Patents by Inventor Abhijit Basu Mallick
Abhijit Basu Mallick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230360967Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.Type: ApplicationFiled: May 9, 2022Publication date: November 9, 2023Applicant: Applied Materials, Inc.Inventors: Chandan Das, Susmit Singha Roy, Supriya Ghosh, John Sudijono, Abhijit Basu Mallick, Jiecong Tang
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Patent number: 11791155Abstract: Examples of the present technology include semiconductor processing methods to form diffusion barriers for germanium in a semiconductor structure. The methods may include forming a semiconductor layer stack from pairs of Si-and-SiGe layers. The Si-and-SiGe layer pairs may be formed by forming a silicon layer, and then forming the germanium barrier layer of the silicon layer. In some embodiments, the germanium-barrier layer may be less than or about 20 ?. A silicon-germanium layer may be formed on the germanium-barrier layer to complete the formation of the Si-and-SiGe layer pair. In some embodiments, the silicon layer may be an amorphous silicon layer, and the SiGe layer may be characterized by greater than or about 5 atom % germanium. Examples of the present technology also include semiconductor structures that include a silicon-germanium layer, a germanium-barrier layer, and a silicon layer.Type: GrantFiled: August 27, 2020Date of Patent: October 17, 2023Assignee: Applied Materials, Inc.Inventors: Huiyuan Wang, Susmit Singha Roy, Takehito Koshizawa, Bo Qi, Abhijit Basu Mallick, Nitin K. Ingle
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Patent number: 11781218Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material.Type: GrantFiled: December 11, 2020Date of Patent: October 10, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Huiyuan Wang, Susmit Singha Roy, Takehito Koshizawa, Bo Qi, Abhijit Basu Mallick
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Patent number: 11784042Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.Type: GrantFiled: October 6, 2022Date of Patent: October 10, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Eswaranand Venkatasubramanian, Yang Yang, Pramit Manna, Kartik Ramaswamy, Takehito Koshizawa, Abhijit Basu Mallick
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Patent number: 11769666Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.Type: GrantFiled: July 19, 2021Date of Patent: September 26, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Rui Cheng, Fei Wang, Abhijit Basu Mallick, Robert Jan Visser
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Patent number: 11756785Abstract: Exemplary methods of semiconductor processing may include etching one or more features partially through a dielectric material to expose material from one or more layer pairs formed on a substrate. The methods may include halting the etching prior to penetrating fully through the dielectric material, and prior to exposing material from all layer pairs formed on the substrate. The methods may include forming a layer of carbon-containing material on the exposed material from each of the one or more layer pairs having exposed material. The methods may include etching the one or more features fully through the dielectric material to expose material for each remaining layer pair formed on the substrate.Type: GrantFiled: August 20, 2021Date of Patent: September 12, 2023Assignee: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick
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Publication number: 20230279540Abstract: Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.Type: ApplicationFiled: December 15, 2021Publication date: September 7, 2023Applicants: Applied Materials, Inc., National University of SingaporeInventors: Vicknesh Sahmuganathan, Jiteng Gu, Zhongxin Chen, Kian Ping Loh, John Sudijono, Haisen Xu, Sze Chieh Tan, Yuanxing Han, Jiecong Tang, Eswaranand Venkatasubramanian, Abhijit Basu Mallick
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Patent number: 11732352Abstract: Hydrogen free (low-H) silicon dioxide layers are disclosed. Some embodiments provide methods for forming low-H layers using hydrogen-free silicon precursors and hydrogen-free oxygen sources. Some embodiments provide methods for tuning the stress profile of low-H silicon dioxide films. Further, some embodiments of the disclosure provide oxide-nitride stacks which exhibit reduced stack bow after anneal.Type: GrantFiled: February 11, 2021Date of Patent: August 22, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Zeqing Shen, Bo Qi, Abhijit Basu Mallick, Nitin K. Ingle
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Publication number: 20230260800Abstract: Hard masks and methods of forming hard masks are described. The hard mask has an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa. The method comprises exposing a substrate to a deposition gas comprising a dopant gas or a precursor (solid (e.g. Alkylborane compounds) or liquid (e.g. Borazine)), a carbon gas and argon at a temperature less than or equal to 550 C, and igniting a plasma from the deposition gas to form an ultrananocrystalline diamond film having an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa.Type: ApplicationFiled: February 15, 2022Publication date: August 17, 2023Applicants: Applied Materials, Inc., National University of SingaporeInventors: Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Jiteng Gu, Kian Ping Loh, Abhijit Basu Mallick, John Sudijono
