Abstract: A tool with a through hole includes a base and a diamond component held by the base, and when the length of the diamond component along a center line of the through hole is denoted as L1 and the maximum value of a diameter of a circle having the same area as a region surrounded by an outer edge of the diamond component in a cross section having the center line as a normal line is denoted as M1, the ratio L1/M1 between L1 and M1 is 0.8 or more.

Abstract: A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.

Abstract: A turning tool includes: a holder portion; and a cutting edge portion fixed to the holder portion, wherein the cutting edge portion is composed of a synthetic single-crystal diamond, and the cutting edge portion has a nose curvature having a curvature radius of more than or equal to 0.1 mm and less than or equal to 1.2 mm, and the nose curvature satisfies at least one of a condition that a direction of a line of intersection between the rake face and a bisecting cross section of a vertex angle of the nose curvature is within ±10° relative to a <110> direction of the synthetic single-crystal diamond, and a condition that the direction of the line of intersection between the rake face and the bisecting cross section of the vertex angle of the nose curvature is within ±10° relative to a <100> direction of the synthetic single-crystal diamond.

Abstract: In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than ?5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.

Abstract: Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.

Abstract: A single-crystal diamond includes n types of regions different in total concentration of an impurity, the n types of regions being observed in an observed surface being in parallel to a (110) face. Each of the n types of regions has an area not smaller than 0.1 ?m2. At least one of a first line, a second line, and a third line on the observed surface crosses a boundary between the n types of regions at least four times. The first line, the second line, and the third line are in parallel to a <?110> direction and have a length of 1 mm. A midpoint of the first line corresponds to the center of gravity of the observed surface. The second line and the third line are distant from the first line by 300 ?m in a <001> direction and a <00?1> direction, respectively.

Abstract: A single-crystal diamond material has a transmittance of light with a wavelength of greater than or equal to 410 nm and less than or equal to 750 nm of less than or equal to 15% for any wavelength, and is at least either of an electrical insulator according to optical evaluation and an electrical insulator according to electrical evaluation. A criterion of the optical evaluation can be a transmittance of light with a wavelength of 10.6 ?m of greater than or equal to 1%. A criterion of the electrical evaluation can be an average resistivity of greater than or equal to 1×106 ?cm. Accordingly, a single-crystal diamond material having a low transmittance of light in the entire region of the visible light region and exhibiting a black color is provided.

Abstract: A composite diamond body includes a diamond base material and a stable layer disposed on the diamond base material. The stable layer may have a thickness of 0.001 ?m or more and less than 10 ?m, and may include a plurality of layers. A composite diamond tool includes the composite diamond body. There are thus provided highly wear-resistant composite diamond body and composite diamond tool that are even applicable to mirror-finish planarization of a workpiece which reacts with diamond to cause the diamond to wear.

Abstract: A single-crystal diamond includes a pair of main surfaces facing each other, an impurity concentration being changed along a first direction in each of the main surfaces.

Abstract: A flip-flop circuit is disclosed. The flip-flop circuit includes a single-input inverter, a dual-input inverter, a single-input tri-state inverter, a dual-input tri-state inverter, and two single-event transient (SET) filters. The single-input tri-state inverter receives an input signal D. The dual-input tri-state inverter includes a first input, a second input and an output, wherein the first input receives output signals from the dual-input inverter and the second input receives output signals from the dual-input inverter via the first SET filter. The output of the dual-input tri-state inverter sends output signals to a first input of the dual-input inverter and a second input of the dual-input inverter via the second SET filter. The single-input inverter receives inputs from the dual-input inverter to provide an output signal Q for the flip-flop circuit.

Abstract: A method for processing a workpiece by using a diamond tool comprising nano-polycrystalline diamond or vapor-phase synthesized single crystal diamond, the nano-polycrystalline diamond comprising 10 ppm or more and 1000 ppm or less of nitrogen atoms, the vapor-phase synthesized single crystal diamond comprising 1 ppm or more and 100 ppm or less of nitrogen atoms, in processing the workpiece, the diamond tool having a temperature of 400° C. or lower at a contact point of the workpiece and the diamond tool, a spatial region within a distance of 3 cm from the contact point having an oxygen concentration of 20% or less.

Abstract: In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than ?5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.

Abstract: Single crystal diamond of which hardness and chipping resistance have been improved in a balanced manner, a method for manufacturing the single crystal diamond, and a tool containing the diamond are provided. Single crystal diamond contains nitrogen atoms, and a ratio of the number of isolated substitutional nitrogen atoms in the single crystal diamond to the total number of nitrogen atoms in the single crystal diamond is not lower than 0.02% and lower than 40%.

Abstract: In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than ?5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.

Abstract: A method for producing a diamond single crystal includes implanting an ion other than carbon into a surface of a diamond single crystal seed substrate and thereby decreasing the transmittance of light having a wavelength of 800 nm, the surface having an off-angle of 7 degrees or less with respect to a {100} plane, and homoepitaxially growing a diamond single crystal on the ion-implanted surface of the seed substrate using a chemical vapor synthesis under synthesis conditions where the ratio NC/NH of the number of carbon-containing molecules NC to the number of hydrogen molecules NH in a gas phase is 10% or more and 40% or less, the ratio NN/NC of the number of nitrogen molecules NN to the number of carbon-containing molecules NC in the gas phase is 0.1% or more and 10% or less, and the seed substrate temperature T is 850° C. or more and less than 1000° C.

Abstract: Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.

Abstract: A single-crystal diamond includes a pair of main surfaces facing each other, an impurity concentration being changed along a first direction in each of the main surfaces.

Abstract: A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.

Abstract: A single crystal diamond (10) is provided as a single crystal diamond into which a defect portion (11) is introduced. The defect portion (11) can be detected by a phase difference occurring when the single crystal diamond (10) is irradiated with circularly polarized light. In the single crystal diamond (10), a maximum value of average values of the phase differences measured within a measurement region (M) formed in a shape of a square having a side length of 1 mm is 30 nm or more.

Abstract: A single crystal diamond has a surface. In the single crystal diamond, a measurement region is defined in the surface, the measurement region includes a portion exhibiting a transmittance that is highest in the single crystal diamond and a portion exhibiting a transmittance that is lowest in the single crystal diamond, the measurement region has a plurality of square regions that are continuously arranged and each have a side having a length of 0.2 mm, and an average value of transmittances in each of the plurality of square regions is measured, wherein assuming that the average value of the transmittances in one square region is defined as T1 and the average value of the transmittances in another square region adjacent to the one square region is defined as T2, a relation of ((T1?T2)/((T1+T2)/2)×100)/0.2?20 (%/mm) is satisfied throughout the measurement region.