Abstract: Provided is a method for altering a targeted site of a DNA in a cell, including a step of stimulating the cell with a factor inducing a DNA modifying enzyme endogenous to the cell, and bringing a complex of a nucleic acid sequence-recognizing module specifically binding to a target nucleotide sequence in a given DNA and a DNA modifying enzyme-binding module bonded to each other into contact with the DNA to convert one or more nucleotides in the targeted site to other one or more nucleotides or delete one or more nucleotides, or insert one or more nucleotides into the targeted site.

Abstract: A photodetector includes a substrate, a material layer, a first electrode made of a metal, a core, a second electrode and a light absorption layer made of graphene. The first electrode, the core, and the material layer constitute a hybrid plasmonic waveguide, and the light absorption layer is disposed thereon. Light guided in the hybrid plasmonic waveguide is absorbed by the light absorption layer, photoelectrically converted by the PTE effect, and extracted as an electric signal from the first electrode and the second electrode.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: A semiconductor integrated circuit includes a first conduction-type semiconductor region, a second conduction-type first impurity region, and a guard ring formed using a first conduction-type second impurity region so as to form a protection device of an electrostatic protection circuit. The first impurity region is formed inside the semiconductor region to have a rectangular planar structure with long and short sides. The guard ring is formed inside the semiconductor region to surround the periphery of the first impurity region. A weak spot is formed on the short side of the rectangular planar structure of the first impurity region. A plurality of electrical contacts are formed in a first portion of the guard ring which faces the long side of the rectangle. A plurality of electrical contracts are not formed in a second portion of the guard ring which faces the weak spot formed on the short side of the rectangle.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: A semiconductor integrated circuit includes a first conduction-type semiconductor region, a second conduction-type first impurity region, and a guard ring formed using a first conduction-type second impurity region so as to form a protection device of an electrostatic protection circuit. The first impurity region is formed inside the semiconductor region to have a rectangular planar structure with long and short sides. The guard ring is formed inside the semiconductor region to surround the periphery of the first impurity region. A weak spot is formed on the short side of the rectangular planar structure of the first impurity region. A plurality of electrical contacts are formed in a first portion of the guard ring which faces the long side of the rectangle. A plurality of electrical contracts are not formed in a second portion of the guard ring which faces the weak spot formed on the short side of the rectangle.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: A semiconductor integrated circuit includes a first conduction-type semiconductor region, a second conduction-type first impurity region, and a guard ring formed using a first conduction-type second impurity region so as to form a protection device of an electrostatic protection circuit. The first impurity region is formed inside the semiconductor region to have a rectangular planar structure with long and short sides. The guard ring is formed inside the semiconductor region to surround the periphery of the first impurity region. A weak spot is formed on the short side of the rectangular planar structure of the first impurity region. A plurality of electrical contacts are formed in a first portion of the guard ring which faces the long side of the rectangle. A plurality of electrical contracts are not formed in a second portion of the guard ring which faces the weak spot formed on the short side of the rectangle.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Abstract: There is provided a display driver device (liquid crystal driver) causing no degradation in display image quality even when a plurality of signal lines (source lines) of a display panel are divided into a plurality of groups as a countermeasure against EMI. With a liquid crystal display driver device (the liquid crystal driver) for generating image signals to be impressed to respective signal lines of a display panel upon receiving display image data, and outputting the image signals in a lump, corresponding to every one line, according to an output timing signal inputted from outside, output amplifiers, in the last stage of the liquid crystal driver, for outputting the image signals, respectively, are divided into a plurality of groups, and the output amplifiers of respective groups are caused to undergo a periodical change in output sequence while the respective image signals are slightly staggered in output timing by the group.

Abstract: A semiconductor integrated circuit includes a first conduction-type semiconductor region, a second conduction-type first impurity region, and a guard ring formed using a first conduction-type second impurity region so as to form a protection device of an electrostatic protection circuit. The first impurity region is formed inside the semiconductor region to have a rectangular planar structure with long and short sides. The guard ring is formed inside the semiconductor region to surround the periphery of the first impurity region. A weak spot is formed on the short side of the rectangular planar structure of the first impurity region. A plurality of electrical contacts are formed in a first portion of the guard ring which faces the long side of the rectangle. A plurality of electrical contracts are not formed in a second portion of the guard ring which faces the weak spot formed on the short side of the rectangle.

Abstract: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.