Abstract: Methods, apparatus, systems, and articles of manufacture to manage heat in a CPU are disclosed. An example apparatus includes a metric collection agent to output a metric representative of a property of the central processor unit including a first core and a second physical core, the first physical core and the second physical core mapped to first and second logical cores by a map. A policy processor is to evaluate the first metric to determine whether to change the map to remap at least one of the first and second logical cores relative to the second one of the first and the second physical cores to move a process between the first and second physical cores to adjust the property, the moving of the process between the physical cores being transparent to an application/OS layer. A mapping controller is responsive to the policy processor to change the map.

Abstract: Materials that exhibit stress-induced porosity, and methods of making and using the same, are described.

Abstract: A system for monitoring one or more downhole parameters. The system includes a downhole base gauge configured to receive power from a surface power drive and to communicate data with a surface computing device and a plurality of downhole remote sensors coupled to the base gauge in series and configured to generate data indicative of one or more observable parameters. The base gauge is further configured to query one of the remote sensors and, in response to such a query, the remote sensor is configured to transmit data indicative of the observable parameter associated with that sensor to the base gauge.

Abstract: Methods, apparatus, systems, and articles of manufacture to manage heat in a CPU are disclosed. An example apparatus includes a metric collection agent to output a metric representative of a property of the central processor unit including a first core and a second physical core, the first physical core and the second physical core mapped to first and second logical cores by a map. A policy processor is to evaluate the first metric to determine whether to change the map to remap at least one of the first and second logical cores relative to the second one of the first and the second physical cores to move a process between the first and second physical cores to adjust the property, the moving of the process between the physical cores being transparent to an application/OS layer. A mapping controller is responsive to the policy processor to change the map.

Abstract: Processes for the removal of arsenic from aqueous solutions such as contaminated waters and process solutions are disclosed. Arsenic is removed from process solutions/effluents either by precipitation with a soluble iron compound, or solvent extraction and subsequent treatment with engineered materials, such as granular iron oxide. Arsenic may also be directly removed from arsenic contaminated ground and/or surface waters using engineered materials, especially by contacting ground and/or surface waters with silica, granular iron oxide and optionally natural zeolite in sequence. The treated solutions/effluents and waters may be released into the environment.

Abstract: An assembly for collecting data related to the condition of a lubricant inside of an electric motor including a gauge having an oil condition sensing probe extending into an interior of the electric motor so as to be immersed in the lubricant to determine at least one property of the lubricant and generate an electric signal in response thereto.

Abstract: The invention provides a process for the leaching of a laterite ore or concentrate for the recovery of value metals, at least one value metal being nickel. The laterite ore or concentrate is subjected to a leaching step with a lixiviant comprising hydrochloric acid to leach nickel from the laterite ore. Nickel is extracted with an oxime at a lower pH than other processes for extraction of nickel from solution, especially after separation of iron and cobalt values.

Abstract: Processes for the removal of arsenic from aqueous solutions such as contaminated waters and process solutions are disclosed. Arsenic is removed from process solutions/effluents either by precipitation with a soluble iron compound, or solvent extraction and subsequent treatment with engineered materials, such as granular iron oxide. Arsenic may also be directly removed from arsenic contaminated ground and/or surface waters using engineered materials, especially by contacting ground and/or surface waters with silica, granular iron oxide and optionally natural zeolite in sequence. The treated solutions/effluents and waters may be released into the environment.

Abstract: Methods, compositions, and kits for predicting and controlling fruit color in palm.

Abstract: A process for the extraction of alumina from an aluminum-bearing ore or concentrate, comprising the steps of leaching the aluminum-bearing ore or concentrate with a lixiviant of hydrochloric acid and magnesium chloride at atmospheric pressure at a temperature of from 90° C. to the boiling point of the solution and at an Eh of at least 200 mV. After a liquid/solids separation step, the solution obtained is subjected to steps for removal of iron and for recovery of alumina.

Abstract: The invention provides a process for the leaching of a laterite ore or concentrate for the recovery of value metals, at least one value metal being nickel. The laterite ore or concentrate is subjected to a leaching step with a lixiviant comprising hydrochloric acid to leach nickel from the laterite ore. Nickel is extracted with an oxime at a lower pH than other processes for extraction of nickel from solution, especially after separation of iron and cobalt values.

Abstract: The present invention is a new composition of matter and can be used as components of a capacitor. The dielectric properties possess in this material has improved tremendously as compared to the existing component. The finding of high dielectric permittivity in the present invention ceramic according to its formulation and processing technique that can operate or use at wide range frequencies and temperatures are very useful in electronic and electrical devices. The present invention is best for applications at the range of temperatures. The permittivity is recorded at 1 kHz are between ˜20,000 to ˜54,000 and almost constant over three decade of frequency. Thus, the dielectric permittivity obtained can be used as energy storage, sensor, electric filter, etc., besides minimizing the devices size.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.

Abstract: A system for communication in a wireless backhaul environment having a wireless mesh network connected in part to the Internet, comprising a communication topology having WiMAX gateway/base stations with multi-hop capability located at each corner, and communication cells each having a relay station and mobile nodes communicating to each other using WiMAX wireless technology, wherein the communication cells are arranged to be connected to each other in a grid fabric.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.

Abstract: The present invention is a new composition of matter and can be used as components of a capacitor. The dielectric properties possess in this material has improved tremendously as compared to the existing component. The finding of high dielectric permittivity in the present invention ceramic according to its formulation and processing technique that can operate or use at wide range frequencies and temperatures are very useful in electronic and electrical devices. The present invention is best for applications at the range of temperatures. The permittivity is recorded at 1 kHz are between ˜20,000 to ˜54,000 and almost constant over three decade of frequency. Thus, the dielectric permittivity obtained can be used as energy storage, sensor, electric filter, etc., besides minimizing the devices size.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.

Abstract: The present invention relates to a method of electronic data storage, integration, management, retrieval and organization that mimics the physical filing system through the use of account-centric non-table driven methodologies. The method of the present invention stores data related to the same account in an account-centric ledger file, where such ledger is a virtual folder that is being implemented using DBMS as the filing apparatus. The data as stored in the ledger can be retrieved as a whole when requested. Another embodiment of the present invention relates to a computer program having a module where execution of said module generates the method for storing, integrating, managing, retrieving and organizing data in accordance with the present invention.