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Publication number: 20230235452Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.Type: ApplicationFiled: January 27, 2022Publication date: July 27, 2023Applicant: Applied Materials, Inc.Inventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Abhijit Basu Mallick, John Sudijono
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Patent number: 11705335Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.Type: GrantFiled: April 20, 2022Date of Patent: July 18, 2023Assignee: Applied Materials, Inc.Inventors: Srinivas Gandikota, Abhijit Basu Mallick, Swaminathan Srinivasan, Rui Cheng, Susmit Singha Roy, Gaurav Thareja, Mukund Srinivasan, Sanjay Natarajan
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Patent number: 11702751Abstract: A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.Type: GrantFiled: August 10, 2020Date of Patent: July 18, 2023Assignee: Applied Materials, Inc.Inventors: Bo Qi, Huiyuan Wang, Yingli Rao, Abhijit Basu Mallick
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Publication number: 20230207314Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.Type: ApplicationFiled: December 27, 2021Publication date: June 29, 2023Applicant: Applied Materials, Inc.Inventors: Chandan Das, Susmit Singha Roy, Bhaskar Jyoti Bhuyan, Supriya Ghosh, Jiecong Tang, John Sudijono, Abhijit Basu Mallick, Mark Saly
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Patent number: 11682554Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a boron-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the boron-containing precursor at a temperature above about 250° C. The methods may include forming a silicon-and-carbon-containing layer on the substrate.Type: GrantFiled: April 20, 2021Date of Patent: June 20, 2023Assignee: Applied Materials, Inc.Inventors: Zeqing Shen, Bo Qi, Abhijit Basu Mallick
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Patent number: 11676813Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the silicon-containing precursor and the boron-containing precursor. The dopant-containing precursor may include one or more of carbon, nitrogen, oxygen, or sulfur. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The silicon-and-boron material may include greater than or about 1 at. % of a dopant from the dopant-containing precursor.Type: GrantFiled: September 18, 2020Date of Patent: June 13, 2023Assignee: Applied Materials, Inc.Inventors: Aykut Aydin, Rui Cheng, Yi Yang, Krishna Nittala, Karthik Janakiraman, Bo Qi, Abhijit Basu Mallick
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Patent number: 11676858Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high quality gapfill. Some embodiments utilize chemical vapor deposition, plasma vapor deposition, physical vapor deposition and combinations thereof to deposit the gapfill. The gapfill is of high quality and similar in properties to similarly composed bulk materials.Type: GrantFiled: June 29, 2021Date of Patent: June 13, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Samuel E. Gottheim, Eswaranand Venkatasubramanian, Pramit Manna, Abhijit Basu Mallick
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Publication number: 20230175120Abstract: Methods of depositing an adamantane film are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which an adamantane seed layer is deposited on a substrate, converting to a diamond nuclei layer having an increased crystallinity relative to the adamantane seed layer and then grown into full nanocrystalline diamond film from the diamond nuclei layer.Type: ApplicationFiled: December 5, 2022Publication date: June 8, 2023Applicants: Applied Materials, Inc., National University of SingaporeInventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Abhijit Basu Mallick, John Sudijono, Jiteng Gu, Kian Ping Loh
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Publication number: 20230170217Abstract: Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.Type: ApplicationFiled: January 25, 2023Publication date: June 1, 2023Applicants: Applied Materials, Inc., National University of SingaporeInventors: Vicknesh Sahmuganathan, Jiteng Gu, Eswaranand Venkatasubramanian, Kian Ping Loh, Abhijit Basu Mallick, John Sudijono, Zhongxin Chen
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Patent number: 11658026Abstract: Methods for depositing a silicon-containing film on a substrate are described. The method comprises heating a processing chamber to a temperature greater than or equal to 200° C.; maintaining the processing chamber at a pressure of less than or equal to 300 Torr; coflowing a silicon precursor and nitrous oxide (N2O) into the processing chamber, and depositing a conformal silicon-containing film on the substrate. The silicon-containing film has dielectric constant (k-value) in a range of from about 3.8 to about 4.0, has a breakdown voltage of greater than 8 MV/cm at a leakage current of 1 mA/cm2 and has a leakage current of less than 1 nA/cm2 at 2 MV/cm.Type: GrantFiled: October 23, 2020Date of Patent: May 23, 2023Assignee: Applied Materials, Inc.Inventors: Zeqing Shen, Bo Qi, Abhijit Basu Mallick
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Patent number: 11655537Abstract: Methods for filling a substrate feature with a carbon gap fill, while leaving a void, are described. Methods comprise flowing a process gas into a high density plasma chemical vapor deposition (HDP-CVD) chamber, the chamber housing a substrate having at least one feature, the process gas comprising a hydrocarbon reactant, generating a plasma, and depositing a carbon film.Type: GrantFiled: October 26, 2020Date of Patent: May 23, 2023Assignee: Applied Materials, Inc.Inventors: Zeqing Shen, Bo Qi, Abhijit Basu Mallick