Abstract: Provided is a defect detection device capable of measuring the volume of surface defects. The defect detection device includes: an imaging device configured to image an image of an inspection object; a binarization processing unit configured to subject the image to first and second binarization processing by use of different first and second binarization thresholds, so as to calculate first and second sizes for an identical defect in the image; a ratio calculation unit configured to calculate a first ratio of the second size to the first size; and a depth determination unit configured to determine a depth of the defect depending on the first ratio.

Abstract: A gaming machine includes: a casing top having an upper door device capable of being opened/closed; a casing bottom having a lower door device capable of being opened/closed; an upper door lock mechanism capable of locking the upper door device; and an lower door lock mechanism capable of locking the lower door device, wherein the upper door lock mechanism is provided inside the casing bottom.

Abstract: A plurality of projections is arranged in a matrix on the upper surface of the housing of a contactless charging unit (110). When supplying power wirelessly to an onboard power reception device, a beam emission unit in a beam reception and emission unit (120) emits a laser beam progressing along the upper surface of a power transmission unit (170) to scan the upper part of the entire upper surface of the power transmission unit (170). When receiving a reflected beam, the beam reception unit in the beam reception and emission unit (120) sends the results of beam reception to a determination unit. The determination unit determines the presence or absence of a foreign substance supported on at least one projection existing on the upper surface of the contactless charging unit (110) on the basis of the results of beam reception.

Abstract: In one example, an image processing device includes a reduction scaler unit that reduces or maintains the image data of an input image. An enlargement scaler unit enlarges or maintains the image data and outputs the image data as the image data of an output image. The reduction scaler unit converts the resolution of the input image to an intermediate resolution in accordance with first image parameters related to an image to be supplied from the enlargement scaler unit, the intermediate resolution being a resolution for performing writing on the memory unit. The enlargement scaler unit converts the intermediate resolution of a memory-held image read from the memory unit to the resolution of the output image, in accordance with second image parameters related to an image to be supplied from the reduction scaler unit.

Abstract: Provided is an image processing apparatus including a subtitle information acquiring unit configured to acquire subtitle information to be combined with a main stereoscopic picture, a parallax acquiring unit configured to acquire a parallax causing the subtitle information to be stereoscopically displayed, a stereoscopic subtitle picture generating unit configured to generate a stereoscopic subtitle picture to be stereoscopically displayed at a display position according to the parallax based on the subtitle information, and an edge processing unit configured to change intensity of an edge in the stereoscopic subtitle picture according to the parallax.

Abstract: A carbon film forming method including: forming a first carbon film so that the first carbon film is embedded in the step shape portion by supplying a film forming gas including a hydrocarbon-based carbon source gas to the process target object; etching the first carbon film so that a V-shaped etching region, which is wide in a frontage portion of the step shape portion and becomes narrow as going to a bottom portion of the step shape portion, is formed in the first carbon film existing within the step shape portion, by supplying an etching gas to the process target object; and forming a second carbon film so that the second carbon film is embedded in the etching region by supplying a film forming gas including a hydrocarbon-based carbon source gas to the process target object, in a state where the process target object is heated.

Abstract: Provided is a defect detection device capable of measuring the volume of surface defects. The defect detection device includes: an imaging device configured to image an image of an inspection object; a binarization processing unit configured to subject the image to first and second binarization processing by use of different first and second binarization thresholds, so as to calculate first and second sizes for an identical defect in the image; a ratio calculation unit configured to calculate a first ratio of the second size to the first size; and a depth determination unit configured to determine a depth of the defect depending on the first ratio.

Abstract: There is provided a method of forming a nitride film, including: repeating a cycle including an adsorption process of adsorbing a film forming precursor gas onto a substrate having a surface in which a fine recess is formed, the film forming precursor gas containing an element and chlorine constituting a nitride film to be formed; and a nitriding process of nitriding the adsorbed film forming precursor gas with nitriding active species, to form the nitride film in the fine recess. The nitriding process includes: generating NH* active species and N* active species as a nitriding active species; and controlling concentrations of the NH* active species and the N* active species to vary an area where the film forming precursor gas is adsorbed in the fine recess.

Abstract: A database management system (DBMS) generates a query execution plan including information representing one or more database (DB) operations necessary for executing a query, and executes the query in accordance with the query execution plan. In the execution of the query, the DBMS dynamically generates tasks for executing the DB operations and executes the dynamically generated tasks. The query execution plan includes a plurality of query blocks, which are sets of one or more DB operations. When newly generating a task, the DBMS executes determination processing of simultaneous-task-generation number. The determination processing of simultaneous-task-generation number is to calculate, targeting each of the query blocks, the number of simultaneous task generation, which is the number of tasks simultaneously generatable as tasks for executing the query block. The number of the dynamically generated tasks is equal to or smaller than the number of simultaneous task generation.

Abstract: Provided is a thickness variation adjustment-type air ring capable of accurately and optimally controlling the volume of cooling air at all positions in the circumferential direction, and stably manufacturing a synthetic resin film having an exceptionally low thickness variation. A thickness variation adjustment-type air ring is provided on a die of an inflation film manufacturing apparatus which locally controls the volume of cooling air discharged from a cooling air passage in a circumferential direction to adjust the thickness variation of a synthetic resin film when blowing the cooling air around a molten synthetic resin tube extruded in a longitudinal direction to cool and solidify the molten synthetic resin tube to form the synthetic resin film, the thickness variation adjustment-type air ring.

