Abstract: A robot system includes: a robot control unit that controls an operation of a robot, using a control parameter for the robot; a safety monitoring unit that monitors the operation of the robot, using a safety monitoring parameter for the robot; a control parameter setting unit that sets the control parameter to the robot control unit; and a safety monitoring parameter setting unit that acquires the control parameter set to the robot control unit, from the robot control unit, and sets at least one of a plurality of parameters included in the acquired control parameter, as the safety monitoring parameter to the safety monitoring unit.

Abstract: To provide a vehicle seat in which the rotation device is disposed without compromising the passenger comfort in the cabin, a vehicle seat includes: a floor panel which has a sheet shape, constitutes a floor surface of a cabin, and has an elongated hole extending linearly; a slide device provided below the floor panel to be slidable along the elongated hole; a rotation device provided on the slide device to be rotatable about a rotation axis below the floor panel, the rotation axis extending vertically and overlapping with the elongated hole; a support leg which is columnar in shape, is provided on the rotation device along the rotation axis, and extends to above the floor panel by passing through the elongated hole; and a seat main body which is joined to an upper end of the support leg and on which an occupant can be seated.

Abstract: An optical transmission system including an optical transmission device and an optical reception device that receives, via an optical transmission line, a signal transmitted from the optical transmission device, the optical transmission system including a transmission-mode selection unit that selects transmission mode information in descending order of priority out of transmission mode information, which is combinations of a plurality of parameters concerning transmission performance, the transmission mode information being a plurality of kinds of the transmission mode information common to the transmission performance of the optical transmission device and the optical reception device, a signal transmission unit that transmits, to the optical reception device, a signal modulated based on the selected transmission mode information, and a signal reception unit that receives the signal and modulates the received signal based on the transmission mode information selected by the transmission-mode selection unit.

Abstract: The present invention pertains to a fungicide that causes little environmental pollution and has excellent safety, a fungicide product having a fungicide layer containing said fungicide, and a fungicidal coating containing said fungicide, the fungicide being represented by formula (1) Ln2xFe2(1-x)O3 (in formula (1), Ln is a rare earth element selected from the group consisting of lanthanum, praseodymium, neodymium and yttrium; and x is a number that is at least 0.45 and is less than 1.00).

Abstract: An information processing apparatus includes: a receiver configured to receive an input operation of a user; and a display controller configured to display, in a display area having a first area and a second area, an image. The display controller includes: an icon controller configured to display, in the second area, first icons associated one-to-one with different layouts in splitting the first area, and a first splitter configured to split the first area into split areas based on a layout corresponding to a selected first icon to when the receiver receives an input operation for selecting any of the first icons.

Abstract: The present invention pertains to an antimicrobial agent that causes little environmental pollution and has excellent safety, an antimicrobial product having an antimicrobial layer containing said antimicrobial agent, and an antimicrobial coating containing said antimicrobial agent, the antimicrobial agent being represented by formula (1) Ln2xFe2(1-x)O3 (in formula (1), Ln is a rare earth element selected from the group consisting of lanthanum, praseodymium, neodymium and yttrium; and x is a number that is at least 0.55 and is less than 1.00).

Abstract: [Object] To detect airspeed and an airflow direction with respect to an airframe of a motorized aircraft with high accuracy without increasing the cost and weight and rapidly control attitudes of an electric propulsion system and the airframe in accordance with fluctuations of the airspeed and airflow direction.

Abstract: To provide an electric aircraft and an aerodynamic performance control method therefor that are capable of optimizing aerodynamic performance of a wing in each flight phase or an emergency such as gust action without depending on the shape of a wing. To provide an electric aircraft and an aerodynamic performance control method therefor that are capable of optimizing aerodynamic performance of a wing in each flight phase or an emergency such as gust action without depending on the shape of a wing.

Abstract: A battery anomaly detection device includes: an alternating-current (AC) impedance measurer that measures AC impedance of a battery cell; and an anomaly determiner that determines whether the AC impedance is within a reference range, and when the AC impedance is not within the reference range, determines that the battery cell is an anomalous cell.

Abstract: A semiconductor device has a first wiring extending in a first direction on a nitride semiconductor layer. A source electrode is electrically connected to the first wiring and extends in a second direction. A drain electrode extends in the second direction and includes a first and second portion extending in the second direction, spaced from each other in the first direction. An element isolation region is in the second nitride semiconductor layer between the first and second portions. A third portion extends in the second direction on the first and second portions. A gate electrode extends in the second direction on the second nitride semiconductor layer between the source electrode and the drain electrode. The portion includes holes therein aligned with each other along the second direction with the spacing between adjacent holes in the second direction increasing with increasing distance in the second direction from the first wiring.

