Abstract: Provided is a plasma processing apparatus, which includes a table unit installed within a processing vessel and configured to receive a substrate thereon, a gas supply unit configured to supply a process gas into the processing vessel, a plasma generating unit configured to turn the process gas to plasma, a magnetic field forming mechanism installed at a lateral side of the table unit and configured to form magnetic fields in a processing atmosphere in order to move electrons existing in the plasma of the process gas along a surface of the substrate; and an exhaust mechanism configured to exhaust gas from the interior of the processing vessel. The magnetic fields are opened at at-least one point in a peripheral edge portion of the substrate such that a loop of magnetic flux lines surrounding the peripheral edge portion of the substrate is not formed.

Abstract: Provided is a vacuum processing apparatus, which includes: a rotatable table installed in a vacuum vessel and configured to horizontally rotate around its center axis; a drive mechanism configured to rotate the rotatable table; a plurality of substrate holding units circumferentially arranged on the rotatable table and configured to obliquely hold a plurality of substrates with a front surface of each of the substrates oriented in a rotation direction of the rotatable table; a heating unit configured to heat the substrates held by the substrate holding units; a processing gas supply unit configured to supply a processing gas onto the substrates held by the substrate holding units; and a vacuum exhaust mechanism configured to vacuum-exhaust the interior of the vacuum vessel.

Abstract: A cleaning method of a silicon oxide film forming apparatus for removing a deposit adhering to the inside of the silicon oxide film forming apparatus after a silicon oxide film is formed on a workpiece by supplying a process gas into a reaction chamber of the silicon oxide film forming apparatus. The cleaning method includes oxidizing the deposit adhering to the inside of the silicon oxide film forming apparatus by supplying an oxidizing gas into the reaction chamber, and cleaning the inside of the silicon oxide film forming apparatus by supplying a cleaning gas into the reaction chamber and removing the oxidized deposit.

Abstract: A silicon oxide film forming method includes: forming an amorphous silicon film, including: adsorbing an adsorbate containing silicon to a workpiece by supplying a source gas containing chlorine and silicon into a reaction chamber accommodating the workpiece, activating the source gas, and reacting the activated source gas with the workpiece; and removing chlorine contained in the adsorbate by supplying hydrogen gas into the reaction chamber and activating the hydrogen gas, and reacting the activated hydrogen gas with the adsorbate, wherein removing the chlorine is performed after adsorbing the adsorbate is performed, thereby forming the amorphous silicon film on the workpiece; and forming a silicon oxide film on the workpiece by supplying an oxidizing gas into the reaction chamber and oxidizing the amorphous silicon film, wherein forming the amorphous silicon film and forming the silicon oxide film are repeated in this order plural times.

Abstract: A cylindrical internal surface processing method comprises forming a cylinder bore, roughening an upper section of the bore, depositing coating onto the bore, and machining a lower section of the bore and the coating. The forming of the cylinder bore includes forming the upper and lower sections with the lower section being axially spaced from the upper section and having an axial length greater than zero. The roughening creates a roughened surface such that a radially innermost edge of the roughened surface has an internal diameter smaller than an internal diameter of the lower section. The coating is deposited to cover the upper section and at least a portion of the lower section. The machining forms a tapered portion and a cylindrical portion, a radially outermost edge of the cylindrical portion having an internal diameter larger than that of a radially outermost edge of the roughened surface.

Abstract: A processing apparatus includes: a first active species generation unit including a first generation chamber where first active species are generated from a first gas by using silent discharge; a second active species generation unit including a second generation chamber where second active species are generated from a second gas by using at least one of inductively coupled plasma, capacitively coupled plasma and microwave plasma, the second active species generation unit being located downstream from the first active species generation unit and the first active species being supplied from the first generation chamber to the second generation chamber; and a processing chamber where a process is performed on an object to be processed by using the first and second active species supplied from the second generation chamber, the processing chamber being located downstream from the second active species generation unit.

Abstract: A database management system (DBMS) manages a database existing in a second storage device with an access speed lower than that of a first storage device. In an execution of a query, the DBMS dynamically generates tasks two or more executable tasks in parallel. The DBMS generates task start information which is information representing a content of the execution of the task, manages the task start information, and executes a content represented by the task start information by the task. The task start information includes a data address set existing in the second storage device. The DBMS controls movement of the data address sets between the first storage device and the second storage device based on a management state of the task start information. In addition, the DBMS selects the task start information based on whether or not the data address set exists in the first storage device.

Abstract: A semiconductor integrated circuit device includes: a rectangular shaped semiconductor substrate; a metal wiring layer formed on or over the semiconductor substrate; and a passivation layer covering the metal wiring layer. A corner non-wiring region where no portion of the metal wiring layer is formed is disposed in a corner of the semiconductor substrate. A slit is formed in a portion of the metal wiring layer which is close to the corner of the semiconductor substrate. The passivation layer includes a first passivation layer which is formed on the metal wiring layer and a second passivation layer which is formed on the first passivation layer. The first passivation layer is formed of a material that is softer than a material of the second passivation layer.

Abstract: Provided is an image processing apparatus including a subtitle information acquiring unit configured to acquire subtitle information to be combined with a main stereoscopic picture, a parallax acquiring unit configured to acquire a parallax causing the subtitle information to be stereoscopically displayed, a stereoscopic subtitle picture generating unit configured to generate a stereoscopic subtitle picture to be stereoscopically displayed at a display position according to the parallax from the subtitle information, and an enlarging/reducing unit configured to enlarge or reduce the stereoscopic subtitle picture in a manner that a size of the stereoscopic subtitle picture increases as the display position approaches a front side.