Abstract: According to one embodiment, a memory system is connectable to a host. The memory system includes a first memory, a second memory, and a controller. The first memory stores translation information associating a logical address and a physical address. The second memory stores location information associating the logical address and a location of the translation information. The controller updates the translation information and the location information. After returning from a power supply interruption, the controller starts, at different timing, recovery of first location information and recovery of second location information. The first location information is a part of the location information. The second location information is a part of the location information different from the first location information. The controller executes processing different from recovery of the location information between the recovery of the first location information and the recovery of the second location information.

Abstract: There is provided an over-sheet for a card, the sheet being formed of at least three layers including a skin layer and a core layer and laminated by a coextrusion technique. The skin layer, which is an outermost layer on both sides of the three-layer sheet, is formed of a substantially amorphous aromatic polyester-based resin composition containing 0.01 to 3 parts by mass of at least one lubricant selected from the group of fatty acid ester, fatty acid amide, and fatty acid metal salt. The core layer is formed of a polycarbonate resin.

Abstract: A sprayed coating forming method of forming a sprayed coating includes pre-heating a cylinder block defining a plurality of cylinders, supplying air into an enclosure that houses the cylinder block, inserting a spray gun sequentially into cylinder bores formed in the cylinder block while discharging the air at least from one side of the cylinder block, and spraying droplets of a molten metal onto an inner surface of each of the cylinder bores. The spraying includes spraying one of the cylinder bores first, then next spraying another of the cylinder bores that has at least one cylinder disposed between the another of the cylinder bores and the one of the cylinder bores sprayed first. The air flows around the cylinder block and also flows inside the cylinder bores.

Abstract: There is provided a selective growth method of selectively growing a thin film on exposed surfaces of an underlying insulation film and an underlying metal film, which includes: selectively growing a film whose thickness is decreased by combustion on the underlying metal film using metal of the underlying metal film as a catalyst; and selectively growing a silicon oxide film on the underlying insulation film while combusting the film whose thickness is decreased by combustion.

Abstract: A database management system determines whether an exhibition performance, which is a performance exhibited by execution of a query being in execution, satisfies a predetermined condition continuously on and after a certain time point, based on an execution state of the database management system. When the determination result is affirmative and there is an execution-waiting query, the database management system starts execution of the execution-waiting query before execution of the query being in execution ends.

Abstract: A silicon oxide film forming method includes: forming an amorphous silicon film, including: adsorbing an adsorbate containing silicon to a workpiece by supplying a source gas containing chlorine and silicon into a reaction chamber accommodating the workpiece, activating the source gas, and reacting the activated source gas with the workpiece; and removing chlorine contained in the adsorbate by supplying hydrogen gas into the reaction chamber and activating the hydrogen gas, and reacting the activated hydrogen gas with the adsorbate, wherein removing the chlorine is performed after adsorbing the adsorbate is performed, thereby forming the amorphous silicon film on the workpiece; and forming a silicon oxide film on the workpiece by supplying an oxidizing gas into the reaction chamber and oxidizing the amorphous silicon film, wherein forming the amorphous silicon film and forming the silicon oxide film are repeated in this order plural times.

Abstract: A method of forming an oxide film on an object to be processed, includes: supplying a film-forming raw material gas into a processing chamber; performing at least one of exhausting the processing chamber and supplying a purge gas into the processing chamber to remove gas remaining in the processing chamber; supplying an oxidant gas into the processing chamber; and performing at least one of exhausting the processing chamber and supplying the purge gas into the processing chamber to remove gas remaining in the processing chamber, wherein supplying an oxidant gas includes: supplying a first oxidant gas into the processing chamber at a first concentration; and supplying a second oxidant gas into the processing chamber at a second concentration higher than the first concentration.

Abstract: A method for forming a carbon film on a process surface to be processed of a workpiece includes forming a seed layer on the process surface of the workpiece by supplying an aminosilane-based gas, an aminosilane-based gas having high-order equal to or higher than that of aminodisilane, or a nitrogen-containing heterocyclic compound gas onto the process surface; and forming the carbon film on the process surface on which the seed layer is formed by supplying a hydrocarbon-based carbon source gas and a thermal decomposition temperature lowering gas for lowering a thermal decomposition temperature of the hydrocarbon-based carbon source gas onto the process surface on which the seed layer is obtained, and by setting a film formation temperature to be lower than the thermal decomposition temperature of the hydrocarbon-based carbon source gas.

Abstract: A film forming method for obtaining a thin film by laminating molecular layers of oxide on a surface of a substrate in a vacuum atmosphere includes performing a cycle a plurality of times. The cycle includes: supplying a source gas containing a source to the substrate in a vacuum vessel to adsorb the source onto the substrate; forming an ozone atmosphere containing ozone having a concentration not less than that where a chain decomposition reaction is caused in the vacuum vessel; and forcibly decomposing the ozone by supplying energy to the ozone atmosphere to generate active species of oxygen, and oxidizing the source adsorbed onto the surface of the substrate by the active species to obtain the oxide.

Abstract: A method for forming a silicon oxycarbonitride film includes supplying a gas containing a silicon precursor having an oxygen-containing group onto a process surface of a workpiece, supplying a gas containing a carbon precursor onto the process surface, and supplying a nitriding gas onto the process surface subjected to the supplying a gas containing a silicon precursor and the supplying a gas containing a carbon precursor. The silicon oxycarbonitride film is formed on the process surface by the supplying the gas containing the silicon precursor, the supplying gas containing the carbon precursor and the supplying a nitriding gas without performing an oxidation process.