Abstract: A metal layer is formed directly on a nitride-based compound semiconductor base layer over a substrate body. The metal layer includes at least one metal exhibiting an atomic interaction, with assistance of a heat treatment, to atoms constituting the base layer to promote removal of constitutional atoms from the base layer, whereby pores penetrating the metal layer are formed, while many voids are formed in the nitride-based compound semiconductor base layer. An epitaxial growth of a nitride-based compound semiconductor crystal is made with an initial transient epitaxial growth, which fills the voids, and a subsequent main epitaxial growth over the porous metal layer.

Abstract: A visible image forming method is performed for forming a visible image on an optical disk by an optical disk recording apparatus, which is designed for applying a laser beam onto an optical disk according to first recording data of a predetermined format to form pits having lengths specified by the first recording data. First, a generating step is performed for generating second recording data by embedding image formation data of a visible image in a part of a predetermined format which is the same as predetermined for the first recording data. Second, an extracting step is performed for extracting the image formation data of the visible image from the second recording data of the predetermined format. Then, a forming step is performed for forming pits in the optical disk according to the extracted image formation data so as to form the visible image on the optical disk.

Abstract: In an optical recording apparatus having an optical pickup, a rotating section is provided for rotating an optical disk which is formed thereon with a guide groove to define a spiral track having a plurality of rounds. The optical pickup has a light source for generating an optical beam and a diffractive grating for diffracting the optical beam to form a main beam and a pair of sub beams opposite with each other relative to the main beam. The optical pickup is operable for irradiating the main beam to the spiral track with accompanying the pair of the sub beams along apposite sides of the spiral track. A servo section operates the optical pickup to enable the main beam to trace the spiral track based on a tracking error signal derived from return lights of the sub beams reflected back from the optical disk. A recording section modulates the main beam for recording of information onto the spiral track while the optical dick is rotated.

Abstract: A compound semiconductor substrate is manufactured by forming a higher-quality compound semiconductor layer having a smaller number of crystalline defects on a single-crystal substrate, and removing the single-crystal substrate without causing damage to the compound semiconductor layer. The method comprises the steps of forming the compound semiconductor layer (first, second and third compound semiconductor layers) on the single-crystal substrate (sapphire substrate) through crystal growth so as to partially have a space between the compound semiconductor layer and the single-crystal substrate; and removing the compound semiconductor layer from the sapphire substrate by irradiating the compound semiconductor layer from a side of the sapphire substrate with a laser beam passing through the single-crystal substrate and being absorbed in the compound semiconductor layer to melt an interface between the single-crystal substrate and the compound semiconductor.

Abstract: After a GaN film 12 is formed on a (0001) plane sapphire (Al2O3) substrate 11, islands of the GaN film 12 are formed by wet etching. An upper part of the islands of the GaN film 12 is a single-crystal layer. By performing epitaxial growth over the islands of GaN film 12, a GaN film 15 with little crystal defect is obtained.

Abstract: To provide a semiconductor substrate of a group III nitride with a little warp, this invention provides a process comprising such steps of:

Abstract: An optical disk apparatus records information by irradiating a laser beam from a pickup onto an optical disk. A scanning section scans the laser beam relative to the optical disk. A recording control section controls the scanning section to effect recording of information. A drawing control section is provided for controlling the pickup and the scanning section to effect drawing of a visible image on the optical disk according to image information, such that the laser beam is changed between a first intensity incapable of acting on the optical disk and a second intensity capable of acting on the optical disk. A servo section periodically detects the laser beam reflected back from the optical disk when the laser beam has the first intensity, and servo-controls the irradiating of the laser beam during the drawing of the visible image based on the detection of the laser beam.

Abstract: A television receiver receiving an analog video signal, comprises additional information detecting means for separating and extracting an additional information code from the analog video signal, and outputting the additional information code; additional information recording means for recording the additional information code output from the additional information detecting means; additional information writing switch means for passing or blocking the additional information code that is output from the additional information detecting means toward the additional information recording means, in response to a control signal; conversion means for converting the additional information code output from the additional information detecting means or the additional information code reproduced from the additional information recording means into a character or an image; and signal synthesizing means for synthesizing the analog video signal and the additional information that has been converted into a character or an

Abstract: The Group III-V compound semiconductor manufacturing method which pertains to the present invention is a semiconductor manufacturing method employing epitaxy which comprises (a) a step in which growing areas are produced using a mask patterned on a substrate surface and (b) a step in which a Group III-V compound semiconductor layer is grown in the growing areas while forming facet structures. As epitaxy is continued, adjacent facet structures come into contact so that the surface of the semiconductor layer becomes planarized. Since lattice defects extend towards the facet structures, they do not extend towards the surface of the semiconductor layer. Accordingly, the number of lattice defects in the vicinity of the semiconductor layer surface is reduced.

