Patents by Inventor Akinobu Tanaka
Akinobu Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100261123Abstract: In a chemically amplified resist composition comprising a base resin, an acid generator, and a solvent, 1,400-5,000 pbw of the solvent is present per 100 pbw of the base resin, and the solvent comprises at least 60 wt % of PGMEA and ethyl lactate, and 0.2-20 wt % of a high-boiling solvent. A resist pattern is formed by coating the resist composition on a substrate, prebaking, patternwise exposure, post-exposure baking, development, and heat treatment.Type: ApplicationFiled: April 8, 2010Publication date: October 14, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Akinobu Tanaka, Tamotsu Watanabe, Satoshi Watanabe
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Publication number: 20100167207Abstract: There is disclosed a chemically amplified positive resist composition to form a chemically amplified resist film to be used in a lithography, wherein the chemically amplified positive resist composition comprises at least, (A) a base resin, insoluble or poorly soluble in an alkaline solution, having a repeating unit whose phenolic ydroxyl group is protected by a tertiary alkyl group, while soluble in an alkaline solution when the tertiary alkyl group is removed; (B) an acid generator; (C) a basic component; and (D) an organic solvent, and a solid component concentration is controlled so that the chemically amplified resist film having the film thickness of 10 to 100 nm is obtained by a spin coating method.Type: ApplicationFiled: November 23, 2009Publication date: July 1, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Akinobu Tanaka, Takanobu Takeda, Satoshi Watanabe
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Publication number: 20100009271Abstract: There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.Type: ApplicationFiled: June 15, 2009Publication date: January 14, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTDInventors: Takanobu Takeda, Satoshi Watanabe, Tamotsu Watanabe, Akinobu Tanaka, Keiichi Masunaga, Ryuji Koitabashi
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Publication number: 20100009299Abstract: The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.Type: ApplicationFiled: June 3, 2009Publication date: January 14, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Satoshi Watanabe, Akinobu Tanaka, Takeru Watanabe, Takeshi Kinsho
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Publication number: 20090214960Abstract: In a chemically amplified resist composition comprising a base resin, an acid generator, and a solvent, 1400-5000 pbw of the solvent is present per 100 pbw of the resin. The solvent comprises a major proportion of PGMEA, 10-40 wt % of ethyl lactate, a total of PGMEA and ethyl lactate being at least 60 wt %, and 0.2-20 wt % of a high-boiling solvent.Type: ApplicationFiled: February 20, 2009Publication date: August 27, 2009Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takanobu Takeda, Akinobu Tanaka
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Publication number: 20080241751Abstract: A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 ?m, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.Type: ApplicationFiled: March 31, 2008Publication date: October 2, 2008Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takanobu TAKEDA, Tamotsu WATANABE, Ryuji KOITABASHI, Keiichi MASUNAGA, Akinobu TANAKA, Osamu WATANABE
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Patent number: 6841334Abstract: Disclosed are novel onium salts represented by general formula (R)3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of forming the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.Type: GrantFiled: October 10, 2003Date of Patent: January 11, 2005Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone CorporationInventors: Fujio Yagihashi, Tomoyoshi Furihata, Jun Watanabe, Akinobu Tanaka, Yoshio Kawai, Tadahito Matsuda
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Publication number: 20040076905Abstract: Disclosed are novel onium salts represented by general formula (R)3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of forming the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.Type: ApplicationFiled: October 10, 2003Publication date: April 22, 2004Inventors: Fujio Yagihashi, Tomoyoshi Furihata, Jun Watanabe, Akinobu Tanaka, Yoshio Kawai, Tadahito Matsuda
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Patent number: 6667415Abstract: Disclosed are novel tert-butyl 4,4-bis(4′-hydroxyphenyl)pentanoate derivatives represented by the following general formula (I); wherein R1 represents a protective group which can be readily eliminated under an acidic condition, and R2 represents a hydrogen atom, a lower alkyl group or a lower alkoxy group: and high energy radiation-responsive positive resist materials using said novel derivatives as dissolution inhibitors.Type: GrantFiled: September 2, 1994Date of Patent: December 23, 2003Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone Corp.Inventors: Fujio Yagihashi, Jun Watanabe, Minoru Takamizawa, Akinobu Tanaka, Yoshio Kawai, Tadahito Matsuda