Abstract: A power transmission device having: a case formed by assembling a first case member and a second case member; and a shaft member supported by the case, the power transmission device comprising: a protrusion provided to the first case member and protruding in the axial direction along to the direction of assembling the case; and a recess provided to the second case member and recessed in the axial direction. The shaft member is supported by the protrusion in the recess.

Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a first electrode film provided on the first insulating film, a second electrode film provided on the first electrode film, and a first field plate electrode provided on the second electrode film. A lower end of the first field plate electrode is located on a second surface of the first electrode film, the second surface being in contact with the second electrode film, rather than a first surface of the first electrode film, the first surface being in contact with the first insulating film.

Abstract: Provided is an ink composition that is obtained by using an ultraviolet-curable urethane acrylate resin together with a tungsten-based infrared-absorbing pigment and an ultraviolet-absorbing fluorescent pigment. Specifically, this infrared-absorbing ultraviolet-curable ink contains: a tungsten-based infrared-absorbing pigment; a UV-absorbing fluorescent pigment; a UV-curable urethane acrylate resin; and a UV-curable acrylic resin that does not contain a urethane bond.

Abstract: A semiconductor device includes a nitride semiconductor element, a first diode, and a second diode; the nitride semiconductor element includes a conductive mounting bed, a semiconductor substrate formed on the mounting bed, a first nitride semiconductor layer, a second nitride semiconductor layer, a first major electrode, a second major electrode, a first gate electrode, and a second gate electrode; the first diode includes a first anode electrode electrically connected to the mounting bed, and a first cathode electrode electrically connected to the first major electrode; and the second diode includes a second anode electrode electrically connected to the mounting bed, and a second cathode electrode electrically connected to the second major electrode.

Abstract: An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

Abstract: The present invention provides: an airbag cover which is formed by integrally joining a first base fabric and a second base fabric having mutually different characteristics, and has a joint portion that ensures high productivity in mass production; a method for manufacturing the airbag cover; and an airbag device. The present invention relates to an airbag cover for storing a bag-shaped cushion which is rolled up or folded before being inflated and deployed by a gas supplied from an inflater, and relates to a method for manufacturing the airbag cover. The airbag cover is characterized by comprising a first base fabric made of a plain-woven fabric or a non-woven fabric made from chemical fibers, and a second base fabric containing fibers different from the fibers constituting the first base fabric, and having an initial tensile resistance value higher than an initial tensile resistance value of the first base fabric.

Abstract: A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.

Abstract: A wafer processing method includes emitting a laser beam along an annular line that is a predetermined distance inward of the outer circumferential edge of the first wafer to form, in the first wafer, an annular first modified layer and a first crack extending from the first modified layer to make an appearance on the front surface, thereby causing the first wafer to become warped at an outer circumferential region thereof that lies closer to the outer circumferential edge than does the first modified layer and the first crack; bonding the front surface of the first wafer to a second wafer to form a bonded wafer stack; and grinding a rear surface of the first wafer of the bonded wafer stack to thin the first wafer to a finish thickness.

Abstract: According to one embodiment, a nitride semiconductor device includes a first semiconductor layer having a heterojunction, a second semiconductor layer on the first semiconductor layer and having another heterojunction, a drain electrode on the second semiconductor layer, a source electrode provided on the first semiconductor layer, a gate electrode provided on the first semiconductor layer between the drain electrode and the source electrode, and a first insulating film between the gate electrode and the drain electrode covering the first semiconductor layer and the second semiconductor layer. The second semiconductor layer being separated from the gate electrode by a portion of the insulating film. A distance from the second semiconductor layer to the gate electrode is shorter than a distance from the drain electrode to the gate electrode.

Abstract: A transmitter transmits a signal including type 1 identification information. A receiver receives a signal from the base station device. An extractor extracts, from the received signal, type 2 identification information, and a measurer measures a period of time after the extractor extracts the type 2 identification information. When the type 2 identification information is extracted by the extractor, the transmitter transmits a signal including the type 2 identification information. When the period of time measured by the measurer exceeds a threshold value, the transmitter transmits a signal including the type 1 identification information.