Abstract: According to one embodiment, a pressure sensor includes a film part, and a sensing unit. A circumscribing rectangle circumscribing a configuration of a film surface of the film part has a first side, a second side, a third side connected to one end of the first side and one end of the second side, a fourth side connected to one other end of the first side and one other end of the second side, and a centroid of the circumscribing rectangle. The circumscribing rectangle includes a first region enclosed by the first side, line segments connecting the centroid to the one end of the first side, and to the one other end of the first side. The sensing unit includes sensing elements provided on a portion of the film surface overlapping the first region. Each sensing element includes a first, second magnetic layers, and a spacer layer.

Abstract: According to one embodiment, a pressure sensor includes a film part, and a sensing unit. A circumscribing rectangle circumscribing a configuration of a film surface of the film part has a first side, a second side, a third side connected to one end of the first side and one end of the second side, a fourth side connected to one other end of the first side and one other end of the second side, and a centroid of the circumscribing rectangle. The circumscribing rectangle includes a first region enclosed by the first side, line segments connecting the centroid to the one end of the first side, and to the one other end of the first side. The sensing unit includes sensing elements provided on a portion of the film surface overlapping the first region. Each sensing element includes a first, second magnetic layers, and a spacer layer.

Abstract: According to one embodiment, an inertial sensor includes a base portion, a weight portion, a connection portion, and a first sensing element unit. The connection portion connects the weight portion and the base portion and is capable of being deformed in accordance with a change in relative position of the weight portion with respect to the position of the base portion. The first sensing element unit is provided on a first portion of the connection portion and includes a first magnetic layer, a second magnetic layer, and a nonmagnetic first intermediate layer. The nonmagnetic first intermediate layer is provided between the first magnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a strain sensing element is provided on a film unit configured to be deformed. The strain sensing element includes a functional layer, a first magnetic layer, a second magnetic layer, and a spacer layer. The functional layer includes at least one of an oxide and a nitride. The second magnetic layer is provided between the functional layer and the first magnetic layer. A magnetization of the second magnetic layer is variable in accordance with a deformation of the film unit. The spacer layer is provided between the first magnetic layer and the second magnetic layer. At least a part of the second magnetic layer is amorphous and includes boron.

Abstract: According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

Abstract: An inertial sensor includes a base portion, a weight portion, a connection portion, and a first sensing element unit. The connection portion connects the weight portion and the base portion and is capable of being deformed in accordance with a change in relative position of the weight portion with respect to the position of the base portion. The first sensing element unit is provided on a first portion of the connection portion and includes a first magnetic layer, a second magnetic layer, and a nonmagnetic first intermediate layer. The nonmagnetic first intermediate layer is provided between the first magnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a pressure sensor includes a support, a film unit supported by the support, having an upper surface, and capable of being deformed, and a first sensing element provided on the upper surface. The first sensing element includes a first magnetic layer, a second magnetic layer provided apart from the first magnetic layer and a first intermediate unit including a first intermediate layer including a portion provided between the first and second magnetic layers. The first magnetic layer extends in a first direction parallel to the upper surface, and a first major axis length of the first magnetic layer is longer than a first minor axis length. The second magnetic layer extends in a second direction parallel to the upper surface and crossing the first direction, and a second major axis length of the second magnetic layer is longer than a second minor axis length.

Abstract: According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

Abstract: According to one embodiment, a pressure sensor includes a film part, and a sensing unit. A circumscribing rectangle circumscribing a configuration of a film surface of the film part has a first side, a second side, a third side connected to one end of the first side and one end of the second side, a fourth side connected to one other end of the first side and one other end of the second side, and a centroid of the circumscribing rectangle. The circumscribing rectangle includes a first region enclosed by the first side, line segments connecting the centroid to the one end of the first side, and to the one other end of the first side. The sensing unit includes sensing elements provided on a portion of the film surface overlapping the first region. Each sensing element includes a first, second magnetic layers, and a spacer layer.

Abstract: A pressure sensor device comprises a support substrate including a thin film area which is bendable by a pressure, a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, a spacer layer provided between the reference layer and the free layer, a shield provided on a side of the support substrate.

Abstract: According to one embodiment, a microphone package includes: a pressure sensing element including a film and a device; and a cover. The film generates strain in response to pressure. The device includes: a first electrode; a second electrode; and a first magnetic layer. The first magnetic layer is provided between the first electrode and the second electrode and has a first magnetization. The cover includes: an upper portion; and a side portion. The side portion is magnetic and provided depending on the first magnetization and the second magnetization.