Abstract: When transmitting encoded video data and audio data, a transmitter 201 also transmits a decoding method 107 generated by decoding-method generation means 203. In the case of a receiver 202, decoding control means 111 controls decoding means 208 in accordance with a received decoding method 113 and thereby, decodes video data and audio data 115. Thus, it is unnecessary for the receiver 202 to previously prepare all of a plurality of decoding methods and the transmitter 201 does not need to encode video data or audio data in accordance with the decoding method owned by the receiver 202.

Abstract: A method is designed for recording contents information along a track of an optical disk of a writeable type. A volume detection step is carried out for detecting an actual volume of the contents information to be recorded into the optical disk. A capacity detection step is carried out for detecting a nominal capacity of the optical disk, which indicates a rated volume of information to be recorded at maximum. A density determination step is carried out for determining a recording density of the contents information based on the detected actual volume and the detected nominal capacity. A record step is carried out for recording the contents information into the optical disk at the determined recording density such that the actual volume of the contents information can fit into the nominal capacity of the optical disk.

Abstract: A metal layer is formed directly on a nitride-based compound semiconductor base layer over a substrate body. The metal layer includes at least one metal exhibiting an atomic interaction, with assistance of a heat treatment, to atoms constituting the base layer to promote removal of constitutional atoms from the base layer, whereby pores penetrating the metal layer are formed, while many voids are formed in the nitride-based compound semiconductor base layer. An epitaxial growth of a nitride-based compound semiconductor crystal is made with an initial transient epitaxial growth, which fills the voids, and a subsequent main epitaxial growth over the porous metal layer.

Abstract: To provide a semiconductor substrate of a group III nitride with low defect density and little warp, this invention provides a process comprising such steps of:

Abstract: A compound semiconductor substrate is manufactured by forming a higher-quality compound semiconductor layer having a smaller number of crystalline defects on a single-crystal substrate, and removing the single-crystal substrate without causing damage to the compound semiconductor layer. The method comprises the steps of forming the compound semiconductor layer (first, second and third compound semiconductor layers) on the single-crystal substrate (sapphire substrate) through crystal growth so as to partially have a space between the compound semiconductor layer and the single-crystal substrate; and removing the compound semiconductor layer from the sapphire substrate by irradiating the compound semiconductor layer from a side of the sapphire substrate with a laser beam passing through the single-crystal substrate and being absorbed in the compound semiconductor layer to melt an interface between the single-crystal substrate and the compound semiconductor.

Abstract: In a broadcasting system including a center and an information broadcast receiving terminal apparatus, contents data of services of each of various data and service additional information in which information relating to these services is described are made in the center. The contents data of services and the service additional information are broadcasted from a service providing apparatus provided in the center. The information broadcast receiving terminal apparatus receives and accumulates the contents data of services and the service additional information therein. When a user of the information broadcast receiving terminal apparatus regenerates the contents data of services and the service additional information to view the program, the information broadcast receiving terminal apparatus provides an additional service on the basis of the service additional information.

Abstract: An optical disk recording apparatus operates on an optical disk having circular tracks which are provisionally written with an index signal used for securing a constant linear velocity of the optical disk from an innermost circular track to an outermost circular track, and records data along the circular tracks at different linear densities on different annular zones of the optical disk. In the apparatus, a disk drive section rotates the optical disk while synchronizing the index signal successively read from the rotated optical disk with a predetermined reference clock signal to thereby maintain the constant linear velocity of the circular tracks. A clock generating section multiples or divides the reference clock signal by different rates to generate different writing clock signals in correspondence to the different annular zones of the optical disk.

Abstract: The Group III-V compound semiconductor manufacturing method which pertains to the present invention is a semiconductor manufacturing method employing epitaxy which comprises (a) a step in which growing areas are produced using a mask patterned on a substrate surface and (b) a step in which a Group III-V compound semiconductor layer is grown in the growing areas while forming facet structures.

Abstract: An improvement in a short-gap ozonizer having a gap of 0.5 mm or shorter between facing flat electrodes. By adjusting the height of a spacer, sandwiched between the flat electrodes, from the flat side of the electrode, the gap is adjusted to adjust the dispersion of the gap between the flat electrodes.

Abstract: When transmitting encoded video data and audio data, a transmitter 201 also transmits a decoding method 107 generated by decoding-method generation means 203. In the case of a receiver 202, decoding control means 111 controls decoding means 208 in accordance with a received decoding method 113 and thereby, decodes video data and audio data 115. Thus, it is unnecessary for the receiver 202 to previously prepare all of a plurality of decoding methods and the transmitter 201 does not need to encode video data or audio data in accordance with the decoding method owned by the receiver 202.

Abstract: A television receiver receiving an analog video signal, comprises additional information detecting means for separating and extracting an additional information code from the analog video signal, and outputting the additional information code; additional information recording means for recording the additional information code output from the additional information detecting means; additional information writing switch means for passing or blocking the additional information code that is output from the additional information detecting means toward the additional information recording means, in response to a control signal; conversion means for converting the additional information code output from the additional information detecting means or the additional information code reproduced from the additional information recording means into a character or an image; and signal synthesizing means for synthesizing the analog video signal and the additional information that has been converted into a character or an