Abstract: Provided is an image processing apparatus including a subtitle information acquiring unit configured to acquire subtitle information to be combined with a main stereoscopic picture, a parallax acquiring unit configured to acquire a parallax causing the subtitle information to be stereoscopically displayed, a stereoscopic subtitle picture generating unit configured to generate a stereoscopic subtitle picture to be stereoscopically displayed at a display position according to the parallax based on the subtitle information, and an edge processing unit configured to change intensity of an edge in the stereoscopic subtitle picture according to the parallax.

Abstract: Provided is an image processing apparatus including a parallax acquiring unit configured to acquire a parallax of each of a plurality of stereoscopic pictures in a moving picture including the plurality of stereoscopic pictures chronologically as a moving picture parallax, and a parallax generating unit configured to generate a parallax causing a position in front of all of the plurality of stereoscopic pictures corresponding to the moving picture parallax acquired in a certain period of time to be a display position of a user interface picture as a user interface parallax.

Abstract: A method for forming a silicon oxycarbonitride film includes supplying a gas containing a silicon precursor having an oxygen-containing group onto a process surface of a workpiece, supplying a gas containing a carbon precursor onto the process surface, and supplying a nitriding gas onto the process surface subjected to the supplying a gas containing a silicon precursor and the supplying a gas containing a carbon precursor. The silicon oxycarbonitride film is formed on the process surface by the supplying the gas containing the silicon precursor, the supplying gas containing the carbon precursor and the supplying a nitriding gas without performing an oxidation process.

Abstract: A database management system (DBMS) generates a query execution plan including information representing one or more database (DB) operations necessary for executing a query, and executes the query in accordance with the query execution plan. In the execution of the query, the DBMS dynamically generates tasks for executing the DB operations and executes the dynamically generated tasks. The query execution plan includes a plurality of query blocks, which are sets of one or more DB operations. When newly generating a task, the DBMS executes determination processing of simultaneous-task-generation number. The determination processing of simultaneous-task-generation number is to calculate, targeting each of the query blocks, the number of simultaneous task generation, which is the number of tasks simultaneously generatable as tasks for executing the query block. The number of the dynamically generated tasks is equal to or smaller than the number of simultaneous task generation.

Abstract: A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.

Abstract: A database management system (DBMS) generates a query execution plan including information indicating one or more database (DB) operations necessary to execute the query. The DBMS dynamically generates a task for executing the DB operation in execution of the query. The DBMS performs a determination processing of simultaneous-task-generation number when newly creating a task. The determination processing of simultaneous-task-generation number is to calculate the number of simultaneous task generation, which is the number of tasks that can be generated simultaneously, based on the number of tasks which can be newly generated, a first memory resource amount which is the amount of memory resources necessary to be allocated per task newly generated, and a second memory resource amount which is the number of memory resources that can be newly allocated. The number of tasks generated dynamically and simultaneously is equal to or smaller than the calculated number of simultaneously generatable tasks.

Abstract: A database management system (DBMS) generates a query execution plan including information representing one or more database (DB) operations necessary for executing a query and executes the query based on the query execution plan. In the execution of the query, the DBMS dynamically generates a task for executing a DB operation and executes the dynamically generated task. The DBMS executes a task in a plurality of threads executed by a processor core.

Abstract: The present invention is a sealing sheet for a back surface of a solar cell comprising only one polyester film, wherein the polyester film is composed of at least the layer A and the layer B, or the layer A, the layer B and the layer C described below, wherein the polyester film has a given whiteness and a given average reflectance of the polyester film, a given acid value of the polyester, a given thickness of the whole polyester film, a given thickness of the A layer and the B layer, and a given content of the inorganic fine particles in the whole polyester film. Layer A: a polyester resin layer in which the content of the inorganic fine particles is 10 to 35% by mass Layer B: a polyester resin layer in which the content of the inorganic fine particles is 0 to 8% by mass, which is the smallest among the contents of the inorganic fine particles in the layer A, the layer B and the layer C Layer C: a polyester resin layer in which the content of the inorganic fine particles is 0.

Abstract: According to one embodiment, the memory controller outputs a first command, then outputs N pieces of second commands to first and second memory chips, and reads out the read data from the first and second memory chips. First time is for reading out the read data from a memory cell array to a buffer, and second time is for transferring data of the one-Nth of the read data from the buffer to the memory controller. The memory controller outputs the first command, then outputs M pieces of the second commands to the first memory, then outputs a first command to the second memory chip, and then outputs (N?M) pieces of the second commands to the first memory chip. A relationship of (N?M?1)×(second time)<first time<=(N?M)×(second time) is satisfied.

Abstract: Provided is a gaming machine having a cabinet. Between the back as a back face and the right side face of the sides of the cabinet, the gaming machine has a right end side, which is formed by cutting a plane parallel to the gravitational direction in a manner to join lines spaced at predetermined distances in the individual directions of the back and the right side face from a line of intersection, on which the back and the right side face intersect when extended. The gaming machine also has a left end side between the back and a left side face. Moreover, the right end side and the left end side are symmetric with respect to a plane dividing the cabinet equally to the right and left.

Abstract: In a solar cell module and a manufacturing method thereof according to an embodiment of the present invention, a solar cell (55) composed of a transparent electrode film, a photoelectric conversion layer and a back face electrode film is laminated on a light-transmitting insulating substrate (51). On the back face electrode film of the solar cell (55), an insulated lead wire (62, 63) and a back film (65) having an opening (65a) for drawing out an output lead portion (62a, 63a) of the lead wire (62, 63) are sequentially laminated. In such a solar cell module, an insulating sheet (11) is disposed between the back face electrode film of the solar cell (55) and the back film (65) so as to completely cover the opening (65a) of the back film (65). The insulating sheet (11) is disposed so as to cover the entire perimeter of the edge of the opening (65a) of the back film (65).