposed at a lower portion of the section, and a lens pocket between the light source and the wafer supporting part, and including a frame part and a transparent panel, the lens pocket including a pocket space having sides defined by the frame part and a bottom defined by the transparent panel.

Abstract: A plasma processing apparatus includes a processing chamber, a conductive annular member, a microwave radiating mechanism and a plasma detector. The processing chamber has a ceiling plate with an opening. The conductive annular member is disposed at the opening while being insulated from the ceiling plate. The microwave radiating mechanism is disposed on the ceiling plate to be coaxial with a center of the conductive annular member and configured to radiate microwaves into the processing chamber. Further, a plasma detector is connected to the conductive annular member and configured to detect a state of generated plasma.

Abstract: Disclosed is a corrosion-resistant structure for a gas delivery system in a plasma processing apparatus. By providing a plating layer of corrosion-resistant material at the parts including the gas channel to avoid reacting with the delivered corrosive gas, metal and particle contaminations are reduced. By reversely mounting nozzles such that they reliably cover the plating layer inside the gas outlet holes, the disclosure prevents the corrosion-resistant material from being damaged by the plasma generated inside the cavity. By forming a corrosion-resistant yttrium oxide coating at the surfaces of the nozzles exposed to the cavity, the disclosure prevents the plasma from eroding the nozzles. The disclosure further leverages a flexible corrosion-resistant material, such as Teflon, to the sealing surfaces of the liner in contact with the dielectric window and the cavity, which improves the overall sealing effect of the liner.

Abstract: A chemical vapor deposition system for coating one or more workpieces is described herein. The deposition system includes a plurality of processing chambers which may be operated independently to increase throughput of the deposition system. Each chamber includes a modular fixture that is configured to maintain the workpieces in a predetermined arrangement which allows for a hollow cathode effect to be maintained in an Interior space of the chamber. The deposition system achieves significantly faster, higher-quality deposition and more complete, conformal coverage.

Abstract: Rapid plasma nitriding is achieved by harnessing the power and increased density of plasma discharges created by hollow cathodes. When opposing surfaces are maintained at the proper voltage, sub atmospheric pressure, and spacing, a phenomenon known as the hollow cathode effect creates additional hot oscillating electrons capable of multiple ionization events thereby increasing the number of ions and electrons per unit volume (plasma density). The present invention describes the harnessing of this phenomenon to rapidly plasma nitride metal surfaces and optionally rapidly deposit functional coatings in a continuous operation for duplex coatings.

Abstract: Introduced here is a plasma polymerization apparatus and process. Example embodiments include a vacuum chamber in a substantially symmetrical shape to a central axis. A rotation rack may be operable to rotate about the central axis of the vacuum chamber. Additionally, reactive species discharge mechanisms positioned around a perimeter of the vacuum chamber in a substantially symmetrical manner from the outer perimeter of the vacuum chamber may be configured to disperse reactive species into the vacuum chamber. The reactive species may form a polymeric multi-layer coating on surfaces of the one or more devices. Each layer may have a different composition of atoms to enhance the water resistance, corrosion resistance, and fiction resistance of the polymeric multi-layer coating.