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Publication number: 20030096189Abstract: Disclosed are novel onium salts represented by general formula (R) 3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of foxing the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.Type: ApplicationFiled: March 11, 1997Publication date: May 22, 2003Inventors: FUJIO YAGIHASHI, TOMOYOSHI FURIHATA, JUN WATANABE, AKINOBU TANAKA, YOSHIO KAWAI, TADAHITO MATSUA
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Patent number: 5880169Abstract: The invention provides a novel sulfonium salt having at least one acid labile group attached to a phenyl group in a molecule and a normal, branched or cyclic C.sub.1 -C.sub.20 alkylsulfonate anion. The novel sulfonium salt is effective for increasing the dissolution contrast between exposed and unexposed areas. Upon exposure, it generates an alkylsulfonic acid which is a weak acid, minimizing the influence of side reaction and deactivation during PEB step. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.Type: GrantFiled: November 1, 1996Date of Patent: March 9, 1999Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone Corp.Inventors: Yoichi Osawa, Satoshi Watanabe, Katsuya Takemura, Shigehiro Nagura, Akinobu Tanaka, Yoshio Kawai
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Patent number: 5856561Abstract: Novel bisphenol carboxylic acid tertiary ester derivatives having two aromatic ether groups and an ester group which are all replaced by acid labile groups are provided. The derivatives are used as a dissolution inhibitor in a chemically amplified positive resist composition comprising an organic solvent, an alkali soluble resin, and a photo-acid generator. Since the dissolution inhibitor has a highly reactive acetal group as an acid labile group, its coupling-off rapidly takes place after exposure. The dissolution inhibitor itself is less alkali soluble and its acid decomposition product is a phenol derivative having a carboxylic acid group with high alkali solubility, leading to a high dissolution contrast.Type: GrantFiled: September 17, 1996Date of Patent: January 5, 1999Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone Corp.Inventors: Takesi Nagata, Satoshi Watanabe, Katsuya Takemura, Tsunehiro Nishi, Shigehiro Nagura, Akinobu Tanaka, Yoshio Kawai
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Patent number: 5824824Abstract: The invention provides a novel sulfonium salt having at least one acid labile group attached to a phenyl group in a molecule and a C.sub.2 -C.sub.20 alkylsulfonate or arylsulfonate anion whose alkyl or aryl has as a substituent an electron withdrawing group such as fluorine and nitro group. The novel sulfonium salt is effective for increasing the dissolution contrast between exposed and unexposed areas. Upon exposure, it generates a substituted alkyl or arylsulfonic acid which is a weak acid, minimizing the influence of side reaction and deactivation during PEB step. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.Type: GrantFiled: November 1, 1996Date of Patent: October 20, 1998Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone Corp.Inventors: Yoichi Osawa, Satoshi Watanabe, Kaysuya Takemura, Shigehiro Nagura, Akinobu Tanaka, Yoshio Kawai
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Patent number: 5679496Abstract: A chemically amplified positive resist composition contains a novel trifluoromethanesulfonic or p-toluenesulfonic acid sulfonium salt having at least one tert-butoxycarbonylmethoxy group as an acid labile group. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.Type: GrantFiled: December 4, 1995Date of Patent: October 21, 1997Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone Corp.Inventors: Youichi Ohsawa, Satoshi Watanabe, Katsuyuki Oikawa, Akinobu Tanaka, Yoshio Kawai, Jiro Nakamura
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Patent number: 5629134Abstract: In a chemically amplified positive resist composition comprising an organic solvent, an alkali soluble resin, an acid generator, and an optional dissolution inhibitor, a salt of a pyridine which may have an alkyl, alkoxy, amino or dialkylamino group with an alkylsulfonic acid, arylsulfonic acid or halogen atom is blended. Because of high sensitivity to deep UV and resolution and elimination of the PED problem causing T-top pattern configuration and the skirting phenomenon, the resist composition is improved in dimensional precision and lends itself to fine patterning.Type: GrantFiled: October 6, 1995Date of Patent: May 13, 1997Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone Corp.Inventors: Katsuyuki Oikawa, Toshinobu Ishihara, Fujio Yagihashi, Akinobu Tanaka, Yoshio Kawai, Jiro Nakamura