Abstract: According to one embodiment, a pressure sensor includes a film part, and a sensing unit. A circumscribing rectangle circumscribing a configuration of a film surface of the film part has a first side, a second side, a third side connected to one end of the first side and one end of the second side, a fourth side connected to one other end of the first side and one other end of the second side, and a centroid of the circumscribing rectangle. The circumscribing rectangle includes a first region enclosed by the first side, line segments connecting the centroid to the one end of the first side, and to the one other end of the first side. The sensing unit includes sensing elements provided on a portion of the film surface overlapping the first region. Each sensing element includes a first, second magnetic layers, and a spacer layer.

Abstract: According to one embodiment, a sensor includes a deformable film portion, a first sensing element and a second sensing element. The first sensing element is fixed to the film portion, and includes a first magnetic layer of a first material, a first opposing magnetic layer, and a first intermediate layer. The first intermediate layer is provided between the first magnetic layer and the first opposing magnetic layer. The second sensing element is fixed to the film portion, and includes a second magnetic layer of a second material, a second opposing magnetic layer, and a second intermediate layer. The second material is different from the first material. The second intermediate layer is provided between the second magnetic layer and the second opposing magnetic layer.

Abstract: According to one embodiment, a microphone package includes: a pressure sensing element including a film and a device; and a cover. The film generates strain in response to pressure. The device includes: a first electrode; a second electrode; and a first magnetic layer. The first magnetic layer is provided between the first electrode and the second electrode and has a first magnetization. The cover includes: an upper portion; and a side portion. The side portion is magnetic and provided depending on the first magnetization and the second magnetization.

Abstract: According to one embodiment, a strain sensing element includes a film unit being deformable, a first and a second magnetic unit, and a strain sensor. The first magnetic unit is provided on the film unit and is arranged with the film unit in a first direction. The first magnetic unit includes a first magnetic body layer and a first intermediate magnetic layer. The second magnetic unit is provided on the film unit and is arranged with the first magnetic unit in a second direction crossing the first direction. The second magnetic unit includes a second magnetic body layer and a second intermediate magnetic layer. The strain sensor is provided on the film unit between the first magnetic unit and the second magnetic unit. An electrical characteristic of the strain sensor changes according to a deformation of the film unit.

Abstract: According to one embodiment, a strain sensing element provided at a deformable film part, includes a stacked body, a first electrode, and a second electrode. The stacked body includes a first magnetic layer, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. A magnetization direction of the first magnetic layer changes in accordance with a deformation of the film part. The first electrode includes a first alloy layer including a first alloy including Ta and Mo. The first electrode is electrically connected to the stacked body. The second electrode is electrically connected to the stacked body.

Abstract: According to one embodiment, a pressure sensor includes: a support section; a film section; and a strain sensing element. The film section is supported by the support section and deformable. The film section includes a first film and a second film. The first film includes a first region located in a central part and a second region located in a peripheral part around the first region. The second film is provided on the first region. The strain sensing element is provided on part of the second region. The strain sensing element includes a first magnetic layer; a second magnetic layer; and an intermediate layer. Magnetization of the first magnetic layer changes in response to deformation of the second region. The intermediate layer is provided between the first magnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a strain sensor includes: a base; a strain sensing element; a magnetic field sensing element; and a processing unit. The strain sensing element includes a first magnetic layer having a first magnetization; a second magnetic layer having a second magnetization; and a first intermediate layer. In the strain sensing element an angle between a direction of the first magnetization and a direction of the second magnetization changes in accordance with a strain. The magnetic field sensing element includes a third magnetic layer having a third magnetization; a fourth magnetic layer having a fourth magnetization; and a second intermediate layer. In the magnetic field sensing an angle between a direction of the third magnetization and a direction of the fourth magnetization changes in accordance with a magnetic field.

Abstract: According to one embodiment, a strain sensing element includes a film unit, and a sensing unit. The film unit has a film surface and is capable of being deformed. The sensing unit includes a first sensing element and a second sensing element. The first sensing element is provided between a part of the film unit and the second sensing element. The first sensing element includes a first magnetic layer having a changeable magnetization with a deformation of the film unit, a second magnetic layer provided apart from the first magnetic layer, and a first spacer layer provided between the first and second magnetic layers. The second sensing element includes a third magnetic layer having a changeable magnetization with the deformation of the film unit, a fourth magnetic layer provided apart from the third magnetic layer, and a second spacer layer provided between the third and fourth magnetic layers.

Abstract: According to one embodiment, a pressure sensor includes a base unit, a film unit, and a plurality of sensing elements. The plurality of sensing elements is provided on the film unit radially with respect to a centroid of the film unit. The plurality of sensing elements has a first side and a second side intersecting the first side. Each of the plurality of sensing elements includes a first magnetic layer, a second magnetic layer, and an intermediate layer. Each of the plurality of sensing elements has a shape anisotropy characterized by a length of the first side being longer than a length of the second side intersecting the first side. The plurality of sensing elements is provided at lines having radial configurations extending from the centroid to have a prescribed angle between the first side and the line.