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Patent number: 5624787Abstract: A chemically amplified, positive resist composition contains a trifluoromethanesulfonic or p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salt and a nitrogenous compound. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.Type: GrantFiled: June 6, 1995Date of Patent: April 29, 1997Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone Corp.Inventors: Satoshi Watanabe, Katsuyuki Oikawa, Toshinobu Ishihara, Akinobu Tanaka, Tadahito Matsuda, Yoshio Kawai
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Patent number: 5612170Abstract: A positive resist composition based on a silicone polymer contains a photo acid generator which will decompose to generate an acid upon exposure to radiation. The silicone polymer includes hydroxybenzyl units wherein some OH groups are replaced by t-butoxycarbonyl, t-butoxycarbonylmethyl, trimethylsilyl or tetrahydropyranyl groups. In a first form, the photo acid generator is a specific onium salt having at least one phenyl group with a t-alkoxy, t-butoxycarbonyloxy or t-butoxycarbonylmethoxy substituent. In a second form, the composition further contains a nitrogenous compound. In a third form, the composition further contains a dissolution inhibitor in the form of a specific silicone compound. The composition is sensitive to high energy radiation and has high sensitivity and resolution.Type: GrantFiled: December 8, 1995Date of Patent: March 18, 1997Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone CompanyInventors: Katsuya Takemura, Junji Tsuchiya, Toshinobu Ishihara, Akinobu Tanaka, Yoshio Kawai, Jiro Nakamura
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Patent number: 5512417Abstract: A positive resist composition comprising a poly(p-hydroxystyrene) as matrix resin which is synthesized by an anionic polymerization method and has a weight average molecular weight of from 8,000 to 20,000, bis(p-t-butoxycarbonylmethyl)thymolphthalein as dissolution inhibitor, bis(p-t-butylphenyl)iodonium triflate as acid generator; a compound which contains one amino group and one carboxyl group to function as acid deactivator and propylene glycol monomethyl ether acetate as organic solvent.Type: GrantFiled: February 14, 1995Date of Patent: April 30, 1996Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone Corp.Inventors: Hiroshi Ban, Akinobu Tanaka, Fujio Yagihasi, Jun Watanabe, Minoru Takamizawa
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Patent number: 5457003Abstract: A resist material comprises a polysiloxane obtained by hydrolysis and condensation with dehydration of one or more alkoxysilanes having an oxirane ring, or of a mixture of the alkoxysilane(s) having an oxirane ring and one or more alkoxysilanes having no oxirane ring, and an acid generator. The resist material may contain one or more of a spectral sensitizer, an organic polymer having a hydroxyl group or an epoxy compound. Resist patterns are formed by coating an organic polymer on a substrate and then the resist material on the film of the organic polymer to form a two layer resist having a bottom layer of the organic polymer and top layer of the resist material, prebaking, imagewise exposing high radiation, postbaking, and developing the resist with alkaline solutions to remove an unexposed portion of the top layer, and dry etching the bottom layer using the relic of the resist material as a mask. the temperature of the post baking is preferably lower than that of the prebaking.Type: GrantFiled: July 30, 1993Date of Patent: October 10, 1995Assignee: Nippon Telegraph and Telephone CorporationInventors: Akinobu Tanaka, Hiroshi Ban, Jiro Nakamura, Takao Kimura, Yoshio Kawai
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Patent number: 5389492Abstract: A resist composition comprising a compound having an active hydrogen and an alkali-soluble siloxane polymer containing in the molecules thereof at least one unit selected from a unit represented by formula (I) and a unit represented by formula (II) ##STR1## wherein the X's are the same or different and each represents one member selected from the group consisting of hydrogen, ##STR2## (where R represents hydrogen, a hydrocarbon group, or a substituted hydrocarbon group); and a carboxyl group;R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, and R.sub.6 are the same or different and each represents one member selected from the group consisting of hydrogen, a hydroxyl group, a substituted or unsubstituted aliphatic hydrocarbon group, and a substituted or unsubstituted aromatic hydrocarbon group, provided that at least one of R.sub.1 to R.sub.6 is a hydroxyl group; andl, m, n, and p each is 0 or a positive integer, provided that l and m are not 0 at the same time.Type: GrantFiled: April 8, 1994Date of Patent: February 14, 1995Assignees: Fuji Photo Film Co., Ltd., Nippon Telegraph and Telephone CorporationInventors: Tadayoshi Kokubo, Atsushi Sakamoto, Akinobu Tanaka, Hiroshi Ban